Part Number: IB2731MH25

Transcription

1 S-Band Radar Transistor The high power pulsed radar transistor device part number IB2731MH25 is designed for S-Band radar systems operating over the instantaneous bandwidth of GHz. While operating in class C mode this common base device supplies a minimum of 25 watts of peak pulse power under the conditions of 200 s pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state transmitters. TYPICAL DATA TYPICAL DATA TYPICAL DATA TYPICAL DATA Test Sequence Freq PW Duty Vcc P IN IRL P OUT G P OPC OPF I C n C Droop VSWR VSWR Name (GHz) (us) (%) (V) (W) (db) (W) (db) (db) (db) (A) (%) (db) 1.5:1 3:1 OPC Nominal P 1.5:1 Stability/OD S -- OPC Nominal P 1.5:1 Stability/OD S -- OPC Nominal P 1.5:1 Stability/OD S -- Silicon Bipolar Ultra-high f T Class C Operation High Efficiency Common Base Configuration Single Power Supply Gold Metal Maximum Reliability Emitter Ballasting Optimum Thermal Distribution Internal Impedance Matching Ease of Use Ultra-low Loss Design Be0 Package Unmatched Thermal Reliability Solder Seal Hermeticity RF Test Fixture Broadband Matched to 50 Long-term Correlation 100% Device RF Screening No External Tuning Allowed Insertion Phase Marking 5 Increment Marking Patents Issued US B1 US B1 IB2731MH25 PRODUCT SPECIFICATION INTEGRA PAGE 1/9 FAX: EL SEGUNDO, CA

2 MAXIMUM RATINGS BD Collector-Emitter Voltage V CES V V BE =0V. BD Emitter-Base Voltage V EBO V -- BD Storage Temperature Range T STG C -- BD Operating Junction Temperature Range T J C -- Note Screen 'BD' = parameter qualified By Design. THERMAL CHARACTERISTICS BD Thermal Resistance R TH(JC) C/W V CC =V1, PW=PW1, DF=DF1, T F =25 5 C, P OUT =25W. Note Screen 'BD' = parameter qualified By Design. PROCESSING SPECIFICATIONS 100% DC Wafer Probe Per specification. Q1 Wafer DC and RF Qualification Per specification. LM Wire Bond Strength Line monitor per specification. 100% Pre-cap visual inspection Per specification. 100% Gross leak test MIL-STD-750D, Method , Test Condition C. Note Note Screen 'Q1' = parameter is qualified by assembly and test of 3 pieces minimum per wafer. Screen 'LM' = parameter is qualified by assembly line monitor. DC ELECTRICAL CHARACTERISTICS 100% Collector-Emitter Breakdown Voltage BV CES V I C =10mA, V BE =0V, T F =25 5 C. 100% Zero Base Voltage Collector Leakage Current I CES ma V CE =30V, V BE =0V, T F =25 5 C. 100% DC Current Gain H FE V CE =5V, I C =0.1A, T F =25 5 C. IB2731MH25 PRODUCT SPECIFICATION INTEGRA PAGE 2/9 FAX: EL SEGUNDO, CA

3 RF ELECTRICAL CHARACTERISTICS 100% Input Return Loss IRL 8 -- db V CC =V1, PW=PW1, DF=DF1, T F =25 5 C, P IN =P IN1, P IN2, P IN3, F=F1, F2, F3. 100% Output Power 1 P O W V CC =V1, PW=PW1, DF=DF1, T F =25 5 C, P IN =P IN1, F=F1. 100% Output Power 2 P O W V CC =V1, PW=PW1, DF=DF1, T F =25 5 C, P IN =P IN2, F=F2. 100% Output Power 3 P O W V CC =V1, PW=PW1, DF=DF1, T F =25 5 C, P IN =P IN3, F=F3. 100% Collector Efficiency (P O /I C /V CC ) 1 N C % V CC =V1, PW=PW1, DF=DF1, T F =25 5 C, P IN =P IN1, F=F1. 100% Collector Efficiency (P O /I C /V CC ) 2 N C % V CC =V1, PW=PW1, DF=DF1, T F =25 5 C, P IN =P IN2, F=F2. 100% Collector Efficiency (P O /I C /V CC ) 3 N C % V CC =V1, PW=PW1, DF=DF1, T F =25 5 C, P IN =P IN3, F=F3. 100% Pulse Amplitude Droop D db V CC =V1, PW=PW1, DF=DF1, T F =25 5 C, P IN =P IN1, P IN2, P IN3, F=F1, F2, F3. 100% Output Power Flatness =10*LOG(P OMAX /P OMIN ) OPF db Calculate from P O at each frequency F. 100% Output Power Compression =10*LOG(P OC /P O ) OPC db P OC measured with P IN increased by 0.5dB at F=F1, F2, F3. 100% Delta Insertion Phase Variation d-ip Deg V CC =V1, PW=PW1, DF=DF1, T F =25 5 C, P IN =P IN2, F=F2, Mark in 5 increments. V CC =V1, PW=PW1, DF=DF1, T F =25 5 C, P IN =P IN db, F=F1, F2, F3. 100% Stability into 1.5:1 VSWR VSWR-S Rotate 1.5:1 output VSWR through 360 phase. No oscillatory or pulse break-up characteristics allowed on detected output pulse. All non-harmonically related signals must be at least 65 dbc. V CC =V1, PW=PW1, DF=DF1, T F =25 5 C, P IN =P IN1, P IN2, P IN3, F=F1, F2, F3. 100% 3:1 Load Mismatch Tolerance LMT Rotate 3:1 output VSWR through 360 phase. Post test P O = Pre test P O 0.20dB. BD Pulse Rise time RT ns V CC =V1, PW=PW1, DF=DF1, T F =25 5 C, P IN =P IN1, P IN2, P IN3, F=F1, F2, F3. Measure between 10% and 90% detected power points. Note V1 = 36V; PW1 = 200 s; DF1 = 10%; P IN1 = P IN2 = P IN3 = 2.8W; F1 = 2.7 GHz, F2 = 2.9 GHz, F3 = 3.1 GHz. Note T F = Device flange temperature. Note Parts are binned and marked in 5 degree increments for Insertion Phase IP : ITI -1, -2, -3, -4, -5, -6, -7, -8, -9, -10, -11, -12. Note Screen 'BD' = parameter qualified By Design. BROADBAND RF TEST FIXTURE IMPEDANCE CHARACTERISTICS Frequency (GHz) Z IF ( ) Z OF ( ) j j j j j j MATCHING CIRCUITRY Z IF Z OF MATCHING CIRCUITRY 50 Impedance Definition DUT DUT IB2731MH25 PRODUCT SPECIFICATION INTEGRA PAGE 3/9 FAX: EL SEGUNDO, CA

4 PACKAGE DIMENSIONAL OUTLINE DRAWING L I C F K E A INCHES MILLIMETERS DIM A B MIN MAX MIN MAX C D E F G H I J K L M H M PIN 1 BASE 2 COLLECTOR 3 EMITTER J D G B IB2731MH25 PRODUCT SPECIFICATION INTEGRA PAGE 4/9 FAX: EL SEGUNDO, CA

5 BROADBAND RF TEST FIXTURE ASSEMBLY AND PARTS LIST IB2731MH25 PRODUCT SPECIFICATION INTEGRA PAGE 5/9 FAX: EL SEGUNDO, CA

6 BROADBAND RF TEST FIXTURE CIRCUIT DIMENSIONS IN MILS IB2731MH25 PRODUCT SPECIFICATION INTEGRA PAGE 6/9 FAX: EL SEGUNDO, CA

7 BROADBAND RF TEST FIXTURE ELECTRICAL SCHEMATIC IB2731MH25 PRODUCT SPECIFICATION INTEGRA PAGE 7/9 FAX: EL SEGUNDO, CA

8 Pout vs Pin Gain vs Pin Pout (W) GHz 2.9GHz 3.1GHz Gain (db) GHz 2.9GHz 3.1GHz Pin (W) Pin (W) Typical values, Vcb = 36 V, 200 s RF pulse, 10% duty cycle Efficiency vs Pin Typical values, Vcb = 36 V, 200 s RF pulse, 10% duty cycle Return Loss vs Freq Efficiency (%) GHz 2.9GHz 3.1GHz Return Loss (db) Pin (W) Freq (GHz) Typical values, Vcb = 36 V, 200 s RF pulse, 10% duty cycle Typical values, Vcb = 36 V, 200 s RF pulse, 10% duty cycle, Pin = 3.3W IB2731MH25 PRODUCT SPECIFICATION INTEGRA PAGE 8/9 FAX: EL SEGUNDO, CA

9 DEFINITIONS Data Sheet Status Proposed Specification Preliminary Specification Product Specification This data sheet contains proposed specifications. This data sheet contains specifications based on preliminary measurements and data. This data sheet contains final product specifications. Maximum Ratings Stress above one or more of the maximum ratings may cause permanent damage to the device. These are maximum ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. Exposure to maximum values for extended periods of time may affect device reliability. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO base is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with general or domestic waste. DISCLAIMER Technologies Inc. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Technologies Inc. assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Technologies Inc. products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Technologies Inc. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Technologies Inc. for any damages resulting from such improper use or sale. IB2731MH25 PRODUCT SPECIFICATION INTEGRA PAGE 9/9 FAX: EL SEGUNDO, CA