Design of CMOS LNA for Radio Receiver using the Cadence Simulation Tool

Size: px
Start display at page:

Download "Design of CMOS LNA for Radio Receiver using the Cadence Simulation Tool"

Transcription

1 MIT International Journal of Electronics and Communication Engineering, Vol. 3, No. 2, August 2013, pp Design of CMOS LNA for Radio Receiver using the Cadence Simulation Tool Neha Rani M.Tech. (VLSI Design) Scholar Deptt. of Electronics and Communication Engineering Laxmi Devi Institute of Engg. & Technology, Alwar, Rajasthan, INDIA Suraj Sharma Asstt. Prof. E & CE Deptt. Deptt. of Electronics and Communication Laxmi Devi Institute of Engg. & Technology, Alwar, Rajasthan, INDIA suraj_4011@yahoo.co.in ABSTRACT A Low Noise Amplifier is the basic building block or key component in the Communication System. Any Radio Receiver is made from Low Noise Amplifier, mixer and Filter (Power Efficient Active Filter) where LNA plays a challenging role of amplificati on in the Radio Receiver Circuit. In this paper, we design and Simulate Low Noise Amplifier using Cadence Virtuoso (R) Schematic Editor XL tool in 0.18µm UMC Technology for lower power consumption. First we design the Common LNA and Cascode LNA in Cadence tool separately. Then compose of these two and make a new schematic of LNA, The benefit to Design the new LNA to save more gain as compared to individual one. In the communication market the demand of LNA is increasing with increasing the market of Cell Phones, GPS, and Bluetooth etc, which is used in day to day life. So the main aim of our paper is to design an efficient and low cost LNA that is suitable and compatible with all radio receivers. Keywords: Low-noise amplifier (LNA), Radio Receiver, Cascode amplifier, filter, cadence virtuoso (R) schematic editor XL tool. I. INTRODUCTION Now-a-day in the Communication field, Radio Receiver plays an important role in our daily lives. The Role of Radio Receivers is to give the exact usable information to users by the conversion of electromagnetic waves or radio Waves present in the environment. These Radio Receivers contain a most important part of amplification that is called a Low Noise Amplifier. A Low Noise Amplifier is the basic building block or key component in the Communication System. Any Radio Receiver is made from Low Noise Amplifier, mixer and Filter (Power Efficient Active Filter) where LNA plays a challenging role of amplification in the Radio Receiver Circuit. We design a Low Noise Amplifier because of its number of benefits and a wide future in communication field in terms of design, cost, environment using 0.18 µm UMC Technology. UMC is the United Microelectronics Corporation Technology is the Taiwan s first semiconductor company where an important thing is that 0.18 µm uses lower power consumptions as compared to all others. To explore techniques to implement a low noise amplifier is also the consideration of our project. LNA design presents a considerable challenge because of its simultaneous requirement for high gain, low noise amplifier, good input and output matching and unconditional stability at the lowest possible draw from an amplifier. Although gain, noise figure, stability, linearity, input and output matching are equally important; they are independent and do not always work in each other s favor. We can say that a Low Noise Amplifier is a key component in the RF front end receiver. This poses challenges in terms of meeting high gain, low noise figure, good linearity and lower power consumption requirement. To design an LNA there are two widely used types of devices S parameters and normal device to design LNA. S parameters is a built in device which does not require any type of external bias that can be applied, in designing the S-parameters most used. In designing a proper selection of transducer is used should have maximum gain and low noise figure where stability plays an important role at the time of noise itself generated in LNA. We enhance the stability by adding series and source resistance generate thermal noise, so we do not use this technique. An ideal inductor zeroes resistance it generates the thermal noise it reduces the stability by reducing the gain of the amplifier. So the main aim of our project is to design an efficient and low cost LNA that is suitable and compatible with all radio receivers.

2 MIT International Journal of Electronics and Communication Engineering, Vol. 3, No. 2, August 2013, pp II. ARCHITECTURE OF RADIO RECEIVER The receiver demodulates and decodes the channel output to recover the original information to the source. Once demodulated, the channel decoder, which is typically a filter matched to the channel encoder, is used to recover one sample estimate per symbol of the channel code word. The channel encoder estimates the digital source code word, which is then converted to an estimate the original data from the source decoder. The first stage of a receiver is typically a low-noise amplifier (LNA), whose main function is to provide enough gain to overcome the noise of subsequent stages (for example, in the mixer or IF amplifier). Aside from providing enough gain while adding as little noise as possible, an LNA should accommodate large signals without distortion, offer a large dynamic range, and present good matching to its input and output, which is extremely important if a passive band select filter and imagereject filter precedes and succeeds the LNA, since the transfer characteristics of many filters are quite sensitive to the quality of the termination. Figure 1: Simplified block diagram of receiver end of radio A simplified diagram of a Radio Frequency (RF) transceiver is shown below (Fig. 1). The antenna receives the input signal which is then filtered by a bandpass filter to ensure only the desired band is processed. The signal is then fed into the LNA which amplifies it. The image reject filter blocks any signals that may be mixed down and produce any distortion of the desired signal. The mixer down converts the RF signal to the Intermediate Frequency (IF) which then can be processed in the receiver s backend. The mixer uses a local oscillator frequency produced by a voltage controlled oscillator to down convert the RF signal to the IF. With the signal down-converted to the IF the signal can be processed in the baseband. In the transmit side, signals are modulated in the baseband and IF stages and upconverted by the mixer which uses a Voltage-Controlled Oscillator (VCO). The upconverted signal is amplified to transmission by the power amplifier. As a result of improved efficiency the power amplifier is usually non-linear and produces many harmonics. The low-pass filter is used to filter out the harmonics for transmission by the antenna [1]. III. POPULAR LNA TOPOLOGIES IN CMOS TECHNOLOGY The LNA usually only involves one or two transistors to achieve low noise operation. The performance of the LNA circuits is very dependent on process technology. CMOS technologies are the best choice to design an LNA because they offer high speed operation, simplicity in fabrication, and low power consumption. The following discussion presents several popular LNA structures possible in a CMOS integrated circuit. The LNA input is directly connected to a filter for impedance and noise matching. Therefore, different LNA structures have different methods to achieve impedance matching. The structure shown in Figure 2 achieves input impedance matching by directly placing a 50 Ω resistor (Rs) in parallel with the gate of transistor M 1. This is the most straightforward method but the noise figure will be exceptionally high. The lower bound of the LNA noise factor is given by: F 2 + (4γ/αg m R s ) (1) Where α = g m /g do, g do is the drain source conductance, and γ is a constant with a value of Since the term (y/αg m R s ) is larger than 1, the noise figure is readily larger than 6 db. The primary contribution of noise comes from the termination resistor Rs and the drain of the transistor. Due to the noise performance limitations this LNA structure is rarely used. By carefully choosing the size of the transistor and biasing conditions, the 50Ω impedance matching can be easily obtained. Ignoring the gate current noise, a lower bound of noise factor for this topology is represented by F > 1 + (γ/α). This minimum noise factor is about 2.2 db and 4.8 db for a long and short channel device, respectively. The gate current noise will make the noise factor larger, but the drain noise will still be the dominant factor. Figure 2: Resistive terminated LNA The shunt series feedback LNA, shown in Figure 3, uses negative shunt feedback to modify the input impedance of a common source stage. Its input impedance can be approximately calculated by:

3 MIT International Journal of Electronics and Communication Engineering, Vol. 3, No. 2, August 2013, pp Z in = R F / ( l + A ) (2) Where A is the voltage gain which is approximately in the order of R in /R out assuming the g m of M 1 is very large. isolation of the LNA, a C gd. The neutralization technique can be used as shown in Figure 5. An inductor LF is added in parallel with this capacitor to provide a different feedback polarity to cancel the effect of C gd. The inductive feedback may incur some potential stability issues because of the negative feedback. During the design of a C gd neutralization LNA, the instability issue must be avoided. Figure 3: Shunt Series Feedback LNA The noise figure of this structure is better than that of the resistively terminated LNA structure but it is still too high to use in applications such as a UWB receiver. The gate noise is the largest noise contributor in the shunt series feedback LNA structure. This is because the gate noise current experiences high impedance due to the resonance of the input matching network [9]. Therefore, in order to reduce the noise figure, the quality factor of the input matching network should be reduced leading to an impact on the signal quality and filtering. The basic issue with using a CMOS transistor for the LNA is its inherently low transconductance and hence low gain. However, if the current reuse technique is employed, transconductance could be increased as much as twofold. Figure 4 shows a simplified schematic of the current reuse LNA. The key point is that given the same bias current the effective transconductance is g m1 + g m2, while it is simply g m1 in the case of the topologies mentioned previously. A major drawback of this design is its high input and output impedances, thus requiring external impedance matching networks. This prevents the use of this LNA in fully integrated applications. Due to the high gain property, the strong Miller effect reduces the reverse isolation of this LNA. In the actual design, two identical stages are cascaded to improve the reverse isolation. Figure 5: Neutralization LNA Figure 6 shows the structure of the inductive source degeneration LNA which is used for the design of LNA in this thesis. Transistor M 1 is in the common source configuration and M 2 is in the common gate configuration, which has a benefit of higher input impedance. Degeneration inductor Ls provides negative feedback to the amplifier and stabilizes the gain. Figure 6: Inductive Source Degeneration LNA Figure 4: Current Reuse LNA The reverse isolation of the LNA is limited by the drainsource parasitic capacitor C gd. In order to improve the reverse Table 1 compares all the topologies discussed before. As shown in Table 1 it can be proven that inductive source degeneration LNA has a good narrowband match and a very small noise figure. Good input output match and noise figure are essential requirements for any UWB LNA design. Since UWB is such a low power technology, one cannot afford to add too much noise into the system. Research has shown that the source degeneration is the best suitable topology for the UWB related LNA.

4 MIT International Journal of Electronics and Communication Engineering, Vol. 3, No. 2, August 2013, pp Table 1: Comparison between various Topologies Topology Plus Point Minus Point Resistive termination Good input match Large NF Common gate Excellent input match Huge NF and power Series shunt feedback Inductive degeneration Broadband i/o match Good narrowband match, Small NF Stability issues Large area Current reuse High gain low power External matching network required Inductor neutralization Good reverse isolation (S22) IV. CADENCE SIMULATION TOOL Increased area, stability concerns Cadence Design Environment is used to create manufacturing robust designs. This is the advance design and simulation environment that gives designers a new parasitic estimation and comparison flow and optimization algorithms for center designs better for yield improvement and advanced matching and sensitivity analysis. Maximum Efficiency is the benefit to design with and a variety of built in analog tools. Also a quick detection of the circuit problems via a clear visualization cockpit. A Schematic view of the circuit is created using the Cadence Composer Schematic Editor. Alternatively, a text net list input can be employed. The circuit is simulated using the Cadence Affirma analog simulation environment. Different simulators can be employed, once circuit specifications are fulfilled in simulation, the circuit layout is created using the Virtuoso Layout Editor. The resulting layout must verify some geometric rules dependent on the technology (design rules). For enforcing it, a Design Rule Check (DRC) is performed. Optionally, some electrical errors (e.g. Shorts) can also be detected using an Electrical Rule Check (ERC). Then, the layout should be compared to the circuit schematic to ensure that the intended functionality is implemented. This can be done with a Layout Versus Schematic (LVS) check. All these verification tools are included in the Diva software in Cadence (more powerful Cadence tools can also be available, like Dracula, or Assura in deep submicron technologies) [14]. V. LOW NOISE AMPLIFIER SCHEMATIC 1. Common LNA Schematic 2. Cascode LNA Schematic 3. Final Schematic Where as We Combine the Final Schematic by both with Common LNA Schematic and Cascode LNA Schematic. Figure 7: Simulation Window (i) Common LNA schematic A common low noise amplifier is one of three basic single-stage field-effect transistor (FET) amplifier topologies, typically used as a voltage or transconductance amplifier. We can design common LNA using common source, common drain and common gate amplifier. Figure 8: Common LNA Schematic First we design the Common gate amplifier using the cadence tool shows gate as an input signal and drain as an output signal. It is useful in, for example, CMOS RF receivers, especially when operating near the frequency limitations of the FETs; it is desirable because of the ease of impedance matching and potentially has lower noise. (ii) Cascode LNA Schematic The cascade of CS stage and a CG stage is called cascode. This combination may have one or more of the following

5 MIT International Journal of Electronics and Communication Engineering, Vol. 3, No. 2, August 2013, pp characteristics: higher input-output isolation, higher input impedance, high output impedance, higher gain or higher bandwidth. Figure 9: Cascode LNA Schematic VI. SIMULATION RESULTS In LNA design presents a considerable challenge because of its simulations requirement for high gain, low noise figure, good input and output matching and unconditional stability at the lowest possible current draw from the amplifier. The LNA is required to amplify incoming signals and extract them from the noisy environment, thus enabling signal processing by blocks further down the receiver chain. The gain provided by the LNA is generally defined in terms of the voltage gain (A V =V out /V in ) or power gain (S 21 = P out /P in ) [17]. There are several parameters, which are very important in the design and verification of low noise amplifiers and these parameters are simulated and presented below. The chosen scheme of the LNA was simulated using Cadence. AC input signal: The above AC input signal shows the analysis of Power in terms of alternative current. The graph is shown between time in seconds and Voltage in mv. After Observing the Waveform in the Figure we can see that a waveform signal contain in the Graph. (iii) LNA Schematic We used both Cascade LNA and Common LNA in LNA Schematic to achieve high gain as compared to single CMOS Cascade or Common LNA. LNA schematic is designed using Cadence Tool at 0.18 µm technologies µm means lower power consumption of the circuit. The circuit diagram of the Single-Ended LNA is shown in Figure 10. It employs inductive source degeneration (inductor L S connected to the source of transistor M 1 ) [2]. This method has the advantage that one has a greater control over the value of the real part of the input impedance through the choice of inductance. Cascode transistor M 2 is used to reduce the interaction of the tuned output with the tuned input. Figure 11: AC Input Signal Gain at frequency 8.72 GHz Figure 10: LNA Schematic Figure 12: Gain at frequency 8.72 GHz

6 MIT International Journal of Electronics and Communication Engineering, Vol. 3, No. 2, August 2013, pp Noise Figure: The overall noise figure is mainly determined by the first amplification stage, provided that it has sufficient gain. NF is the practical noise figure of a practical RF network and NF min is the ideal or a theoretical noise figure of a circuit, NF = NF min + matched network factor. Figure 13: NF and NF min parameters VII. CONCLUSION LNA has successfully developed with 3.85dB Noise Figure and 15.04dB Gain when the supply voltage is 1.8V only. From the analysis, it consumes four times smaller powers while achieving comparable gain and noise performance to the traditional Low Noise Amplifiers. The LNA is more suitable for RF Radio Receiver circuit whereas it can perform and work with maximum types of Noise Amplifiers. REFERENCES [1] Communications Receivers, Third Edition, Ulrich L. Rohde, Jerry Whitaker, McGraw Hill, New York, 2001, ISBN [2] Superhet Receiver.pdf... Crystal Radio and Superheterodyne Receiver by Ben Godfrey. [3] MOS Inverter, Digital Electronics INEL 4207 by Prof. Manuel Jimenez with contribution by Rafael A. Arce Nazario. [4] Buscar copias de Dr. Jimenez en Reproducciones ($1-$2) Digital circuits using MOS transistors [5] H.C. Lin and L.W. Linholm, An optimized Output Stage for MOS Integrated Circuits, IEEE Journal of Solid-State Circuits, Vol. 10, pp , April [6] R.C. Jaeger, Comments on An optimized output stage for MOS integrated circuits, IEEE Journal of Solid-State Circuits, Vol. 10, pp , June [7] LNA Design Using Spectra RF Application Note Product Version 5.0 December 2003 September by Cadence Design Systems. [8] R. Ramazan, Tutorial simulation of LNA, Linkoeping University, Sweden, [9] The Design of CMOS Radio Frequency Integrated Circuits, Thomas H. Lee. Cambridge University Press, [10] B. Razavi, Design of Analog CMOS Integrated Circuits, McGraw-Hill, [11] T.H. Lee, the Design of Cmos Radio Frequency Integrated Circuits, Cambridge University, [12] Sungkyung Park and Wonchan Kim, Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8, Consumer Electronics, IEEE Transactions on, Vol. 47, No. 0098, [13] D.K. Shaeffer, T. Lee, A 1.5V, 1.5GHz CMOS Low Noise Amplifier, IEEE Journal of Solid-State Circuits, Vol. 32, No. 5, May [14] Worcester Polytechnic Institute. Cadence Design Tools Tutorial. [15] ECE531 Cadence Simulation Tutorial by Haibo Wang Southern Illinois University Carbondale. [16] B. Razavi, CMOS Technology Characterization for Analog and RF Design, IEEE Journal of Solid-State Circuits, Vol. 34, No. 3, March [17] Adel S. Sedra and Kenneth C. Smith, Microelectronic Circuits, 1987, Holt, Rinehart and Winston, Inc. [18] ZHANG H.; CHEN GUI; (2008): Design of a fully differential CMOS LNA for GHz UWB Communication Systems. [19] Pablo M.G.; Mohammad H. (2006): Design of a CMOS Low- Noise Amplifier,Stanford University. [20] J.P. Silver: MOS Differential LNA design Tutorial.

Design of Low Noise Amplifier at 8.72 GHZ

Design of Low Noise Amplifier at 8.72 GHZ MIT International Journal of Electronics and Communication Engineering, Vol. 3, No. 2, August 2013, pp. 69 75 69 Design of Low Noise Amplifier at 8.72 GHZ Dwijendra Parashar M.Tech (Communication Engg.)

More information

CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN

CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 93 CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 4.1 INTRODUCTION Ultra Wide Band (UWB) system is capable of transmitting data over a wide spectrum of frequency bands with low power and high data

More information

Performance Comparison of RF CMOS Low Noise Amplifiers in 0.18-µm technology scale

Performance Comparison of RF CMOS Low Noise Amplifiers in 0.18-µm technology scale Performance Comparison of RF CMOS Low Noise Amplifiers in 0.18-µm technology scale M.Sumathi* 1, S.Malarvizhi 2 *1 Research Scholar, Sathyabama University, Chennai -119,Tamilnadu sumagopi206@gmail.com

More information

Design of a Low Noise Amplifier using 0.18µm CMOS technology

Design of a Low Noise Amplifier using 0.18µm CMOS technology The International Journal Of Engineering And Science (IJES) Volume 4 Issue 6 Pages PP.11-16 June - 2015 ISSN (e): 2319 1813 ISSN (p): 2319 1805 Design of a Low Noise Amplifier using 0.18µm CMOS technology

More information

SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver

SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver Arvin R. Shahani, Derek K. Shaeffer, Thomas H. Lee Stanford University, Stanford, CA At submicron channel lengths, CMOS is

More information

Quadrature GPS Receiver Front-End in 0.13μm CMOS: The QLMV cell

Quadrature GPS Receiver Front-End in 0.13μm CMOS: The QLMV cell 1 Quadrature GPS Receiver Front-End in 0.13μm CMOS: The QLMV cell Yee-Huan Ng, Po-Chia Lai, and Jia Ruan Abstract This paper presents a GPS receiver front end design that is based on the single-stage quadrature

More information

Fully integrated CMOS transmitter design considerations

Fully integrated CMOS transmitter design considerations Semiconductor Technology Fully integrated CMOS transmitter design considerations Traditionally, multiple IC chips are needed to build transmitters (Tx) used in wireless communications. The difficulty with

More information

DESIGN OF LOW POWER CMOS LOW NOISE AMPLIFIER USING CURRENT REUSE METHOD-A REVIEW

DESIGN OF LOW POWER CMOS LOW NOISE AMPLIFIER USING CURRENT REUSE METHOD-A REVIEW DESIGN OF LOW POWER CMOS LOW NOISE AMPLIFIER USING CURRENT REUSE METHOD-A REVIEW Hardik Sathwara 1, Kehul Shah 2 1 PG Scholar, 2 Associate Professor, Department of E&C, SPCE, Visnagar, Gujarat, (India)

More information

A High Gain and Improved Linearity 5.7GHz CMOS LNA with Inductive Source Degeneration Topology

A High Gain and Improved Linearity 5.7GHz CMOS LNA with Inductive Source Degeneration Topology A High Gain and Improved Linearity 5.7GHz CMOS LNA with Inductive Source Degeneration Topology Ch. Anandini 1, Ram Kumar 2, F. A. Talukdar 3 1,2,3 Department of Electronics & Communication Engineering,

More information

Chapter 6. Case Study: 2.4-GHz Direct Conversion Receiver. 6.1 Receiver Front-End Design

Chapter 6. Case Study: 2.4-GHz Direct Conversion Receiver. 6.1 Receiver Front-End Design Chapter 6 Case Study: 2.4-GHz Direct Conversion Receiver The chapter presents a 0.25-µm CMOS receiver front-end designed for 2.4-GHz direct conversion RF transceiver and demonstrates the necessity and

More information

CMOS Design of Wideband Inductor-Less LNA

CMOS Design of Wideband Inductor-Less LNA IOSR Journal of VLSI and Signal Processing (IOSR-JVSP) Volume 8, Issue 3, Ver. I (May.-June. 2018), PP 25-30 e-issn: 2319 4200, p-issn No. : 2319 4197 www.iosrjournals.org CMOS Design of Wideband Inductor-Less

More information

CMOS LNA Design for Ultra Wide Band - Review

CMOS LNA Design for Ultra Wide Band - Review International Journal of Innovation and Scientific Research ISSN 235-804 Vol. No. 2 Nov. 204, pp. 356-362 204 Innovative Space of Scientific Research Journals http://www.ijisr.issr-journals.org/ CMOS LNA

More information

Implementation of Current Reuse Structure in LNAUsing 90nm VLSI Technology for ISM Radio Frequency System

Implementation of Current Reuse Structure in LNAUsing 90nm VLSI Technology for ISM Radio Frequency System Implementation of Current Reuse Structure in LNAUsing 90nm VLSI Technology for ISM Radio Frequency System 1 Poonam Yadav, 2 Rajesh Mehra ME Scholar ECE Deptt. NITTTR, Chandigarh, India Associate Professor

More information

Designing a 960 MHz CMOS LNA and Mixer using ADS. EE 5390 RFIC Design Michelle Montoya Alfredo Perez. April 15, 2004

Designing a 960 MHz CMOS LNA and Mixer using ADS. EE 5390 RFIC Design Michelle Montoya Alfredo Perez. April 15, 2004 Designing a 960 MHz CMOS LNA and Mixer using ADS EE 5390 RFIC Design Michelle Montoya Alfredo Perez April 15, 2004 The University of Texas at El Paso Dr Tim S. Yao ABSTRACT Two circuits satisfying the

More information

Low-Noise Amplifiers

Low-Noise Amplifiers 007/Oct 4, 31 1 General Considerations Noise Figure Low-Noise Amplifiers Table 6.1 Typical LNA characteristics in heterodyne systems. NF IIP 3 db 10 dbm Gain 15 db Input and Output Impedance 50 Ω Input

More information

THE INTERNATIONAL JOURNAL OF SCIENCE & TECHNOLEDGE

THE INTERNATIONAL JOURNAL OF SCIENCE & TECHNOLEDGE THE INTERNATIONAL JOURNAL OF SCIENCE & TECHNOLEDGE Topology Comparison and Design of Low Noise Amplifier for Enhanced Gain Arul Thilagavathi M. PG Student, Department of ECE, Dr. Sivanthi Aditanar College

More information

A low noise amplifier with improved linearity and high gain

A low noise amplifier with improved linearity and high gain International Journal of Electronics and Computer Science Engineering 1188 Available Online at www.ijecse.org ISSN- 2277-1956 A low noise amplifier with improved linearity and high gain Ram Kumar, Jitendra

More information

RF CMOS 0.5 µm Low Noise Amplifier and Mixer Design

RF CMOS 0.5 µm Low Noise Amplifier and Mixer Design RF CMOS 0.5 µm Low Noise Amplifier and Mixer Design By VIKRAM JAYARAM, B.Tech Signal Processing and Communication Group & UMESH UTHAMAN, B.E Nanomil FINAL PROJECT Presented to Dr.Tim S Yao of Department

More information

1-13GHz Wideband LNA utilizing a Transformer as a Compact Inter-stage Network in 65nm CMOS

1-13GHz Wideband LNA utilizing a Transformer as a Compact Inter-stage Network in 65nm CMOS -3GHz Wideband LNA utilizing a Transformer as a Compact Inter-stage Network in 65nm CMOS Hyohyun Nam and Jung-Dong Park a Division of Electronics and Electrical Engineering, Dongguk University, Seoul E-mail

More information

CHAPTER 3 CMOS LOW NOISE AMPLIFIERS

CHAPTER 3 CMOS LOW NOISE AMPLIFIERS 46 CHAPTER 3 CMOS LOW NOISE AMPLIFIERS 3.1 INTRODUCTION The Low Noise Amplifier (LNA) plays an important role in the receiver design. LNA serves as the first block in the RF receiver. It is a critical

More information

DESIGN ANALYSIS AND COMPARATIVE STUDY OF RF RECEIVER FRONT-ENDS IN 0.18-µM CMOS

DESIGN ANALYSIS AND COMPARATIVE STUDY OF RF RECEIVER FRONT-ENDS IN 0.18-µM CMOS International Journal of Electrical and Electronics Engineering Research Vol.1, Issue 1 (2011) 41-56 TJPRC Pvt. Ltd., DESIGN ANALYSIS AND COMPARATIVE STUDY OF RF RECEIVER FRONT-ENDS IN 0.18-µM CMOS M.

More information

Performance Analysis of Narrowband and Wideband LNA s for Bluetooth and IR-UWB

Performance Analysis of Narrowband and Wideband LNA s for Bluetooth and IR-UWB IJSRD International Journal for Scientific Research & Development Vol., Issue 03, 014 ISSN (online): 310613 Performance Analysis of Narrowband and Wideband s for Bluetooth and IRUWB Abhishek Kumar Singh

More information

Noise Analysis for low-voltage low-power CMOS RF low noise amplifier. Mai M. Goda, Mohammed K. Salama, Ahmed M. Soliman

Noise Analysis for low-voltage low-power CMOS RF low noise amplifier. Mai M. Goda, Mohammed K. Salama, Ahmed M. Soliman International Journal of Scientific & Engineering Research, Volume 6, Issue 3, March-205 ISSN 2229-558 536 Noise Analysis for low-voltage low-power CMOS RF low noise amplifier Mai M. Goda, Mohammed K.

More information

Low Power RF Transceivers

Low Power RF Transceivers Low Power RF Transceivers Mr. Zohaib Latif 1, Dr. Amir Masood Khalid 2, Mr. Uzair Saeed 3 1,3 Faculty of Computing and Engineering, Riphah International University Faisalabad, Pakistan 2 Department of

More information

A low-if 2.4 GHz Integrated RF Receiver for Bluetooth Applications Lai Jiang a, Shaohua Liu b, Hang Yu c and Yan Li d

A low-if 2.4 GHz Integrated RF Receiver for Bluetooth Applications Lai Jiang a, Shaohua Liu b, Hang Yu c and Yan Li d Applied Mechanics and Materials Online: 2013-06-27 ISSN: 1662-7482, Vol. 329, pp 416-420 doi:10.4028/www.scientific.net/amm.329.416 2013 Trans Tech Publications, Switzerland A low-if 2.4 GHz Integrated

More information

A 2.4-Ghz Differential Low-noise Amplifiers using 0.18um CMOS Technology

A 2.4-Ghz Differential Low-noise Amplifiers using 0.18um CMOS Technology International Journal of Electronic and Electrical Engineering. ISSN 0974-2174, Volume 7, Number 3 (2014), pp. 207-212 International Research Publication House http://www.irphouse.com A 2.4-Ghz Differential

More information

Performance Evaluation of Different Types of CMOS Operational Transconductance Amplifier

Performance Evaluation of Different Types of CMOS Operational Transconductance Amplifier Performance Evaluation of Different Types of CMOS Operational Transconductance Amplifier Kalpesh B. Pandya 1, Kehul A. shah 2 1 Gujarat Technological University, Department of Electronics & Communication,

More information

DESIGN OF 3 TO 5 GHz CMOS LOW NOISE AMPLIFIER FOR ULTRA-WIDEBAND (UWB) SYSTEM

DESIGN OF 3 TO 5 GHz CMOS LOW NOISE AMPLIFIER FOR ULTRA-WIDEBAND (UWB) SYSTEM Progress In Electromagnetics Research C, Vol. 9, 25 34, 2009 DESIGN OF 3 TO 5 GHz CMOS LOW NOISE AMPLIFIER FOR ULTRA-WIDEBAND (UWB) SYSTEM S.-K. Wong and F. Kung Faculty of Engineering Multimedia University

More information

HIGH-GAIN CMOS LOW NOISE AMPLIFIER FOR ULTRA WIDE-BAND WIRELESS RECEIVER

HIGH-GAIN CMOS LOW NOISE AMPLIFIER FOR ULTRA WIDE-BAND WIRELESS RECEIVER Progress In Electromagnetics Research C, Vol. 7, 183 191, 2009 HIGH-GAIN CMOS LOW NOISE AMPLIFIER FOR ULTRA WIDE-BAND WIRELESS RECEIVER A. Dorafshan and M. Soleimani Electrical Engineering Department Iran

More information

DESIGN OF 2.4 GHZ LOW POWER CMOS TRANSMITTER FRONT END

DESIGN OF 2.4 GHZ LOW POWER CMOS TRANSMITTER FRONT END Volume 117 No. 16 2017, 685-694 ISSN: 1311-8080 (printed version); ISSN: 1314-3395 (on-line version) url: http://www.ijpam.eu ijpam.eu DESIGN OF 2.4 GHZ LOW POWER CMOS TRANSMITTER FRONT END 1 S.Manjula,

More information

DESIGN OF CMOS BASED FM MODULATOR USING 90NM TECHNOLOGY ON CADENCE VIRTUOSO TOOL

DESIGN OF CMOS BASED FM MODULATOR USING 90NM TECHNOLOGY ON CADENCE VIRTUOSO TOOL DESIGN OF CMOS BASED FM MODULATOR USING 90NM TECHNOLOGY ON CADENCE VIRTUOSO TOOL 1 Parmjeet Singh, 2 Rekha Yadav, 1, 2 Electronics and Communication Engineering Department D.C.R.U.S.T. Murthal, 1, 2 Sonepat,

More information

Design of High Gain Two stage Op-Amp using 90nm Technology

Design of High Gain Two stage Op-Amp using 90nm Technology Design of High Gain Two stage Op-Amp using 90nm Technology Shaik Aqeel 1, P. Krishna Deva 2, C. Mahesh Babu 3 and R.Ganesh 4 1 CVR College of Engineering/UG Student, Hyderabad, India 2 CVR College of Engineering/UG

More information

Reconfigurable and Simultaneous Dual Band Galileo/GPS Front-end Receiver in 0.13µm RFCMOS

Reconfigurable and Simultaneous Dual Band Galileo/GPS Front-end Receiver in 0.13µm RFCMOS Reconfigurable and Simultaneous Dual Band Galileo/GPS Front-end Receiver in 0.13µm RFCMOS A. Pizzarulli 1, G. Montagna 2, M. Pini 3, S. Salerno 4, N.Lofu 2 and G. Sensalari 1 (1) Fondazione Torino Wireless,

More information

High Gain Low Noise Amplifier Design Using Active Feedback

High Gain Low Noise Amplifier Design Using Active Feedback Chapter 6 High Gain Low Noise Amplifier Design Using Active Feedback In the previous two chapters, we have used passive feedback such as capacitor and inductor as feedback. This chapter deals with the

More information

DESIGN OF CMOS BASED FM QUADRATURE DEMODULATOR USING 45NM TECHNOLOGY

DESIGN OF CMOS BASED FM QUADRATURE DEMODULATOR USING 45NM TECHNOLOGY DESIGN OF CMOS BASED FM QUADRATURE DEMODULATOR USING 45NM TECHNOLOGY 1 Pardeep Kumar, 2 Rekha Yadav, 1, 2 Electronics and Communication Engineering Department D.C.R.U.S.T. Murthal, 1, 2 Sonepat, 1, 2 Haryana,

More information

A CMOS GHz UWB LNA Employing Modified Derivative Superposition Method

A CMOS GHz UWB LNA Employing Modified Derivative Superposition Method Circuits and Systems, 03, 4, 33-37 http://dx.doi.org/0.436/cs.03.43044 Published Online July 03 (http://www.scirp.org/journal/cs) A 3. - 0.6 GHz UWB LNA Employing Modified Derivative Superposition Method

More information

A 3 5 GHz CMOS High Linearity Ultra Wideband Low Noise Amplifier in 0.18µ CMOS

A 3 5 GHz CMOS High Linearity Ultra Wideband Low Noise Amplifier in 0.18µ CMOS Proceedings of the 5th WSEAS Int. Conf. on CIRCUITS, SYSTEMS, ELECTRONICS, CONTROL & SIGNAL PROCESSING, Dallas, USA, November -, 6 5 A 5 GHz CMOS High Linearity Ultra Wideband Low Noise Amplifier in.8µ

More information

Design of a Low Power 5GHz CMOS Radio Frequency Low Noise Amplifier Rakshith Venkatesh

Design of a Low Power 5GHz CMOS Radio Frequency Low Noise Amplifier Rakshith Venkatesh Design of a Low Power 5GHz CMOS Radio Frequency Low Noise Amplifier Rakshith Venkatesh Abstract A 5GHz low power consumption LNA has been designed here for the receiver front end using 90nm CMOS technology.

More information

Design of Common Source Low Noise Amplifier with Inductive Source Degeneration in Deep Submicron CMOS Processes

Design of Common Source Low Noise Amplifier with Inductive Source Degeneration in Deep Submicron CMOS Processes Design of Common Source Low Noise Amplifier with Inductive Source Degeneration in Deep Submicron CMOS Processes Kusuma M.S. 1, S. Shanthala 2 and Cyril Prasanna Raj P. 3 1 Research Scholar, Department

More information

DESIGN AND PERFORMANCE VERIFICATION OF CURRENT CONVEYOR BASED PIPELINE A/D CONVERTER USING 180 NM TECHNOLOGY

DESIGN AND PERFORMANCE VERIFICATION OF CURRENT CONVEYOR BASED PIPELINE A/D CONVERTER USING 180 NM TECHNOLOGY DESIGN AND PERFORMANCE VERIFICATION OF CURRENT CONVEYOR BASED PIPELINE A/D CONVERTER USING 180 NM TECHNOLOGY Neha Bakawale Departmentof Electronics & Instrumentation Engineering, Shri G. S. Institute of

More information

Design technique of broadband CMOS LNA for DC 11 GHz SDR

Design technique of broadband CMOS LNA for DC 11 GHz SDR Design technique of broadband CMOS LNA for DC 11 GHz SDR Anh Tuan Phan a) and Ronan Farrell Institute of Microelectronics and Wireless Systems, National University of Ireland Maynooth, Maynooth,Co. Kildare,

More information

Highly linear common-gate mixer employing intrinsic second and third order distortion cancellation

Highly linear common-gate mixer employing intrinsic second and third order distortion cancellation Highly linear common-gate mixer employing intrinsic second and third order distortion cancellation Mahdi Parvizi a), and Abdolreza Nabavi b) Microelectronics Laboratory, Tarbiat Modares University, Tehran

More information

Co-design Approach of RMSA with CMOS LNA for Millimeter Wave Applications

Co-design Approach of RMSA with CMOS LNA for Millimeter Wave Applications International Journal of Electronic and Electrical Engineering. ISSN 0974-2174, Volume 7, Number 3 (2014), pp. 307-312 International Research Publication House http://www.irphouse.com Co-design Approach

More information

A 3.5 GHz Low Noise, High Gain Narrow Band Differential Low Noise Amplifier Design for Wi-MAX Applications

A 3.5 GHz Low Noise, High Gain Narrow Band Differential Low Noise Amplifier Design for Wi-MAX Applications International Journal of Electronics Engineering Research. ISSN 0975-6450 Volume 9, Number 4 (2017) pp. 505-516 Research India Publications http://www.ripublication.com A 3.5 GHz Low Noise, High Gain Narrow

More information

Design of a Wideband LNA for Human Body Communication

Design of a Wideband LNA for Human Body Communication Design of a Wideband LNA for Human Body Communication M. D. Pereira and F. Rangel de Sousa Radio Frequency Integrated Circuits Research Group Federal University of Santa Catarina - UFSC Florianopólis-SC,

More information

A 5.2GHz RF Front-End

A 5.2GHz RF Front-End University of Michigan, EECS 522 Final Project, Winter 2011 Natekar, Vasudevan and Viswanath 1 A 5.2GHz RF Front-End Neel Natekar, Vasudha Vasudevan, and Anupam Viswanath, University of Michigan, Ann Arbor.

More information

Dual-band LNA Design for Wireless LAN Applications. 2.4 GHz LNA 5 GHz LNA Min Typ Max Min Typ Max

Dual-band LNA Design for Wireless LAN Applications. 2.4 GHz LNA 5 GHz LNA Min Typ Max Min Typ Max Dual-band LNA Design for Wireless LAN Applications White Paper By: Zulfa Hasan-Abrar, Yut H. Chow Introduction Highly integrated, cost-effective RF circuitry is becoming more and more essential to the

More information

Low Noise Amplifier Design

Low Noise Amplifier Design THE UNIVERSITY OF TEXAS AT DALLAS DEPARTMENT OF ELECTRICAL ENGINEERING EERF 6330 RF Integrated Circuit Design (Spring 2016) Final Project Report on Low Noise Amplifier Design Submitted To: Dr. Kenneth

More information

Low-Power RF Integrated Circuit Design Techniques for Short-Range Wireless Connectivity

Low-Power RF Integrated Circuit Design Techniques for Short-Range Wireless Connectivity Low-Power RF Integrated Circuit Design Techniques for Short-Range Wireless Connectivity Marvin Onabajo Assistant Professor Analog and Mixed-Signal Integrated Circuits (AMSIC) Research Laboratory Dept.

More information

International Journal of Pure and Applied Mathematics

International Journal of Pure and Applied Mathematics Volume 118 No. 0 018, 4187-4194 ISSN: 1314-3395 (on-line version) url: http://www.ijpam.eu ijpam.eu A 5- GHz CMOS Low Noise Amplifier with High gain and Low power using Pre-distortion technique A.Vidhya

More information

Low Noise Amplifier Design Methodology Summary By Ambarish Roy, Skyworks Solutions, Inc.

Low Noise Amplifier Design Methodology Summary By Ambarish Roy, Skyworks Solutions, Inc. February 2014 Low Noise Amplifier Design Methodology Summary By Ambarish Roy, Skyworks Solutions, Inc. Low Noise Amplifiers (LNAs) amplify weak signals received by the antenna in communication systems.

More information

Simulation and Design Analysis of Integrated Receiver System for Millimeter Wave Applications

Simulation and Design Analysis of Integrated Receiver System for Millimeter Wave Applications Simulation and Design Analysis of Integrated Receiver System for Millimeter Wave Applications Rekha 1, Rajesh Kumar 2, Dr. Raj Kumar 3 M.R.K.I.E.T., REWARI ABSTRACT This paper presents the simulation and

More information

Linearization Method Using Variable Capacitance in Inter-Stage Matching Networks for CMOS Power Amplifier

Linearization Method Using Variable Capacitance in Inter-Stage Matching Networks for CMOS Power Amplifier Linearization Method Using Variable Capacitance in Inter-Stage Matching Networks for CMOS Power Amplifier Jaehyuk Yoon* (corresponding author) School of Electronic Engineering, College of Information Technology,

More information

LOW POWER CMOS LNA FOR MULTI-STANDARD WIRELESS APPLICATIONS Vaithianathan.V 1, Dr.Raja.J 2, Kalimuthu.Y 3

LOW POWER CMOS LNA FOR MULTI-STANDARD WIRELESS APPLICATIONS Vaithianathan.V 1, Dr.Raja.J 2, Kalimuthu.Y 3 Research Article LOW POWER CMOS LNA FOR MULTI-STANDARD WIRELESS APPLICATIONS Vaithianathan.V 1, Dr.Raja.J 2, Kalimuthu.Y 3 Address for Correspondence 1,3 Department of ECE, SSN College of Engineering 2

More information

Broadband CMOS LNA Design and Performance Evaluation

Broadband CMOS LNA Design and Performance Evaluation International Journal of Computer Sciences and Engineering Open Access Research Paper Vol.-1(1) E-ISSN: 2347-2693 Broadband CMOS LNA Design and Performance Evaluation Mayank B. Thacker *1, Shrikant S.

More information

Design and Simulation Study of Active Balun Circuits for WiMAX Applications

Design and Simulation Study of Active Balun Circuits for WiMAX Applications Design and Simulation Study of Circuits for WiMAX Applications Frederick Ray I. Gomez 1,2,*, John Richard E. Hizon 2 and Maria Theresa G. De Leon 2 1 New Product Introduction Department, Back-End Manufacturing

More information

2.Circuits Design 2.1 Proposed balun LNA topology

2.Circuits Design 2.1 Proposed balun LNA topology 3rd International Conference on Multimedia Technology(ICMT 013) Design of 500MHz Wideband RF Front-end Zhengqing Liu, Zhiqun Li + Institute of RF- & OE-ICs, Southeast University, Nanjing, 10096; School

More information

A COMPACT WIDEBAND MATCHING 0.18-µM CMOS UWB LOW-NOISE AMPLIFIER USING ACTIVE FEED- BACK TECHNIQUE

A COMPACT WIDEBAND MATCHING 0.18-µM CMOS UWB LOW-NOISE AMPLIFIER USING ACTIVE FEED- BACK TECHNIQUE Progress In Electromagnetics Research C, Vol. 16, 161 169, 2010 A COMPACT WIDEBAND MATCHING 0.18-µM CMOS UWB LOW-NOISE AMPLIFIER USING ACTIVE FEED- BACK TECHNIQUE J.-Y. Li, W.-J. Lin, and M.-P. Houng Department

More information

ALTHOUGH zero-if and low-if architectures have been

ALTHOUGH zero-if and low-if architectures have been IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 40, NO. 6, JUNE 2005 1249 A 110-MHz 84-dB CMOS Programmable Gain Amplifier With Integrated RSSI Function Chun-Pang Wu and Hen-Wai Tsao Abstract This paper describes

More information

A Low Power Single Ended Inductorless Wideband CMOS LNA with G m Enhancement and Noise Cancellation

A Low Power Single Ended Inductorless Wideband CMOS LNA with G m Enhancement and Noise Cancellation 2017 International Conference on Electronic, Control, Automation and Mechanical Engineering (ECAME 2017) ISBN: 978-1-60595-523-0 A Low Power Single Ended Inductorless Wideband CMOS LNA with G m Enhancement

More information

A 3-6 Ghz Current Reuse Noise Cancelling Low Noise Amplifier For WLAN And WPAN Application

A 3-6 Ghz Current Reuse Noise Cancelling Low Noise Amplifier For WLAN And WPAN Application RESEARCH ARTICLE OPEN ACCESS A 3-6 Ghz Current Reuse Noise Cancelling Low Noise Amplifier For WLAN And WPAN Application Shivabhakt Mhalasakant Hanamant [1], Dr.S.D.Shirbahadurakar [2] M.E Student [1],

More information

Low Cost Transmitter For A Repeater

Low Cost Transmitter For A Repeater Low Cost Transmitter For A Repeater 1 Desh Raj Yumnam, 2 R.Bhakkiyalakshmi, 1 PG Student, Dept of Electronics &Communication (VLSI), SRM Chennai, 2 Asst. Prof, SRM Chennai, Abstract - There has been dramatically

More information

A Low Power 900MHz Superheterodyne Compressive Sensing Receiver for Sparse Frequency Signal Detection

A Low Power 900MHz Superheterodyne Compressive Sensing Receiver for Sparse Frequency Signal Detection A Low Power 900MHz Superheterodyne Compressive Sensing Receiver for Sparse Frequency Signal Detection Hamid Nejati and Mahmood Barangi 4/14/2010 Outline Introduction System level block diagram Compressive

More information

Pankaj Naik Electronic and Instrumentation Deptt. SGSITS, Indore, India. Priyanka Sharma Electronic and. SGSITS, Indore, India

Pankaj Naik Electronic and Instrumentation Deptt. SGSITS, Indore, India. Priyanka Sharma Electronic and. SGSITS, Indore, India Designing Of Current Mode Instrumentation Amplifier For Bio-Signal Using 180nm CMOS Technology Sonu Mourya Electronic and Instrumentation Deptt. SGSITS, Indore, India Pankaj Naik Electronic and Instrumentation

More information

Lecture 20: Passive Mixers

Lecture 20: Passive Mixers EECS 142 Lecture 20: Passive Mixers Prof. Ali M. Niknejad University of California, Berkeley Copyright c 2005 by Ali M. Niknejad A. M. Niknejad University of California, Berkeley EECS 142 Lecture 20 p.

More information

Layout Design of LC VCO with Current Mirror Using 0.18 µm Technology

Layout Design of LC VCO with Current Mirror Using 0.18 µm Technology Wireless Engineering and Technology, 2011, 2, 102106 doi:10.4236/wet.2011.22014 Published Online April 2011 (http://www.scirp.org/journal/wet) 99 Layout Design of LC VCO with Current Mirror Using 0.18

More information

Department of Electrical Engineering and Computer Sciences, University of California

Department of Electrical Engineering and Computer Sciences, University of California Chapter 8 NOISE, GAIN AND BANDWIDTH IN ANALOG DESIGN Robert G. Meyer Department of Electrical Engineering and Computer Sciences, University of California Trade-offs between noise, gain and bandwidth are

More information

A Low Noise, Voltage Control Ring Oscillator Based on Pass Transistor Delay Cell

A Low Noise, Voltage Control Ring Oscillator Based on Pass Transistor Delay Cell A Low Noise, Voltage Control Ring Oscillator Based on Pass Transistor Delay Cell Devi Singh Baghel 1, R.C. Gurjar 2 M.Tech Student, Department of Electronics and Instrumentation, Shri G.S. Institute of

More information

Rail to Rail Input Amplifier with constant G M and High Unity Gain Frequency. Arun Ramamurthy, Amit M. Jain, Anuj Gupta

Rail to Rail Input Amplifier with constant G M and High Unity Gain Frequency. Arun Ramamurthy, Amit M. Jain, Anuj Gupta 1 Rail to Rail Input Amplifier with constant G M and High Frequency Arun Ramamurthy, Amit M. Jain, Anuj Gupta Abstract A rail to rail input, 2.5V CMOS input amplifier is designed that amplifies uniformly

More information

A 2.4 GHZ RECEIVER IN SILICON-ON-SAPPHIRE MICHAEL PETERS. B.S., Kansas State University, 2009 A REPORT

A 2.4 GHZ RECEIVER IN SILICON-ON-SAPPHIRE MICHAEL PETERS. B.S., Kansas State University, 2009 A REPORT A 2.4 GHZ RECEIVER IN SILICON-ON-SAPPHIRE by MICHAEL PETERS B.S., Kansas State University, 2009 A REPORT submitted in partial fulfillment of the requirements for the degree MASTER OF SCIENCE Department

More information

High Gain CMOS UWB LNA Employing Thermal Noise Cancellation

High Gain CMOS UWB LNA Employing Thermal Noise Cancellation ICUWB 2009 (September 9-11, 2009) High Gain CMOS UWB LNA Employing Thermal Noise Cancellation Mehdi Forouzanfar and Sasan Naseh Electrical Engineering Group, Engineering Department, Ferdowsi University

More information

Design of a Broadband HEMT Mixer for UWB Applications

Design of a Broadband HEMT Mixer for UWB Applications Indian Journal of Science and Technology, Vol 9(26), DOI: 10.17485/ijst/2016/v9i26/97253, July 2016 ISSN (Print) : 0974-6846 ISSN (Online) : 0974-5645 Design of a Broadband HEMT Mixer for UWB Applications

More information

Design of a Magnetically Tunable Low Noise Amplifier in 0.13 um CMOS Technology

Design of a Magnetically Tunable Low Noise Amplifier in 0.13 um CMOS Technology Graduate Theses and Dissertations Iowa State University Capstones, Theses and Dissertations 2012 Design of a Magnetically Tunable Low Noise Amplifier in 0.13 um CMOS Technology Jeremy Brown Iowa State

More information

Index Terms NSGA-II rule, LNA, noise figure, power gain.

Index Terms NSGA-II rule, LNA, noise figure, power gain. Pages 63-68 Cosmos Impact Factor (Germany): 5.195 Received: 02.02.2018 Published : 28.02.2018 Analog Low Noise Amplifier Circuit Design and Optimization Sathyanarayana, R.Siva Kumar. M, Kalpana.S Dhanalakshmi

More information

Research Article CMOS Ultra-Wideband Low Noise Amplifier Design

Research Article CMOS Ultra-Wideband Low Noise Amplifier Design Microwave Science and Technology Volume 23 Article ID 32846 6 pages http://dx.doi.org/.55/23/32846 Research Article CMOS Ultra-Wideband Low Noise Amplifier Design K. Yousef H. Jia 2 R. Pokharel 3 A. Allam

More information

An 8mA, 3.8dB NF, 40dB Gain CMOS Front-End for GPS Applications

An 8mA, 3.8dB NF, 40dB Gain CMOS Front-End for GPS Applications An 8mA, 3.8dB NF, 40dB Gain CMOS Front-End for GPS Applications F. Svelto S. Deantoni, G. Montagna R. Castello Dipartimento di Ingegneria Studio di Microelettronica Dipartimento di Elettronica Università

More information

ECE 255, MOSFET Amplifiers

ECE 255, MOSFET Amplifiers ECE 255, MOSFET Amplifiers 26 October 2017 In this lecture, the basic configurations of MOSFET amplifiers will be studied similar to that of BJT. Previously, it has been shown that with the transistor

More information

Design and optimization of a 2.4 GHz RF front-end with an on-chip balun

Design and optimization of a 2.4 GHz RF front-end with an on-chip balun Vol. 32, No. 9 Journal of Semiconductors September 2011 Design and optimization of a 2.4 GHz RF front-end with an on-chip balun Xu Hua( 徐化 ) 1;, Wang Lei( 王磊 ) 2, Shi Yin( 石寅 ) 1, and Dai Fa Foster( 代伐

More information

Design of Single to Differential Amplifier using 180 nm CMOS Process

Design of Single to Differential Amplifier using 180 nm CMOS Process Design of Single to Differential Amplifier using 180 nm CMOS Process Bhoomi Patel 1, Amee Mankad 2 P.G. Student, Department of Electronics and Communication Engineering, Shantilal Shah Engineering College,

More information

Evaluating and Optimizing Tradeoffs in CMOS RFIC Upconversion Mixer Design. by Dr. Stephen Long University of California, Santa Barbara

Evaluating and Optimizing Tradeoffs in CMOS RFIC Upconversion Mixer Design. by Dr. Stephen Long University of California, Santa Barbara Evaluating and Optimizing Tradeoffs in CMOS RFIC Upconversion Mixer Design by Dr. Stephen Long University of California, Santa Barbara It is not easy to design an RFIC mixer. Different, sometimes conflicting,

More information

Design of Wideband Low Noise Amplifier using Negative Feedback Topology for Motorola Application

Design of Wideband Low Noise Amplifier using Negative Feedback Topology for Motorola Application Design of Wideband Low Noise Amplifier using Negative Feedback Topology for Motorola Application Design of Wideband Low Noise Amplifier using Negative Feedback Topology for Motorola Application A. Salleh,

More information

Design of Low Noise Amplifier Using Feedback and Balanced Technique for WLAN Application

Design of Low Noise Amplifier Using Feedback and Balanced Technique for WLAN Application Available online at www.sciencedirect.com Procedia Engineering 53 ( 2013 ) 323 331 Malaysian Technical Universities Conference on Engineering & Technology 2012, MUCET 2012 Part 1- Electronic and Electrical

More information

VLSI Chip Design Project TSEK06

VLSI Chip Design Project TSEK06 VLSI Chip Design Project TSEK06 Project Description and Requirement Specification Version 1.1 Project: 100 MHz, 10 dbm direct VCO modulating FM transmitter Project number: 4 Project Group: Name Project

More information

Microelectronic Circuits

Microelectronic Circuits SECOND EDITION ISHBWHBI \ ' -' Microelectronic Circuits Adel S. Sedra University of Toronto Kenneth С Smith University of Toronto HOLT, RINEHART AND WINSTON HOLT, RINEHART AND WINSTON, INC. New York Chicago

More information

A 2.4 GHZ CMOS LNA INPUT MATCHING DESIGN USING RESISTIVE FEEDBACK TOPOLOGY IN 0.13µm TECHNOLOGY

A 2.4 GHZ CMOS LNA INPUT MATCHING DESIGN USING RESISTIVE FEEDBACK TOPOLOGY IN 0.13µm TECHNOLOGY IJET: International Journal of esearch in Engineering and Technology eissn: 39-63 pissn: 3-7308 A.4 GHZ CMOS NA INPUT MATCHING DESIGN USING ESISTIVE FEEDBACK TOPOOGY IN 0.3µm TECHNOOGY M.amanaeddy, N.S

More information

Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology

Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology Renbin Dai, and Rana Arslan Ali Khan Abstract The design of Class A and Class AB 2-stage X band Power Amplifier is described in

More information

A Compact GHz Ultra-Wideband Low-Noise Amplifier in 0.13-m CMOS Po-Yu Chang and Shawn S. H. Hsu, Member, IEEE

A Compact GHz Ultra-Wideband Low-Noise Amplifier in 0.13-m CMOS Po-Yu Chang and Shawn S. H. Hsu, Member, IEEE IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 58, NO. 10, OCTOBER 2010 2575 A Compact 0.1 14-GHz Ultra-Wideband Low-Noise Amplifier in 0.13-m CMOS Po-Yu Chang and Shawn S. H. Hsu, Member,

More information

Design of A Wideband Active Differential Balun by HMIC

Design of A Wideband Active Differential Balun by HMIC Design of A Wideband Active Differential Balun by HMIC Chaoyi Li 1, a and Xiaofei Guo 2, b 1School of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China;

More information

Receiver Architecture

Receiver Architecture Receiver Architecture Receiver basics Channel selection why not at RF? BPF first or LNA first? Direct digitization of RF signal Receiver architectures Sub-sampling receiver noise problem Heterodyne receiver

More information

Design and Simulation of Voltage-Mode and Current-Mode Class-D Power Amplifiers for 2.4 GHz Applications

Design and Simulation of Voltage-Mode and Current-Mode Class-D Power Amplifiers for 2.4 GHz Applications Design and Simulation of Voltage-Mode and Current-Mode Class-D Power Amplifiers for 2.4 GHz Applications Armindo António Barão da Silva Pontes Abstract This paper presents the design and simulations of

More information

LINEARITY IMPROVEMENT OF CASCODE CMOS LNA USING A DIODE CONNECTED NMOS TRANSISTOR WITH A PARALLEL RC CIRCUIT

LINEARITY IMPROVEMENT OF CASCODE CMOS LNA USING A DIODE CONNECTED NMOS TRANSISTOR WITH A PARALLEL RC CIRCUIT Progress In Electromagnetics Research C, Vol. 17, 29 38, 2010 LINEARITY IMPROVEMENT OF CASCODE CMOS LNA USING A DIODE CONNECTED NMOS TRANSISTOR WITH A PARALLEL RC CIRCUIT C.-P. Chang, W.-C. Chien, C.-C.

More information

Document Version Publisher s PDF, also known as Version of Record (includes final page, issue and volume numbers)

Document Version Publisher s PDF, also known as Version of Record (includes final page, issue and volume numbers) A 2V Iductorless Receiver Front-End for Multi-Standard Wireless Applications Vidojkovic, V; Sanduleanu, MAT; van der Tang, JD; Baltus, PGM; van Roermund, AHM Published in: IEEE Radio and Wireless Symposium,

More information

Design and Implementation of less quiescent current, less dropout LDO Regulator in 90nm Technology Madhukumar A S #1, M.

Design and Implementation of less quiescent current, less dropout LDO Regulator in 90nm Technology Madhukumar A S #1, M. Design and Implementation of less quiescent current, less dropout LDO Regulator in 90nm Technology Madhukumar A S #1, M.Nagabhushan #2 #1 M.Tech student, Dept. of ECE. M.S.R.I.T, Bangalore, INDIA #2 Asst.

More information

CHAPTER 1 INTRODUCTION

CHAPTER 1 INTRODUCTION 1 CHAPTER 1 INTRODUCTION 1.1 INTRODUCTION TO RF FRONT END DESIGN Rapid growth of wireless market emerges various wireless communication systems, which demands a low power, low cost and compact transceivers

More information

6.776 High Speed Communication Circuits Lecture 7 High Freqeuncy, Broadband Amplifiers

6.776 High Speed Communication Circuits Lecture 7 High Freqeuncy, Broadband Amplifiers 6.776 High Speed Communication Circuits Lecture 7 High Freqeuncy, Broadband Amplifiers Massachusetts Institute of Technology February 24, 2005 Copyright 2005 by Hae-Seung Lee and Michael H. Perrott High

More information

Design of High Gain and Low Noise CMOS Gilbert Cell Mixer for Receiver Front End Design

Design of High Gain and Low Noise CMOS Gilbert Cell Mixer for Receiver Front End Design 2016 International Conference on Information Technology Design of High Gain and Low Noise CMOS Gilbert Cell Mixer for Receiver Front End Design Shasanka Sekhar Rout Department of Electronics & Telecommunication

More information

Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science

Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science 6.976 High Speed Communication Circuits and Systems Spring 2003 Homework #4: Narrowband LNA s and Mixers

More information

PROJECT ON MIXED SIGNAL VLSI

PROJECT ON MIXED SIGNAL VLSI PROJECT ON MXED SGNAL VLS Submitted by Vipul Patel TOPC: A GLBERT CELL MXER N CMOS AND BJT TECHNOLOGY 1 A Gilbert Cell Mixer in CMOS and BJT technology Vipul Patel Abstract This paper describes a doubly

More information

ANALYSIS AND DESIGN OF HIGH CMRR INSTRUMENTATION AMPLIFIER FOR ECG SIGNAL ACQUISITION SYSTEM USING 180nm CMOS TECHNOLOGY

ANALYSIS AND DESIGN OF HIGH CMRR INSTRUMENTATION AMPLIFIER FOR ECG SIGNAL ACQUISITION SYSTEM USING 180nm CMOS TECHNOLOGY International Journal of Electronics and Communication Engineering (IJECE) ISSN 2278-9901 Vol. 2, Issue 4, Sep 2013, 67-74 IASET ANALYSIS AND DESIGN OF HIGH CMRR INSTRUMENTATION AMPLIFIER FOR ECG SIGNAL

More information

Design of LNA and MIXER for CMOS Receiver Front ends

Design of LNA and MIXER for CMOS Receiver Front ends Design of LNA and MIXER for CMOS Receiver Front ends R.K.Sreelakshmi and D.Sharath Babu Rao 2 PG Scholar, Dept of ECE (VLSI&ES), GPREC (Autonomous), JNTUA, Kurnool, AP, India. 2 Assistant Professor, Dept

More information