A low-power, high-speed, 9-channel germaniumsilicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer

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1 A low-power, high-speed, 9-channel germaniumsilicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer A. V. Krishnamoorthy, 1* X. Zheng, 1 D. Feng, 3 J. Lexau, 2 J. F. Buckwalter, 1 H. D. Thacker, 1 F. Liu, 2 Y. Luo, 1 E. Chang, 2 P. Amberg, 1 I. Shubin, 1 S. S. Djordjevic, 1 J. H. Lee, 1 S. Lin, 1 H. Liang, 3 A. Abed, 3 R. Shafiiha, 3 K. Raj, 1 R. Ho, 2 M. Asghari, 3 and J. E. Cunningham 1 1 Oracle Netra Systems & Networking, San Diego CA 92121, USA 2 Oracle Labs, Redwood Shores, CA USA 3 Mellanox Technologies, 2630 Corporate Place, Monterey Park, CA USA * ashok.krishnamoorthy@oracle.com Abstract: We demonstrate the first germanium-silicon C-band electroabsorption based waveguide modulator array and echelle-grating-based silicon wavelength multiplexer integrated with a digital CMOS driver circuit. A 9-channel, 10Gbps SiGe electro-absorption wavelengthmultiplexed modulator array consumed a power of 5.8mW per channel while being modulated at 10.25Gbps by 40nm CMOS drivers delivering peak-to-peak voltage swings of 2V, achieving a modulation energyefficiency of ~570fJ/bit including drivers. Performance up to 25Gbps on a single-channel SiGe modulator and CMOS driver is also reported Optical Society of America OCIS codes: ( ) Optical interconnects; ( ) Waveguide modulators; ( ) Photonic integrated circuits. References and links 1. A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, Progress in low-power switched optical interconnects, IEEE J. Sel. Top. Quantum Electron. 17(2), (2011). 2. M. Asghari and A. V. Krishnamoorthy, Energy-efficient communication, Nat. Photonics 5(5), (2011). 3. J. F. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, Waveguideintegrated, ultralow-energy GeSi electro-absorption modulators, Nat. Photonics 2(7), (2008). 4. A. E.-J. Lim, T.-Y. Liow, F. Qing, N. Duan, L. Ding, M. Yu, G.-Q. Lo, and D.-L. Kwong, Novel evanescentcoupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector, Opt. Express 19(6), (2011). 5. P. Chaisakul, D. Marris-Morini, M. S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, X. Le Roux, S. Edmond, J. R. Coudevylle, and L. Vivien, 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator, Opt. Express 20(3), (2012). 6. N. N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, 30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide, Opt. Express 19(8), (2011). 7. D. Feng, S. Liao, H. Liang, J. Fong, B. Bijlani, R. Shafiiha, B. J. Luff, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide, Opt. Express 20(20), (2012). 8. D. Feng, W. Qian, H. Liang, C.-C. Kung, Z. Zhou, Z. Li, J. Levy, R. Shafiiha, J. Fong, B. J. Luff, and M. Asghari, High-speed GeSi electro-absorption modulator on the SOI waveguide platform, IEEE J. Sel. Top. Quantum Electron. 19(6), (2013). 9. G. Li, A. V. Krishnamoorthy, I. Shubin, J. Yao, Y. Luo, H. Thacker, X. Zheng, K. Raj, and J. E. Cunningham, Ring resonator modulators in silicon for interchip photonic links, IEEE J. Sel. Top. Quantum Electron. 19(6), (2013). (C) 2014 OSA 19 May 2014 Vol. 22, No. 10 DOI: /OE OPTICS EXPRESS 12289

2 10. F. Liu, D. Patil, J. Lexau, P. Amberg, M. Dayringer, J. Gainsley, H. Moghadam, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, E. Alon, and R. Ho, 10Gbps, 5.3mW optical transceiver circuits in 40nm CMOS, in Proceedings of IEEE Symp. VLSI Circuits (Institute of Electrical and Electronics Engineers, Honolulu, HI, 2011), pp A. V. Krishnamoorthy, A. L. Lentine, K. W. Goossen, J. A. Walker, T. K. Woodward, J. E. Ford, G. F. Aplin, L. A. D Asaro, S. P. Hui, R. Leibenguth, D. Kossives, D. Dahringer, L. M. F. Chirovsky, and D. A. B. Miller, 3-D integration of MQW modulators over submicron CMOS circuits: 375Mb/s transimpedancereceiver-transmitter circuit, IEEE Photon. Technol. Lett. 7(11), (1995). 12. J. F. Buckwalter, X. Zheng, G. Li, K. Raj, and A. V. Krishnamoorthy, A Monolithic 25-Gb/s Transceiver With Photonic Ring Modulators and Ge Detectors in a 130-nm CMOS SOI Process, IEEE J. Solid-State Circuits 47(6), (2012). 1. Introduction The gradual adoption of optical interconnects into computing and switching systems over the last decade has paved the way for new photonic technologies to be incorporated into the computing system hierarchy. We will soon witness ubiquitous incorporation of optical interconnect technologies at the board, backplane, and rack level server systems at 25Gbps and beyond [1]. Parallel silicon-based photonic links will naturally replace other optical solutions for applications that require a combination of high-speed, high-density, and tight integration to VLSI application specific integrated circuits including switches, processors, gate arrays, and memory modules. Both WDM and multi-core fiber techniques are being investigated for further density improvements, and it is possible that one or both of these technologies will ultimately see wide-spread use in commercial systems. Regardless of the multiplexing method, it is critical to achieve low-power, high-density silicon transmitters and associated receivers to support the ever-growing bandwidth demand to bandwidth-hungry chips including switches, processors, and field-programmable gate arrays. A germanium-silicon (GeSi) Franz-Keldysh Effect (FKE) electro-absorption (EA) waveguide modulator is expected to become an integral part of a high-speed energy-efficient multi-wavelength interconnect platform [2]. In earlier work, GeSi EA modulators were originally designed and operated with sub-micron-thick silicon-on-insulator (SOI) waveguides [3 5], and subsequently fabricated with an optimized 3-micron-thick, large-core SOI waveguides in the L-band [6] and C-band [7] wavelength ranges. A 4-channel modulator array based on this platform was recently reported in [8]. In this letter, we present a compact, broad-band 9-channel 10Gbps/channel GeSi waveguide modulator array with a monolithically integrated echelle-based wavelength multiplexer hybrid integrated to a lowpower CMOS driver circuit designed in a 40nm CMOS process. We also present a singlechannel GeSi FKE modulator with CMOS driver at 25Gbps. Fig. 1. (a) Insertion loss and extinction ratio vs wavelength and reverse-bias voltages (b) total equivalent modulator link power penalty showing that a bandwidth of 30nm obtained at approx. 9.5dB total penalty. (C) 2014 OSA 19 May 2014 Vol. 22, No. 10 DOI: /OE OPTICS EXPRESS 12290

3 2. Multi-wavelength modulators and multiplexers The GeSi EA modulator array based on the FKE is fully integrated with 3µm thick rib waveguides on a high-resistivity SOI substrate with an operational wavelength in the C-band. The insertion loss and extinction ratio of an FKE modulator versus reverse-bias voltage is shown in Fig. 1(a). The equivalent modulator link power penalty [9] is plotted in Fig. 1(b). With an applied peak-to-peak swing of 2V, each modulator in the array has an operating wavelength range in excess of 30nm for a modulator optical power penalty of ~10dB. Assuming the total modulator power penalty should be controlled to within a fixed range (e.g. <10dB for 30nm), the working wavelength range can, to an extent, be traded for a working temperature range. The rate of the band edge shift is ~0.8nm/ C [7]. Consequently, the insertion loss and extinction ratio curves in Fig. 1(a) shift to longer wavelengths, but no modulation performance degradation is observed. Hence, we can use this modulator at elevated temperatures without closed-loop temperature control (see Section 3). Practical limits to temperature excursions potentially arise due to fiber-to-chip packaging and the WDM mux/demux - which moves only at ~0.1nm/ C. For instance, as temperature ranges across 40 C, the band edge will shift ~32nm while the operating wavelength (to align with the mux) will likewise shift ~4nm to keep total modulator penalty below 10dB. Figures 2(a) and 2(b) show the device before and after integration with the VLSI circuit. Each device has a size of approximately 20µm 40µm, including contacts. Each modulator is electrically isolated and has two 15µm 15µm flip-chip pads to connect to the driver circuit. Edge-coupled waveguides (one per modulator) provide external laser input (Fig. 2(c)). The EA modulator array is monolithically integrated with an echelle-grating-based multiplexer to achieve a 9-channel WDM transmitter chip with one output waveguide. The area of the echelle grating (bounding box) is approx. 1.7mm 2.6mm. Two additional waveguides are used for optical alignment and one additional input port not attached to a driver is used to test the echelle multiplexer. The WDM transmitter assembly (Figs. 2(d) and 2(e)) has a footprint of ~5mm 14mm and an aggregate bandwidth of over 100 Gbps when operated at its maximum speed of 12Gbps per channel. The clocked driver array circuit was fabricated in a 40nm TSMC CMOS process and is based on a pulsed cascode-design [10]. An external clock at half the data rate is provided to the CMOS driver chip. Each driver cell incorporates a level-shifter to create a 1-2V swing that is complemented to a 0-1V swing to create an effective 2V peak-to-peak modulation signal followed by the final cascaded driver. Each modulator driver cell has a size of approximately 15µm x 15µm and additionally incorporates two 15µm x 15µm pads with a center-to-center spacing of ~48µm to connect to the corresponding modulator. The combined minimum footprint of a modulator plus associated driver circuit was approximately 30µm 100µm. Although not done in this case, the circuits can be placed underneath the flip-chip pads for 3-D photonics-on-cmos integration [11] to achieve even higher density. Small-signal measurements were performed on a representative device on an unpackaged chip to measure the electro-optic response of the FKE modulators (Fig. 3(a)) at bias voltages of 0V, 1V, and 2V. At zero bias, the modulator bandwidth was 20GHz. At a reverse-bias voltage between 1V and 2V, a 3dB bandwidth in excess of 40GHz was measured. To model the device, s 11 parameter measurements were taken, and a circuit model made (Fig. 3(b)). With the circuit diagram and extracted parasitics, excellent fitting was obtained at all voltages. The extracted values (Table in Fig. 3(c)) indicate a modulator device capacitance (junction plus parasitic) of ~50fF at 1V. The substrate capacitance does not significantly affect device performance because of the high-resistivity SOI substrate. (C) 2014 OSA 19 May 2014 Vol. 22, No. 10 DOI: /OE OPTICS EXPRESS 12291

4 Fig. 2. (a) GeSi modulator micrograph; (b) infrared micrograph of the modulator array after bonding to CMOS chip showing flip-chip pads and I/O waveguides; (c) Micrograph of the 3µm GeSi EA WDM modulator array (face-up) integrated with the 40nm TSMC driver chip (face-down); (d) Schematic of the driver chip integrated to the 3-micron silicon-on-insulator chip containing the Si/Ge FKE electro-absorption modulators array and the echelle multiplexer; (e) After fiber attach on packaged system test board. Fig. 3. (a) Small-signal bandwidth of the GeSi FKE modulator (b) equivalent circuit based on S11 measurements and parameter fitting (c) Table of extracted values of junction, parasitic, and substrate capacitance and series resistance. 3. WDM transmitter array testing The CMOS-FKE EA WDM transmitter assembly is packaged into a fixture that provides heat spreading, mechanical stability, and support for edge-coupled fiber attach (Fig. 2(e)). Figure 4 shows the transmission of the unpackaged 10-channel modulator with echelle mux normalized to the fiber-coupling loss. This is a representation of the loss and non-uniformity (C) 2014 OSA 19 May 2014 Vol. 22, No. 10 DOI: /OE OPTICS EXPRESS 12292

5 of the array before fiber-coupling and packaging. The non-uniformity is primarily due to the modulator array insertion loss variation across the wavelength range (~1.8dB) and variation due to echelle mux and wafer non-uniformity ( 1dB). Ten channels separated by ~200GHz spacing (~1.6nm) were provisioned, of which nine channels around 1535nm were connected to modulator devices. The fiber-attached array is mounted on a custom printed circuit board and wire-bonded for power and control. The chip-assembly was thermally-imaged (Fig. 5(a)) and a temperature scan (Fig. 5(b)) shows that the temperature of the VLSI chip and attached photonic chip rises 7-8 C, relatively uniformly across the entire photonic array. Further, the actual modulator temperature rises about 2 C above the VLSI chip temperature. Given that this effect is predictable, the Si-Ge FK band edge and mux can be engineered and optimized for operation at this elevated temperature. Fig. 4. Transmission of an unpackaged 10-channel modulator + multiplexer array chip normalized to fiber coupling loss; Worst-case isolation is >20dB on adjacent channels spaced at 100GHz. The transmitter assembly was tested at speed. On-chip PRBS generators created digital electrical signals which were applied to each modulator by its respective driver circuit. Figure 5(c) shows the optical eye when one channel is driven at the maximum data-rate of 12Gbps supported by the VLSI chip with 4dBm of input optical power. The measured output extinction ratio is ~4.3dB. Optical and electrical crosstalk between channels is negligible. As shown in Fig. 6, nine channels of the parallel WDM transmitter were simultaneously modulated at 10.25Gbps with open eyes with extinction ratios ranging from 4dB to 5.5dB. The power dissipation per channel is measured by enabling a modulator channel and measuring the on-chip power. A power dissipation of 5.82mW per channel is measured at the bit-rate of 10.25Gbps which takes into account the dynamic power consumed by the driver + modulator (~1.5mW) the absorbed photo-current power of the EA device (~1.5mW) as well as leakage current power, which was significant in this case (~2.5mW). The corresponding modulator energy per bit is ~570fJ/bit including driver circuit at an average photo-current of 0.7mA. We expect this can be reduced to ~300fJ/bit or below with device improvements. The small channel footprint, wide bandwidth, and low capacitance of the GeSi EA modulator and driver array enable a compelling, low-power, high-density silicon-photonic WDM transmitter solution. By scaling the modulator transmitter chip with more channels and operating the silicon driver chip at higher bitrates with 25Gbps and faster driver circuits, we anticipate a potential transceiver array with a total bandwidth on the order of up to 10Tbps (C) 2014 OSA 19 May 2014 Vol. 22, No. 10 DOI: /OE OPTICS EXPRESS 12293

6 and a power dissipation in the range of 10-20W for ubiquitous photonic communication applications. Fig. 5. (a) Thermal profile of flip-chip assembly when powered ON. Powered modulator array can be seen as a vertical column on the left. (b) Scan of temperature across the assembly showing a temperature difference of ~10 C with peak temperature at EA modulator. (b) Eye diagram of a channel running at 12Gbps with on-chip PRBS data generator. Fig. 6. Test of the integrated multi-wavelength transmitter showing simultaneous modulation on all nine channels at 10.25Gbps. Center wavelength was 1532nm and separation between channels was 1.6nm We also tested a single-channel CMOS-FKE EA modulator with driver circuits at 25Gbps to evaluate transmitter performance with higher-speed drivers for packaging into a 100Gbps transceiver. The high-speed drivers were based on push-pull (inverter) amplifiers integrated in 130nm CMOS SOI and are similar to the circuits reported previously [12]. The output driver stage is illustrated in Fig. 7 and consists of a pair of push-pull drivers that are driven with complementary data signals. Additionally, the two data signals are level-shifted with respect to ground to allow complementary voltage swing across the p-n junction which does not forward bias the junction but also avoids exceeding the voltage swing limitations of the CMOS devices. The size of the push-pull driver transistors is related to the capacitance of the FK modulator and, therefore, can be directly related to the power consumption of the driver circuits. Figure 8 shows the transmitter eye at 25Gbps when integrated with the 130nm CMOS high-speed driver. In this experiment, the driver die was located adjacent the FKE EA modulator and wire-bonded with low-inductance ribbon bonds. The capacitance of the (C) 2014 OSA 19 May 2014 Vol. 22, No. 10 DOI: /OE OPTICS EXPRESS 12294

7 bondpads on the driver and the modulator can be incorporated into a broadband pi-network with a bandwidth of more than 20GHz. Excluding the off-chip laser power, the transmitter consumed below 70mW per channel (2.8pJ/bit) at 25Gbps including the 25Gbps electrical I/O circuit. This power can be reduced with flip-chip integration of the modulator chip onto the driver die. Fig. 7. Schematic of the 130nm CMOS SOI driver stage. Two push-pull driver stages control the swing across the p-n junction. Fig. 8. Test of a single-channel version of the FK transmitter driven by a 130nm CMOS driver at 25Gbps/lane package: optical output eye at 25Gbps. Acknowledgments The authors gratefully acknowledge Dr. Guoliang Li for RF measurements, Chaoqi Zhang for thermal simulation, Dr. J. Mitchell and C. Stephen of Oracle Labs and J. Malinge formerly of Kotura Inc. for their support of this project. This work was supported in part by DARPA under Agreement HR under the supervision of Dr. J. Shah. The view expressed are those of the authors and do not reflect the official policy of the Dept. of Defense or the U. S. government. Approved for public release; distribution unlimited. (C) 2014 OSA 19 May 2014 Vol. 22, No. 10 DOI: /OE OPTICS EXPRESS 12295