NEC / CEL Components. 2.4GHz ZigBee and ISM Band Applications
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1 NEC / CEL Components For 2.4GHz ZigBee and ISM Band Applications 2008 v.6
2 Components for 2.4 GHz Designs Bluetooth, ZigBee, ISM Band Transmitters SPDT Switches*: upg2214tb/tk upg2030tk upg2179tb upg2158t5k upg2012tk upg2015tb LNA Devices: NESG3031M05/M14 NE662M04 NE3508M04 upc8233tk LNA RF Transceiver PA SP3T Switch: upg2150t5l *See page on power considerations for switches PA ICs: upg2314t5n upg2301tq upg2250t5n
3 2.4GHz Power Amplifiers Quick Guide: P/N Pout (typical, at T=25C) upg2314t5n: +20 dbm at 3V upg2301tq: +23 dbm at 3.3V upg2250t5n: +20 dbm at 1.8V upg2250t5n: +25 dbm at 3V
4 3.0V GaAs HBT PA IC upg2314t5n Features Low Current Consumption 20dB Variable Gain Control Shut Down Function Smaller & Lower Height Package Applications Bluetooth Class 1, ZigBee, ISM Band Performance (typical ) Frequency 2.4 to 2.5GHz Supply voltage: VCC1,2 = Vbias= Venable = 3V Output Power: = 3V, Pin=+0dBm Gain Control Range: = 0 to 3.0V, Pin=+0dBm Operating Current: 65 ma Pin=+0dBm, Vcont =3V 1.5 In Mass Production pinTSON PKG 0.4 Thickness: 0.4mm max.
5 upg2314t5n Evaluation Board Layout Vcont Vbias+Venable IN 3.9nH 2.7nH 1nF 22nH 10pF 1nF OUT Vcc1 Vcc2 Total Parts : 6pcs
6 upg2314t5n Evaluation Board Schematic Ven+Vbias Vcont Vcc2 Total ; 6pcs Pin 3.9nH 2.7nH upg2314t5n 1nF 22nH 10pF Pout 1nF Vcc1
7 upg2314t5n Pin vs. Pout, PAE, Icc Test Conditions : f = 2450MHz,Vcc1=Vcc2=Vbias+Venable=Vcont=3.0V, with external input & output matching circuits
8 upg2314t5n Vcont vs. Pout, PAE, Icc Test Conditions : f = 2450MHz,Vcc1=Vcc2=Vbias+Venable=3.0V, Pin=+0dBm, with external input & output matching circuits
9 upg2314t5n Ven+Vbias vs. Pout, PAE, Icc Test Conditions : f = 2450MHz,Vcc1=Vcc2=Vcont=3.0V, Pin=+0dBm, with external input & output matching circuits
10 Features Low Current Consumption 20dB Variable Gain Control Shut Down Function Applications Bluetooth, ZigBee, ISM Band 3.3V GaAs HBT PA IC upg2301tq In Mass Production 10pinTSON PKG 2.30mm RF Performance (typical) Frequency 2.4 to 2.5GHz Supply voltage: VCC1,2 = Vbias = 3.3V, Venable = 2.9V Output Power: = 2.5V, Pin=+4dBm Gain Control Range: = 0 to 2.5V, Pin=+4dBm Operating Current: 120mA Pin=+4dBm, Vcont = 2.5V +20dBm Output, Vcc = 3.3V, Icc = 100mA 2f 0 3f 0 4f 0 5f 0 49 dbc 40 dbc 54 dbc 60 dbc 2.55 mm Thickness: 0.6mm MAX Lead Pitch: 0.4mm
11 upg2301tq Evaluation Circuit Only 8 pcs of external 0603 size chip components are needed
12 upg2301tq Pin vs. Pout, PAE, Icc Test Conditions : f = 2450MHz,Vcc1=Vcc2=Vbias=3.3V,Venable=2.9V, Vcont=2.5V, with external input & output matching circuits Pout [dbm], PAE [%] Pout PAE Icc PAE Icc Pout Icc [ma] Pin [dbm] 0
13 upg2301tq Vcont vs. Pout, PAE, Icc Test Conditions : f = 2450MHz,Vcc1=Vcc2=Vbias=3.3V,Venable=2.9V, Pin=+4dBm, with external input & output matching circuits Pout [dbm], PAE [%] Pout PAE Icc PAE Icc Pout Icc [ma] Vcont [V] 0
14 upg2301tq Venable vs. Pout, PAE, Icc Test Conditions : f = 2450MHz,Vcc1=Vcc2=Vbias=3.3V,Vcont=2.5V,Pin=+4dBm, With external input & output matching circuits Pout [dbm], PAE [%] Pout PAE Icc PAE Icc Pout Icc [ma] Venable [V]
15 Features 1.8V to 3.0V Operation Shut Down Function 0.4mm Lower Height Package Applications V GaAs PA IC upg2250t5n Bluetooth Class 1 EDR, ZigBee, ISM Band Preliminary Performance (Typical) Frequency Range: 2.4 to 2.5GHz In Mass Production 6pin TSON PKG dd3 Vcont N/AOUT&Vdd Supply voltage: Vdd =3.0V or 1.8V, Vcont= 1.8V Output Power: +25dBm, Vdd=3.0V +20dBm, Vdd = = 1.8V, Pin = -2dBm Current: Pout=+25dBm, Vdd=3.0V Pout=+20dBm, Vdd=1.8V IN Vdd dd1 Vdd2 1.5x1.5x0.4 mm (0.5mm pitch)
16 upg2250t5n Evaluation Board Schematic
17 upg2250t5n Pin vs. Pout, PAE, Icc Vdd = 3V Vdd = 3V
18 Vdd = 3V upg2250t5n Vcont vs. Pout, PAE, Icc
19 upg2250t5n Pin vs. Pout, PAE, Icc Vdd = 1.8V Vdd = 1.8V
20 Vdd = 1.8V upg2250t5n Vcont vs. Pout, PAE, Icc
21 2.4GHz Application Example 2.4GHz ISM Band / ZigBee Transceiver Tx/Rx Rx Rx MC13203 Tx: 0 dbm PA Tx: +24 dbm MC13213 Etc. Also Ember EM250/260 ATMEL AT86RF230 TI Chipcon cc2430/2500 ST Micro SN250 Nordic nrf2401a. Transceiver Single Ended Matching Network CEL Range Extension Solution
22 Features GHz, Internally Matched 6 External Components 2.5V to 3.6V Operation with Vcont = 1.8V Shut Down Function Applications +25dBm GaAs PA IC upg2251t6m Bluetooth Class 1 EDR, ZigBee, ISM Band Preliminary Performance (Typical) Frequency Range: 2.4 to 2.5GHz Supply voltage: Vdd = 3.0V, Vcont = 1.8V Output Power: +25dBm, Pin = -5dBm Harmonics: 2fo out 3fo -27dBc Current: Pout = +25dBm, Vdd = = 1.8V, Pin = -5dBm NEW DS: Oct 08 MP: Feb pin TSQFN 2.0 x 2.0 x 0.37 mm
23 upg2251t6m Eval Data
24 PA ICs Measured Data Device Frequency Bias PSAT Eval Boards In Stock Range Extender Boards (SW-PA-SW) upg2314t5n 915 MHz 3.0 V +20 dbm 2.4 GHz 3.0 V dbm upg2301tq 915 MHz 3.3 V dbm 2.4 GHz 3.3 V dbm upg2250t5n 915 MHz 3.0 V dbm 2.4 GHz 3.0 V dbm upg2118k 915 MHz 3.2 V dbm 2.4 GHz 3.2 V dbm
25 Switches
26 Power Considerations for Switches 3 Min Typ 2 1 Better to operate below the min P(0.1) db point to assure the switch will not contribute excess loss Never want to operate at P1dB, switch loss will be ~1.4 db, high power / heat dissipation in the pkg, highly non-linear, possible reliability risk Just starting to compress by 0.1 db 3 2 1
27 P(0.1dB) Points of NEC-CEL CEL SPDT Switches Part No. # of Controls Package Size (mm) Pin (0.1dB) (dbm) Minimum Pin (0.1dB) (dbm) Typical Voltage for P(0.1dB) Spec upd5713tk x 1.3 x V upg2012tk x 1.3 x V upg2012tb x 2.1 x V upg2160t5k x 1.0 x V upg2015tb x 2.1 x V upg2010tb x 2.1 x V upg2159t6r x 1.0 x V upg2214tk x 1.3 x V upg2214tb x 2.1 x V upg2163t5n x 1.5 x 0.37 No Spec Approx V upg2185t6r x 1.0 x 0.37 No Spec Approx V upg2030tk x 1.3 x V upg2179tb x 2.1 x V upg2158t5k x 1.0 x V upg2009tb x 2.1 x V upg2157t5f x 3.0 x 0.75 No Spec Approx V upg2176t5n x 1.5 x 0.37 No Spec Approx V upg2155tb x 2.1 x 0.90 No Spec V These switches can be used at various voltages. P(0.1 db) is highly dependent on the applied voltage
28 Recommended PA Switch Pairs PA operated at or near saturation Output PA P SAT Switch IC P 0.1dB upg2214tb/tk +23dBm (Typ) upg2314t5n +20 dbm +21dBm (Min) upg2179tb +29 dbm (Typ) upg2301tq +23 dbm dbm (Min) upg2030tk +27 dbm (Typ) dbm (Min) upg2179tb +29 dbm (Typ) upg2250t5n +25 dbm dbm (Min) upg2030tk +27 dbm (Typ) dbm (Min) upg2214tb is recommended as the lowest cost input switch.
29 Compact SPDT upg2214tb / TK Features - Low insertion loss, high isolation - Specified at 1.8V (as well as 3V) - Two Package Choices Applications - Mobile Comm., b/g, Bluetooth, ZigBee Performance ( typical ) - Frequency: 50 MHz to 3.0 GHz - Control Voltage: +1.8 to 5.3 / 0V (3.0V typ) - Insertion Loss: 2.5GHz - Isolation: 2.5GHz - Pin(0.1dB): +23dBm +3.0V / 0V - Pin(0.1dB): +21dBm +3.0V / 0V - Pin(0.1 db): +16 dbm +1.8V / 0V Low Cost Switch for Bluetooth & ZigBee OUT1 GND OUT2 1.1mm In Mass Production 1 6 Vcont1 2 3 TB Package (SC-70 / SOT-363) 2.0 x 2.1 x 0.9 mm G3H mm 0.55mm TK Package 1.5 x 1.3 x 0.55 mm 5 4 IN Vcont2
30 Low Power Single Control SPDT upg2012tk upg2012tb Features - 2.8V Single Control Voltage - Two package choices Applications - Mobilecomm., Bluetooth, ZigBee RF Performance (typical) - Frequency: 500 MHz to 2.5 GHz - Control Voltage: +2.8V / 0V, VDD=+2.8V - Insertion Loss: 2.5GHz - Isolation: 2.5GHz (TB) 2.5GHz (TK) - Pin(0.1dB): +20.5dBm +2.8V / 0V - Pin(0.1dB): +17.5dBm +2.8V / 0V - Pin( 1 db): +2.8V / 0V - Switching Speed: 300nS typ. Designed into ZigBee reference designs In Mass Production OUT1 GND OUT TB Package (SC-70 / SOT-363) 2.0 x 2.1 x 0.9 mm 1.1mm G3H mm VDD IN Vcont 0.55mm TK Package 1.5 x 1.3 x 0.55 mm
31 Comparison of TK and TB Packages upg2012 and upg2214 are available in both TB and TK packages TK Industry Standard SOT-363 / SC-70 and NEC s TB package TK NEC s TK package
32 Medium Power, Single Control SPDT upg2015tb Concept -2.8V Single Control Voltage ( V) Application - 800MHz to 2.5GHz band Mobile Comm., Bluetooth, ZigBee, ISM Band Transceivers RF Performance - Frequency : f = 500M to 2.5GHz - Supply Voltage : VCONT = +2.8V / 0V, VDD=+2.8V - Insertion Loss : LINS = 0.35dB f=2.5ghz - Isolation : ISL = 25dB f=2.5ghz - Pin(0.1dB) : +27.0dBm VCONT = +2.8V / 0V - Pin(0.1dB) : +25.5dBm V CONT = +2.8V / 0V - Switching Speed : tsw = 300nS typ. - 6pin Super Mini Mold Package (SOT-363 style) In Mass Production OUT2 GND OUT Block Diagram G3J 6pin super MM ( 2.0X1.25mm ) Vcont IN VDD
33 Medium Power SPDT upg2179tb Features - Low insertion loss and high isolation Applications b/g, Bluetooth, ZigBee - Mobilecomm Performance ( typical ) -Frequency Range: 500 MHz to 3.0 GHz -Control Voltage: +2.5V to +5.3V, 0V -Insertion Loss: 0.35dB 2.5GHz - Isolation: 27dB 2.5 GHz - P(1.0 db): +32 dbm typ - P(0.1dB): +29 dbm typ - P(0.1dB): dbm min Industry Best 1-1.5W SPDT OUT1 OUT2 In Mass Production GND 1 6 Vcont IN TB Package (SC-70 / SOT-363) 2.0 x 2.1 x 0.9 mm Vcont2
34 Compact Medium Power SPDT in a Smaller Package upg2030tk Features - Low insertion loss and high isolation Applications -WLAN b/g, Mobilecomm - Bluetooth, ZigBee Performance ( typical ) - Frequency: 500 MHz to 2.5 GHz - Control Voltage +2.8V / 0V - Insertion Loss: GHz - Isolation : GHz In Mass Production OUT1 GND OUT Block Diagram & Package Dimensions 1.1mm G3R Vcont 1 IN Vcont 2 - Pin( 0.1 db): +2.8V - Switching Speed: 50nS typ. 1.5mm 0.55mm PKG Height : 0.6mm MAX
35 Ultra Compact SPDT Switch upg2158t5k Features - Smaller, thin Package - Alternative to chips for thin modules Applications - Mobilecomm, b,g, Bluetooth, ZigBee Antenna diversity, LO and BPF switching Performance ( typical ) - Frequency: 0.05 to 3.0GHz - Supply Voltage: +1.8 to 5.3 / 0V (2.7V typ) - Insertion Loss: GHz - Isolation: GHz - Pin(0.1dB): +2.7V / 0V - Small Package: 1.0 x 1.0 x 0.37mm Also specified at 1.8V In Mass Production Top View Bottom View 1.0x1.0x0.37mm
36 High Isolation SP3T Switch for Bluetooth b,g Features High Isolation between WiFi Tx and BT port Low Height Small Package Applications b/g + Bluetooth 2.4GHz-Band Communications upg2150t5l Performance ( Typical, at Vc=2.85V ) Frequency: 2.4 to 2.5GHz Control voltage:+2.85v / 0V Insertion Loss: 2.5GHz (RF1,RF2) Insertion Loss: GHz (RF3) Isolation: GHz WiFi Tx- BT Pin (1dB): TX, BT : +31 dbm Package: 10pin 2.0 x 2.0 x 0.4mm In Mass Production New 10-pin Package 0.5mm pitch (2.0 x 2.0 x 0.4 mm)
37 upg2150t5l Application Information Explanation of typical application for this switch: The upg2150t5l SP3T switch has been designed specifically for devices that enable both Wi-Fi ( b/g) and Bluetooth connectivity. A typical application diagram would look like the one on the right: The first two outputs (RF1 and RF2) are used for the transmit and receive sides (respectively) of the Wi-Fi RF solution. And the third output handles the Bluetooth communications, with another T/R switch to handle the Bluetooth transmit and receive functions. The performance of the upg2150t5l has been specified with this kind of application in mind, with extra isolation (35dB) provided for the RF3 port in particular. The three diagrams below summarize the different possible cases with the corresponding isolation values for each path. V CONT 1,2,3 ANT in upg2150t5l RF1 TX RF2 RX RF3 RX / TX Wi-Fi ( b/g) TX RX Bluetooth upg2150t5l 1 RF b/g TX upg2150t5l ISOL: 18dB 1 RF b/g TX ANT in 2 ISOL: 18dB RF b/g RX ISOL: 35dB ANT in 2 RF b/g RX ISOL: 35dB 3 RF3 Bluetooth TX / RX ISOL: 35dB 3 RF3 Bluetooth TX / RX On Path Off Paths ANT upg2150t5l 1 ISOL: 18dB in 2 ISOL: 18dB 3 RF1 RF2 RF b/g TX b/g RX Bluetooth TX / RX
38 2.4GHz LNA Devices
39 2.4GHz LNAs NE662M04 Si XSTR NESG3031M05 SiGe XSTR NE3508M04 GaAs FET upc8233tk SiGe:C IC Gain 12.4 db 12.6 db 13 db 16.6 db NF 1.5 db 0.9 db 0.8 db 1.3 db Input P1dB -11 dbm (-7 dbm) -7 dbm (-5 dbm) +1 dbm -20 dbm Bias 2V / 5mA (2V / 20mA) 2V / 5mA (3V / 20mA) 2V / 18mA 1.8V / 3.3mA Features Constant Gain, NF: 1.5V 3.0V Voltage Regulator (1.7V ~ 3.3V) Enable / Shutdown ESD Protection Cost Lowest Lower Low Low Measured Data from CEL Eval Boards
40 2.4GHz Performance Excellent Low Noise Figure 0.6dB, Ga=16dB (2V, 6mA) 0.7dB, Ga=17dB (2V, 10mA) High Linearity, Output P1dB +12.5dBm (3V, 20mA) UHS3 SiGe HBT fmax : 110GHz process technology High Break down voltage Vceo: 4.3V min NESG3031M05 / M14 = Low Noise SiGe HBT = (absolute maximum ratings) 2.4GHz NF Ga Parts Number NESG3031M05 NESG3031M14 Feature NF: 1.1dB Ga: 5.8GHz (Ic=6mA) flat-lead type M14 Vce=2V, Ic=6mA 0.6 db 16 db M05 PKG SIZE 2 x 1.25mm (0.59mm) 1.2 x 0.8mm (0.5mm)
41 Low Noise SiGe Tr Concept - Advanced SiGe transistor with NEC s High Voltage UHS2-HV process - Low Noise, High 2GHz Applications - Low Noise Amplifier for Mobile Communications, etc. - ISM Band LNA or Medium Power Stage Performance ( typical) -Low Noise Figure: (2V, 5mA) -High Linearity, P1dB: (3V, 20mA) NESG2031M05 0.7dB, 23dB 1.0GHz 0.8dB, 17dB 2.0GHz 1.3dB, 10dB 5.2GHz 1.0GHz 2.0GHz 5.2GHz Package M05 -Low Profile SOT-343 footprint: 2.0 x 2.1 x 0.59mm In Mass Production
42 Low Noise Si Transistor Concept - Low Noise, Low Current Si transistor made with with NEC s UHSO 25 GHz f t process - High Gain at Low Voltage, Low Current Applications - Low Noise Amplifier for ISM Band, ZigBee, Mobile Communications, etc. - Oscillator Applications for Communications Performance ( typical) -Low Noise Figure: (2V, 5mA) -High Output P 1dB : (2V, 20mA I CQ ) NE662M04 1.0dB, 21dB 1.0GHz 1.1dB, 16dB 2.0GHz 1.2dB, 14dB 2.5GHz 1.0GHz 2.0GHz Package M04 -Low Profile SOT-343 footprint: 2.0 x 2.1 x 0.59mm In Mass Production Pb-Free Product
43 N-Channel HJ-FET LNA NE3508M04 Discrete GaAs FET Device LNA for 2.4GHz Applications ZigBee, ISM Band, SDARS Antennas Operates from a Single Bias (Self-Bias Mode) Constant Gain with Voltage Bias 1.5V 3.0V In Mass Production
44 Process SiGe:C LNA IC upc8233tk 1.8V Operation technology SiGe:C HBT Process (UHS4) Application ZigBee, Bluetooth, GPS Performance 2.4GHz, 1.8V Vcc Low Supply Voltage, Low Noise, Low Current Supply Voltage:1.7V ~ 3.3V NF:1.3dB, Gain:16.6dB Input Return Loss(S11) :12dB Output Return Loss(S22) :12dB Icc = 3.3mA (@Vcc=1.8V, f=2.4ghz) Built-in Power Save function (VPSon: 1.0V~Vcc, VPSoff: 0~0.4V) Very robust Bandgap Regulator on chip (Small Vcc & Ta dependence) Included protection circuits for ESD Sample tested to 1.4kV (HBM) Package: 6pin L2MM (1.5*1.1*0.55mm) Pin Connections and Internal Block Diagram IN GND Power Save Bias New!! Now in MP Pb-Free Product Vcc GND OUT
45 upc8233tk Low Voltage Operation
46 upc8233tk Tuning LNA for 0.9, 1.5 & 2.4GHz Narrow Band Tuned Performance Evaluation Board Vcc = 1.8V 915 MHz 1.575GHz 2.4GHz (Reference Only) NF (db) Gain (db) InR.L. (db) OutR.L.(dB) upc8233tk Reference Circuit for L-S band L1 (nh) 915 MHz GHz GHz 4.7 C1 L1 C2 L2 R1 C4 C1 (pf) C2 (pf) L2 (nh) L3 (nh) C5 L3 C3 C3 (pf) C4 (pf) C5 (pf) R1 (ohm)
47 Thank You! For Additional Information, Technical Support or Product Availability, Contact: Tel: (408) Fax: (408)
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DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT PC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF
CMOS 2.4GHZ TRANSMIT/RECEIVE WLAN RFeIC
CMOS 2.4GHZ TRANSMIT/RECEIVE WLAN RFeIC 17 1 RX 2 3 VDD VDD DNC 16 15 14 13 12 11 10 ANT Description The RFX2402C is a fully integrated, single-chip, single-die RFeIC (RF Front-end Integrated Circuit)
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www.hnsmd.com hnsmd co.,ltd E-Mail: sales@hnsmd.com Sale Phone:86-592-5713956 GaAs Device PRODUCTS GaAs MMIC Analog IC Prescaler IC GaAs MCM Field Effect Transistor Low Noise GaAs HJ-FET Quick Reference
RF V, SWITCH AND LNA FRONT END SOLUTION
3.3V, SWITCH AND LNA FRONT END SOLUTION Package Style: QFN, -pin, 2mmx2mmx0.5mm C_BT 9 BT GND 7 Features Single Supply Voltage 3.0V to.5v Integrated SP3T Switch and LNA With Bypass Typical gain is db and
Features
HMC37SC7E v1.1.3-3. GHz Typical Applications The HMC37SC7E is ideal for: Cellular/PCS/3G WCS, mmds & ism Fixed Wireless & WLAN Private Land Mobile Radio Functional Diagram Features Single Supply: Vdd =
LNA VCC RX OUT TX IN VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT
2.4GHz TO 2.5GHz, 802.11b/g/n SINGLE-BAND FRONT END MODULE Package Style: QFN, 16-pin, 3.0 x 3.0 x 0.5 mm LNA EN C RX C TX BT 16 15 14 13 Features Single Module Radio Front- End Single Supply Voltage 3.0V
VCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT
3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2x2.2x0.45mm Features Single Power Supply 3.0V to 3.6V 30dB Typical Gain, Input ed to 50 2.4GHz to 2.5GHz Frequency Range
SPDT SWITCH GaAs MMIC
SPDT SWITCH GaAs MMIC! GENERAL DESCRIPTION! PACKAGE OUTLINE The NJG1608KB2 is a SPDT switch IC featured low insertion loss, medium handling power and high isolation. The NJG1608KB2 is suitable for switching
RFFM8511TR7. 4.9GHz to 5.85GHz a/n/ac WiFi Front End Module. Features. Applications. Ordering Information
4.9GHz to 5.85GHz 802.11a/n/ac WiFi Front End Module The provides a complete integrated solution in a single front end module (FEM) for WiFi 802.11a/n/ac systems. The ultra-small factor and integrated
RFFM V to 4.0V, 450MHz to 470MHz Transmit/Receive Front End Module
.V to.0v, 0MHz to 0MHz Transmit/Receive Front End Module Package Style: LGA, 8-Pin,.mm x.0mm NC 8 Features Tx Output Power: 0dBm Tx Gain: 0dB Separate 0Ω Tx/Rx Transceiver Interface Rx Insertion Loss:
Features. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter
Typical Applications Ideal as a Driver & Amplifier for: 2.2-2.7 GHz MMDS 3. GHz Wireless Local Loop - 6 GHz UNII & HiperLAN Functional Diagram Features P1dB Output Power: +14 dbm Output IP3: +27 dbm Gain:
High Isolation SP4T SWITCH
High Isolation SP4T SWITCH NJG1699MD7 GENERAL DESCRIPTION The NJG1699MD7 is a GaAs high isolation SP4T switch MMIC. It features low insertion loss and very high isolation. It has integrated DC blocking
RF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment
RF233 AMPLIFIER Typical Applications Broadband, Low Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low Power Applications Broadband Test Equipment Product Description
dbm Output Power at 1dB Compression 3.6GHz
Product Description Sirenza Microdevices SZA-344 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier
Features OBSOLETE. = +25 C, as a function of Vdd. Vdd = +3V Vdd = +5V Vdd = +5V Vdd = +5V Parameter
v5.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER,. - 3. GHz Typical Applications Broadband or Narrow Band Applications: Cellular/PCS/3G Fixed Wireless & Telematics Cable Modem Termination Systems
Data Sheet. ALM GHz 2.40 GHz 50 Watt High Power SPDT Switch with LNA Module. Features. Description. Specifications.
ALM-12224 2.30 GHz 2.40 GHz 50 Watt High Power SPDT Switch with LNA Module Data Sheet Description Avago Technologies ALM-12224 is a multi-chip integrated module that comprise of a 50 Watt CW high power
Features OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma
7 Typical Applications The HMC667LP2(E) is ideal for: WiMAX, WiBro & Fixed Wireless SDARS & WLAN Receivers Infrastructure & Repeaters Access Points Telematics & DMB Functional Diagram v2.11 Electrical
HIGH POWER SPDT SWITCH GaAs MMIC
HIGH POWER SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1681MD7 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1681MD7 features very low insertion loss, high isolation
HIGH POWER SP3T SWITCH GaAs MMIC
HIGH POWER SP3T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1682MD7 is a GaAs SP3T switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1682MD7 features very low insertion loss, high isolation
SP4T SWITCH GaAs MMIC
SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1519KC1 is a GaAs high power SP4T switch MMIC for antenna switch of dual mode cellular phone application such as GSM/DCS18. This switch is designed for an antenna
SGL0363Z. 5MHz to 2000MHz Low Noise Amplifier. Germanium. Simplified Device Schematic. Vpc. Narrow-band Matching Network. Gnd
5MHz to MHz Low Noise Amplifier Silicon Germanium 5MHz to MHz LOW NOISE AMPLIFIER SILICON GERMANIUM Package: SOT-363 Product Description RFMD s is a low power, low noise amplifier. It is designed for.7v
RF2126. RoHS Compliant & Pb-Free Product Typical Applications 2.5GHz ISM Band Applications
0 RF6 HIGH POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications.5GHz ISM Band Applications Commercial and Consumer Systems Digital Communication Systems Portable Battery-Powered
2.4~2.5 GHz High Power Amplifier Pin Details
24.2.28 is a linear, three-stages power amplifier MMIC with super high output power in 2.4GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device delivers 22 output
HMC326MS8G / 326MS8GE
v9.511 AMPLIFIER, 3. - 4.5 GHz Typical Applications The HMC326MS8G / HMC326MS8GE is ideal for: Microwave Radios Broadband Radio Systems Wireless Local Loop Driver Amplifier Functional Diagram Features
OBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description
v1.5 LO AMPLIFIER,.5-2.7 GHz Typical Applications The is ideal for: PCS / 3G Infrastructure Base Stations & Repeaters WiMAX & WiBro ISM & Fixed Wireless Functional Diagram Features Input IP3: +28 dbm Low
SZP-5026Z GHz 2W InGaP Amplifier
Product Description Sirenza Microdevices SZP-Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated
SPDT SWITCH GaAs MMIC
NJG115K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG115K75 is a 1bit control SPDT switch. The switch is used for WLAN system. The switch features low insertion loss, high isolation for high frequency
RF V TO 3.6V, 2.4GHz FRONT END MODULE
3.V TO 3.6V, 2.4GHz FRONT END MODULE Package Style: QFN, 2-Pin, 3.mmx3.mmx.mm NC VBAT VBAT NC 4 3 2 Features Tx Output Power=22dBm Integrated RF Front End Module with TX/RX switch, PA, filter, and DP2T
RF2420. Typical Applications Power Control in Communication Systems CMOS Compatible Programmable Attenuators
RF2420 PROGRAMMABLE ATTENUATOR Typical Applications Power Control in Communication Systems CMOS Compatible Programmable Attenuators Commercial and Consumer Systems Portable Battery-Powered Equipment Product
SP10T ANTENNA SWITCH GaAs MMIC
SP10T ANTENNA SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1686MHH is a GaAs SP10T antenna switch MMIC suitable for LTE/3G/GSM multimode applications. This switch includes on-chip decoder circuits and low pass
Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
Data Sheet. ALM GHz GHz 50 Watt High Power SPDT Switch with LNA Module. Features. Description. Specifications.
ALM-12124 1.88 GHz 2.025 GHz 50 Watt High Power SPDT Switch with LNA Module Data Sheet Description Avago Technologies ALM-12124 is a multi-chip integrated module that comprise of a 50 Watt CW high power
HMC639ST89 / 639ST89E
Typical Applications The HMC39ST9(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Functional Diagram Electrical Specifications,
AWL a/n/ac Power Amplifier, LNA and Tx/Rx Switch DATA SHEET - Rev 2.0
FEATURES Supports emerging 802.11ac high-data rate standard Fully integrated FEIC including 5GHz Power Amplifier, Low Noise Amplifier with Bypass mode and SP2T TX/RX Switch
Features. = +25 C, Vdc = +7V
amplifiers Typical Applications The is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram Features Ultra Low Phase Noise: -7 dbc/hz @ khz Noise Figure: 6 db Gain:
MCP to 2.5 GHz RF Front End IC. Description
Description The contains a power amplifier (PA), a low noise amplifier (), and two SPDT switch. It is a 0pins IC by 4 4mm QFN package. RF input and output impedance of are 50Ω matched. Therefore, precious
RF3857 DUAL CHANNEL LNA WITH BYPASS MODE
DUAL CHANNEL LNA WITH BYPASS MODE Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm Features Low Noise and High Intercept Point Adjustable Bias Current Power Down Low Insertion Loss Bypass Feature 1.8V to 4V
SGB-6433(Z) Vbias RFOUT
SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description RFMD s SGB-6433 is a high performance SiGe HBT MMIC amplifier
SZA-5044(Z) 4.9GHz to 5.9GHz 5V POWER AMPLIFIER. Features. Product Description. Applications. Package: QFN, 4mmx4mm
4.9GHz to 5.9GHz 5V Power Amplifier 4.9GHz to 5.9GHz 5V POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description RFMD s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier
2.4 GHz TX / RX Booster With Diversity Switch for IoT / BLE / ZigBee
2.4 GHz TX / RX Booster With Diversity Switch for IoT / BLE / ZigBee NC DNC NC TXRX 21 1 2 3 4 5 VDD VDD 20 19 18 DNC DNC 17 16 6 7 8 9 TXEN RXEN PDET Mode 10 SWant 15 IND 14 ANTA 13 12 ANTB 11 DESCRIPTION
RF1136 BROADBAND LOW POWER SP3T SWITCH
BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 db PCS Band 0.30 db High Isolation:
AWL /5 GHz a/b/g WLAN Power Amplifier Data Sheet - Rev 2.1
FEATURES 3.% EVM @ POUT = +19 dbm with IEEE 2.11a 6 QAM OFDM at 5 Mbps 3% EVM @ POUT = +2 dbm with IEEE 2.11g 6 QAM OFDM at 5 Mbps dbc 1st Sidelobe, 55 dbc 2nd sidelobe ACPR at +23 dbm with IEEE 2.11b
BSW MHz-6000MHz High Linearity Reflective SPDT RF switch. Product Description. Package Type. Device Features - Common.
Product Description The BSW6321 is a reflective SPDT RF switch that can be used in high power and good performance WiMAX 802.16, WLAN 802.11 a/b/g/n/ac/ax and DOCSIS 3.0/3.1 applications. This device is
HMC639ST89 / 639ST89E
v3.1 HMC63ST / 63STE AMPLIFIER,.2-4. GHz Typical Applications The HMC63ST(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Features
AWL GHz b/g/n WLAN PA, LNA, and RF Switch Data Sheet - Rev 2.0
. GHz.11b/g/n WLAN PA, LNA, and RF Switch Data Sheet Rev. FEATURES 3.3 % EVM @ POUT = +1 dbm with IEEE.11g QAM OFDM at 5 Mbps 75 ma Transmit Path Current Consumption at POUT = +1 dbm SP3T RF Switch to
SZA-2044 / SZA-2044Z GHz 5V 1W Power Amplifier
Product Description Sirenza Microdevices SZA-244 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier
RF GHz ISM Band Applications Digital Communication Systems PCS Communication Systems
RF6.5GHz ISM Band Applications Digital Communication Systems PCS Communication Systems The RF6 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide
TQM Advance Data Sheet
Functional Block Diagram Vcc1 RF In Vmode Vref Input Match 1st Stage PA Product Description 2nd Stage 1 bit Bias Control Output Match Vcc2 RF Out GND GND The TQM713024 is a 3V, 2 stage GaAs HBT Power Amplifier
SPDT SWITCH GaAs MMIC
NJG181K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG181K75 is a SPDT switch IC suited for switching transmit/receive signals at 82.11 a/b/g/n/ac applications. The NJG181K75 features low insertion
High Isolation SPDT SWITCH
High Isolation SPDT SWITCH GENERAL DESCRIPTION The NJG1697EM1 is a 1bit control GaAs high isolation SPDT switch MMIC. The NJG1697EM1 features very high isolation and low control voltage. It has integrated
2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07
The is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for high-power applications with good power-added efficiency while operating over the 2.4-2.5
Features. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
v4.1217 HMC49LP4E Typical Applications This amplifier is ideal for use as a power amplifier for 3.3-3.8 GHz applications: WiMAX 82.16 Fixed Wireless Access Wireless Local Loop Functional Diagram Features
RFFM V to 5.0V, 2.4GHz to 2.5GHz b/g/n/ac WiFi Front End Module. Features. Applications. Ordering Information
3.0V to 5.0V, 2.4GHz to 2.5GHz 802.11b/g/n/ac WiFi Front End Module The RFFM4293 provides a complete integrated solution in a single front end module (FEM) for WiFi 802.11b/g/n/ac and Bluetooth systems.
RF5187. RoHS Compliant & Pb-Free Product Typical Applications. 2.14GHz UMTS Systems. PCS Communication Systems Digital Communication Systems
0 RF5187 LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications 2.14GHz UMTS Systems PCS Communication Systems Digital Communication Systems Commercial and Consumer Systems Product
SiGe:C LOW NOISE AMPLIFIER FOR GPS
DESCRIPTION The µpc8tn is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics,
5 V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER
V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER UPC278TB FEATURES GAIN vs. FREQUENCYand TEMPERATURE HIGH DENSITY SURFACE MOUNTING: pin super minimold or SOT-33 package HIGH GAIN: 1 db TYP SATURATED OUTPUT
DISCONTINUED. Preliminary. Data Sheet. GaAs Integrated Circuit SP3T Switch for Bluetooth and a/b/g DESCRIPTION FEATURES APPLICATIONS
μpg243tz GaAs Integrated Circuit SP3T Switch for Bluetooth and 82.a/b/g DESCRIPTION Preliminary Data Sheet The μpg243tz is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This
DPDT SWITCH GaAs MMIC
DPDT SWITCH GaAs MMIC NJG1528KC1 Revised Feb./16/01 Ver.2 GENERAL DESCRIPTION NJG1528KC1 is a GaAs high power DPDT switch MMIC for antenna switch of tri- and dual-mode cellular phone application such as
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF
SPDT SWITCH GaAs MMIC
NJG181K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG181K75 is a SPDT switch IC suited for switching transmit/receive signals at 82.11 a/b/g/n/ac applications. The NJG181K75 features low insertion
2.4GHZ CMOS WLAN / BT DUAL-MODE RFEIC WITH PA, LNA & SP3T
2.4GHZ CMOS WLAN / BT DUAL-MODE RFEIC WITH PA, LNA & SP3T ANT DESCRIPTION DET VMODE 1 2 3 16 15 14 13 12 11 10 RFX8425 is a pure CMOS-based, single-chip/single-die RFeIC (RF Front-end Integrated Circuit)
Data Sheet. MGA High Linearity ( ) GHz Power Amplifier Module. Features. Description. Specifications. Applications.
MGA-43003 High Linearity (1.805 1.88) GHz Power Amplifier Module Data Sheet Description Avago Technologies MGA-43003 is a fully matched power amplifier for use in the (1.805-1.88) GHz band. High linear
RF1 RF2 RF3 RF4. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS
BROADBAND HIGH POWER SP4T SWITCH Package Style: QFN, 12-pin, 2.5mmx2.5mm Features 2kV HBM ESD Protection on All Ports Low Frequency to >2.7GHz Operation Low Insertion Loss: 0.4dB at 1GHz Very High Isolation:
RF9986. Micro-Cell PCS Base Stations Portable Battery Powered Equipment
RF996 CDMA/TDMA/DCS900 PCS Systems PHS 500/WLAN 2400 Systems General Purpose Down Converter Micro-Cell PCS Base Stations Portable Battery Powered Equipment The RF996 is a monolithic integrated receiver
MGA-645T6 Data Sheet Description Features Component Image Typical Performance 4FYM Pin Configuration GND Top View Applications Simplified Schematic
MGA-5T Low Noise Amplifier with Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Avago Technologies MGA-5T is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA) with Bypass/
HMC589ST89 / 589ST89E. Features OBSOLETE. DC GHz GHz GHz. db Gain 22
v.71 HMC59ST9 / 59ST9E Typical Applications The HMC59ST9 / HMC59ST9E is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications
TQP Preliminary Data Sheet
Functional Block Diagram Product Description The TQP770001 Bluetooth PA is designed on TriQuint s advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness.
RFFM4503TR7. Features. Applications. Ordering Information. Package: Laminate, 16-pin, 3.0mm x 3.0mm x 1.0mm
RFFM4503 4.9GHz to 5.85GHz 802.11a/n/ac Wi-Fi Front End Module The RFFM4503 provides a complete integrated solution in a single front end module (FEM) for Wi-Fi 802.11a/n/ac systems. The ultrasmall factor
MGA Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package. Features. Applications. VBias
MGA-4 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Avago Technologies MGA-4 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA) with
HMC454ST89 / 454ST89E. Features. = +25 C, Vs= +5V [1]
![HMC454ST89 / 454ST89E. Features. = +25 C, Vs= +5V [1]](/thumbs/96/128456064.jpg "HMC454ST89 / 454ST89E. Features. = +25 C, Vs= +5V [1]")
Typical Applications The HMC44ST8 / HMC44ST8E is ideal for applications requiring a high dynamic range amplifi er: GSM, GPRS & EDGE CDMA & W-CDMA CATV/Cable Modem Fixed Wireless & WLL Features Output IP3:
RFPA TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER
3 TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER Package Style: QFN, 16-Pin, 3 mm x 3 mm Features 0.5 W CW Output Power at 3.6 V 1 W CW Output Power at 5 V 32 db Small Signal Gain at 900 MHz
10 W, Failsafe, GaAs, SPDT Switch 0.2 GHz to 2.7 GHz HMC546LP2E
FEATURES High input P.dB: 4 dbm Tx Low insertion loss:.4 db High input IP3: 67 dbm Positive control: V low control; 3 V to 8 V high control Failsafe operation: Tx is on when no dc power is applied APPLICATIONS
CMOS 5GHz WLAN a/n/ac RFeIC WITH PA, LNA, AND SPDT
CMOS 5GHz WLAN 802.11a/n/ac RFeIC WITH PA, LNA, AND SPDT Description RX 1 2 LNA_EN 16 ANT 15 14 13 12 11 RFX8055 is a highly integrated, single-chip, single-die RFeIC (RF Front-end Integrated Circuit)
30dB P IN =25dBm. 0.50dB P IN =25dBm. 33dB P IN =25dBm. 21dB
NJG1HA8 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1HA8 is a GaAs SPDT switch IC suited for antenna switch of WiMAX application and other wireless handsets. The NJG1HA8 features high power handling,
Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain
Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Marine Radar Military EW & ECM Functional Diagram Features High Saturated Output Power: dbm @ % PAE