Keywords: Amplifier, Linearization, IMD3 Suppression, Adaptive Source Harmonic Termination
|
|
- Ashlyn Merry Taylor
- 5 years ago
- Views:
Transcription
1 The Institution of Engineering & Technology Hong Kong Younger Members Exhibition & Conference 2010 Power Amplifier Linearization by Source Harmonic Termination Optimization WANG, Dian City University of Hong Kong, ABSTRACT Nowadays, different methods with non-constant envelop signal are implemented to meet limited channel bandwidth. As a consequence, the final stage of power amplifier must behave linearly over the whole dynamic range with desirable efficiency. Traditional methods based on 3rd order intermodulation distortion (IMD3) sweet spot use biasing adaption. However, they are limited by narrow dynamic range and might fail at higher output power level. In this paper IMD3 sweet spot was studied. Biasing and harmonic termination effects on sweet spot were investigated. A novel adaptive source termination was proposed. ADS simulation, which uses a single state BJT amplifier working at 2.4GHz, has shown more than 20dB improvement for IMD3 at peak output power with a wider dynamic range. In the two tone test experiment, the same amplifier with 12.86dB gain was used. Its IMD3 can be well controlled below -44dBm throughout the whole output dynamic range by optimizing source harmonic termination at each input power level. Comparing with adaptive biasing method, 45dB improvement can be achieved at peak power. In addition, less than -50dBc adjacent channel power ratio (ACPR) over the whole dynamic range was got from two tone excitation. Under -40dBc and -50dBc ACPR requirement, boosted upper dynamic range with enhanced efficiency was realized in comparison with adaptive biasing method. The result demonstrated good linearity and dynamic range. With those desired features and simple design, the method, thus, is applicable. Keywords: Amplifier, Linearization, IMD3 Suppression, Adaptive Source Harmonic Termination 1. INTRODUCTION With the continuing growth of modern wireless communication, high spectrum efficiency is critical for transmission of data within the limited channel bandwidth. Different methods with non-constant envelop signal, such as OFDM and QAM, are implemented to improve the channel capacity. As a consequence, the final stage of power amplifier in a communication system must behave linearly over the whole dynamic range including the peak power condition. On the other hand, as power amplifiers consume a significant portion of battery power, higher power-added efficiency (PAE) is another crucial factor to be considered for a longer operationtime. However, this high efficiency is usually achieved near saturation operation which has high distortion level. It is desirable to push power amplifier to high compression region with large linearity distortion. Thus many researches focus on how to improve linearity at high output power region. Traditional methods applied for linearization are either complex (e.g. feed-forward [1]-[3], digital pre-distortion [4]) or limited in their performance (e.g. analog pre-distortion [5]-[6]). Due to the special physical characteristic of transistors and the networking, an unexpected IMD minimum, which referred as sweet spot, may appear in
2 IMD pattern. This small and large signal IMD minimum has already been discovered and studied for years [7]- [8]. Different methods have also been proposed to utilize dynamic range and sweet spot control. Biasing control is one of the efficient methods to improve IMD and many techniques based on it have already been proposed[9]. However, this method is inevitably limited by harmonic termination conditions [7]. Studies on harmonic termination are much tougher and its detail effects are still unclear. However, it is known that the baseband and second harmonic termination have more essential influence. Thus, we extended our research to dynamic IMD3 sweet spot control by source harmonic terminations and designed a compact structure which can provide with the tuneable source termination. 2. SWEET SPORT CONTROL BY HARMONIC TERMINATION Discussed by Nuno Borges de Carvalho and Jos e Carlos Pedro[7], different amplifier classes result in different IMD3 patterns and some are with or without sweet spot. Harmonic termination seems to have strong impact on the sweet spot and IMD3 pattern. Sometime it directly influences the presence of sweet spot. As studied by previous researchers, both baseband signal and second harmonic termination impedance are important. In the following different terminations are discussed with given simulation results using a power amplifier based on BFP 450 transistor. The following figures provide with different IMD3 patterns under different source harmonic terminations. Fig.1. (a) Source baseband termination and sweet spot. (b) Harmonic termination control on IMD3 sweet spot. In Fig.1 (a) evidently, an open source baseband termination gives no sweet spot. On the contrary, the shot source baseband termination leads to an IMD3 pattern with sweet spot. Apart from the baseband termination, 2 nd harmonic termination (Z S/L_2nd ) is also studied with the following conditions listed in the table. Condition Z S BB (Ω) Z S 2nd (Ω) Z L BB (Ω) A 0-22j 0 B j 0 C j 0 Table. 1. Source Hermonic Termination conditions. The simulation results were plotted in Fig.1 (b). It is found that the harmonic termination demonstrates both dynamic control with regard to P in and optimization on the sweet spot. This phenomenon provides us a very useful direction for IMD3 suppression and linearization. This paper, which is based on discoveries discussed above, only focuses on source harmonic terminations.
3 3. DESIGN AND SIMULATION 3.1 Adaptive harmonic termination design The following figures show how the adaptive source harmonic termination is designed. Fig.2. (a) Source adaptive harmonic termination design. (b) Equivalent circuits at different frequency. In Fig.2 (a), the λ/4 short circuit transmission line at fundamental frequency is used for 2 nd harmonic termination while varactor diode is used for tuning. Fundamental signal can fully pass through the resonator. Since the source, which biases variactor diode also presents an impendence, it is connected to the λ/4 line which acts like a RF choke at fundamental frequency and a short circuit for DC. The resistor is chosen to be large which can be traded as an open circuit at high frequency. Thanks to these two configurations, the biasing network for variactor diode will only be effective at DC and has no influencing on the high frequency signals. Fig.2 (b) demonstrates the equivalent circuit at different frequencies where f o represents fundamental frequency. At fundamental frequency, if the resonance frequency is perfectly located, merely a lossless line is seen. However, in reality, no prefect component exists and the resonance frequency may shift a bit. In fact, the bandwidth for this resonator is very wide, thus frequency shift may not cause a problem. At 2 nd harmonic frequency, both diode path and resonator path are important. The limiting capacitor acts a very important part as for tuning rage controlling. Typically, the reversed biased varactor diode has merely 0.1pA current. A 1kΩ resistor will only have 1nV voltage drop which can definitely be ignored. In this sense, the DC biasing is directly applied to the diode and hence can control its capacitance. It should also be pointed out that there is hardly any DC power consumption on this tuneable part which is also desirable. 3.2 Simulation The following figure shows simulation result on how the adaptive termination can be tuned by tuning the variactor s biasing. Both Fig.3 (a) and (b) are obtained when the varactor is series with a 0.7pF capacitor. However, Fig.3 (b) was simulated by using non-ideal components: muratas. Obviously, the tuning range has been shifted. More seriously, for non-ideal simulation, it is found that the fundamental termination wanders around 50Ω which is not desirable. It is this effect which causes the mismatch and thus will leading to the drop of gain. According to simulation a worst 1.8dB mismatching loss can result. With this comparison, it is clear that the limiting capacitors are very important. In real circuit, the tuning range can be shifted and with much difference as simulation and different temperature and conditions also cause unpredictable errors. Limiting capacitors, thus, should be selected practically for optimizing the range and compensating these differences.
4 Fig.3. Source harmonic termination tuning (a) with ideal components (b) with non-ideal component. The following is a simple testing amplifier circuit using BFP 640 transistor and 1SV277 varactor diode (the basic experimental circuit structure is also this one). The fundamental frequency is set to be 2.4GHz for Bluetooth and Wi-Fi applications. Fig.4. Adaptive source harmonic termination power amplifier schematic. Based on the circuit given above, simulation was carried out. In the simulation a circuit without source adaptive harmonic termination was used for reference. The simulation was carried out by two tone test under 2.4GHz with 200KHz tone spacing. Notice that two different circuits are simulated in the same biasing condition. It is also worth to mention that the gain for this amplifier in the simulation is around 18.8dB and the 1 db compression point P in1db =-5.5dBm. The output power saturates around 15.8dBm. Because our objective is to focus on high output power region where compression is high while efficiency is high, P in =5dBm was selected in simulation for optimization where the gain compression is about -8.4dB and the output power is 15.4dBm. As Fig.5 (a) implies, not much improvement can be achieved by tuning the bias in this region. This has already been discussed by previous researchers [9]. Fig.5. (a) Biasing tuning and IMD3 at P in =5dBm. (b) Harmonic termination tuning and IMD3 at P in =5dBm.
5 Different capacitance values were used for the varactor diode and their resulted IMD3 patterns are plotted below against the reference design in Fig.6 (a). Fig.6. (a) Different IMD3 patterns for different C Vara. (b)simulation result of IMD3 suppression at high output level using adaptive source harmonic termination. It is not hard to found that as the capacitance of the varactor increases, the sweet spot shifts toward right to a high output power level which demonstrated good improvement at high output power level. If the termination is adaptively tuned the result in Fig.12 (b) can be got. More than 20dB improvement has been achieved at high output power level with a relatively wider dynamic range. The simulation result demonstrated that harmonic termination can be used for linearization at high output power level where adaptive biasing can hardly get any improvement. 4. EXPERIMENT AND DISCUSSION With simulation and discussion in last section, it is known that the circuit can be very sensitive to components and environment. The experiment result may also be different from simulation. Thus simulation results only give directions of operations but not accurate prediction of performance. For the experimental circuit demonstrated in Fig.7, different limiting capacitors were tried, and finally a suitable series capacitor (1.2pF) was found. It should also be remarked here that cables and connections in the experiment results in 0.5dB loss which has not been added to the experiment result. This is because the loss is linear which will not cause differences in IMD3 and output power pattern. However this loss does affect the efficiency. So it is included in efficiency calculations. Again, all the following experiments were done under two tone excitation at 2.4GHz center frequency with tone spacing of 200KHz. It is also important to mention that in the experiment, focus was on IMD3 performance. No matching and load-pull network were included. Thus, the gain and saturation power are relatively low but have no adverse influence on demonstration the proposed method. Fig.7. Adaptive source harmonic termination power amplifier circuits.
6 In the following, the experimental results from adaptive source harmonic termination are comparing with adaptive biasing method [9] unless otherwise stated. The figure below shows the spectra under two tone excitation at peak output power of 13dBm (10dBm each tone) where the amplifier was almost saturate. Fig.8. Spectruaat peak output power. It can be seen that adaptive source harmonic termination method can knock down IMD3 power to less than -50dBm while adaptive biasing method hardly has any suppression. The improvement at peak power is as high as 45dB which is quite desirable. Nevertheless, this improvement is meaningless unless a linearity requirement is set which will be discussed later in this section. From the spectra, it can be seen that the other two sideband which referred as IMD5 hasn t been suppressed. This is mainly due to the single adaptive harmonic termination. It is hard to achieve both IMDs suppression with a single adaptive termination. IMD5 suppression by adaptive termination will be studied in future work. The continuous IMD3 pattern presented below shows how adaptive source harmonic termination can provide sweet spot control at high output level. Fig.9. IMD3 suppression by adaptive source harmonic termination. In Fig.9 it is clear that more than 20dB IMD3 suppression was achieved which is quite desirable at high input power. This experimental result confirmed that the prediction that harmonic termination control can push the sweet spot to higher input power level. At lower input level the performance of adaptive harmonic termination is not as good as adaptive biasing, but still within a relatively small value which is less than -40dBm. For both methods, the output power can reach as high as 13dBm. However, as predicted in simulation in high power region, the gain of adaptive harmonic termination method is less than reference which is basically due to the
7 mismatching at fundamental frequency. The following figure shows the gain and how the varactor voltage should be tuned with respect to input power. Gain (db) Gain(Adaptive harmonic Z S ) Gain(Adaptive biasing) V Vara (Adaptive harmonic Z S ) P in (dbm) Fig.10. Gain and varactor voltage for adaptive source harmonic termination. In lower P in level the gain of the two methods are approximately the same. However, starting from P in =-4dBm they start to deviate from each other. But also note that the voltage biasing for the varactor diode before P in =- 6dBm is high where the capacitance as well as the series resistor are low. But this small resistance may not lead to such a gain drop. From simulation (Fig.3) it can be seen that the fundamental is well matched when V Vara is high. However, as the voltage of the varactor diode drops, the fundamental matching firstly shifts away and then back. It results a maximum 1.8dB mismatching loss. Although this is only simulation result which may not give exact prediction, it is still a valid explanation for the gain difference. Suffering from this mismatch factor, when the voltage drops from 7V to 1V, the gain of the amplifier with adaptive source harmonic termination is approximately 1.6dB lower than reference. Before further comparing, it is also worth to look at DC power consumption for both cases Voltage (V) DC power (mw) 44 DC power (adaptive harmonic Z S ) DC power (adaptive biasing ) P in (dbm) Fig.11. DC power consumption comparison. When P in is larger than -4dBm, DC power consumed by adaptive biasing method is essentially larger than adaptive source harmonic termination method. That is to say, after this point, adaptive biased power amplifier can handle more power. This is also the reason that its gain suffers less compression in Fig.10. For this reason, it is not fair to compare their PAE which involves gain and power handling. Nevertheless, efficiency, which only depends on output power and DC power, is of more interest. When linearity requirement is set, the improvement is clearer. Currently, 3G mobile device requires -33dBc ACPR while base stations have tighter ACPR restrictions around lower than -40dBc. However, for future
8 signals, even tighter restrictions will be set. Thus -40dBc and -50dBc ACPR standards are used for discussion below. Fig.12. ACPR versus power efficiency. In the above figure a conventional power amplifier with merely one sweet spot, which was biased approximately the same as adaptive source harmonic termination, is also presented for reference. Clearly enough, the proposed method provides with the whole dynamic range under both requirements. Thus, the peak efficiency can be utilized. Conventional method and adaptive biasing method may have comparable or even better efficiency at high output power level, but at this high efficiency output power level, the linearity does not meet the requirement. The solution is to backup output power to work in a relatively low region. The upper dynamic range reduces, which causes dramatically drop on efficiency. According to the figure, the upper dynamic range and efficiency for different restrictions are summarized in the following table. Upper dynamic Linearity requirement Method applied Peak efficiency range (dbm) Conventional % Lower than Adaptive biasing % -40dBc ACPR Adaptive source harmonic % Lower than -50dBc ACPR Lower than -40dBc ACPR termination Conventional % Adaptive biasing % Adaptive source harmonic termination % Table. 2. Comparison on upper dynamic range and peak efficiency. Peak efficiency in the table is referred as the highest efficiency under upper dynamic range. Table.2 clearly demonstrates the improvement of adaptive source harmonic termination. Under -50dBc ACPR requirement, it boosts the upper dynamic range to almost twice that of the adaptive biasing method. At the same time, 27% improvement from adaptive biasing method is achieved in efficiency. In additional, in today s mobile device application (such as Wi-Fi, Bluetooth, and mobile phone), where non-constant output power is needed, average power efficiency is more meaningful. Listed in Table.3 adaptive source harmonic termination method demonstrates 10% improvement on average power efficiency in comparison with adaptive biasing method. Linearity requirement Method applied average power efficiency Conventional 16.3% Adaptive biasing 26.7% Adaptive source harmonic termination 36.4% Table.3. Comparison on average power efficiency.
9 5. APPLICATION For hand-set applications where linearity restriction is relatively low, our method can proved improved average power efficiency and boosted upper dynamic range. In future communication systems like 3G or 4G, this allows devices to sustain for longer time and to be capable for high peak to average signal which has higher transmission rate. For base station or highly reliable communication systems, having higher ACPR restriction, the method can provide with enhanced upper dynamic range with peak efficiency. This is critically important for sustainable development and green system. Moreover, due to the simplicity of this method, it can also be applied together with other linearization methods to further enhance performance, such as combining both adaptive biasing and harmonic termination method for a higher gain and efficiency. 6. CONCLUSION Within this paper, a power amplifier with adaptive source harmonic termination was designed. Adaptive biasing method shows good control on IMD3 sweet spot when input level is relatively low. However, this method is limited by its performance and has little control on the sweet spot in high output power range. Thus, adaptive source harmonic termination was designed and applied. Simulation results demonstrated the effect of this method. In the experiment, the proposed method has -45dB IMD3 suppression at saturation output power when compared with adaptive biasing method. Moreover, under -40 and -50dBc ACPR requirement, the efficiency was improved by 19.7% and 27%, respectively. The upper dynamic range is also boosted from 11.1dBm and 10dBm, respectively, to 13dBm. Through discussion and results, we have demonstrated a novel linearization method with simple and compact design. 6. REFERENCE [1] Jing, D., Chan, W.S., Li, S.M. and Li, C.W New linearization method using interstage second harmonic enhancement. IEEE Microwave Guided Wave Lett., vol. 8, pp [2] Kang, S.G., Lee, I..K. and Yoo, K.S Analysis and design of feedforward power amplifier. IEEE MTT- S Int. Microwave Symp. Dig., pp [3] Hau, Y.K.G., Postoyalko, V. and Richardson, J.R Design and characteristics of a microwave feedforward amplifier with improved wide-band distortion cancellation. IEEE Trans. Microwave Theory Tech., vol. 49, pp [4] Kim, J. and Konstantinou, K Digital predistortion of wideband signals based on power amplifier model with memory Electron. Lett., Volume 37, Issue 23, p [5] Hau, G., Nishimura, T. and Iwata, N A highly efficient linearized wide-band CDMA handset power amplifier based on predistortion under various bias conditions. IEEE Trans. Microwave Theory Tech., vol. 49, pp [6] Yu, C.S., Chan, W.S. and Chan, W.L GHz low loss varactor diode pre-distorter. Electron Lett., vol. 35, no. 20, pp [7] Nuno Borges de Carvalho and Jos e Carlos Pedro, Large- and small-signal IMD behavior of microwave power amplifiers. IEEE Transactions on Microwave Theory and Techniques, vol. 47, no. 12. [8] Teeter, D.A., East, J.R. and Haddad, G.I Use of self bias to improve power saturation and intermodulation distortion in CW Class B HBT operation. IEEE Microwave and Guided Wave Letters, vol. 2, no. 5, pp [9] Lau, K.W Self-adaptive biasing technique: linearity and efficiency improvements for microwave power amplifiers. PhD Thesis. City University of Hong Kong.
10 [10] Cripps, Steve C RF power amplifiers for wireless communications. Second Edition. Canton Street, Norwood, MA. [11] Novis, S.R. and Pelletier, L IMD parameters describe LDMOS device performance. Microwaves RF, vol. 37, no. 7, pp ACKNOWLEDGEMENT Here I would like to express my sincerest gratitude to those people who have helped me in this project. First and foremost, I would like to thank my supervisor, Prof. Chi-Hou Chan and Dr. Xue, Quan for their continuous guidance and support. In addition, I owe my heartfelt thanks to Prof. Franke in University of Illinois at Urbana- Champaign. I d also like to thank Roy and King for their support in simulation software and experiment.
Highly Linear GaN Class AB Power Amplifier Design
1 Highly Linear GaN Class AB Power Amplifier Design Pedro Miguel Cabral, José Carlos Pedro and Nuno Borges Carvalho Instituto de Telecomunicações Universidade de Aveiro, Campus Universitário de Santiago
More informationA linearized amplifier using self-mixing feedback technique
LETTER IEICE Electronics Express, Vol.11, No.5, 1 8 A linearized amplifier using self-mixing feedback technique Dong-Ho Lee a) Department of Information and Communication Engineering, Hanbat National University,
More informationA Mirror Predistortion Linear Power Amplifier
A Mirror Predistortion Linear Power Amplifier Khaled Fayed 1, Amir Zaghloul 2, 3, Amin Ezzeddine 1, and Ho Huang 1 1. AMCOM Communications Inc., Gaithersburg, MD 2. U.S. Army Research Laboratory 3. Virginia
More informationLinearization Method Using Variable Capacitance in Inter-Stage Matching Networks for CMOS Power Amplifier
Linearization Method Using Variable Capacitance in Inter-Stage Matching Networks for CMOS Power Amplifier Jaehyuk Yoon* (corresponding author) School of Electronic Engineering, College of Information Technology,
More informationONE OF THE major issues in a power-amplifier design
2364 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 12, DECEMBER 1999 Large- and Small-Signal IMD Behavior of Microwave Power Amplifiers Nuno Borges de Carvalho, Student Member, IEEE,
More informationA 3rd- and 5th-order intermodulation products generator for predistortion of base-station HPAs
Title A 3rd- and 5th-order intermodulation products generator for predistortion of base-station HPAs Author(s) Sun, XL; Cheung, SW; Yuk, TI Citation The 200 International Conference on Advanced Technologies
More informationEffect of Baseband Impedance on FET Intermodulation
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 3, MARCH 2003 1045 Effect of Baseband Impedance on FET Intermodulation James Brinkhoff, Student Member, IEEE, and Anthony Edward Parker,
More informationA High Gain and Improved Linearity 5.7GHz CMOS LNA with Inductive Source Degeneration Topology
A High Gain and Improved Linearity 5.7GHz CMOS LNA with Inductive Source Degeneration Topology Ch. Anandini 1, Ram Kumar 2, F. A. Talukdar 3 1,2,3 Department of Electronics & Communication Engineering,
More informationDesign and simulation of Parallel circuit class E Power amplifier
International Journal of scientific research and management (IJSRM) Volume 3 Issue 7 Pages 3270-3274 2015 \ Website: www.ijsrm.in ISSN (e): 2321-3418 Design and simulation of Parallel circuit class E Power
More informationA GHz Highly Linear Broadband Power Amplifier for LTE-A Application
Progress In Electromagnetics Research C, Vol. 66, 47 54, 2016 A 1.8 2.8 GHz Highly Linear Broadband Power Amplifier for LTE-A Application Chun-Qing Chen, Ming-Li Hao, Zhi-Qiang Li, Ze-Bao Du, and Hao Yang
More informationClass E and Class D -1 GaN HEMT Switched-Mode Power Amplifiers
Class E and Class D -1 GaN HEMT Switched-Mode Power Amplifiers J. A. GARCÍA *, R. MERLÍN *, M. FERNÁNDEZ *, B. BEDIA *, L. CABRIA *, R. MARANTE *, T. M. MARTÍN-GUERRERO ** *Departamento Ingeniería de Comunicaciones
More informationLinearization of Three-Stage Doherty Amplifier
Linearization of Three-Stage Doherty Amplifier NATAŠA MALEŠ ILIĆ, ALEKSANDAR ATANASKOVIĆ, BRATISLAV MILOVANOVIĆ Faculty of Electronic Engineering University of Niš, Aleksandra Medvedeva 14, Niš Serbia
More informationIn modern wireless. A High-Efficiency Transmission-Line GaN HEMT Class E Power Amplifier CLASS E AMPLIFIER. design of a Class E wireless
CASS E AMPIFIER From December 009 High Frequency Electronics Copyright 009 Summit Technical Media, C A High-Efficiency Transmission-ine GaN HEMT Class E Power Amplifier By Andrei Grebennikov Bell abs Ireland
More informationA High Linearity and Efficiency Doherty Power Amplifier for Retrodirective Communication
PIERS ONLINE, VOL. 4, NO. 2, 2008 151 A High Linearity and Efficiency Doherty Power Amplifier for Retrodirective Communication Xiaoqun Chen, Yuchun Guo, and Xiaowei Shi National Key Laboratory of Antennas
More informationDesign Of A Power Amplifier Based On Si-LDMOS For WiMAX At 3.5GHz
ITB Department University Of GävleG Sweden Design Of A Power Amplifier Based On Si-LDMOS For WiMAX At 3.5GHz CHARLES NADER June 2006 Master s s Thesis in Electronics/Telecommunication Supervisor: Prof.
More informationWITH mobile communication technologies, such as longterm
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS, VOL. 63, NO. 6, JUNE 206 533 A Two-Stage Broadband Fully Integrated CMOS Linear Power Amplifier for LTE Applications Kihyun Kim, Jaeyong Ko,
More informationLINEARITY IMPROVEMENT OF CASCODE CMOS LNA USING A DIODE CONNECTED NMOS TRANSISTOR WITH A PARALLEL RC CIRCUIT
Progress In Electromagnetics Research C, Vol. 17, 29 38, 2010 LINEARITY IMPROVEMENT OF CASCODE CMOS LNA USING A DIODE CONNECTED NMOS TRANSISTOR WITH A PARALLEL RC CIRCUIT C.-P. Chang, W.-C. Chien, C.-C.
More informationA COMPACT WIDEBAND MATCHING 0.18-µM CMOS UWB LOW-NOISE AMPLIFIER USING ACTIVE FEED- BACK TECHNIQUE
Progress In Electromagnetics Research C, Vol. 16, 161 169, 2010 A COMPACT WIDEBAND MATCHING 0.18-µM CMOS UWB LOW-NOISE AMPLIFIER USING ACTIVE FEED- BACK TECHNIQUE J.-Y. Li, W.-J. Lin, and M.-P. Houng Department
More informationHighly linear common-gate mixer employing intrinsic second and third order distortion cancellation
Highly linear common-gate mixer employing intrinsic second and third order distortion cancellation Mahdi Parvizi a), and Abdolreza Nabavi b) Microelectronics Laboratory, Tarbiat Modares University, Tehran
More informationDESIGN OF AN S-BAND TWO-WAY INVERTED ASYM- METRICAL DOHERTY POWER AMPLIFIER FOR LONG TERM EVOLUTION APPLICATIONS
Progress In Electromagnetics Research Letters, Vol. 39, 73 80, 2013 DESIGN OF AN S-BAND TWO-WAY INVERTED ASYM- METRICAL DOHERTY POWER AMPLIFIER FOR LONG TERM EVOLUTION APPLICATIONS Hai-Jin Zhou * and Hua
More informationRECENT MOBILE handsets for code-division multiple-access
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 55, NO. 4, APRIL 2007 633 The Doherty Power Amplifier With On-Chip Dynamic Bias Control Circuit for Handset Application Joongjin Nam and Bumman
More informationDESIGN AND SIMULATION OF A GaAs HBT POWER AMPLIFIER FOR WIDEBAND CDMA WIRELESS SYSTEM
M. S. Alam, O. Farooq, and Izharuddin and G. A. Armstrong DESIGN AND SIMULATION OF A GaAs HBT POWER AMPLIFIER FOR WIDEBAND CDMA WIRELESS SYSTEM M. S. Alam, O. Farooq, Izharuddin Department of Electronics
More informationBase-Band Impedance Control and Calibration for On- Wafer Linearity Measurements
MAURY MICROWAVE CORPORATION Base-Band Impedance Control and Calibration for On- Wafer Linearity Measurements Authors: M. J. Pelk, L.C.N. de Vreede, M. Spirito and J. H. Jos. Delft University of Technology,
More informationCHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN
93 CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 4.1 INTRODUCTION Ultra Wide Band (UWB) system is capable of transmitting data over a wide spectrum of frequency bands with low power and high data
More informationPower Handling Capability of High-Q Evanescentmode RF MEMS Resonators with Flexible Diaphragm
Purdue University Purdue e-pubs Birck and NCN Publications Birck Nanotechnology Center 2009 Power Handling Capability of High-Q Evanescentmode RF MEMS Resonators with Flexible Xiaoguang Liu Purdue University
More informationQUICK START GUIDE FOR DEMONSTRATION CIRCUIT 678A 40MHZ TO 900MHZ DIRECT CONVERSION QUADRATURE DEMODULATOR
DESCRIPTION QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 678A LT5517 Demonstration circuit 678A is a 40MHz to 900MHz Direct Conversion Quadrature Demodulator featuring the LT5517. The LT 5517 is a direct
More informationWideband and High Efficiency Feed-Forward Linear Power Amplifier for Base Stations
Base Station Power Amplifier High Efficiency Wideband and High Efficiency Feed-Forward Linear Power Amplifier for Base Stations This paper presents a new feed-forward linear power amplifier configuration
More information400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324
Data Sheet FEATURES Operation from MHz to MHz Gain of 14.6 db at 21 MHz OIP of 4.1 dbm at 21 MHz P1dB of 29.1 dbm at 21 MHz Noise figure of.8 db Dynamically adjustable bias Adjustable power supply bias:.
More informationModeling Nonlinear Memory Effects on the AM/AM, AM/PM and Two-Tone IMD in Microwave PA Circuits
Modeling Nonlinear Memory Effects on the AM/AM, AM/PM and Two-Tone IMD in Microwave PA Circuits Pedro M. Cabral, José C. Pedro, Nuno B. Carvalho Instituto de Telecomunicações, Universidade de Aveiro, Campus
More informationRF Power Amplifiers for Wireless Communications
RF Power Amplifiers for Wireless Communications Second Edition Steve C. Cripps ARTECH HOUSE BOSTON LONDON artechhouse.com Contents Preface to the Second Edition CHAPTER 1 1.1 1.2 Linear RF Amplifier Theory
More informationBER, MER Analysis of High Power Amplifier designed with LDMOS
International Journal of Advances in Electrical and Electronics Engineering 284 Available online at www.ijaeee.com & www.sestindia.org/volume-ijaeee/ ISSN: 2319-1112 BER, MER Analysis of High Power Amplifier
More informationA low noise amplifier with improved linearity and high gain
International Journal of Electronics and Computer Science Engineering 1188 Available Online at www.ijecse.org ISSN- 2277-1956 A low noise amplifier with improved linearity and high gain Ram Kumar, Jitendra
More informationAPPLICATION NOTE dBm PA and PA Predriver with 37% Efficiency for 2.4GHz FHSS WLAN Applications
Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, pa, bluetooth, 2.4ghz wireless, rfic, wlan, fhss, lna, rf ics May 01, 2001 APPLICATION NOTE 584 +23dBm PA and PA Predriver with 37% Efficiency
More informationPrepared for the Engineers of Samsung Electronics RF transmitter & power amplifier
Prepared for the Engineers of Samsung Electronics RF transmitter & power amplifier Changsik Yoo Dept. Electrical and Computer Engineering Hanyang University, Seoul, Korea 1 Wireless system market trends
More informationISSCC 2006 / SESSION 11 / RF BUILDING BLOCKS AND PLLS / 11.9
ISSCC 2006 / SESSION 11 / RF BUILDING BLOCKS AND PLLS / 11.9 11.9 A Single-Chip Linear CMOS Power Amplifier for 2.4 GHz WLAN Jongchan Kang 1, Ali Hajimiri 2, Bumman Kim 1 1 Pohang University of Science
More informationDr.-Ing. Ulrich L. Rohde
Dr.-Ing. Ulrich L. Rohde Noise in Oscillators with Active Inductors Presented to the Faculty 3 : Mechanical engineering, Electrical engineering and industrial engineering, Brandenburg University of Technology
More informationA 3 5 GHz CMOS High Linearity Ultra Wideband Low Noise Amplifier in 0.18µ CMOS
Proceedings of the 5th WSEAS Int. Conf. on CIRCUITS, SYSTEMS, ELECTRONICS, CONTROL & SIGNAL PROCESSING, Dallas, USA, November -, 6 5 A 5 GHz CMOS High Linearity Ultra Wideband Low Noise Amplifier in.8µ
More informationALTHOUGH zero-if and low-if architectures have been
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 40, NO. 6, JUNE 2005 1249 A 110-MHz 84-dB CMOS Programmable Gain Amplifier With Integrated RSSI Function Chun-Pang Wu and Hen-Wai Tsao Abstract This paper describes
More informationA Low Power Single Ended Inductorless Wideband CMOS LNA with G m Enhancement and Noise Cancellation
2017 International Conference on Electronic, Control, Automation and Mechanical Engineering (ECAME 2017) ISBN: 978-1-60595-523-0 A Low Power Single Ended Inductorless Wideband CMOS LNA with G m Enhancement
More informationAn RF-input outphasing power amplifier with RF signal decomposition network
An RF-input outphasing power amplifier with RF signal decomposition network The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation
More informationEVALUATION KIT AVAILABLE 10MHz to 1050MHz Integrated RF Oscillator with Buffered Outputs. Typical Operating Circuit. 10nH 1000pF MAX2620 BIAS SUPPLY
19-1248; Rev 1; 5/98 EVALUATION KIT AVAILABLE 10MHz to 1050MHz Integrated General Description The combines a low-noise oscillator with two output buffers in a low-cost, plastic surface-mount, ultra-small
More informationRF LDMOS Wideband Integrated Power Amplifier
Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MMRF2004NB wideband integrated circuit is designed with on--chip matching that makes it usable from 2300 to 2700
More informationLINEARIZATION OF SYMMETRICAL AND ASYMMETRICAL TWO-WAY DOHERTY AMPLIFIER. Aleksandar Atanasković, Nataša Maleš-Ilić, Bratislav Milovanović
FACTA UNIVERSITATIS Ser: Elec. Energ. Vol. 25, N o 2, August 2012, pp. 161-170 DOI: 10.2298/FUEE1202161A LINEARIZATION OF SYMMETRICAL AND ASYMMETRICAL TWO-WAY DOHERTY AMPLIFIER Aleksandar Atanasković,
More informationOn-chip Smart Functions for Efficiency Enhancement of MMIC Power Amplifiers for W-CDMA Handset Applications
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.3, NO. 1, MARCH, 2003 47 On-chip Smart Functions for Efficiency Enhancement of MMIC Power Amplifiers for W-CDMA Handset Applications Youn S. Noh, Ji
More informationCLASS-C POWER AMPLIFIER DESIGN FOR GSM APPLICATION
CLASS-C POWER AMPLIFIER DESIGN FOR GSM APPLICATION Lopamudra Samal, Prof K. K. Mahapatra, Raghu Ram Electronics Communication Department, Electronics Communication Department, Electronics Communication
More informationUneven Doherty Amplifier Based on GaN HEMTs Characteristic
11 International Conference on Circuits, System and Simulation IPCSIT vol.7 (11) (11) IACSIT Press, Singapore Uneven Doherty Amplifier Based on GaN HEMTs Characteristic K. Pushyaputra, T. Pongthavornkamol,
More information30 MHz to 6 GHz RF/IF Gain Block ADL5544
Data Sheet FEATURES Fixed gain of 17.4 db Broadband operation from 3 MHz to 6 GHz Input/output internally matched to Ω Integrated bias control circuit OIP3 of 34.9 dbm at 9 MHz P1dB of 17.6 dbm at 9 MHz
More information30 MHz to 6 GHz RF/IF Gain Block ADL5611
Data Sheet FEATURES Fixed gain of 22.2 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 4. dbm at 9 MHz P1dB
More informationEvaluating and Optimizing Tradeoffs in CMOS RFIC Upconversion Mixer Design. by Dr. Stephen Long University of California, Santa Barbara
Evaluating and Optimizing Tradeoffs in CMOS RFIC Upconversion Mixer Design by Dr. Stephen Long University of California, Santa Barbara It is not easy to design an RFIC mixer. Different, sometimes conflicting,
More informationMeasured RF Performance Summary
Summary Application Note The AP603 is a high dynamic range power amplifier in a lead-free/rohs-compliant 5x6mm power DFN SMT package. It features an internal active-bias circuit that provides temperature
More informationDesign and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology
Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology Renbin Dai, and Rana Arslan Ali Khan Abstract The design of Class A and Class AB 2-stage X band Power Amplifier is described in
More informationA SWITCHED-CAPACITOR POWER AMPLIFIER FOR EER/POLAR TRANSMITTERS
A SWITCHED-CAPACITOR POWER AMPLIFIER FOR EER/POLAR TRANSMITTERS Sang-Min Yoo, Jeffrey Walling, Eum Chan Woo, David Allstot University of Washington, Seattle, WA Submission Highlight A fully-integrated
More informationK-BAND HARMONIC DIELECTRIC RESONATOR OS- CILLATOR USING PARALLEL FEEDBACK STRUC- TURE
Progress In Electromagnetics Research Letters, Vol. 34, 83 90, 2012 K-BAND HARMONIC DIELECTRIC RESONATOR OS- CILLATOR USING PARALLEL FEEDBACK STRUC- TURE Y. C. Du *, Z. X. Tang, B. Zhang, and P. Su School
More informationDESIGN OF 2.4 GHZ LOW POWER CMOS TRANSMITTER FRONT END
Volume 117 No. 16 2017, 685-694 ISSN: 1311-8080 (printed version); ISSN: 1314-3395 (on-line version) url: http://www.ijpam.eu ijpam.eu DESIGN OF 2.4 GHZ LOW POWER CMOS TRANSMITTER FRONT END 1 S.Manjula,
More informationQUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1455A 5MHZ TO 1600MHZ HIGH LINEARITY DIRECT QUADRATURE MODULATOR LTC5598 DESCRIPTION
LTC5598 DESCRIPTION Demonstration circuit 1455A is a high linearity direct quadrature modulator featuring the LTC5598. The LTC 5598 is a direct I/Q modulator designed for high performance wireless applications,
More informationHigh Gain Low Noise Amplifier Design Using Active Feedback
Chapter 6 High Gain Low Noise Amplifier Design Using Active Feedback In the previous two chapters, we have used passive feedback such as capacitor and inductor as feedback. This chapter deals with the
More informationSimulations of High Linearity and High Efficiency of Class B Power Amplifiers in GaN HEMT Technology
Simulations of High Linearity and High Efficiency of Class B Power Amplifiers in GaN HEMT Technology Vamsi Paidi, Shouxuan Xie, Robert Coffie, Umesh K Mishra, Stephen Long, M J W Rodwell Department of
More informationEfficiency Enhancement of CDMA Power Amplifiers in Mobile Handsets Using Dynamic Supplies. Georgia Tech Analog Consortium Presentation
Efficiency Enhancement of CDMA Power Amplifiers in Mobile Handsets Using Dynamic Supplies Biranchinath Sahu Advisor: Prof. Gabriel A. Rincón-Mora Analog Integrated Circuits Laboratory School of Electrical
More information30 MHz to 6 GHz RF/IF Gain Block ADL5610
Data Sheet FEATURES Fixed gain of 18.4 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 38.8 dbm at 9 MHz P1dB
More informationDirect-Conversion I-Q Modulator Simulation by Andy Howard, Applications Engineer Agilent EEsof EDA
Direct-Conversion I-Q Modulator Simulation by Andy Howard, Applications Engineer Agilent EEsof EDA Introduction This article covers an Agilent EEsof ADS example that shows the simulation of a directconversion,
More informationPush-Pull Class-E Power Amplifier with a Simple Load Network Using an Impedance Matched Transformer
Proceedings of the International Conference on Electrical, Electronics, Computer Engineering and their Applications, Kuala Lumpur, Malaysia, 214 Push-Pull Class-E Power Amplifier with a Simple Load Network
More informationUpstream Challenges With DOCSIS 3.1
Upstream Challenges With DOCSIS 3.1 White Paper A Technical Paper prepared for SCTE/ISBE by Jan Ariesen Chief Technology Officer Technetix Inc 2017 SCTE-ISBE and NCTA. All rights reserved. Title Table
More informationA 14-bit 2.5 GS/s DAC based on Multi-Clock Synchronization. Hegang Hou*, Zongmin Wang, Ying Kong, Xinmang Peng, Haitao Guan, Jinhao Wang, Yan Ren
Joint International Mechanical, Electronic and Information Technology Conference (JIMET 2015) A 14-bit 2.5 GS/s based on Multi-Clock Synchronization Hegang Hou*, Zongmin Wang, Ying Kong, Xinmang Peng,
More informationEfficiently simulating a direct-conversion I-Q modulator
Efficiently simulating a direct-conversion I-Q modulator Andy Howard Applications Engineer Agilent Eesof EDA Overview An I-Q or vector modulator is a commonly used integrated circuit in communication systems.
More information50 MHz to 4.0 GHz RF/IF Gain Block ADL5602
Data Sheet FEATURES Fixed gain of 20 db Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dbm at 2.0
More informationUPSTREAM CHALLENGES WITH DOCSIS 3.1
UPSTREAM CHALLENGES WITH DOCSIS 3.1 White Paper By Jan Ariesen Chief Technology Officer 24th August 2017 Aug/2017 Contents 1.0 Introduction... 1 2. Passive intermodulation (PIM) in in-home splitters...
More informationIEEE Antennas and Wireless Propagation Letters. Copyright Institute of Electrical and Electronics Engineers.
Title Dual-band monopole antenna with frequency-tunable feature for WiMAX applications Author(s) Sun, X; Cheung, SW; Yuk, TTI Citation IEEE Antennas and Wireless Propagation Letters, 2013, v. 12, p. 100-103
More informationVCO Design Project ECE218B Winter 2011
VCO Design Project ECE218B Winter 2011 Report due 2/18/2011 VCO DESIGN GOALS. Design, build, and test a voltage-controlled oscillator (VCO). 1. Design VCO for highest center frequency (< 400 MHz). 2. At
More informationDESIGNING AN OCTAVE-BANDWIDTH DOHERTY AM- PLIFIER USING A NOVEL POWER COMBINATION METHOD
Progress In Electromagnetics Research B, Vol. 56, 327 346, 2013 DESIGNING AN OCTAVE-BANDWIDTH DOHERTY AM- PLIFIER USING A NOVEL POWER COMBINATION METHOD Necip Sahan 1, * and Simsek Demir 2 1 Aselsan Inc.,
More informationL AND S BAND TUNABLE FILTERS PROVIDE DRAMATIC IMPROVEMENTS IN TELEMETRY SYSTEMS
L AND S BAND TUNABLE FILTERS PROVIDE DRAMATIC IMPROVEMENTS IN TELEMETRY SYSTEMS Item Type text; Proceedings Authors Wurth, Timothy J.; Rodzinak, Jason Publisher International Foundation for Telemetering
More informationA Product Development Flow for 5G/LTE Envelope Tracking Power Amplifiers, Part 2
Test & Measurement A Product Development Flow for 5G/LTE Envelope Tracking Power Amplifiers, Part 2 ET and DPD Enhance Efficiency and Linearity Figure 12: Simulated AM-AM and AM-PM response plots for a
More informationA Simple Bandpass Filter with Independently Tunable Center Frequency and Bandwidth
Progress In Electromagnetics Research Letters, Vol. 69, 3 8, 27 A Simple Bandpass Filter with Independently Tunable Center Frequency and Bandwidth Bo Zhou *, Jing Pan Song, Feng Wei, and Xiao Wei Shi Abstract
More informationDevelopment of Broadband Class E Power Amplifier for WBAN Applications
Volume 118 No. 5 2018, 745-750 ISSN: 1311-8080 (printed version); ISSN: 1314-3395 (on-line version) url: http://www.ijpam.eu ijpam.eu Development of Broadband Class E Power Amplifier for WBAN Applications
More informationKH300 Wideband, High-Speed Operational Amplifier
Wideband, High-Speed Operational Amplifier Features -3dB bandwidth of 85MHz 00V/µsec slew rate 4ns rise and fall time 100mA output current Low distortion, linear phase Applications Digital communications
More informationGeng Ye U. N. Carolina at Charlotte
Linearization Conditions for Two and Four Stage Circuit Topologies Including Third Order Nonlinearities Thomas P. Weldon tpweldon@uncc.edu Geng Ye gye@uncc.edu Raghu K. Mulagada rkmulaga@uncc.edu Abstract
More informationLINEARIZED CMOS HIGH EFFECIENCY CLASS-E RF POWER AMPLIFIER
Proceedings of the 5th WSEAS Int. Conf. on Electronics, Hardware, Wireless and Optical Communications, Madrid, Spain, February 5-7, 006 (pp09-3) LINEARIZED CMOS HIGH EFFECIENCY CLASS-E RF POWER AMPLIFIER
More informationHigh Power Two- Stage Class-AB/J Power Amplifier with High Gain and
MPRA Munich Personal RePEc Archive High Power Two- Stage Class-AB/J Power Amplifier with High Gain and Efficiency Fatemeh Rahmani and Farhad Razaghian and Alireza Kashaninia Department of Electronics,
More informationDesign technique of broadband CMOS LNA for DC 11 GHz SDR
Design technique of broadband CMOS LNA for DC 11 GHz SDR Anh Tuan Phan a) and Ronan Farrell Institute of Microelectronics and Wireless Systems, National University of Ireland Maynooth, Maynooth,Co. Kildare,
More informationCompact Microstrip UWB Power Divider with Dual Notched Bands Using Dual-Mode Resonator
Progress In Electromagnetics Research Letters, Vol. 75, 39 45, 218 Compact Microstrip UWB Power Divider with Dual Notched Bands Using Dual-Mode Resonator Lihua Wu 1, Shanqing Wang 2,LuetaoLi 3, and Chengpei
More informationDownloaded from edlib.asdf.res.in
ASDF India Proceedings of the Intl. Conf. on Innovative trends in Electronics Communication and Applications 2014 242 Design and Implementation of Ultrasonic Transducers Using HV Class-F Power Amplifier
More informationNOWADAYS, multistage amplifiers are growing in demand
1690 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS, VOL. 51, NO. 9, SEPTEMBER 2004 Advances in Active-Feedback Frequency Compensation With Power Optimization and Transient Improvement Hoi
More informationMMICs based on pseudomorphic
phemt MMIC Power Amplifiers for Base Stations and Adaptive Arrays GaAs technology is used in a family of amplifiers for wireless applications requiring good gain, efficiency and linearity Raymond S. Pengelly,
More informationRF Power Amplifiers. The definition of the efficiency can be represented in an equation form as:
RF Power Amplifiers Iulian Rosu, YO3DAC / VA3IUL, http://www.qsl.net/va3iul RF Power Amplifiers are used in a wide variety of applications including Wireless Communication, TV transmissions, Radar, and
More informationDESIGN OF LINEARITY IMPROVED ASYMMETRICAL GAN DOHERTY POWER AMPLIFIER USING COMPOS- ITE RIGHT/LEFT-HANDED TRANSMISSION LINES
Progress In Electromagnetics Research B, Vol. 53, 89 106, 2013 DESIGN OF LINEARITY IMPROVED ASYMMETRICAL GAN DOHERTY POWER AMPLIFIER USING COMPOS- ITE RIGHT/LEFT-HANDED TRANSMISSION LINES Yunxuan Feng
More informationA Simple Method to Reduce DC Power Consumption in CDMA RF Power Amplifiers Through the. LMV225 and an Efficient Switcher AN-1438
A Simple Method to Reduce DC Power Consumption in CDMA RF Power Amplifiers Through the LMV225 and an Efficient Switcher Introduction The need for higher wireless data rates is driving the migration of
More information10MHz to 1050MHz Integrated RF Oscillator with Buffered Outputs
9-24; Rev 2; 2/02 EVALUATION KIT AVAILABLE 0MHz to 050MHz Integrated General Description The combines a low-noise oscillator with two output buffers in a low-cost, plastic surface-mount, ultra-small µmax
More informationDESIGN AND INVESTIGATION OF BROADBAND MONOPOLE ANTENNA LOADED WITH NON-FOSTER CIRCUIT
Progress In Electromagnetics Research C, Vol. 17, 245 255, 21 DESIGN AND INVESTIGATION OF BROADBAND MONOPOLE ANTENNA LOADED WITH NON-FOSTER CIRCUIT F.-F. Zhang, B.-H. Sun, X.-H. Li, W. Wang, and J.-Y.
More informationA 10:1 UNEQUAL GYSEL POWER DIVIDER USING A CAPACITIVE LOADED TRANSMISSION LINE
Progress In Electromagnetics Research Letters, Vol. 32, 1 10, 2012 A 10:1 UNEQUAL GYSEL POWER DIVIDER USING A CAPACITIVE LOADED TRANSMISSION LINE Y. Kim * School of Electronic Engineering, Kumoh National
More informationEECS-730 High-Power Inverted Doherty Power Amplifier for Broadband Application
EECS-730 High-Power Inverted Doherty Power Amplifier for Broadband Application Jehyeon Gu* Mincheol Seo Hwiseob Lee Jinhee Kwon Junghyun Ham Hyungchul Kim and Youngoo Yang Sungkyunkwan University 300 Cheoncheon-dong
More informationAN1509 APPLICATION NOTE A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR
AN1509 APPLICATION NOTE A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR F. Carrara - A. Scuderi - G. Tontodonato - G. Palmisano 1. ABSTRACT The potential of a high-performance low-cost silicon bipolar
More informationINVENTION DISCLOSURE- ELECTRONICS SUBJECT MATTER IMPEDANCE MATCHING ANTENNA-INTEGRATED HIGH-EFFICIENCY ENERGY HARVESTING CIRCUIT
INVENTION DISCLOSURE- ELECTRONICS SUBJECT MATTER IMPEDANCE MATCHING ANTENNA-INTEGRATED HIGH-EFFICIENCY ENERGY HARVESTING CIRCUIT ABSTRACT: This paper describes the design of a high-efficiency energy harvesting
More informationThis article has been accepted and published on J-STAGE in advance of copyediting. Content is final as presented.
This article has been accepted and published on J-STAGE in advance of copyediting. Content is final as presented. IEICE Electronics Express, Vol.* No.*,*-* Design of Broadband Inverse Class-F Power Amplifier
More informationSP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver
SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver Arvin R. Shahani, Derek K. Shaeffer, Thomas H. Lee Stanford University, Stanford, CA At submicron channel lengths, CMOS is
More informationTermination Insensitive Mixers By Howard Hausman President/CEO, MITEQ, Inc. 100 Davids Drive Hauppauge, NY
Termination Insensitive Mixers By Howard Hausman President/CEO, MITEQ, Inc. 100 Davids Drive Hauppauge, NY 11788 hhausman@miteq.com Abstract Microwave mixers are non-linear devices that are used to translate
More informationA COMPACT DUAL-BAND POWER DIVIDER USING PLANAR ARTIFICIAL TRANSMISSION LINES FOR GSM/DCS APPLICATIONS
Progress In Electromagnetics Research Letters, Vol. 1, 185 191, 29 A COMPACT DUAL-BAND POWER DIVIDER USING PLANAR ARTIFICIAL TRANSMISSION LINES FOR GSM/DCS APPLICATIONS T. Yang, C. Liu, L. Yan, and K.
More informationTHE LINEARIZATION TECHNIQUE FOR MULTICHANNEL WIRELESS SYSTEMS WITH THE INJECTION OF THE SECOND HARMONICS
THE LINEARIZATION TECHNIQUE FOR MULTICHANNEL WIRELESS SYSTEMS WITH THE INJECTION OF THE SECOND HARMONICS N. Males-Ilic#, B. Milovanovic*, D. Budimir# #Wireless Communications Research Group, Department
More informationi. At the start-up of oscillation there is an excess negative resistance (-R)
OSCILLATORS Andrew Dearn * Introduction The designers of monolithic or integrated oscillators usually have the available process dictated to them by overall system requirements such as frequency of operation
More informationprint close Chris Bean, AWR Group, NI
1 of 12 3/28/2016 2:42 PM print close Microwaves and RF Chris Bean, AWR Group, NI Mon, 2016-03-28 10:44 The latest version of an EDA software tool works directly with device load-pull data to develop the
More informationIntermodulation Distortion and Compression Point Measurement of Active Integrated Antennas Using a Radiative Method
Progress In Electromagnetics Research M, Vol. 54, 45 52, 207 Intermodulation Distortion and Compression Point Measurement of Active Integrated Antennas Using a Radiative Method Evgueni Kaverine, *, Sebastien
More informationDesign of low phase noise InGaP/GaAs HBT-based differential Colpitts VCOs for interference cancellation system
Indian Journal of Engineering & Materials Sciences Vol. 17, February 2010, pp. 34-38 Design of low phase noise InGaP/GaAs HBT-based differential Colpitts VCOs for interference cancellation system Bhanu
More information