CMD157P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.
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1 Features Functional Block Diagram Ultra low noise figure High gain broadband performance Single supply voltage: ma Pb-free RoHs compliant 3x3 QFN package Description The CMD7P3 is a broadband MMIC low noise amplifier housed in a leadless 3x3 mm plastic surface mount package. The CMD7P3 is ideally suited for EW and communications systems where small size and low power consumption are needed. The broadband device delivers greater than 25 db of gain with a corresponding output 1 db compression point of +1 dbm and a noise figure of 1.5 db. The CMD7P3 is a 5 ohm matched design eliminating the need for external DC blocks and RF port matching. The CMD7P3 amplifier is the perfect alternative to costly hybrid amplifiers. Electrical Performance - V dd = 3. V, T A = 25 o C Parameter Min Typ Max Units Frequency Range 6-18 GHz Gain 26 db Noise Figure 1.5 db Input Return Loss 1 db Output Return Loss 14 db Output P1dB 11 dbm Supply Current 52 ma
2 Specifications Absolute Maximum Ratings Parameter Rating Drain Voltage, Vdd 5. V RF Input Power +2 dbm Channel Temperature, Tch C Power Dissipation, Pdiss 54 mw Thermal Resistance 12 C/W Operating Temperature -4 to 85 C Storage Temperature -55 to C ESD Sensitivity (HBM) Class 1A Recommended Operating Conditions Parameter Min Typ Max Units Vdd V Idd 52 ma Electrical performance is measured at specific test conditions. Electrical specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the maximum ratings may cause permanent damage. Electrical Specifications - V dd = 3. V, T A = 25 o C Parameter Min Typ Max Min Typ Max Units Frequency Range GHz Gain db Noise Figure db Input Return Loss 1 db Output Return Loss db Output P1dB dbm Output IP dbm Supply Current ma Gain Temperature Coefficient Noise Figure Temperature Coefficient db/ C.8.8 db/ C
3 Typical Performance Broadband Performance, V dd = 3. V, I dd = 52 ma, T A = 25 o C S11 S21 S22 NF Response/dB Noise Figure/dB Narrow-band Performance, V dd = 3. V, I dd = 52 ma, T A = 25 o C Response/dB 1 5 S11 S21 S22 NF Noise Figure/dB
4 Typical Performance Gain vs. Temperature, V dd = 3. V Gain/dB C +85C -4C 1 Noise Figure vs. Temperature, V dd = 3. V C +85C -4C 2.25 Noise Figure/dB
5 Typical Performance Output Power, V dd = 3. V, I dd = 52 ma, T A = 25 o C Response/dBm P1dB Psat Output IP3, V dd = 3. V, I dd = 52 ma, T A = 25 o C Output IP3/dBm
6 Mechanical Information Package Information and Dimensions aaa aaa θ bbb M SYMBOLS DIMENSIONS IN MILLIMETERS MIN NOM MAX A A1.2.5 A3.25REF. b D D1 1.5BSC E E BSC 3. e.5βsc L θ 12 aaa bbb.25.1 ccc.1 M.5 Recommended PCB Land Pattern
7 Pin Description Pin Diagram Functional Description Pin Function Description Schematic 3 RF in DC blocked and 5 ohm matched RF in 1 RF out DC blocked and 5 ohm matched RF out 14 Vdd Power supply voltage Decoupling and bypass caps required Vdd 4,9 and die paddle Ground Connect to RF / DC ground GND
8 Applications Information Application Circuit Biasing and Operation The CMD7P3 is biased with a single 3. V positive drain supply. RF power can be applied at any time. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
9 Applications Information Evaluation Board The circuit board shown has been developed for optimized assembly at CMDS. A sufficient number of via holes should be used to connect the top and bottom ground planes. As surface mount processes vary, careful process development is recommended. Bill of Material Designator Value Description J1, J2 SMA End Launch Connector P1 6 Pin Header C1.33 µf Capacitor, Tantalum C2 1 pf Capacitor, 63 C3 1 pf Capacitor, 42 U1 PCB CMD7P3 Low Noise Amplifier CM1118A Evaluation PCB
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v9.511 AMPLIFIER, 3. - 4.5 GHz Typical Applications The HMC326MS8G / HMC326MS8GE is ideal for: Microwave Radios Broadband Radio Systems Wireless Local Loop Driver Amplifier Functional Diagram Features
More informationFeatures. = +25 C, Vdd = +5V, Rbias = 10 Ohms*
Typical Applications Functional Diagram The HMC36LP3 / HMC36LP3E is ideal for: Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA Private Land Mobile Radio GSM/GPRS & EDGE UHF
More informationAnalog Devices Welcomes Hittite Microwave Corporation
Analog Devices Welcomes Hittite Microwave Corporation www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.915 GaAs MMIC 6-BIT DIGITAL Typical Applications The HMC648ALP6E is ideal for:
More informationFeatures. = +25 C, Vdd = 5V, Idd = 85 ma*
Typical Applications The is an ideal gain block or driver amplifi er for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Functional Diagram Features Saturated Power: +23 dbm @ 27% PAE Gain: db
More informationTGA2521-SM GHz Linear Driver Amplifier Key Features Measured Performance
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
More informationFeatures. = +25 C, Vdd = 7V, Vctl = 1V, Idd = 165mA*
HMC7LC DRIVER, DC - GHz Typical Applications The HMC7LC is ideal for: Gbps NRZ MZ & Low V Π Modulator Driver Gbps RZ Transmission 4 Gbps DQPSK Broadband Gain Block for Test & Measurement Equipment Military
More information1.0 6 GHz Ultra Low Noise Amplifier
1.0 6 GHz Ultra Low Noise Amplifier Features Frequency Range: 1.0-6 GHz 0.7 db mid-band Noise Figure 18 db mid band Gain 13dBm Nominal P1dB Bias current : 50mA 0.15-um InGaAs phemt Technology 16-Pin QFN
More informationHMC639ST89 / 639ST89E
Typical Applications The HMC39ST9(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Functional Diagram Electrical Specifications,
More informationFeatures. = +25 C, Vdd= +3V. Parameter Min. Typ. Max. Units Frequency Range GHz Gain db
7 Typical Applications The HMC286 / HMC286E is ideal for: BlueTooth Home RF 82.11 WLAN Radios PCMCIA Platforms Functional Diagram v3.41 Features 2.4 GHz LNA Noise Figure: 1.7 db Gain: 19 db Single Supply:
More information10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114
9 13 16 FEATURES High saturated output power (PSAT): 41.5 dbm typical High small signal gain: db typical High power gain for saturated output power:.5 db typical Bandwidth: 2.7 GHz to 3.8 GHz High power
More informationBROADBAND DISTRIBUTED AMPLIFIER
ADM-126-83SM The ADM-126-83SM is a broadband, efficient GaAs PHEMT distributed amplifier with an integrated bias tee in a 4mm QFN surface mount package, designed to provide efficient LO drive for T3 mixers.
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