About CEL. CEL Headquarters Patrick Henry Drive Santa Clara, CA Tel: (408) PRODUCTS by APPLICATION

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2 About CEL California Eastern Laboratories (CEL) is an engineering, sales and marketing company focused on RF Semiconductors, Optical Semiconductors and Wireless Connectivity Solutions. PRODUCTS by APPLICATION Front End Components Up to GHz Applications LNAs for to GHz Applications.4 &.GHz WLAN & WLAN Infrastructure Devices 4 PRODUCT SPECIFICATIONS RF Switch ICs CEL serves designers, OEMs and contract manufacturers in various RF, Wireless and Optical markets. With over years experience in high frequency design, customer support and fulfillment, CEL is ide ally positioned to provide its customers with a stable supply of products to meet their specific needs. SPDTs (Single Pole Double Throw) SPTs (Single Pole Triple Throw) DPDTs (Double Pole Double Throw) GaAs FETs Low Noise GaAs FETs, to GHz Silicon MOSFET Devices RF Power LD-MOSFETs CEL maintains extensive inventories and provides engineering and applications assistance at its technical centers in Santa Clara, CA., Wauconda, IL and Boulder, CO. The company supports customers through sales offices, sales representatives and distributors in numerous locations. MOSFET for Microphone Impedance Conversion Silicon Bipolar Transistors Small Signal Silicon Devices Medium Power Transistors 9 Twin Transistors 9 Silicon RFICs V Silicon MMIC Amplifiers V Silicon MMIC Amplifiers Upconverters Downconverters Dimensions Product Longevity Program Visit us at cel.com/rf for the most up to date information. CEL Headquarters 490 Patrick Henry Drive Santa Clara, CA 904 Tel: (40) 9-0

3 Front End Components Up to GHz Applications Wi-Fi Bluetooth ZigBee Automated Meter Reading Mesh & Home Area Networks ISM Band applications LNAs IN Transceiver High/Medium Power RFIC Switches OUT Power Amplifiers Low Power RFIC Switches RFIC Switches (additional P/Ns available, see page ) 40MHz 9MHz.4GHz GHz UPG409TB / TX SPDT, High power, wide bandwidth, SOT- and TSON package options UPG40TB / TK SPDT, Medium power, SOT- and smaller package options UPG40TK SPDT, Medium power, small package (opposite logic vs. UPG40TX) CKRFMM SPDT, Medium Power, SOT- CKRFXS0 SPDT, Medium Power, wide bandwidth, small package UPG4TN DPDT, Diversity/Transfer Switch (two selectable RF paths on) Power Amplifier Transistors (additional P/Ns available, see page & 9) 40MHz 9MHz.4GHz GHz NE099A +9.dBm, 9W,.V LD MOSFET NE04 +dbm, W,.V LDMOS FET NE4M04 +dbm,.v Silicon Discrete NEM04 +dbm,.0 V Silicon Discrete NEM04 +dbm,.0 V Silicon Discrete Low Noise Amplifier Transistors 40MHz 9MHz.4GHz GHz NEM04 Silicon Discrete, NF =., Ga =.0, OIP = GHz NE09M04 GaAs FET, NF = 0.40, Ga =., OIP = GHz NE0M04 GaAs FET, NF = 0.4, Ga = 4.0, OIP = GHz

4 LNAs for to GHz Applications Tuner/ Receiver FIRST STAGE Filter SECOND STAGE THIRD STAGE NEM04 NE09M04 NEM04 NEM04 NE0M04 NEM04 NE0M04 LNA Performance (see Data Tables for additional specifi cations) Number Description NF Gain PdB NEM04 Silicon Bipolar GHz + M04 NE0M04 GaAs HJ-FET GHz GHz +.0 M04 NE09M04 GaAs HJ-FET GHz +4.0 M04 NEM04 GaAs HJ-FET GHz + M04

5 .4 &.GHz WLAN & WLAN Infrastructure Devices.4 GHz - GHz Chipset Transceiver.4 GHz SPDT, SPT or DPDT RFIC Switches - GHz GaAs RFIC Switches to GHz UPG40TB SPDT, V, 0.0dB Insertion Loss, High ESD immunity UPG409TB SPDT 4.0GHz, Insertion Loss: GHz, UPG40TK SPDT,. or.v control voltage, 0.4dB Insertion GHz, High ESD immunity CKRF40XS0 SPDT, Cost-effective, Lowest Insertion Loss: GHz, small thin package CKRFMM SPDT, Medium power, Insertion Loss: GHz CKRF4XS0 SPT, Cost-effective, Insertion Loss: GHz GaAs RFIC Switches to GHz UPG4TK SPDT for Dual Band WLAN,.-.V control voltage range UPGTN SPDT, Insertion Loss: GHz, Isolation = GHz UPGTN SPDT.4 GHz, Insertion Loss: internal terminations UPG4TK / TX SPDT for Dual Band WLAN, high power, low insertion loss for Access Point applications UPG409TX SPDT for Dual Band WLAN, highest power, low insertion loss for Access Point applications CKRFXS0 SPDT for Dual Band WLAN, cost-effective, Insertion Loss: GHz, small thin package CKRF40XS0 SPT, Insertion Loss: GHz, Isolation = GHz UPG4TN DPDT, Insertion Loss: GHz, db GHz UPGTN DPDT, Insertion Loss: GHz, db GHz 4

6 RF Switch ICs SPDTs (Single Pole Double Throw) Number PLP (GHz, max) UPDTK ICAL ELECTRICAL CHARACTERISTICS (TA = C) Control Voltages +.,./0 Insertion Loss Isolation Input 0. db compression point Input db compression point Pkg. Code 4 GHz + + TK UPG09TB.0 +./0 GHz +4 TB Description Single Control (.-Vdd), small size package, CMOS High power handling, low insertion loss, high isolation UPG0TK.0 +./0 GHz + +0 TK Medium power, small size package UPGTB +./0 GHz + TB UPGTN.0 +.0/0 GHz GHz GHz GHz GHz UPGTN.0 +.0/0 + TN UPG4TB.0 UPG4TK.0 UPG40TK.0 +.,.0/0 +.,.0/0 +.,./0 GHz + GHz + GHz +9 + (.V), (.0V) + (.V), (.0V) + (.V), 0. (.0V) UPG40TB.0 +.0/0 GHz +9 TB UPG40TK.0 +.0/0 GHz +9 TK UPG409TB. +.0/0 UPG409TX.0 +.0/0 UPG4TK.0 +.0/0 UPG4TX.0 +.0/0 UPG4TK.0 CKRFXS0.0 CKRFXS0.0 CKRF40XS0.0 CKRFMM.0 +.,.0/0 +.,.0/0 +.,.0/0 +.,.0/0 +.,.0/0 GHz 0.4@ GHz 0.@GHz GHz GHz GHz GHz GHz, GHz GHz TN TB TK TK +. + TB +4 + TX + +4 TK + + TX -GHz GHz XS0 @ GHz MM High power handling, low harmonics, lowest cost high power switch Highest isolation, great.4 and GHz performance Absorptive, high power and high linearity to GHz Low insertion loss, high isolation, medium power,.v-.v. Small size package, low inseriton loss, high isolation, medium power,.v-.v. Small size package, cost effective medium power,.v-.v Low cost medium power for UHF- GHz Small size package, cost effective medium power Low Cost high power SPDT, for Access Points to.ghz High power, for Access Points to GHz,.mm QFN package High power handling for Access Points to GHz, small size package High power handling for Access Points to GHz,.mm QFN package Low cost GHz SPDT, medium power, small size package, low inseriton loss, high isolation,.v-.v Low Cost, Lowest Insertion Loss, small thin package Low Cost SPDT specified to GHz with a small thin package Low Cost, Lowest Insertion Loss, small thin package Low cost, Low insertion loss, Medium Power SPDT Notes:. Manufactured by Renesas Electronics. Manufactured by CDK (Chou Denshi Kogyo), a longtime manufacturing partner for Renesas Electronics. Contact CEL for production status. See Product Longevity Program details on page 4. See Dimensions on page

7 RF Switch ICs continued SPTs (Single Pole Triple Throw) Number (GHz, max) DPDTs (Double Pole Double Throw) ICAL ELECTRICAL CHARACTERISTICS (TA = C) Control Voltages Insertion Loss Isolation Input db compression point ICAL ELECTRICAL CHARACTERISTICS (TA = C) Input db compression point Code Description CKRF4XS0.0 +.,.0/0 GHz + + XS0 Lowest Cost SPT, Low Insertion Loss CKRF40XS0.0 +.,.0/0 GHz GHz + + XS0 SPT specified to GHz with high isolation Notes:. Manufactured by CDK (Chou Denshi Kogyo), a longtime manufacturing partner for Renesas Electronics. Contact CEL for production status. See Dimensions on page Number PLP (GHz, max) Control Voltages UPG4TN.0 +.0/0 UPGTN.0 +.0/0 Insertion Loss GHz Input db compression point Input db compression point Code UPDTN +./0 GHz + + TN TN TN Description Lowest cost, lowest insertion loss DPDT. GHz operation. Best isolation of all DPDTs, up to GHz operation Only one control pin, low frequency operation, CMOS,.V-.V Notes:. Manufactured by Renesas Electronics. See Product Longevity Program details on page. See Dimensions on page GaAs FETs Low Noise GaAs FETs, to GHz Typical TA = C Gate Number PLP Length (μm) Gate Width (μm) Recommended Range (GHz) Test (GHz) NF/GA Bias VDS IDS NFOPT GA Power Bias VDS IDS PdB Code Description NE0M to 0.. M04 Plastic SMD NE0M to M04 Plastic SMD NE09M to M04 Plastic SMD NEM to M04 Plastic SMD NES to 0.0. S0 Micro-X Plastic NES to 0.. S0 Micro-X Plastic NEM to M04 Plastic SMD NE4S to 0..0 S0 Micro-X Plastic NES to S0 Micro-X Plastic NES to S0 Plastic SMD NES0 0 to 0.. S0 Micro-X Plastic NEM04 to 0. M04 Plastic SMD Notes:. Manufactured by Renesas Electronics. See Product Longevity Program details on page. See Dimensions on page

8 Silicon MOSFET Devices RF Power LD-MOSFETs Typical TC = C POUT Number PLP NE Linear Gain. Freq (GHz) PIN + + Test Conditions VDS.. IDSQ Code Description 4 Plastic SMD NE09A A Plastic SMD NE09A A Plastic SMD NE099A A Plastic SMD NE9A A Plastic SMD Notes:. Manufactured by Renesas Electronics. See Product Longevity Program details on page. See Dimensions on page MOSFET for Microphone Impedance Conversion Supply Number PLP Voltage Circuit Current (μa) Input Capacitance (pf) Voltage Gain Output Noise Voltage (dbv) Total Harmonic Distortion (%) HBM ESD (KV) Code NEM > M Notes:. Manufactured by Renesas Electronics. See Product Longevity Program details on page. See Dimensions on page

9 Silicon Bipolar Transistors Small Signal Silicon Devices NF /GA MAG/MSG TEST f (GHz) VCE ICQ NF GA VCE IC ft (GHz) hfe IC MAX Code Style SOT- NEM04 SC0. 0 M04 SOT-4F NE SC NE0 SC SOT-4 NE0 SC00.9 NE00 SC SOT- NE0 SC..0 0 SOT- NE09 SC SOT-4 SOT-4 Number Equivalent Number NE90 PLP NE SC NE SC00.. NE SC4.. 0 SOT- NE SC. 9 0 SOT- NE SC SOT-4 NE SC0.. 0 SOT-4 NE SC0.. 0 NE SC SOT-4 NE SC NE0 SC SOT- NE SC.4. 0 SOT- NE9 SC SOT-4 NE9 SA SOT- NE9 SA SOT- SA NE SOT- SA NE SOT- SC NE.4. 0 SOT- SC NE. 9 0 SOT- SC NE SOT- SC409 NE SOT-4 SC4094 NE SOT-4 SC409 NE SOT-4 SC4 NE SOT- SC4 NE.. 0 SOT- SC4 NE SOT- SC00 NE SC00 NE.. SC00 NE0.9 SC0 NE.. 0 SC0 NE SOT-4 SC0 NE SOT-4 SC0 NE SOT-4 SC0 NE.. 0 SOT-4 SC0 NEM04. 0 M04 SOT-4F SC0 NE. 4 0 Notes:. Manufactured by Renesas Electronics. See Product Longevity Program details on page. See Dimensions on page

10 Silicon Bipolar Transistors continued Medium Power Transistors Number Equivalent Number PLP TEST f (GHz) VCE PdB MAG / MSG ft ICQ VCE IC (GHz) hfe IC MAX Code NE44 SC SOT-9 NE4M0 SC M0 SOT-9 Style NEM04 SC M04 SOT-4F NE4M04 SC M04 SOT-4F NEM04 SC.. 0 M04 SOT-4F NEM04 SC M04 SOT-4F NE4 SC SOT-9 NEM0 SC M0 SOT-9 SC NE SOT-9 SC4 NE SOT-9 SC NEM M0 SOT-9 SC NE4M M0 SOT-9 SC09 NEM M04 SOT-4F SC NEM M04 SOT-4F SC NEM M04 SOT-4F SC4 NE4M M04 SOT-4F Notes:. Manufactured by Renesas Electronics. See Product Longevity Program details on page. See Dimensions on page Twin Transistors TEST NF/GA Number PLP f VCE (GHz) NF/GA IC NF GA MAG VCE SE IC ft (GHz) hfe IC MAX Die Pkg. Code Style UPA00T.9. each NE0 T SOT- UPA0T each NE T SOT- UPA0T each NE T SOT- UPA0T... 0 each NE T SOT- UPAT each NE T SOT- UPAT.9. each NE0 T SOT- Notes:. Manufactured by Renesas Electronics. See Product Longevity Program details on page. See Dimensions on page 9

11 Silicon RFICs V Silicon MMIC Amplifiers Number PLP Typical db down (MHz) VCC ICC ELECTRICAL CHARACTERISTICS (TA = C) NF Gain RLIN RLOUT PdB ISOL MIN MAX MIN MAX Code Style UPC4TB TB SOT- UPC4TB TB SOT- UPC4TB TB SOT- UPC49TB TB SOT- UPCTB TB SOT- UPCTK TK pin Recessed Lead UPCTK 4 Note TK pin Recessed Lead Notes:. ZL = 0 Ω for all Electrical Characteristics. f = 00 MHz test condition. f = 900 MHz test condition 4. f = 00 MHz test condition MHz with output port matching. Manufactured by Renesas Electronics. See Product Longevity Program details on page. See Dimensions on page V Silicon MMIC Amplifiers Number 4 PLP Typical db down (MHz) VCC ICC ELECTRICAL CHARACTERISTICS (TA = C) NF Gain RLIN RLOUT PdB ISOL MIN MAX MIN MAX Code Style UPCTB TB SOT- UPC9TB TB SOT- UPCTB TB SOT- UPCTB TB SOT- UPC4TB TB SOT- Notes:. ZL = 0 Ω for all Electrical Characteristics. f = 00 MHz test condition. f = 00 MHz test condition 4. Manufactured by Renesas Electronics. See Product Longevity Program details on page. See Dimensions on page Upconverters ELECTRICAL CHARACTERISTICS (TA = C) Number 4 PLP IF Input db Down (MHz) RF Output Range (MHz) VCC ICC Conversion Gain PSAT Noise Figure OIP Code Style UPCTB TB SOT- UPCTB TB SOT- Notes:. PIN = 0 dbm. RF = 900 MHz, LO = 0 MHz, PLO = - dbm. RF = 00 MHz, LO = 0 MHz, PLOIN = - dbm 4. Manufactured by Renesas Electronics. See Product Longevity Program details on page. See Dimensions on page Downconverters ELECTRICAL CHARACTERISTICS (TA = C) Number PLP RF Input db Down (MHz) IF Output db Down (MHz) VCC ICC Conversion Gain PSAT Noise Figure Test Condition (Note) Code 4 Style UPCTB TB SOT- UPCTB TB SOT- UPCTB TB SOT- UPCTB TB SOT- Note:. AGC Amp and Mixer Block only. Manufactured by Renesas Electronics. See Product Longevity Program details on page 4. See Dimensions on page

12 Dimensions Units in mm These dimensions are for the package only. For detailed dimensions including leads, please refer to the datasheet. (. x x 0.9) (0. x. x 0.) 0 (. x x 0.9) (. x.9 x.4) 4 ( x 4. x.) 9 (. x.9 x.) 9A (4. x 4.4 x 0.9) M0 (.4 x 4. x.) Bottom View M04 (. x x 0.) M ( x. x 0.) S0 / S0 (. x. x.) T / TB / MM (. x x 0.9) TK (. x. x 0.) TN / TN (. x. x 0.) TX (. x. x 0.) XS0 (. x. x 0.) Bottom View Bottom View Bottom View Bottom View XS0 ( x x 0.) Bottom View

13 Product Longevity Program Program Overview California Eastern Laboratories, Inc. is pleased to announce the Product Longevity Program to our customers purchasing Renesas Electronics products. The parts selected for participation in this program are planned to have a long production life cycle. Planned Life Cycle for PLP Products 4 PLP ( Until July 4 ) [ supply is maintained ] Usual Management (January onwards) [ supply period is determined by demand and other factors ] Program Details. Products participating in this program are expected to have a long product life.. A list of the products participating in this program is provided via the link below.. The products in this program are clearly identified with the PLP icon. 4. Due to various circumstances, in some cases a PLP product may be replaced by an equivalent product that is also in the PLP.. PCN (Product Change Notices) for changes in product specifications, manufacturing facilities, or materials may be issued due to circumstances beyond our control even while this program is in effect.. The date of PLP termination is the date that was planned at the point in time when it was officially announced. It is subject to change. For complete PLP List and up to date information Please visit us at:

14 CEL Headquarters 490 Patrick Henry Drive Santa Clara, CA 904 Tel: (40) Learn more For a complete list of sales offices, representatives and distributors, Please visit our website: California Eastern Laboratories 04.