DC-6GHz Reflective SPDT. GaAs Monolithic Microwave IC in SMD leadless package

Size: px
Start display at page:

Download "DC-6GHz Reflective SPDT. GaAs Monolithic Microwave IC in SMD leadless package"

Transcription

1 Description GaAs Monolithic Microwave IC in SMD leadless package The CHS5104-FAA is a monolithic FET based reflective switch housed in leadless surface mount hermetic metal ceramic 6x6mm² package. It is designed for a wide range of applications, from space and military to commercial communication systems. The circuit is manufactured with a phemt process, 0.25µm gate length. It is supplied in RoHS compliant SMD package. Main Features Broadband performance: DC-6GHz Low insertion loss: Isolation: Input P1dB: 30dBm Main Electrical Characteristics Tamb.= +25 C Vh=0V/VL=-5V Symbol Parameter Min Typ Max Unit Freq Frequency range DC 6 GHz IL On state insertion loss 1.3 db ISOL Off state isolation 30 db RL On state return loss 10 db IP1dB Input gain compression 30 dbm Ref. : DSCHS5104-FAA Feb 18 1/16 Specifications subject to change without notice United Monolithic Semiconductors S.A.S.

2 Electrical Characteristics (1) Tamb.= +25 C, specifications are given for 50Ω source and load impedances. Symbol Parameter Condition Min Typ Max Unit Freq Frequency range DC 6 GHz IL On state insertion loss (1) DC - 2GHz DC - 4GHz DC - 6GHz ISOL Off state isolation DC - 2GHz DC - 4GHz DC - 6GHz RL On state input and output return losses DC - 2GHz DC - 4GHz DC - 6GHz VH Control voltage high level VL Control voltage low level -8-5 V IP1dB Input gain Freq. 0.5GHz dbm compression. VL=-5V/VH=0V VL=-8V/VH=0V Ton / Toff Switching time 50% control to 10 ns 90% RF, and 50% control to 10% RF Ic Current consumption on the control supply voltage µa Freq. 0.5GHz Pin 33dBm VH= 0V VL=-5V VL=-8V (1) These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Reference planes of on-board measurements are defined in the paragraph S-parameters reference planes (2) Variation rate of insertion loss with temperature in the range -40 C to +125 C: dB/ C db db db SPDT truth table PAD A PAD B Electrical path RFC to RF1 VH VL ON OFF VL VH OFF ON Electrical path RFC to RF2 Ref. : DSCHS5104-FAA Feb 18 2/16 Specifications subject to change without notice

3 CHS5104-FAA Absolute Maximum Ratings (1) Tamb.= +25 C Symbol Parameter Values Unit VH High level control voltage 0.8 V VL Low level control voltage -10 ma Pin Maximum peak input power overdrive 37 dbm Tj Maximum Junction temperature 175 C (1) Operation of this device above anyone of these parameters may cause permanent damage. Temperature Range Ta Operating temperature range -55 to +125 C Tstg Storage temperature range -55 to +150 C Ref. : DSCHS5104-FAA Feb 18 3/16 Specifications subject to change without notice

4 Device thermal performances All the figures given in this section are obtained assuming that the FAA device is only cooled down by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase). The system maximum temperature must be adjusted in order to guarantee that Tjunction remains below the maximum value specified in the Absolute Maximum Ratings table. So, the system PCB must be designed to comply with this requirement. Parameter RTH (1) Thermal Resistance ( Junction to Case) Biasing conditions VH= 0V/VL=-5V Pdiss= 2.1W Tjunction ( C) RTH ( C/W) T50 ( hours) E+05 (1) Assuming 85 C Tcase Note: when SPDT operates in linear mode Pdiss can be neglected and Tj=Tcase Ref. : DSCHS5104-FAA Feb 18 4/16 Specifications subject to change without notice

5 CHS5104-FAA Typical Package Sij parameters Tamb.= +25 C, A=0V, B=-5V, on-state RFC-RF1 path Freq (GHz) S11 (db) PhS11 ( ) S21 (db) PhS21 ( ) S12 (db) PhS12 ( ) S22 (db) PhS22 ( ) Ref. : DSCHS5104-FAA Feb 18 5/16 Specifications subject to change without notice

6 Typical Package Sij parameters Tamb.= +25 C, A=-5V, B=0V, off-state RFC-RF1 path Freq (GHz) S11 (db) PhS11 ( ) S21 (db) PhS21 ( ) S12 (db) PhS12 ( ) S22 (db) PhS22 ( ) Ref. : DSCHS5104-FAA Feb 18 6/16 Specifications subject to change without notice

7 CHS5104-FAA Typical Board Measurements Tamb.= +25 C, VH=0V / VL=-5V ON state RFC-RF1 path : S21 versus Frequency (A=0V, B=-5V) ON state RFC-RF1 path : S11 and S22 versus Frequency (A=0V, B=-5V) Ref. : DSCHS5104-FAA Feb 18 7/16 Specifications subject to change without notice

8 Typical Board Measurements Tamb.= +25 C, VH=0V / VL=-5V OFF state RFC-RF1 path : S21 versus Frequency (A=-5V, B=0V) Ref. : DSCHS5104-FAA Feb 18 8/16 Specifications subject to change without notice

9 CHS5104-FAA Typical Board Measurements Tamb.= +25 C, VH=0V / VL=-5V Note: board losses are corrected Insertion Loss RFC-RF1 path versus input power (A=0V/B=-5V) Input power at 1dB Insertion Loss compression (RFC-RF1 path) versus frequency (A=0V/B=-5V) Ref. : DSCHS5104-FAA Feb 18 9/16 Specifications subject to change without notice

10 Typical Board Measurements Tamb.= +25 C, VH=0V / VL=-8V Note: board losses are corrected Insertion Loss RFC-RF1 path versus input power (A=0V/B=-8V) Ref. : DSCHS5104-FAA Feb 18 10/16 Specifications subject to change without notice

11 CHS5104-FAA Package outline Units : mm 1- GND (2) 8- RF1 15- GND (2) 21- GND 2- NC 9- GND (2) 16- NC 3- RFC 10- A 17- GND (2) 4- NC 11- GND (2) 18- NC 5- GND (2) 12- NC 19- RFC 6- NC 13- GND 20- NC 7- GND (2) 14- RF1 (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN0024 ( for exact package dimensions. (2) It is strongly recommended to ground all pins marked GND through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : DSCHS5104-FAA Feb 18 11/16 Specifications subject to change without notice

12 Definition of the Sij reference planes The reference planes used for Sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). The input and outputs reference planes are located at 3.39mm offset (input wise or output wise respectively) from these axis. Then, the given Sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "Evaluation mother board". Package Information Parameter Package body material Lead finish Hermetic sealing (fine leak compliant Mil-Std-883 Method Condition A4, tracer gas He at 1atm) Value RoHS-compliant Gold 1x10-8 cche/s/atm Ref. : DSCHS5104-FAA Feb 18 12/16 Specifications subject to change without notice

13 CHS5104-FAA Evaluation board description Compatible with the proposed footprint. Based on typically Ro4003 / 8mils or equivalent. Using a micro-strip to coplanar transition to access the package. Recommended for the implementation of this product on a module board. Recommendation on decoupling Label Type Decoupling Comment A, B Control Not required SPDT switch pad control voltage RFC, RF1, RF2 RF access External DC block must be used to ensure DC decoupling The MMIC is DC coupled Ref. : DSCHS5104-FAA Feb 18 13/16 Specifications subject to change without notice

14 DC Schematic Ref. : DSCHS5104-FAA Feb 18 14/16 Specifications subject to change without notice

15 CHS5104-FAA Notes Ref. : DSCHS5104-FAA Feb 18 15/16 Specifications subject to change without notice

16 Recommended package footprint for FAA Package Refer to the application note AN0024 available at for package foot print recommendations and exact package dimensions. SMD mounting procedure for FAA Package For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0024 available at Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N 2011/65 and REACh N 1907/2006. More environmental data are available in the application note AN0019 also available at Recommended ESD management Refer to the application note AN0020 available at for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information FAA package: CHS5104-FAA/XY Waffle pack: XY = 24 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHS5104-FAA Feb 18 16/16 Specifications subject to change without notice

17-24GHz Medium Power Amplifier. GaAs Monolithic Microwave IC

17-24GHz Medium Power Amplifier. GaAs Monolithic Microwave IC Description GaAs Monolithic Microwave IC The is a four stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit

More information

7-12 GHz LNA. GaAs Monolithic Microwave IC in SMD leadless package

7-12 GHz LNA. GaAs Monolithic Microwave IC in SMD leadless package S21, input & output return losses (db) NF (db) CHA2110-QDG GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2110-QDG is a monolithic twostages wide band low noise amplifier. It is

More information

CHA3565-QAG RoHS COMPLIANT

CHA3565-QAG RoHS COMPLIANT Sij & NF (db) RoHS COMPLIANT Description GaAs Monolithic Microwave IC in SMD leadless package The is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications,

More information

5-21GHz Driver Amplifier. GaAs Monolithic Microwave IC in SMD leadless package

5-21GHz Driver Amplifier. GaAs Monolithic Microwave IC in SMD leadless package Description GaAs Monolithic Microwave IC in SMD leadless package The CHA3664-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from

More information

2-4GHz Driver. GaAs Monolithic Microwave IC in SMD leadless package

2-4GHz Driver. GaAs Monolithic Microwave IC in SMD leadless package RoHS COMPLIANT GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4105-QDG is a monolithic twostage driver amplifier delivering 24dBm output power @ 1dB gain compression in the range

More information

GHz Packaged HPA. GaAs Monolithic Microwave IC in SMD leadless package. Output power (dbm)

GHz Packaged HPA. GaAs Monolithic Microwave IC in SMD leadless package. Output power (dbm) Output power (dbm) G Description GaAs Monolithic Microwave IC in SMD leadless package The is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a

More information

16-32GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD package

16-32GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD package Linear Gain Description GaAs Monolithic Microwave IC in SMD package The is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard phemt process:

More information

36-44GHz Variable Attenuator. GaAs Monolithic Microwave IC GND GND RF IN GND GND dbs21 (db)

36-44GHz Variable Attenuator. GaAs Monolithic Microwave IC GND GND RF IN GND GND dbs21 (db) dbs21 V1 V2 GaAs Monolithic Microwave IC Description The is a monolithic 36-44GHz Variable Voltage Attenuator. 24 23 22 21 2 19 It is designed for a wide range of applications, from military to commercial

More information

20-25GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. S21(dB)

20-25GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. S21(dB) S21(dB) GaAs Monolithic Microwave IC in SMD leadless package Description The is a K-band low noise amplifier providing 26dB gain with a noise figure of 2.5dB from a single bias supply +5V. The circuit

More information

GHz Power Amplifier. GaAs Monolithic Microwave IC in SMD leadless package

GHz Power Amplifier. GaAs Monolithic Microwave IC in SMD leadless package GaAs Monolithic Microwave IC in SMD leadless package Description The is a four stage monolithic GaAs high power amplifier producing 1 Watt output power. It is highly linear, with possible gain control

More information

L-Band 6-Bit Digital Phase Shifter. GaAs Monolithic Microwave IC in SMD leadless package

L-Band 6-Bit Digital Phase Shifter. GaAs Monolithic Microwave IC in SMD leadless package A3667A A3688A A3667A A3688A A3667A A3688A A3688A A3667A A3667A A3688A L-Band 6- Digital Phase Shifter GaAs Monolithic Microwave IC in SMD leadless package Description is an L-Band (1.2,1.4GHz) monolithic

More information

Advanced Information: AI1712. L-Band Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD Ceramic Hermetic package

Advanced Information: AI1712. L-Band Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD Ceramic Hermetic package : GaAs Monolithic Microwave IC in SMD Ceramic Hermetic package UMS develops an L-Band LNA monolithic circuit including an active bias network. In addition, a protection network is included in order to

More information

GHz Integrated Down converter. GaAs Monolithic Microwave IC in SMD leadless package

GHz Integrated Down converter. GaAs Monolithic Microwave IC in SMD leadless package Description GaAs Monolithic Microwave IC in SMD leadless package The CHR3693-FAA is a down-convertor in leadless surface mount hermetic metal ceramic 6x6mm² package. It integrates a balanced cold FET mixer,

More information

GHz Frequency Multiplier. GaAs Monolithic Microwave IC. Output power (dbm)

GHz Frequency Multiplier. GaAs Monolithic Microwave IC. Output power (dbm) Output power (dbm) GaAs Monolithic Microwave IC Description UMS develops a packaged monolithic time three multiplier which integrates input and output buffer. This circuit is a very versatile multiplier

More information

CHA3694-QDG RoHS COMPLIANT

CHA3694-QDG RoHS COMPLIANT RoHS COMPLIANT GaAs Monolithic Microwave IC in SMD package Description The CHA3694-QDG is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, typically

More information

5.5-9GHz Integrated Down Converter. GaAs Monolithic Microwave IC in SMD leadless package

5.5-9GHz Integrated Down Converter. GaAs Monolithic Microwave IC in SMD leadless package CHR7-QDG Description.-9GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD leadless package The CHR7-QDG is a multifunction monolithic receiver, which integrates a balanced cold FET mixer,

More information

CHA2069-QDG RoHS COMPLIANT

CHA2069-QDG RoHS COMPLIANT CHA69-QDG RoHS COMPLIANT 18-3GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA69-QDG is a three-stage self-biased wide band monolithic low noise amplifier.

More information

GHz Power Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. Pout (dbm)

GHz Power Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. Pout (dbm) Pout (dbm) PAE at 1dB comp. ( %) YYWWG A3667A A3688A UMS YWWG A3667A A3688A UMS CHA6552-QJG Description GaAs Monolithic Microwave IC in SMD leadless package The CHA6552-QJG is a three stage monolithic

More information

23-26GHz Reflective SP4T Switch. GaAs Monolithic Microwave IC in SMD leadless package

23-26GHz Reflective SP4T Switch. GaAs Monolithic Microwave IC in SMD leadless package GaAs Monolithic Microwave IC in SMD leadless package Description The CHS2412-QDG is a monolithic reflective SP4T switch in K-Band. The CHS2412-QDG is a dual source to the CHS2411-QDG: same electrical performances,

More information

CHR3364-QEG RoHS COMPLIANT

CHR3364-QEG RoHS COMPLIANT Noise Figure (db) RoHS COMPLIANT Description 17-GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD leadless package The is a multifunction monolithic receiver, which integrates a balanced

More information

CHR3662-QDG RoHS COMPLIANT

CHR3662-QDG RoHS COMPLIANT Conversion Gain (db) CHR3-QDG RoHS COMPLIANT 7-1GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD package Description The CHR3-QDG is a multifunction part, which integrates a balanced cold

More information

DC-6GHz 6-BIT DIGITAL ATTENUATOR. GaAs Monolithic Microwave IC in SMD leadless package

DC-6GHz 6-BIT DIGITAL ATTENUATOR. GaAs Monolithic Microwave IC in SMD leadless package RoHS COMPLIANT GaAs Monolithic Microwave IC in SMD leadless package Description The CHT4012-QDG is a DC-6GHz monolithic 6-bit digital attenuator with a LSB = 0.5dB offering a high dynamic range and a high

More information

0.5-20GHz Driver. GaAs Monolithic Microwave IC

0.5-20GHz Driver. GaAs Monolithic Microwave IC Gain, NF / P1dB, Pout WWG A3667A A3688A UMS 667A 688A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Driver Amplifier that operates between 0.5 and 20GHz. It is designed for a wide

More information

CHA3664-QAG RoHS COMPLIANT

CHA3664-QAG RoHS COMPLIANT CHA3664-QAG RoHS COMPLIANT Description GaAs Monolithic Microwave IC in SMD leadless package A3667A A3688A YYWWG The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier.

More information

Advanced Information: AI GHz Medium Power Amplifier. GaAs Monolithic Microwave IC

Advanced Information: AI GHz Medium Power Amplifier. GaAs Monolithic Microwave IC : AI1805 GaAs Monolithic Microwave IC UMS develops a packaged monolithic medium power amplifier delivering 23.5dBm output power at 1dB compression point, associated with 24dB of linear gain from 17 to

More information

X-band Medium Power Amplifier. GaAs Monolithic Microwave IC

X-band Medium Power Amplifier. GaAs Monolithic Microwave IC RoHS COMPLIANT GaAs Monolithic Microwave IC Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power

More information

2-22GHz LNA with AGC. GaAs Monolithic Microwave IC

2-22GHz LNA with AGC. GaAs Monolithic Microwave IC Linear gain, Return Losses (db) WWG A3667A A3688A UMS 67A 88A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) that operates

More information

CHR3352-QEG RoHS COMPLIANT

CHR3352-QEG RoHS COMPLIANT Conversion Gain (db) CHR-QEG RoHS COMPLIANT Description -GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD leadless package The CHR-QEG is a multifunction monolithic circuit, which integrates

More information

Advanced Information: AI GHz Low Noise Amplifier. GaAs Monolithic Microwave IC

Advanced Information: AI GHz Low Noise Amplifier. GaAs Monolithic Microwave IC : AI1801 GaAs Monolithic Microwave IC UMS has developed a two-stage self-biased wide band monolithic Low Noise Amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package. It operates from

More information

CHX3068-QDG RoHS COMPLIANT

CHX3068-QDG RoHS COMPLIANT CHX3068-QDG RoHS COMPLIANT GaAs Monolithic Microwave IC in SMD leadless package Description The CHX3068-QDG is a Ka-band frequency multiplier monolithic integrated circuit. Typical applications are for

More information

CHR3362-QEG RoHS COMPLIANT

CHR3362-QEG RoHS COMPLIANT Conversion Gain (db) CHR33-QEG RoHS COMPLIANT 1-1GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD leadless package Description The CHR33-QEG is a multifunction monolithic circuit, which

More information

7-11GHz Low Noise Amplifier. GaAs Monolithic Microwave IC

7-11GHz Low Noise Amplifier. GaAs Monolithic Microwave IC CHA1010-99F GaAs Monolithic Microwave IC Description The CHA1010-99F is a monolithic two-stage wide-band low noise amplifier. It is designed for a wide range of applications, from professional to commercial

More information

CHV2411aQDG RoHS COMPLIANT

CHV2411aQDG RoHS COMPLIANT RoHS COMPLIANT Fully Integrated HBT K-band VCO GaAs Monolithic Microwave IC in QFN package Description The CHV2411aQDG is a monolithic multifunction for frequency generation. It integrates an X-band push-push

More information

Advanced Information: AI GHz Voltage Variable Attenuator. GaAs Monolithic Microwave IC in SMD package

Advanced Information: AI GHz Voltage Variable Attenuator. GaAs Monolithic Microwave IC in SMD package : AI1706 GaAs Monolithic Microwave IC in SMD package UMS develops a Voltage Variable Attenuator (VVA) in leadless surface mount hermetic metal ceramic 6x6mm² package, which operates from 5 to 30GHz. This

More information

CHR3664-QEG RoHS COMPLIANT

CHR3664-QEG RoHS COMPLIANT Conversion Gain (db) RoHS COMPLIANT GaAs Monolithic Microwave IC in SMD leadless package Description The is a multifunction monolithic circuit, which integrates a balanced cold FET mixer, a multiplier

More information

7-12GHz LNA. GaAs Monolithic Microwave IC. S21 (db)

7-12GHz LNA. GaAs Monolithic Microwave IC. S21 (db) S21 (db) NF (db) GaAs Monolithic Microwave IC Description The is a monolithic two-stages wide band low noise amplifier circuit. It is self-biased. It is designed for military, space and telecommunication

More information

4-16GHz 6-bit digital attenuator. GaAs Monolithic Microwave IC

4-16GHz 6-bit digital attenuator. GaAs Monolithic Microwave IC Description The is a 4-16GHz 6-bit digital attenuator designed to address a dynamic of 31.5dB by 0.5dB step. It is designed for a wide range of applications, from military to commercial communication systems.

More information

80-105GHz Balanced Low Noise Amplifier. GaAs Monolithic Microwave IC. Gain & NF (db)

80-105GHz Balanced Low Noise Amplifier. GaAs Monolithic Microwave IC. Gain & NF (db) Gain & NF (db) GaAs Monolithic Microwave IC Description The is a broadband, balanced, four-stage monolithic low noise amplifier. It is designed for Millimeter-Wave Imaging applications and can be use in

More information

CHX2090-QDG RoHS COMPLIANT

CHX2090-QDG RoHS COMPLIANT RoHS COMPLIANT Description GaAs Monolithic Microwave IC in SMD leadless package The CHX2090-QDG is a cascadable frequency doubler monolithic circuit, which integrate an output buffer amplifier that produces

More information

14-42GHz Integrated Frequency Multiplier

14-42GHz Integrated Frequency Multiplier V- V+ Advance Information: AI1024 14-42GHz Integrated Frequency Multiplier GaAs Monolithic Microwave IC 24 23 22 21 20 19 1 18 2 17 3 16 RF IN 4 X3 15 RF OUT 5 14 6 13 7 8 9 10 11 12 UMS develops a packaged

More information

DC-35GHz 4 Bit Digital Attenuator. GaAs Monolithic Microwave IC

DC-35GHz 4 Bit Digital Attenuator. GaAs Monolithic Microwave IC Description The CHT3029-99F is a very wide band digital attenuator, which integrates 4 bits with a LSB of 1dB and provides a dynamic range of 15dB from DC to 35GHz. It is designed for a wide range of applications,

More information

Advanced Information: AI1714. DC-14GHz Voltage Variable Attenuator. GaAs Monolithic Microwave IC

Advanced Information: AI1714. DC-14GHz Voltage Variable Attenuator. GaAs Monolithic Microwave IC AI1714 : AI1714 GaAs Monolithic Microwave IC UMS develops a Voltage Variable Attenuator (VVA) in leadless surface mount hermetic metal ceramic 6x6mm² package, which operates from DC to 14GHz. This device,

More information

L-Band 6-Bit Digital Phase Shifter. GaAs Monolithic Microwave IC

L-Band 6-Bit Digital Phase Shifter. GaAs Monolithic Microwave IC CHP3010a98F Description L-Band 6- Digital Phase Shifter CHP3010a98F is an L-Band (1.2, 1.4GHz) monolithic 6-bit digital phase-shifter with a 0-360 range and a high phase accuracy. The typical RMS phase

More information

36-44GHz Variable Attenuator. GaAs Monolithic Microwave IC RF_IN dbs21 (db)

36-44GHz Variable Attenuator. GaAs Monolithic Microwave IC RF_IN dbs21 (db) dbs21 GaAs Monolithic Microwave IC Description The is a monolithic 36-44GHz Variable Voltage Attenuator. It is designed for a wide range of applications, from military to commercial communication systems.

More information

17-26GHz Medium Power Amplifier. GaAs Monolithic Microwave IC

17-26GHz Medium Power Amplifier. GaAs Monolithic Microwave IC Description The CHA5050-99F is a four stage monolithic MPA that provides typically 25.5dBm of output power associated to 20% of power added efficiency at 3dB gain compression. It is designed for a wide

More information

18W X-Band High Power Amplifier. GaN Monolithic Microwave IC

18W X-Band High Power Amplifier. GaN Monolithic Microwave IC CHA8611-99F GaN Monolithic Microwave IC Description V+ The CHA8611-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 18W of saturated output power and 43%

More information

5W X Band Medium Power Amplifier. GaN Monolithic Microwave IC

5W X Band Medium Power Amplifier. GaN Monolithic Microwave IC GaN Monolithic Microwave IC Description V+ The CHA6710-99F is a two stage Medium Power Amplifier operating between 8.0 and 12.75GHz. It typically provides 5W of saturated output power and 36% of power

More information

2-22GHz LNA with AGC. GaAs Monolithic Microwave IC. Performance (db)

2-22GHz LNA with AGC. GaAs Monolithic Microwave IC. Performance (db) Performance (db) GaAs Monolithic Microwave IC Description The is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22GHz. It is designed for a wide range

More information

71-86GHz Low Noise Amplifier. GaAs Monolithic Microwave IC

71-86GHz Low Noise Amplifier. GaAs Monolithic Microwave IC Associated Gain & NF (db) CHA28-98F GaAs Monolithic Microwave IC Description The CHA28-98F is a Low Noise Amplifier with variable gain. This circuit integrates four stages and provides 3.5dB Noise Figure

More information

C Band High Power Amplifier. GaAs Monolithic Microwave IC

C Band High Power Amplifier. GaAs Monolithic Microwave IC GaAs Monolithic Microwave IC Description is a monolithic two-stage GaAs High Power Amplifier (HPA) designed for C band applications. The HPA provides typically 12W of output power on the 5.2 to 6.0GHz

More information

0.5-20GHz Driver. GaAs Monolithic Microwave IC

0.5-20GHz Driver. GaAs Monolithic Microwave IC CHA422-98F.-2GHz Driver GaAs Monolithic Microwave IC Description The CHA422-98F is a distributed driver amplifier which operates between. and 2GHz. It is designed for a wide range of applications, such

More information

CHA2159 RoHS COMPLIANT

CHA2159 RoHS COMPLIANT RoHS COMPLIANT 55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of

More information

Low Phase Noise C band HBT VCO. GaAs Monolithic Microwave IC

Low Phase Noise C band HBT VCO. GaAs Monolithic Microwave IC Frequency (GHz) GaAs Monolithic Microwave IC Description The is a low phase noise C band HBT voltage controlled oscillator that integrates negative resistor, varactors and buffer amplifiers. It provides

More information

CHT4016 RoHS COMPLIANT

CHT4016 RoHS COMPLIANT RoHS COMPLIANT 4-16GHz 6-BIT DIGITAL ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4016 is a 4-16GHz 6-bit digital attenuator designed to address a dynamic of 31.5dB by 0.5dB step. This device

More information

15W Power Packaged Transistor. GaN HEMT on SiC

15W Power Packaged Transistor. GaN HEMT on SiC Gain (db), Pout (dbm) & PAE (%) Drain Current (A) CHK15A-QIA Description The CHK15A-QIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband

More information

CHA F RoHS COMPLIANT

CHA F RoHS COMPLIANT Pout (dbm) & PAE(%) & Gain(dB) RoHS COMPLIANT GaAs Monolithic Microwave IC Description The is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically

More information

CHA5294 RoHS COMPLIANT

CHA5294 RoHS COMPLIANT 30-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC CHA5294 RoHS COMPLIANT Description The CHA5294 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range

More information

DC-40GHz ATTENUATOR. GaAs Monolithic Microwave IC. Insertion Loss ( db )

DC-40GHz ATTENUATOR. GaAs Monolithic Microwave IC. Insertion Loss ( db ) Insertion Loss ( ) Description The is a variable DC-40GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The chip backside is both RF and DC grounds.

More information

71-86GHz Down-converter. GaAs Monolithic Microwave IC GLO DLO DRF GRF

71-86GHz Down-converter. GaAs Monolithic Microwave IC GLO DLO DRF GRF Conversion Gain (db) GaAs Monolithic Microwave IC Description The is a multifunction monolithic receiver, which integrates a balanced sub-harmonic cold FET mixer, a LO buffer, and a RF low noise amplifier.

More information

CHR2294 RoHS COMPLIANT

CHR2294 RoHS COMPLIANT RoHS COMPLIANT 2-3GHz Single Side Band Mixer Self biased GaAs Monolithic Microwave IC Description The CHR2294 is a multifunction chip (MFC) which integrates a self biased LO buffer amplifier and a sub-harmonically

More information

CHA3093c RoHS COMPLIANT

CHA3093c RoHS COMPLIANT CHA3093c RoHS COMPLIANT 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a

More information

W-Band Dual Channel Transmitter/Receiver. GaAs Monolithic Microwave IC. IFa_Lc (db)

W-Band Dual Channel Transmitter/Receiver. GaAs Monolithic Microwave IC. IFa_Lc (db) IFa_Lc (db) GaAs Monolithic Microwave IC Description The is a dual channel self-biased transmitter/receiver. One RF port used for reception and one for both emission and reception. This product is designed

More information

W-band Mixer. GaAs Monolithic Microwave IC

W-band Mixer. GaAs Monolithic Microwave IC W-band Mixer GaAs Monolithic Microwave IC Description The CHM2179b98F is a monolithic single channel mixer, which integrates high quality Schottky diodes that produces low conversion loss and very low

More information

CHA3511 RoHS COMPLIANT

CHA3511 RoHS COMPLIANT RoHS COMPLIANT 6-18GHz Amplifier GaAs Monolithic Microwave IC Description The CHA3511 is composed of a Single Pole Single Through (SPST) switch followed by a double stage travelling wave amplifier. It

More information

CHA2293 RoHS COMPLIANT

CHA2293 RoHS COMPLIANT RoHS COMPLIANT 24-30GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2293 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed

More information

CHA2090 RoHS COMPLIANT

CHA2090 RoHS COMPLIANT CHA9 RoHS COMPLIANT 17-GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA9 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with

More information

CHA2095a RoHS COMPLIANT

CHA2095a RoHS COMPLIANT CHA295a RoHS COMPLIANT 36-4GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA295a is a four-stage monolithic low noise amplifier. It is designed for a wide range of

More information

CHA F RoHS COMPLIANT

CHA F RoHS COMPLIANT RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier

More information

CHA2395 RoHS COMPLIANT

CHA2395 RoHS COMPLIANT RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA239 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications,

More information

CHR2295 RoHS COMPLIANT

CHR2295 RoHS COMPLIANT (db) RoHS COMPLIANT 24-30GHz Integrated Down Converter GaAs Monolithic Microwave IC Description LO The is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and

More information

55-65GHz Single Side Band Mixer. GaAs Monolithic Microwave IC

55-65GHz Single Side Band Mixer. GaAs Monolithic Microwave IC 55-65GHz Single Side Band Mixer GaAs Monolithic Microwave IC Description The CHM1298 is a multifunction chip (MFC) which integrates a LO buffer amplifier and a sub-harmonically balanced diode mixer for

More information

Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V

Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V v.7 HMCLC Typical Applications The HMCLC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional

More information

25W Power Packaged Transistor. GaN HEMT on SiC

25W Power Packaged Transistor. GaN HEMT on SiC 25W Power Packaged Transistor GaN HEMT on SiC Description The is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety

More information

40W Power Packaged Transistor. GaN HEMT on SiC

40W Power Packaged Transistor. GaN HEMT on SiC Gain (db), Pout (dbm) & PAE (%) Id (A) Description 40W Power Packaged Transistor The is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband

More information

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units. DC - 20 GHz 2

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units. DC - 20 GHz 2 Typical Applications The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation Functional Diagram Features

More information

X Band Driver Amplifier. GaAs Monolithic Microwave IC

X Band Driver Amplifier. GaAs Monolithic Microwave IC GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including

More information

Features. = +25 C, Vdd 1, 2, 3 = +3V

Features. = +25 C, Vdd 1, 2, 3 = +3V v.11 HMC6LC AMPLIFIER, 6-2 GHz Typical Applications The HMC6LC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military

More information

CHA2093 RoHS COMPLIANT

CHA2093 RoHS COMPLIANT CHA93 RoHS COMPLIANT -3GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description Vd The CHA93 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard

More information

CHA2098b RoHS COMPLIANT

CHA2098b RoHS COMPLIANT CHA98b RoHS COMPLIANT -4GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC Description Vd1 Vd2,3 The CHA98b is a high gain broadband threestage monolithic buffer amplifier. It is designed for

More information

CHA2194 RoHS COMPLIANT

CHA2194 RoHS COMPLIANT RoHS COMPLIANT 3-GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 3GHz to GHz

More information

Features = +5V. = +25 C, Vdd 1. = Vdd 2

Features = +5V. = +25 C, Vdd 1. = Vdd 2 v7.11 HMC1LC3 POWER AMPLIFIER, - GHz Typical Applications The HMC1LC3 is ideal for use as a medium power amplifier for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO

More information

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units Typical Applications The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation Functional Diagram Features

More information

CHR2291 RoHS COMPLIANT

CHR2291 RoHS COMPLIANT (db) RoHS COMPLIANT GaAs Monolithic Microwave IC Description LO The is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide

More information

High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G

High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G Data Sheet High Isolation, Nonreflective, GaAs, SPDT Switch,1 MHz to 4 GHz FEATURES Nonreflective, 5 Ω design High isolation: 57 db to 2 GHz Low insertion loss:.9 db to 2 GHz High input linearity 1 db

More information

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma* v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use

More information

10 W, Failsafe, GaAs, SPDT Switch 0.2 GHz to 2.7 GHz HMC546LP2E

10 W, Failsafe, GaAs, SPDT Switch 0.2 GHz to 2.7 GHz HMC546LP2E FEATURES High input P.dB: 4 dbm Tx Low insertion loss:.4 db High input IP3: 67 dbm Positive control: V low control; 3 V to 8 V high control Failsafe operation: Tx is on when no dc power is applied APPLICATIONS

More information

CHR F RoHS COMPLIANT

CHR F RoHS COMPLIANT RoHS COMPLIANT 21-26.5GHz Integrated Down GaAs Monolithic Microwave IC Description LO The CHR3693-99F is a multifunction chip, which integrates a balanced cold FET mixer, a time two multiplier, and a RF

More information

5.5 GHz to 14 GHz, GaAs MMIC Fundamental Mixer HMC558A. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION

5.5 GHz to 14 GHz, GaAs MMIC Fundamental Mixer HMC558A. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION FEATURES Conversion loss: 7.5 db typical at 5.5 GHz to 1 GHz Local oscillator (LO) to radio frequency (RF) isolation: 45 db typical at 5.5 GHz to 1 GHz LO to intermediate frequency (IF) isolation: 45 db

More information

CHX2092a RoHS COMPLIANT

CHX2092a RoHS COMPLIANT RoHS COMPLIANT -40GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2092a is a cascadable by 4 frequency multiplier monolithic circuit. It is designed for a wide range of applications,

More information

10 GHz to 20 GHz, GaAs, MMIC, Double Balanced Mixer HMC554ALC3B

10 GHz to 20 GHz, GaAs, MMIC, Double Balanced Mixer HMC554ALC3B Data Sheet FEATURES Conversion loss: 8. db LO to RF Isolation: 37 db Input IP3: 2 dbm RoHS compliant, 2.9 mm 2.9 mm, 12-terminal LCC package APPLICATIONS Microwave and very small aperture terminal (VSAT)

More information

6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773ALC3B

6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773ALC3B FEATURES Conversion loss: 9 db typical Local oscillator (LO) to radio frequency (RF) isolation: 37 db typical LO to intermediate frequency (IF) isolation: 37 db typical RF to IF isolation: db typical Input

More information

4 GHz to 8.5 GHz, GaAs, MMIC, I/Q Mixer HMC525ALC4

4 GHz to 8.5 GHz, GaAs, MMIC, I/Q Mixer HMC525ALC4 Data Sheet FEATURES Passive: no dc bias required Conversion loss: 8 db (typical) Input IP3: 2 dbm (typical) LO to RF isolation: 47 db (typical) IF frequency range: dc to 3. GHz RoHS compliant, 24-terminal,

More information

Advance Information: AI1016. QFN Packaged 10-16GHz Direct Modulator. GaAs Monolithic Microwave IC GND QB Q VG I VD3 VD2 VD1

Advance Information: AI1016. QFN Packaged 10-16GHz Direct Modulator. GaAs Monolithic Microwave IC GND QB Q VG I VD3 VD2 VD1 VD1 VD2 VD3 QB Q VG I IB Advance Information: AI1016 QFN Packaged 10-16GHz Direct Modulator GaAs Monolithic Microwave IC 32 31 30 29 28 27 26 25 1 24 2 23 3 22 RF IN 4 21 5 20 6 19 LO IN 7 18 8 17 9 10

More information

Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]

Features. = +25 C, Vdd = +4V, Idd = 90 ma [2] v.91 HMCLCB AMPLIFIER, 1-27 GHz Typical Applications This HMCLCB is ideal for: Features Noise Figure: 2.2 db @ 2 GHz Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation

More information

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units Typical Applications Features The HMC232ALP4E is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military Radios, Radar & ECM Test Instrumentation Functional Diagram Isolation: 57 @ 3 GHz 50 @

More information

HMC629ALP4E. 3 db LSB GaAs MMIC 4-BIT DIGITAL ATTENUATOR, DC - 10GHz. Typical Applications. Functional Diagram. General Description

HMC629ALP4E. 3 db LSB GaAs MMIC 4-BIT DIGITAL ATTENUATOR, DC - 10GHz. Typical Applications. Functional Diagram. General Description v1.716 DIGITAL ATTENUATOR, DC - 1GHz Typical Applications The is ideal for: Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors IF & RF Applications Functional

More information

Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.

Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15. v.6.5 LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,. - 33 GHz Typical Applications Features The is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications

More information

0.1 GHz to 18 GHz, GaAs SP4T Switch HMC641A

0.1 GHz to 18 GHz, GaAs SP4T Switch HMC641A Data Sheet 0. GHz to 8 GHz, GaAs SP4T Switch FEATURES Broadband frequency range: 0. GHz to 8 GHz Nonreflective 50 Ω design Low insertion loss: 2. db to 2 GHz High isolation: 42 db to 2 GHz High input linearity

More information

CHA7215 RoHS COMPLIANT

CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC CHA7215 RoHS COMPLIANT Description The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides

More information

GaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A

GaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A FEATURES Conversion loss: db LO to RF isolation: db LO to IF isolation: 3 db Input third-order intercept (IP3): 1 dbm Input second-order intercept (IP2): dbm LO port return loss: dbm RF port return loss:

More information