Multi-beam mask writer MBM-1000 for advanced mask making

Transcription

1 Multi-beam mask writer MBM-1000 for advanced mask making H. Matsumoto NuFlare Technology, Inc. Slide 1

2 Multi-beam Shaping aperture array (SAA) Blanking aperture array (BAA) Sub deflectors Main deflectors Electron gun Condenser lens Projection lens Objective lens VSB 1 st shaping aperture Shaping deflectors 2 nd shaping aperture Sub deflectors Main deflectors Electron gun Condenser lenses Projector lenses Objective lens stripe width =beam array size MBM-1000 stripe width =deflection field size EBM-9500 Reticle current density (A/cm 2 ) max. total current (na) CD (nm[3s]) registration (nm[3s]) Shot count (G/pass) 0.9 # (pattern independent) (pattern dependent) # number of exposure by beams for 150mm area Slide 2

3 Correction functions (EBM series) offline correction (VSB12i EL) EBM PEC LEC/FEC dose No secondary dose interaction range [um] with PEC 50% dose level adjusted by PEC D th and FEC FEC primary dose proximity dose fogging dose primary dose proximity effect fogging effect D x / 2 D x g x x dx D x g x x dx D P F th NFT uses consistent theory for PEC/FEC/LEC. Offline correction can be handled by VSB12i EL function. with PEC and FEC Slide 3

4 PLDC MBM-1000 has pixel level dose correction (PLDC) Middle-range effect correction for EUV-PEC Short-range effect correction for linearity correction, fidelity improvement and better dose margin Corrections run inline. No need for pre-writing calculation. Slide 4

5 Correction functions (EBM/MBM) offline correction (VSB12i EL) EUV-PEC beam-by-beam correction PLDC PEC consistently fidelity EUV-PEC integrated LEC/FEC EBM MBM interaction range [um] MBM does middle-range and short-range correction inline and real-time by using PLDC. Corrections by PLDC is consistent with PEC/LEC/FEC Slide 5

6 Data path in MBM-1000 PEC/FEC/LEC/GMC are applied. PLDC integrated with rasterizer linearity correction dose margin enhancement EUV-PEC tool-specific correction vector level processing rasterize pixel level dose modulation beam-by-beam correction shot data generation shot time data Blanking aperture array (BAA) Sub deflectors Main deflectors deflection data Slide 6

7 Resolution enhancement by PLDC Zable et al. Proc. of SPIE Vol D-1 (2017) PLDC improves dose profile by pixel-based dose correction. Dose contrast at pattern edge is enhanced to widen process margin. Dose profile can be adjusted to correct patterning linearity. Slide 7

8 dose [a.u.] dose [a.u.] Linearity nm beam, 5-nm grid, 20-nm Gaussian 40 nm isolated line 40-nm hp dense line 3 shot dose just dose, but shot + PE dose deposited dose deposited dose 2 poor contrast 1 under dose position [nm] position [nm] Dose blurring limits patterning resolution at fine pitch. Slide 8

9 dose margin [nm/%dose] dose margin [nm/%dose] PLDC enhances dose margin 5% dense Line/Space 50% dense Line/Space poor resolution w/o dose bias Low density features print well pattern size hp [nm] w/o PLDC w/ PLDC (100%) 0.4 w/ PLDC (140%) 0.2 w/ PLDC (200%) PLDC improves patterning resolution. 0 hp 20nm not resolved at 50% LPD Edge-enhanced PLDC effectively improves dose margin pattern size hp [nm] Larger dose modulation leads to more improvement, but requires longer write time. 10-nm beam, 5-nm grid, 20-nm Gaussian w/o PLDC PLDC is effective with 140% modulation which can be good option to balance improvement and TPT. w/ PLDC (100%) w/ PLDC (140%) w/ PLDC (200%) Slide 9

10 EPE [nm] PLDC corrects for linearity EPE [nm] % dense Line/Space 50% dense Line/Space PLDC corrects to 20-nm hp cliff ~25nm w/o PLDC pattern size hp [nm] w/o PLDC w/ PLDC (100%) w/ PLDC (140%) EPE error at hp 20nm is insignificant as pattern will not be resolved. w/ PLDC (200%) pattern size hp [nm] 10-nm beam, 5-nm grid, 20-nm Gaussian PLDC corrects to 30-nm hp; 20-nm hp has very poor dose margin w/o PLDC w/ PLDC (100%) w/ PLDC (140%) w/ PLDC (200%) EPE linearity is corrected. PLDC corrects for linearity, with increasing dose margin. Correction accuracy is ok even with 100% dose modulation. Slide 10

11 PLDC for curvilinear pattern [test pattern from D2S.inc.] Simulation without PLDC Simulation with PLDC for edge enhancement H. Zable et al., " GPU-accelerated inline linearity correction: pixel-level dose correction (PLDC) for the MBM-1000", Proc. SPIE 10454, D-1, (2017). PLDC enables ILT patterning without turnaround time penalty Slide 11

12 PLDC for curvilinear pattern 4X size of 80 nm contact PLDC on PLDC off PLDC on comparison low sensitivity resist (~140 uc/cm2) Pattern fidelity is improved by PLDC PLDC off Slide 12

13 Conclusion PLDC corrects linearity with increasing dose margin. Effective with 140% dose modulation Corrects to 20-nm hp (5% density) and 30-nm hp (50% density) with 20 nm total blur. PLDC provides EUV-PEC, which is middle-range PEC for EUV substrate. PLDC is integrated consistently with correction function of PEC/FEC/LEC Slide 13

14 Thank you for your kind attention Slide 14