XZ1002-BD GHz GaAs MMIC Core Chip

Transcription

1 XZ2BD.5. GHz GaAs MMIC Rev Sep Features Highly Integrated Transmit and Receive Modes of Operation Integrated T/R Switches, LNA and Driver Amplifier, 6Bit Phase Shifter and 5Bit Attenuator 2. Small Signal RX Gain m TX P Compression Point Compensated OnChip Gate Bias Circuit Parallel Data Input % OnWafer RF, DC and Output Power Testing % Visual Inspection to MILSTD3 Method 2 General Description The XZ2BD is a highly integrated dual path transmit/receive 3 port core chip. It is designed for applications operating within the.5 to. GHz range. The core consists of integrated transmit/receive switches, LNA, 6bit phase shifter, 5bit attenuator and driver amplifier. The digital control logic allows for parallel data input so that the phase shifter and attenuator may be changed instantaneously. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for phased array radar applications. Electrical Characteristics (Ambient Temperature T=25 o C) Parameter Frequency Range (f) Input Return Loss RX/TX Mode (S) Output Return Loss RX/TX Mode (S22) Receive Small Signal Gain (S2) Transmit Small Signal Gain (S2) Receive Output Power for Compression Point (P) Transmit Output Power for Compression Point (P) Receive Noise Figure (NF) Receive Output Third Order Intercept (OIP3) Phase Shifter Range (6 Bit, 64 states, deg step) RMS Phase Error Attenuator Range (5 Bit, 32 states,.9 step) RMS Attenuator Amplitude Error Drain Bias Voltage (Vd,2,3,4) Gate Bias Voltage (Vs,2,3) Control Voltage High (Va,,2,3,4) & (Vp,,2,3,4,5) Control Voltage Low (Va,,2,3,4) & (Vp,,2,3,4,5) Supply Current (Id) (Vd=4V, TX mode) Supply Current (Ia) (Vs=5V) Supply Current (Il) (Vl=3.3V) Units GHz m m m deg deg VDC VDC VDC VDC ma ma ma Chip Device Layout Absolute Maximum Ratings Supply Voltage (Vd) 6V Gate Supply (Vs) 6V to 4V Logic Supply (Vl) to 5.5V Supply Current (Id) 35 ma Input Power TBD Input Power RX +2 m Input Power RFCOM +5 m Storage Temperature (Tstg) 65 to +65 ºC Operating Temperature (Ta) 55 to MTTF Graph Channel Temperature MTTF Graph () Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Min Typ XZ2BD Max Page of Hsinchu 35 Taiwan, R.O.C Tel / Fax M/ACOM Tech Asia

2 XZ2BD.5. GHz GaAs MMIC Rev Sep Measurements (Multiple Devices) RX reference state S2 in Receive Mode RX mode reference state measured at TA S2 [] S2 in Transmit Mode TX mode reference state measured at TA Frequency (GHz) Frequency (GHz) S in Receive Mode RX mode reference state measured at TA S in Transmit Mode TX mode reference state measured at TA 5 5 S [] 5 S [] S22 in Receive Mode RX mode reference state measured at TA S22 in Transmit Mode TX mode reference state measured at TA 5 5 S22 [] 5 S22 [] Page 2 of Hsinchu 35 Taiwan, R.O.C Tel / Fax M/ACOM Tech Asia

3 XZ2BD.5. GHz GaAs MMIC Rev Sep Measurements (cont.) 3. Attenuator Performance in Receive Mode. Attenuator Performance in Receive Mode Attenuation range [] RMS amplitude error [] RMS Phase error [DEG] Attenuator Performance in Receive Mode Maximum phase range [DEG] Phase Shifter Performance in Receive Mode Phase Shifter Performance in Receive Mode 5 Phase Shifter Performance in Receive Mode RMS amplitude error [] RMS phase error [DEG] Page 3 of Hsinchu 35 Taiwan, R.O.C Tel / Fax M/ACOM Tech Asia

4 XZ2BD.5. GHz GaAs MMIC Rev Sep Measurements (cont.) Attenuator Performance over 32 States in Receive Mode Attenuation [] Attenuation at maximum state [] Phase Shifter Performance over 64 States in Receive Mode Phase shift [deg] Phase shift at maximum state [] NF [] NF versus Temperature in Receive Mode Ta=_C Ta=6_C Pout@Pin=5 m (m) Large Signal Performance Sample measured at T A =35 C Frequency (GHz) Page 4 of Hsinchu 35 Taiwan, R.O.C Tel / Fax M/ACOM Tech Asia

5 XZ2BD.5. GHz GaAs MMIC Rev Sep Measurements (cont.) Transmit POUT [m] Large Signal Performance Sample measured at Ta=35 C Pin (m).5 GHz.5 GHz 9 GHz 9.25 GHz 9.5 GHz 9.5 GHz GHz.25 GHz.5 GHz.5 GHz GHz Receive POUT [m] Large Signal Performance Sample measured at Ta=35 C Pin (m).5 GHz.5 GHz 9 GHz 9.25 GHz 9.5 GHz 9.5 GHz GHz.25 GHz.5 GHz.5 GHz GHz 5 IIP3 versus Temperature in Receive Mode 35 OIP3 versus Temperature in Receive Mode IIP3 [m] Ta=_C Ta=6_C OIP3 [m] Ta=_C Ta=6_C Gain Phase Plots 36 Measured in RXmode at f= GHz and Ta=35 C Measured in TXmode at f= GHz and Ta=35 C Phase shift [ ] Phase shift [ ] Attenuation [] Attenuation [] Page 5 of Hsinchu 35 Taiwan, R.O.C Tel / Fax M/ACOM Tech Asia

6 XZ2BD.5. GHz GaAs MMIC Rev Sep Measurements (cont.) 25 4V Supply Current in Receive Mode over Temperature 3 4V Supply Current in Transmit Mode over Temperature 24 I+4V_ [ma] Ta=_C Ta=6_C I+4V_3 [ma] 29 2 Ta=_C Ta=6_C Pdc_MFC_ [mw] DC Power Dissipation in Receive Mode over Temperature Ta=_C Ta=6_C Pdc_MFC_3 [mw] DC Power Dissipation in Transmit Mode over Temperature Ta=_C Ta=6_C Page 6 of Hsinchu 35 Taiwan, R.O.C Tel / Fax M/ACOM Tech Asia

7 Contol Logic XZ2BD.5. GHz GaAs MMIC Rev Sep Block Diagram TX Switch Gate Bias TXOUT Gate Bias MPA AMP2.9 V Common Switch ATT TX/RX AMP. V /+3.3 V Digital Input LNA RXIN RX Switch. V Gate Bias Page of Hsinchu 35 Taiwan, R.O.C Tel / Fax M/ACOM Tech Asia

8 XZ2BD.5. GHz GaAs MMIC Rev Sep Mechanical Drawing.69 (.66).29 (.2).99 (.) 2.29 (.4) 3.3 (.9) (.44) 5. (.9) (.2) XZ2BD (.59) 2.5 (.9) (.46) 3.55 (.4) 3.4 (.34) 3.25 (.2) 3. (.22) 2.95 (.6) 2. (.) 2.65 (.4) 2.5 (.9) 2.35 (.93) 2.2 (.) 2.5 (.).9 (.5).5 (.69).6 (.63).45 (.5).3 (.5) 2.6 (.4) 2.5 (.2). (.) (.) 2.46 (.2) 3.46 (.24) (.3) (.44) 4. (.5) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness:. +/. (.43 +/.4), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are. x. (.4 x.4). Bond pad centers are approximately.9 (.4) from the edge of the chip. Dicing tolerance: +/.5 (+/.2). Approximate weight: 2.4 mg. Page of Hsinchu 35 Taiwan, R.O.C Tel / Fax M/ACOM Tech Asia

9 XZ2BD.5. GHz GaAs MMIC Rev Sep Bond Pad Designations Pad # Pad ID Voltage [VDC] Description TX/RX RF TX input / RX output 2 Vd2 +4. Interstage Amp Supply 3 Vs 5. Gate Bias 4 GND Decoupling Ground 5 RX Qnot 3.4 RF Switch Monitor (RX Mode) 6 Vd3 / +4. Output PA Supply GND Decoupling Ground TXOUT RF Transmit [TX] Output 9 GND Decoupling Ground A / Atten Bit A3 / Atten Bit 2 A4 / Atten Bit 3 A2 / Atten Bit 4 A / Atten Bit 5 RX / +3.3 TX/RX Switch 6 GND Digital Ground Cross Talk Suppression Pad # Pad ID Voltage [VDC] Description P5 / +3.3 Phase Bit P2 / Phase Bit 9 P4 / Phase Bit 2 P3 / Phase Bit 2 P / Phase Bit 22 P / Phase Bit 23 Qnot P P Voltage Monitor (Ref State) 24 Q P 3.4 P Voltage Monitor (Ref State) 25 Vs2 5. Gate Bias 26 V OnChip PullUp 2 GND Decoupling Ground 2 RXIN RF Receive [RX] Input 29 Vs3 5. Gate Bias 3 Vd4 +4. Gate Bias (Positive) 3 GND Decoupling Ground 32 Vd / +4. LNA Supply App Note [] Wire Bonding Bond wires need to be as short as possible. The device is designed for a total bond wire inductance of 3 ph/rf bond pad. Different bond wire inductance will result in degraded performance. Page 9 of Hsinchu 35 Taiwan, R.O.C Tel / Fax M/ACOM Tech Asia

10 XZ2BD.5. GHz GaAs MMIC Rev Sep App Note [2] Biasing The core chip can be operated in either Transmit [TX] or Receive [RX] mode. The bias setup is slightly different for each. TX Mode The TX mode is activated by setting the TX/RX switch, bond pad 4 (RX), to logic high (+3.3V) Vrx=3.3V. In this mode, bond pad 5 (Vd3) for biasing the output power amplifier (MPA) must be set to Vd3=4V. Additionally, the LNA is not operational in this [TX] mode so Vd=V. RX Mode To select the RX mode of operation the TX/RX switch, again bond pad 4 (RX), is set to logic low (V) Vrx=V. In this mode bond pad 32 (Vd) for biasing the Low Noise Amplifier stage (LNA) must be set to Vd=4V. In the RX mode the MPA is not used and must be set to Vd3=V. TX/RX Modes Both the gate bias circuitry (Vs,2,3) and the interstage amplifiers (Vd2,4) must be biased at Vs(,2,3)=5V and Vd(2,4)=4V respectively in both TX and RX operation. CAUTION! Also, make sure to properly sequence the applied voltages to ensure negative gate bias (Vs,2,3) is available before applying the positive drain supply (Vd,2,3,4). App Note [3] Attenuator / Phase Shifter Control Bias Logic buffering is integrated in the device to supply the necessary internal switching voltages. The reference state is enabled with logic "low" on all inputs, and the binary weighted phase(amplitude) states are switched by a logic "high" on the respective control input. Amplitude(phase) variation between phase(amplitude) states is minimized by optimization of internal matching and isolation between bits. Each bit is controlled using a for the reference state and a for the enabled state. Atten Level () Va Va Va2 Va3 Va4 Phase Shift (degrees) º 5.625º.25º 22.5º 45º 9º º º Vp Vp Vp2 Vp3 Vp4 Vp5 App Note [4] Bias Arrangement Each DC Bias pad (Vd,2,3) needs to have DC bypass capacitance (~2 pf) as close to the device as possible. MTTF Graphs These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. 2E E TX mode 2E E RX mode MTTF [Hours] E E9 m MTTF [Hours] E E9 m2 E E Temperature [C] Temperature [C] m temp= 6. MTTF_MFC_TX=.46E Pavs=3., RFfreq=2. m2 temp= 6. MTTF_MFC_RX=.52E Pavs=3., RFfreq=2. Page of Hsinchu 35 Taiwan, R.O.C Tel / Fax M/ACOM Tech Asia

11 XZ2BD.5. GHz GaAs MMIC Rev Sep Handling and Assembly Information CAUTION! M/ACOM Tech Asia MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy M/ACOM Tech Asia's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of M/ACOM Tech Asia. As used herein: () Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment GaAs Products from M/ACOM Tech Asia are. mm (.4") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM63HK or DM63HKPt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the M/ACOM Tech Asia "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless goldtin (AuSn) preform, approximately. 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The goldtin eutectic (% Au 2% Sn) has a melting point of approximately 2º C (Note: Gold Germanium should be avoided). The work station temperature should be 3ºC +/ º C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die preheated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses.6 mm x.3 mm (.3" x.5") 99.99% pure gold ribbon with.52% elongation to minimize RF port bond inductance. Gold.25 mm (.") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermocompression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Ordering Information Part Number for Ordering XZ2BDV XZ2BDEV Description RoHS compliant die packed in vacuum release gel paks XZ2BD Evaluation Module Caution: ESD Sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Proper ESD procedures should be followed when handling this device. Page of Hsinchu 35 Taiwan, R.O.C Tel / Fax M/ACOM Tech Asia