Applications. Symbol Parameter Ratings Units V DS Drain to Source Voltage 100 V V GS Gate to Source Voltage ±20 V

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1 FDD386 N-Channel PowerTrench MOSFET V, 9A, 36mΩ Features Max r DS(on) = 36mΩ at V GS = V, I D = 5.9A High performance trench technology for extremely low r DS(on) % UIL tested RoHS Compliant General Description October 8 tm This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor s advanced Power Trench process. This part is tailored for low r DS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications DC-AC Conversion Synchronous Rectifier D G D S D-PAK TO-5 (TO-5) G S MOSFET Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage V V GS Gate to Source Voltage ± V I D -Continuous T A = 5 C (Note a) 6. A Drain Current -Continuous (Silicon limited) T C = 5 C 9 -Pulsed 6 E AS Single Pulse Avalanche Energy (Note 3) mj Power Dissipation T P C = 5 C 69 D Power Dissipation T A = 5 C (Note a) 3. W T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case.8 R θja Thermal Resistance, Junction to Ambient (Note a) 4 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDD386 FDD386 D-PAK (TO-5) 3 mm 5 units 8 Fairchild Semiconductor Corporation FDD386 Rev.C

2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 5µA, V GS = V V BV DSS Breakdown Voltage Temperature T J Coefficient I D = 5µA, referenced to 5 C 98 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 8V, V GS = V µa I GSS Gate to Source Leakage Current V GS = ±V, V DS = V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 5µA V V GS(th) Gate to Source Threshold Voltage I T J Temperature Coefficient D = 5µA, referenced to 5 C -.4 mv/ C V GS = V, I D = 5.9A 9 36 r DS(on) Static Drain to Source On Resistance mω V GS = V, I D = 5.9A, T J = 5 C 5 64 g FS Forward Transconductance V DS = V, I D = 5.9A S Dynamic Characteristics C iss Input Capacitance 3 74 pf V DS = 5V, V GS = V, C oss Output Capacitance 3 pf f = MHz C rss Reverse Transfer Capacitance 45 7 pf R g Gate Resistance f = MHz.6 Ω Switching Characteristics t d(on) Turn-On Delay Time 6 9 ns V DD = 5V, I D = 5.9A, t r Rise Time ns V GS = V, R GEN = 6Ω t d(off) Turn-Off Delay Time 4 39 ns t f Fall Time 7 5 ns Q g Total Gate Charge at V 3 nc V DD = 5V, I D = 5.9A Q gs Gate to Source Charge 7. nc Q gd Gate to Drain Miller Charge 6.3 nc Drain-Source Diode Characteristics V V SD Source to Drain Diode Forward Voltage GS = V, I S =.A (Note ).7. V V GS = V, I S = 5.9A (Note ).8.3 t rr Reverse Recovery Time ns I F = 5.9A, di/dt = A/µs Q rr Reverse Recovery Charge 4 64 nc Notes: : R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θja is determined by the user s board design. a) 4 C/W when mounted on a b) 96 C/W when mounted in pad of oz copper on a minimum pad. : Pulse Test: Pulse Width < 3µs, Duty cycle <.%. 3: Starting T J = 5 C, L = 3mH, I AS = 9A, V DD = V, V GS = V. 8 Fairchild Semiconductor Corporation FDD386 Rev.C

3 Typical Characteristics T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = V V GS = 8V Figure PULSE DURATION = 8µs DUTY CYCLE =.5%MAX V GS = 7V V GS = 6V V DS, DRAIN TO SOURCE VOLTAGE (V) I D = 5.9A V GS = V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE On-Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized On- Resistance vs Junction Temperature rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) Figure 4. V GS = 6V PULSE DURATION = 8µs DUTY CYCLE =.5%MAX V GS = 7V I D, DRAIN CURRENT (A) I D = 5.9A T J = 5 o C V GS = 8V V GS = V PULSE DURATION = 8µs DUTY CYCLE =.5%MAX T J = 5 o C V GS, GATE TO SOURCE VOLTAGE (V) On-Resistance vs Gate to Source Voltage ID, DRAIN CURRENT (A) PULSE DURATION = 8µs DUTY CYCLE =.5%MAX V DS = V T J = 5 o C T J = 5 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics IS, REVERSE DRAIN CURRENT (A) V GS = V T J = 5 o C T J = 5 o C T J = -55 o C E V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 8 Fairchild Semiconductor Corporation FDD386 Rev.C 3

4 Typical Characteristics T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) I D = 5.9A Figure V DD = 5V V DD = 5V Q g, GATE CHARGE (nc) V DD = 75V V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage T J = 5 o C T J = 5 o C CAPACITANCE (pf) I D, DRAIN CURRENT (A) f = MHz V GS = V R θjc =.8 o C/W V GS = V C iss C oss C rss t AV, TIME IN AVALANCHE (ms) T C, CASE TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Case Temperature 5 VGS = V ID, DRAIN CURRENT (A) THIS AREA IS LIMITED BY r ds(on) T J = MAX RATED R θjc =.8 o C/W T C = 5 o C V DS, DRAIN to SOURCE VOLTAGE (V) us ms ms DC 3 P(PK), PEAK TRANSIENT POWER (W) 4 3 R θjc =.8 o C/W t, PULSE WIDTH (sec) Figure. Forward Bias Safe Operating Area Figure. Single Pulse Maximum Power Dissipation 8 Fairchild Semiconductor Corporation FDD386 Rev.C 4

5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc DUTY CYCLE-DESCENDING ORDER D = R θjc =.8 o C/W t, RECTANGULAR PULSE DURATION (sec) DUTY CYCLE-DESCENDING ORDER Figure 3. Transient Thermal Response Curve FOR TEMPERATURES ABOVE 5 o C DERATE PEAK P DM CURRENT AS FOLLOWS: 5 T C I =I t t NOTES: T C = 5 o C DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C NORMALIZED THERMAL IMPEDANCE, Z θja D = R θja = 4 o C/W (Note a) P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A t, RECTANGULAR PULSE DURATION (sec) Figure 4. Transient Thermal Response Curve DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, Z θja. D = R θja = 96 o C/W (Note b) P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A t, RECTANGULAR PULSE DURATION (sec) Figure 5. Transient Thermal Response Curve 8 Fairchild Semiconductor Corporation FDD386 Rev.C 5

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