High Performance Schottky Rectifier, 1 A

Transcription

1 High Performance Schottky Rectifier, A VS-MQ060NTRPbF Cathode Anode SMA (DO-24AC) PRODUCT SUMMARY Package SMA (DO-24AC) I F(AV) A V R 60 V V F at I F 0.63 I RM 7.5 ma at 25 C T J max. 50 C Diode variation Single E AS 2.0 mj FEATURES Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Meets MSL level, per J-STD-020, LF maximum peak of 260 C Designed and qualified for industrial level Material categorization: for definitions of compliance please see DESCRIPTION The VS-MQ060NTRPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Rectangular waveform A V RRM 60 V I FSM t p = 5 μs sine 40 A V F.5 A pk, T J = 25 C 0.63 V T J Range -55 to +50 C VOLTAGE RATINGS PARAMETER SYMBOL VS-MQ060NTRPbF UNITS Maximum DC reverse voltage V R Maximum working peak reverse voltage V RWM 60 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 4 Maximum peak one cycle non-repetitive surge current See fig. 6 I F(AV) 50 % duty cycle at T L = 20 C, rectangular waveform On PC board 9 mm 2 island (0.03 mm thick copper pad area) 50 % duty cycle at T L = 29 C, rectangular waveform On PC board 9 mm 2 island (0.03 mm thick copper pad area) I FSM condition and with rated 5 μs sine or 3 μs rect. pulse Following any rated load 40 ms sine or 6 ms rect. pulse V RRM applied Non-repetitive avalanche energy E AS, I AS = A, L = 4 mh 2.0 mj Current decaying linearly to zero in μs Repetitive avalanche current I AR.0 A Frequency limited by T J maximum V A =.5 x V R typical.5 A A Revision: 7-May-7 Document Number: 948 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-MQ060NTRPbF ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS A 0.63 Maximum forward voltage drop.5 A 0.7 V () See fig. FM A 0.57 T J = 25 C.5 A 0.63 V Maximum reverse leakage current 0.5 I See fig. 2 RM V R = Rated V R T J = 25 C 7.5 ma Threshold voltage V F(TO) 0.45 V T J = T J maximum Forward slope resistance r t 86.8 mω Typical junction capacitance C T V R = V DC,, test signal = MHz 3 pf Typical series inductance L S Measured lead to lead 5 mm from package body 2.0 nh Maximum voltage rate of change dv/dt Rated V R 000 V/μs Note () Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T () J, T Stg -55 to +50 C Maximum thermal resistance, junction to ambient R thja DC operation 80 C/W Approximate weight 0.07 g oz. Marking device Case style SMA (DO-24AC) (similar D-64) H Note dp () tot < thermal runaway condition for a diode on its own heatsink dt J R thja Revision: 7-May-7 2 Document Number: 948 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-MQ060NTRPbF I F - Instantaneous Forward Current (A) T J = 50 C T J = 25 C Allowable Case Temperature ( C) DC 20 D = 0.20 D = 0.25 D = D = 0.50 D = Square wave (D = 0.50) % rated V R applied See note () V FM - Forward Voltage Drop (V) I F(AV) - Average Forward Current (A) Fig. - Maximum Forward Voltage Drop Characteristics Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature I R - Reverse Current (ma) T J = 50 C T J = 25 C T J = 0 C T J = 75 C T J = 50 C Average Power Loss (W) D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC RMS limit V R - Reverse Voltage (V) I F(AV) - Average Forward Current (A) Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current C T - Junction Capacitance (pf) I FSM - Non-Repetitive Surge Current (A) 0 At any rated load condition and with rated V RRM applied following surge V R - Reverse Voltage (V) t p - Square Wave Pulse Duration (µs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = 80 % rated V R Revision: 7-May-7 3 Document Number: 948 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-MQ060NTRPbF ORDERING INFORMATION TABLE Device code VS- M Q 060 N TR PbF product 2 - Current rating ( = A) 3 - M = SMA 4 - Q = Schottky Q series 5 - Voltage rating (060 = 60 V) 6 - N = new SMA 7 - TR = tape and reel 8 - PbF = lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-MQ060NTRPbF 5AT " diameter plastic tape and reel Dimensions Part marking information Packaging information LINKS TO RELATED DOCUMENTS Revision: 7-May-7 4 Document Number: 948 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 Outline Dimensions SMA DIMENSIONS in inches (millimeters) DO-24AC (SMA) Cathode band Mounting Pad Layout (.65) (.25) 0. (2.79) 0.0 (2.54) (.88) MAX (.68) MIN (4.50) 0.57 (3.99) 0.02 (0.305) (0.52) (.52) MIN (5.28) REF (2.29) (.98) (.52) (0.76) (0.203) 0 (0) (5.28) 0.94 (4.93) Document Number: For technical questions within your region, please contact one of the following: Revision: 09-Jul- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

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