TS272C,I,M HIGH PERFORMANCE CMOS DUAL OPERATIONAL AMPLIFIERS

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Eric Fox
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1 HIGH PERFORMANE MOS DUA OPERATIONA AMPIFIERS OUTPUT OTAGE AN SWING TO GROUND EXEENT PHASE MARGIN ON APAITIE OADS GAIN BANDWIDTH PRODUT:.MHz STABE AND OW OFFSET OTAGE THREE INPUT OFFSET OTAGE SEETIONS N DIP8 (Plastic Package) DESRIPTION The TS7 devices are low cost, dual operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate MOS process allowing an excellent consumption-speed ratio. These series are ideally suited for low consumption applications. Three power consumptions are available allowing to have always the best consumption-speed ratio: I = µa/amp.: TS7 (very low power) I = µa/amp.: TS7M (low power) I = ma/amp.: TS7 (standard) These MOS amplifiers offer very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure ). ORDER ODE Package Part Number Temperature Range N D P TS7/A/B, +7 TS7I/AI/BI -, + TS7M/AM/BM -, + Example : TS7AN N = Dual in ine Package (DIP) D = Small Outline Package (SO) - also available in Tape & Reel (DT) P = Thin Shrink Small Outline Package (TSSOP) - only available in Tape & Reel (PT) D SO8 (Plastic Micropackage) P TSSOP8 (Thin Shrink Small Outline Package) PIN ONNETIONS (top view) Output - Inverting Input - Non-inverting Input Non-inverting Input 6 - Inverting Input 7 - Output November /9

2 BOK DIAGRAM urrent source x I Input differential Second stage Output stage Output E E ABSOUTE MAXIMUM RATINGS Symbol Parameter TS7/A/B TS7I/AI/BI TS7M/AM/BM Unit + Supply oltage ) 8 id Differential Input oltage ) ±8 i Input oltage ) -. to 8 I o Output urrent for + ± ma I in Input urrent ± ma T oper Operating Free-Air Temperature Range to +7 - to + - to + T stg Storage Temperature Range -6 to +. All values, except differential voltage are with respect to network ground terminal.. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage. OPERATING ONDITIONS Symbol Parameter alue Unit + Supply oltage to 6 icm ommon Mode Input oltage Range to + -. /9

3 SHEMATI DIAGRAM (for / TS7) T T R T7 T 8 T9 T T T6 T T T7 T8 T9 Input T T T T T Input R T6 T7 T T8 T T T9 T T T Output T6 /9

4 EETRIA HARATERISTIS + = +, - =, T amb = + (unless otherwise specified) Symbol io Input Offset oltage O =., ic = T min T amb T max Parameter TS7/I/M TS7A/AI/AM TS7B//I/M TS7/I/M TS7A/AI/AM TS7B//I/M TS7/A/B TS7I/AI/BI TS7M/AM/BM Min. Typ. Max. Min. Typ. Max. D io Input Offset oltage Drift µ/ I io Input Offset urrent note ) ic =, O = T min T amb T max. Maximum values including unavoidable inaccuracies of the industrial test...9. I ib Input Bias urrent - see note ic =, O = T min T amb T max OH O A vd GBP MR SR I I o I sink SR High evel Output oltage id = m, R = kω 8. T min T amb T max Unit m pa pa 8. ow evel Output oltage id = -m arge Signal oltage Gain i =, R = kω, o = to 6 T min T amb T max 7 6 Gain Bandwidth Product A v = db, R = kω, = pf, f in = khz.. ommon Mode Rejection Ratio i = to 7., o = Supply oltage Rejection Ratio + = to, o = Supply urrent (per amplifier) A v =, no load, o = T min T amb T max 6 Output Short ircuit urrent o =, id = m 6 6 Output Sink urrent o =, id = -m Slew Rate at Unity Gain R = kω, = pf, i = to 7.. m /m 7 Phase Margin at Unity Gain φm A v = db, R = kω, = pf Degrees K O Overshoot Factor % Equivalent Input Noise oltage n e n f = khz, R s = Ω Hz o / o hannel Separation db MHz db db µa ma ma /µs /9

5 TYPIA HARATERISTIS Figure : Supply urrent (each amplifier) versus Supply oltage Figure b : High evel Output oltage versus High evel Output urrent SUPPY URRENT, I ( m A).... T amb = A = = / O OUTPUT OTAGE, OH () 6 8 T amb id = = m = 6 = 8 6 SUPPY OTAGE, () Figure : Input Bias urrent versus Free Air Temperature OUTPUT URRENT, I Figure a : ow evel Output oltage versus ow evel Output urrent OH (ma) INPUT BIAS URRENT, I IB (pa) i = = 7 TEMPERATURE, T amb ( ) OUTPUT OTAGE, O () = = T amb = ic =. id = -m OUTPUT URRENT, I O (ma) Figure a : High evel Output oltage versus High evel Output urrent Figure b : ow evel Output oltage versus ow evel Output urrent OUTPUT OTAGE, OH () T amb id = = m = = OUTPUT OTAGE, O () = = 6 T amb = i =. = -m id OUTPUT URRENT, I OH (ma) 8 6 OUTPUT URRENT, I O (ma) /9

6 Figure : Open oop Frequency Response and Phase Shift Figure 8 : Phase Margin versus apacitive oad GAIN (db) - T amb = + = R = kω = pf A = PHASE GAIN Gain Bandwidth Product 6 FREQUENY, f (Hz) Phase Margin PHASE (Degrees) PHASE MARGIN, φ m (Degrees) APAITANE, T amb= R = kω A = = (pf) Figure 6 : Gain Bandwidth Product versus Supply oltage Figure 9 : Slew Rate versus Supply oltage GAIN BANDW. PROD., GBP (MHz) T amb= R = kω = pf A = 8 6 SUPPY OTAGE, () SEW RATES, SR (/µs) 7 T amb= 6 R = kω SR = pf SR SUPPY OTAGE, () Figure 7 : Phase Margin versus Supply oltage Figure : Input oltage Noise versus Frequency PHASE MARGIN, φ m (Degrees) T amb= R = kω = pf A = 8 6 SUPPY OTAGE, () EQUIAENT INPUT NOISE OTAGE (n/hz) = T amb = R S =Ω FREQUENY (Hz) 6/9

7 PAKAGE MEHANIA DATA 8 PINS - PASTI DIP Millimeters Inches Dimensions Min. Typ. Max. Min. Typ. Max. A.. a.. B b.6... b...8. D.9. E e.. e 7.6. e 7.6. F i Z..6 7/9

8 PAKAGE MEHANIA DATA 8 PINS - PASTI MIROPAKAGE (SO) c a a A b s a b e E D M 8 F Millimeters Inches Dimensions Min. Typ. Max. Min. Typ. Max. A.7.69 a.... a.6.6 a b b c (typ.) D E e.7. e.8. F M.6. S 8 (max.) 8/9

9 PAKAGE MEHANIA DATA 8 PINS - THIN SHRINK SMA OUTINE PAKAGE (TSSOP) k c.mm. inch GAGE PANE E SEATING PANE A A A E D b 8 8 e PIN IDENTIFIATION Millimeters Inches Dimensions Min. Typ. Max. Min. Typ. Max. A.. A....6 A b c.9... D E 6.. E e.6. k 8 8 l Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF OMPANIES Australia - Brazil - anada - hina - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States 9/9

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