60-GHz CMOS Integrated On-Chip Yagi Antenna and Balun Bandpass Filter In 90-nm CMOS Technology

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1 6-GHz MOS Integrated On-hip agi Antenna and an andpass Fiter In 9-nm MOS Technoogy Han-Lin e, ng-hsiang hang, Hey-R hang Institte of ompter and ommnication Engineering Department of Eectrica Engineering Nationa heng Kng University Tainan, Taiwan, RO E/EE NKU

2 Introdction and Motivation Otine Design of 6-GHz Integrated On-hip agi Antenna and an andpass Fiter (TSM 9-nm MOS Process 6-GHz on-chip agi antenna design 6-GHz on-chip ban bandpass fiter design Integration of agi antenna and ban bandpass fiter Microwave Probe-Station On-Wafer Measrement Simation and Measrement Rests oncsion E/EE NKU

3 Introdction & Motivation In, the F has aocated GHz for nicensed appications Wireess persona area network (WPAN 6 GHz Standards IEEE 8.5.3c, EMA/387, Wireess HD, WiGig MA and PH, IEEE 8..ad The attenation of the eectromagnetic wave is abot -5 d/km near the 6-GHz band De to the oxygen effect The attenation is too high for ong-range commnication GHz band is sitabe for short-range wireess commnication Wide bandwidth, high data-rate transmission ( Gb/s, privacy Spectra avaiabiity hanne W 6 GHz 7 MHz MHz 8.n 67 MHz 4 MHz UW 5 MHz 5 MHz Effective Tx power 8 mw (39 dm 6 mw ( dm.4 mw (-4 dm Max. possibe data rate it/hz Req d to get to Gbps 5 Mbps.4 bps/hz Mbps 5 bps/hz 48 Mbps bps/hz E/EE NKU

4 Introdction & Motivation Prse the integration of on-chip antenna and passive components in mm-wave RF front-end Mtifnction miimeter-wave components combine different fnctions into one device oss / size redction simpify the compexity of RF front-end circits Integration of on-chip antenna, ban, and bandpass fiter E/EE NKU 3

5 6-GHz Integrated On-hip agi Antenna and an andpass Fiter (TSM 9-nm MOS Process E/EE NKU 4

6 TSM 9-nm MOS Process The on-chip antenna is fabricate with TSM 9-nm MOS process nine-meta-ayer strctre To achieve a better performance of radiation The on-chip antenna is printed on the top ayer The fina goa is to integrate each of system-reated passive and active components into a singe chip E/EE NKU 5

7 6-GHz On-hip agi Antenna Design E/EE NKU 6

8 agi-uda antenna [9] 6-GHz On-chip agi Antenna Design ( In 98, agi-uda antenna is invented by professor Hidetsg agi and ectrer Shintaro Uda Fndamenta agi antenna incdes three components driver, director and refector Driver: a haf-waveength dipoe Director & refector: et antenna pattern have end-fire radiation characteristic [9] S. R. Sanders, Antennas and propagation for wireess commnication systems, John Wiey and Sons Ltd, E/EE NKU 7

9 VSWR 6-GHz On-chip agi Antenna Design ( Designed agi antenna (sim.: Driver =.36 λ eff, director =.9 λ eff, refector =.4 λ eff Refector: tiizing the grond pane (M of ban-fiter VSWR of the agi antenna 5-88 GHz 6 GHz, +Z direction = -7.8 di Radiation 6 GHz = 8.4 % o-po. power +Z direction (di -5 5 agi Antenna (sim Antenna Power Gain Radiation Efficiency 5 Radiation efficiency (% Freqency (GHz Freqency (GHz E/EE NKU 8

10 6-GHz On-chip agi Antenna Design (3 Antenna power-gain 6 GHz X-pane Z-pane XZ-pane 7 35 X Z Z X Power-Gain (di = [ Directive-Gain (di ] [ Radiation-Efficiency (% ] E co-po. (di E cross-po. (di f X-pane Z-pane XZ-pane (GHz Max. Min. Avg. Max. Min. Avg. Max. Min. Avg E/EE NKU 9

11 6-GHz an andpass Fiter Design E/EE NKU

12 E/EE NKU 6-GHz On-chip an andpass Fiter Design ( [] feed strctre[3]: Upper path: sin cos cos( sin sin sin( cos cos sin( cos sin cos( j j j jz D A Lower path: cos sin cos( sin sin sin( cos cos sin( sin cos cos( j j j jz D A Transmission matrix of feed strctre: D D D D A A A A D A ( ( ( (

13 E/EE NKU 6-GHz On-chip an andpass Fiter Design ( feed θ + θ π (haf-waveength cos j D A Z L j S / cos Z L j S / cos 8 phase difference

14 6-GHz On-chip an andpass Fiter Design (3 J-inverter Port Unbaanced Port Z θ θ Z Z θ + θ θ 3 θ 3 Z o, Z e θ 3 θ 3 θ θ Z Z Port aanced Port Port 3 M9 M Via aanced Port Port Port 3 Port Z X G-S-G PAD Unbaanced Port J-inverter Magnitde (d S(, S(, S(3, Freqency (GHz Simated haracteristics of 6-GHz MOS an andpass Fiter f c 6 GHz Retrn oss (S > d Insertion oss (S 3. 6 GHz (excding 3-d power spit Insertion oss (S GHz (excding 3-d power spit Ampitde imbaance ±.3 d (57-64 GHz Phase imbaance ± 5 (57-64 GHz 3-d FW 3 % E/EE NKU 3

15 Integration of On-hip agi Antenna With an andpass Fiter E/EE NKU 4

16 TSM 9-nm MOS Process: Diver, Director, and M9 M 6-GHz On-chip agi-an-fiter Top Meta Mtipe Dieectric Layers M 9 M 8 M 7 M 6 M 5 M 4 M 3 M M Poy Lossy Sbstrate Symbo Vae (μm Symbo Vae (μm Symbo Vae (μm Symbo Vae (μm L chip 56 W chip 44 G cope W cope 4 L Dir 8 L Dri 49 W 75 W 6 G ant 5 W ant L 4 W PAD 5 E/EE NKU 5

17 Simation Rests: 6-GHz On-chip agi-an-fiter ( aanced crrent distribtion on agi driven eement E/EE NKU 6

18 VSWR Simation Rests: 6-GHz On-chip agi-an-fiter ( omparison of the VSWR between antenna with/withot ban bandpass fiter 5 4 agi Antenna (sim. aig+an-fiter GHz 5 6 GHz GHz Freqency (GHz agi antenna: VSWR 5 88 GHz agi-ban-fiter: VSWR GHz The antenna bandwidth becomes narrower after integrating with the ban bandpass fiter E/EE NKU 7

Simation Rests: Radiation Power-Gain Pattern (3 X X-pane Z-pane XZ-pane Z Z 35-45 35-45 35-45 -5-5 -5 7 - -5 - -5-9 7 - -5 - -5-9 7 - -5 - -5-9 X 5 35 5 35 5 35 8 8

(di f X-pane Z-pane XZ-pane (GHz Max. Min. Avg. Max. Min. Avg. Max. Min. Avg. 57 -.9 -.3-7. -.8-3.5 -.4 -.9-3.3-6. 6 -. -8.9-5.3 -. -34.5-9.5 -. -.7-4.6 64 -. -7.

19 Simation Rests: Radiation Power-Gain Pattern (3 X X-pane Z-pane XZ-pane Z Z X onsidering the insertion oss of the ban-fiter Power-Gain (di = [ Directive-Gain (di ] [ Radiation-Efficiency (% ] E co-po. (di E cross-po. (di f X-pane Z-pane XZ-pane (GHz Max. Min. Avg. Max. Min. Avg. Max. Min. Avg E/EE NKU 8

20 hip Micrograph 6-GHz MOS Integrated On-hip agi Antenna And an andpass Fiter (TSM 9-nm MOS Process hip Layot hip Micrograph hip size =.6.44 mm E/EE NKU 9

21 Probe-Station On-Wafer Measrement VSWR, Antenna Power-Gain and Radiation Pattern E/EE NKU

22 On-wafer Measrement: VSWR / Retrn Loss (S On-wafer measrement setp: Agient 67-GHz PNA series network anayzer ascade Probe station ascade G-S-G probes with a pitch of μm Measre VSWR/S of the on-chip agi-ban-fiter E836A PNA Microwave Probe E/EE NKU

23 On-wafer Measrement: Antenna Power-Gain ( The power-gain was measred with the techniqe presented in [4] and [5] Two identica on-chip antennas: a transmitting antenna & a receiving antenna Friis Power Transmission Forma: P ( dm P ( dm G ( d G ( d r t PL(d G t & G r : power-gain of transmitting & receiving antenna P t & P r : transmitted & received power PL: free-space path oss t r [4] H.-R. hang, L.-K. eh, P.-. Ko, K.-H. Tsai, H.-L. e, 6-GHz miimeter-wave MOS integrated on-chip antenna and bandpass fiter" IEEE Trans. on Eectron Devices, vo. 58, no. 7, pp , Jy. [5] R. N. Simons and R. Q. Lee, On-wafer characterization of miimeter-wave antennas for wireess appications, IEEE Trans. Microw. Theory Tech., vo. 47, no., pp. 9-96, Jan E/EE NKU

24 On-wafer Measrement: Antenna Power-Gain ( Free-space consideration: P ( dm P ( dm G ( d G ( d PL( d r t t G t & G r : power-gain of the transmitting/receiving antenna P t & P r : transmitted and received power r PL: (free-space path oss, PL( d og og( R f R km GHz Assme the two antennas are identica G t = G r = G Separated distance R shod be satisfied with the far-fied condition [] D R far (P r / P t (d = direct transmission coefficient, S (d from the vector network anayzer S ( d ( P P ( d G( d PL( r t d []. Hang and K. oye, Antennas From Theory to Practice, John Wiey and Sons Ltd, 8. E/EE NKU 3

25 E/EE NKU 4 On-wafer Measrement: Antenna Power-Gain (3 Metaic grond-pane consideration: Path oss with perfect panar grond pane modified PL forma [4][5] og 4 og ( R h R jk r jk r jk PE e h R R R r e r e d PL 4, * h R h h R r R r ] ( ( [ ( d PL d S d G PE

26 On-wafer Measrement: Antenna (Power-Gain Pattern ( E/EE NKU 5

27 On-wafer Measrement: Antenna (Power-Gain Pattern ( According to the Friis power transmission forma [5] P ( dm P ( dm L L G ( d PL G ( d r t p t P t : the otpt power of the PSG P r : the receiving power, which is measred by the PSA L: cabe 6 GHz L p : microwave probe 6 GHz G t : power-gain of the transmitting antenna (agi-ban-fiter G r : power-gain of the receiving antenna (horn antenna PL: the path 6 GHz (in free space The distance R between the on-chip antenna and the horn antenna shod be satisfied with the far-fied condition [] R R D D far r ( y measring the receiving power (P r, the power-gain of the agi-ban-fiter (G t for each ange can be obtained. E/EE NKU 6

28 Simation and Measrement Rests E/EE NKU 7

29 VSWR VSWR The measred VSWR GHz Inpt VSWR / Retrn Loss (S 5 Simation Measrment 5 Simation Measrment Freqency (GHz Freqency (GHz E/EE NKU 8

30 Antenna Power-Gain Simated and measred antenna power-gains are basicay in reasonabe compiance Measred +Z direction: GHz ( > -4 di within GHz (onsidering the insertion oss of the ban bandpass fiter Antenna power +Z direction (di X Z - R = mm -5-3 Simation Measrement Freqency (GHz X Z R = mm On-chip antenna On-chip antenna Acryic Sheet Metaic pate (perfect grond pane E/EE NKU 9

Pattern measrement is in progress Antenna (Power-Gain Pattern E444A 3 Hz - 6.

PSG Anaog Signa Generator IF inpt LO otpt 97 V 5-75 GHz Harmonic Mixer Z

31 Pattern measrement is in progress Antenna (Power-Gain Pattern E444A 3 Hz GHz PSA Series Spectrm Anayzer Microwave Probe Station E857D 5 khz 67 GHz PSG Anaog Signa Generator IF inpt LO otpt 97 V 5-75 GHz Harmonic Mixer Z Microwave Probe V-band Horn Antenna Rotate in Z-pane E/EE NKU 3

32 [6] IEEE JS [7] IEEE RFIT [8] NRSI [4] IEEE ED This work (meas. Type AM-Antenna AM-Antenna AM -Antenna (Patch Antenna (agi + PW Fiter Antenna (agi + an-fiter Performance omparison Tech. MOS 9-nm Freq. (GHz VSWR Max. Power Gain (di 6 < -. Antenna Radiation Efficiency (% 9.6 (sim. MOS.8-μm 6 < (sim. MOS.3-μm hip Size (mm.43 (antenna 6 < -7.3 N/A 3.5 MOS.8-μm 6 < Antenna+Fiter: -4. (sim. MOS 9-nm 6 < Antenna -7.8 Antenna +an-fiter E/EE NKU 8.4 (sim. [4] H.-R. hang, L.-K. eh, P.-. Ko, K.-H. Tsai, and H.-L. e, 6-GHz miimeter-wave MOS integrated on-chip antenna and bandpass fiter" IEEE Trans. on Eectron Devices, vo. 58, no. 7, pp , Jy. [6] K. Kang, F. Lin, D.-D. Pham, J. rinkhoff,.-h. Heng,. X. Go, and X. ang, A 6-GHz OOK receiver with an on-chip antenna in 9 nm MOS, IEEE J. Soid-State ircits, vo. 45, no. 9, pp. 7 73, Sep.. [7] H. h,. X. Go, F. Lin, X. Q. Shi, Wideband 6GHz on-chip antenna with an artificia magnetic condctor, in 9 IEEE Internationa Symp. On Radio-Freq. Integration Tech. (RFIT 9, Singapore, 9, pp [8]. Peng, M. A. Abdaah, and Z. H, A 6 GHz on-hip Antenna with Meta-materia Strctre, in 8 th Nationa Radio Sccience onf. (NRS, Egypt,, pp

33 oncsion A sccessf integration of a 6-GHz mm-wave on-chip agi antenna and ban bandpass fiter in 9-nm MOS process Fabricated with TSM 9-nm MOS technoogy HFSS FEM-based 3-D f-wave EM sover is sed for simation On-wafer measrement based on microwave probe-station onsider the effect of the metaic pane Modified path oss forma Measred performance of the designed antenna-ban-fiter Meas. VSWR GHz Maximm radiation power-gain is abot GHz Antenna pattern measrement is in progress E/EE NKU 3

34 Reference []. P. Zhang, M. Sm, and L. H. Go, On-chip antennas for 6-GHz radios in siicon technoogy, IEEE Trans. Eectron Devices, vo. 5, no. 7, pp , J. 5. [].-. Hs,.-. hen, and H.-R. hang, A 77-GHz MOS on-chip bandpass fiter with baanced and nbaanced otpts, IEEE Eectron Device Lett., vo. 3, no., pp. 5 7, Nov.. [3]. M. Tsai, S.. Lee, and.. Tsai, Performance of a panar fiter sing a zero-degree feed strctre, IEEE Trans. Microw. Theory Tech., vo. 5, no., pp , Oct.. [4] H.-R. hang, L.-K. eh, P.-. Ko, K.-H. Tsai, H.-L. e, 6-GHz miimeter-wave MOS integrated on-chip antenna and bandpass fiter" IEEE Trans. on Eectron Devices, vo. 58, no. 7, pp , Jy. [5] R. N. Simionsand R. Q. Lee, On-wafer characterization of miimeter wave antennas for wireess appication, IEEE Trans. Microw. Theory Tech., vo. 47, no., pp. 9 96, Jan [6] K. Kang, F. Lin, D.-D. Pham, J. rinkhoff,.-h. Heng,. X. Go, and X. ang, A 6-GHz OOK receiver with an on-chip antenna in 9 nm MOS, IEEE J. Soid-State ircits, vo. 45, no. 9, pp. 7 73, Sep.. [7] H. h,. X. Go, F. Lin, X. Q. Shi, Wideband 6 GHz on-chip antenna with an artificia magnetic condctor, in 9 IEEE Internationa Symp. On Radio-Freq. Integration Tech. (RFIT 9, Singapore, 9, pp [8]. Peng, M. A. Abdaah, and Z. H, A 6 GHz on-hip Antenna with Meta-materia Strctre, in 8 th Nationa Radio Sccience onf. (NRS, Egypt,, pp. 6. [9]. A. aanis, Antenna Theory and Design, 3rd ed. New ork: Wiey, 5. [] S. R. Sanders, Antennas and propagation for wireess commnication systems, New ork: Wiey, 999, ch5, pp []. Hang and K. oye, Antennas From Theory to Practice, John Wiey and Sons Ltd, 8. E/EE NKU 33

35 Thank yo for yor attention! E/EE NKU 34

36 ackp Sides E/EE NKU 35

37 VSWR agi Antenna with apacitance oping ( VSWR:.4 6 GHz Antenna withot coped Antenna with coped - Antenna with coped - Antenna with coped Antenna withot coped Antenna with coped - Antenna with coped - Antenna with coped Freqency (GHz E/EE NKU 36

agi Antenna with apacitance oping ( Antenna radiation power-gain: - di to -8 di @ 6 GHz Directivity: 3.5 di to 3 di @ 6 GHz Radiation efficiency: 3 % to 8.

38 agi Antenna with apacitance oping ( Antenna radiation power-gain: - di to -8 6 GHz Directivity: 3.5 di to 3 6 GHz Radiation efficiency: 3 % to GHz o-poar power gain at +Z direction(di -5 Antenna withot coped Antenna with coped - Antenna with coped - Antenna with coped Freqency (GHz Radiation efficiency (% 4 Antenna withot coped Antenna with coped - Antenna with coped - Antenna with coped Z 4 Antenna withot coped Antenna with coped - Antenna with coped - Antenna with coped - 3 X Freqency (GHz Freqency (GHz o-poar directivity at +Z direction(di E/EE NKU 37

39 E/EE NKU 38 feed strctre. AD matrix of pper path: sin cos cos( sin sin sin( cos cos - sin( cos sin cos( cos sin sin cos cos sin sin cos j j j jz j jz j j jz D A

40 E/EE NKU 39. AD matrix matrix: A D A D and A A D D 3. tota = + tota A A A D D A D D ( ( ( 4. tota AD tota D D D D A A A A D A ( ( ( (

41 Simation Rests: 6-GHz On-chip agi-an-fiter Two-port transmission coefficient S of the integrated antenna-ban-fiter S (d R = mm -9 Sim. S (agi-ban-fiter Sim. S (agi Freqency (GHz E/EE NKU 4

42 Radiation efficiency (% 77-GHz MOS Integrated AM-agi with an-andpass Fiter Radiation efficiency: 6 % 77 GHz Antenna power gain: -.7 di GHz o-po. power +z direction (di 5 Increased more than % -5 - Increased abot 8 di 5 agi antenna + AM agi antenna -5 agi antenna + AM agi antenna Freqency (GHz Freqency (GHz E/EE NKU 4

43 Appendix: Antenna Pattern Measrement Antenna (power-gain pattern measrement is in progress E/EE NKU 4

44 Appendix: Antenna Pattern Measrement Antenna (power-gain pattern measrement is in progress E/EE NKU 43

45 Appendix: Antenna Pattern Measrement Pattern measrement is in progress E/EE NKU 44

46 Appendix: Antenna Pattern Measrement Antenna (power-gain pattern measrement is in progress On-hip agi-an-fiter R = cm V-and Horn Antenna V-and Harmonic Mixer E/EE NKU 45

I.INTRODUCTION. Research Volume 6 Issue 4 - October 31, 2008 [

I.INTRODUCTION. Research Volume 6 Issue 4 - October 31, 2008 [ Research Express@NCKU Volume 6 Issue 4 - October 31, 2008 [ http://research.ncku.edu.tw/re/articles/e/20081031/5.html ] A 60-GHz Millimeter-Wave CPW-Fed Yagi Antenna Fabricated Using 0.18-μm CMOS Technology