Data Sheet AMMC GHz Driver Amplifier. Features. Description. Applications

Transcription

1 AMMC GHz Driver Amplifier Data Sheet Chip Size: 25 x 115 m ( x 45 mils) Chip Size Tolerance: ± m (±.4 mils) Chip Thickness: ± m (4 ±.4 mils) Pad Dimensions: x m (4 ±.4 mils) Description The AMMC-6345 MMIC is a broadband medium power amplifier designed for use in driving stage for transmitters that operate in various frequency bands between GHz and 45GHz. It can be used as a driver stage for the AMMC-6425, 643 and 644 (18-27GHz, 25-32GHz and 37-42GHz) 1W MMIC power amplifiers when linear operation is required. At 4GHz, it provides 24dBm of output power (P-1dB), db of gain, and a 32 dbm output third order intercept (OIP3). The device has input and output matching circuitry for use in 5 environments. The AMMC-6345 integrates a temperature compensated RF power detection circuit that enables power detection of.8v/w at 4GHz. The device operates on 5V for current supply (negative voltage only needed for Vg). It is fabricated in a PHEMT process for exceptional power and gain performance. For improved reliability and moisture protection, the die is passivated at the active areas. Features Wide frequency range: - 45 GHz High gain: db GHz, P-1dB=24 dbm Highly linear: OIP3=32dBm Integrated RF power detector 5. Volt, -.55 Volt, 48mA operation Applications Microwave Radio systems Satellite VSAT and DBS systems LMDS & Pt-Pt mmw Long Haul & 82. WiMax BWA WLL and MMDS loops Can be driver amplifier for the AMMC-64xx power amplifiers NOTE: THESE DEVICES ARE ESD SENSITIVE. THE FOLLOWING PRECAUTIONS ARE STRONGLY RECOMMENDED. ENSURE THAT AN ESD APPROVED CARRIER IS USED WHEN DICE ARE TRANSPORTED FROM ONE DESTINATION TO ANOTHER. PERSONAL GROUNDING IS TO BE WORN AT ALL TIMES WHEN HANDLING THESE DEVICES

2 Absolute Maximum Ratings Symbols Parameters Units Minimum Maximum Notes Vd-Vg Drain to Gate Voltage V 8 Vd Positive Supply Voltage V 5.5 Vg Gate Supply Voltage V Id Drain Current ma TBD 2 PD Power Dissipation W and 3 Pin CW Input Power dbm 23 2 Tch Operating Channel Temp C Tstg Storage Case Temp. C -65 to +155 Tmax Maximum Assembly Temp (3 sec max) C +3 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these limitations will significantly reduce the lifetime of the device. 2. Dissipated power PD is in any combination of DC voltage, Drain Current, input power and power delivered to the load. 3. When operated at maximum PD with a base plate temperature of 85 C, the median time to failure (MTTF) is significantly reduced. 4. These ratings apply to each individual FET. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures (Tj) be maintained at the lowest possible levels. See MTTF vs. Tchannel Temperature Table. AMMC-6345 DC Specifications/Physical Properties [1] Symbol Parameters and Test Conditions Units Min. Typ. Max. Id Drain Supply Current (under any RF power drive and temperature) (Vd=5.V, Vg set for Id typical) ma 48 6 Vg Gate Supply Operating Voltage I d(q) = 48mA V Vp Pinch-off voltage (Vdd=2.5V, Ids=mA) V -1.2 ch-b Thermal Resistance [2] Backside temperature, Tb=25 C C/W 8.2 Notes: 1. Ambient operational temperature T A =25 C unless otherwise noted. 2. Channel-to-backside Thermal Resistance ( ch-b ) = 9. C/W at T channel (T c ) = 7 C as measured using infrared microscopy. Thermal Resistance at backside temperature (T b ) = 25 C calculated from measured data. Thermal Properties Parameter Test Conditions Value Maximum Power Dissipation Tbaseplate = 85 C PD = 3.5W Tchannel = 15 C Thermal Resistance ( jc) Vd = 5V Id = 48mA PD = 2.4W Tbaseplate = 85 C jc = 8.2 C/W Tchannel = 4 C Thermal Resistance ( jc) Under RF Drive Vd = 5V Id = 5mA Pout = 24dBm Pd = 2.3W Tbaseplate = 85 C jc = 8.2 C/W Tchannel = 4 C 2

3 MTTF vs. Tchannel Temperature Operation 6% Confidence Level 9% Confidence Level Point Data R= Tj λ (ФIT) MTTF (hrs) λ (ФIT) MTTF (hrs) λ (ФIT) MTTF (Yrs) E E E E E E E E E E E E E E E E E E E+8 1.E E E E E E E+9 3.8E E+ 7.6E+9 1.7E E+ 3.8E+ 8.8E+ AMMC-6345 RF Specifications [1,2] ( T A = 25 C, V d =5V, I d(q)= 48 ma, Z o =5 ) Symbol Parameters and Test Conditions Units Minimum Typical Maximum Sigma Gain Small-signal Gain [2] db P -1dB Output Power at 1dB Gain Compression dbm P -3dB Output Power at 3dB Gain Compression dbm OIP3 Third Order Intercept Point; dbm 32.8 f=mhz; Pin=-dBm RLin Input Return Loss [2] db RLout Output Return Loss [2] db Isolation Min. Reverse Isolation db Notes: 1. Small/Large -signal data measured in wafer form T A = 25 C. 2. % on-wafer RF test is done at frequency = 25, 3, and 38 GHz. Statistics based on 15 part sample LSL LSL LSL Gain at 3 GHz P-1dB at 3 GHz P-1dB at 38 GHz Typical distribution of Small Signal Gain and Output Based on 15 part sampled over several production lots. 3

4 AMMC-6345 Typical Performances (T A = 25 C, V d =5. V, I D = 48 ma, Z in = Z out = 5 ) NOTE: These measurements are in a 5 test environment Vd=3V S21 [db] 15 Vd=5V S12 [db] S11, and S22 [db] Isolation Figure 1. Typical Gain and Reverse Isolation at Vd= 3V, 4V, and 5V Figure 2. Typical Return Loss (Input and Output) at Vd= 3V, 4V, and 5V P-1 [dbm] P-1(5V) P-1(4V) P-1(3V) Noise Figure [db] Figure 3. Typical Output Power (@P-1dB) and PAE at Vd= 3V, 4V, and 5V Figure 4. Typical Noise Figure IP3 [dbm] Figure 5. Typical Output 3 rd Order Intercept Pt. Pout [dbm], PAE [%] Pout PAE Id - - Pin [dbm] Figure 6. Typical Output Power, PAE, and Total Drain Current versus Input Power at3ghz Id [ma] 4

5 -5 S11_ S11_-4 S11_85-5 S22_ S22_-4 S22_85 S11[dB] S22 [db] Frequency[GHz] Figure 7. Typical S11 over temperature Figure 8. Typical S22 over temperature S21[dB] Figure 9. Typical Gain over temperature S21_ S21_-4 S21_ Frequency[GHz] P-1 [dbm] P-1_85deg P-1_deg P-1_-4deg Figure. Typical One db Compression over temperature 5

6 DET_ R V g V d DET_O RF out Four stage wideband amplifier RF in Figure 11. AMMC-6345 Schematic Figure 12. AMMC-6345 Bond pad locations 6

7 Typical Scattering Parameters [1], (T A = 25 C, V d =5 V, I D = 48 ma, Z in = Z out = 5 ) Freq S11 S21 S12 S22 GHz db Mag Phase db Mag Phase db Mag Phase db Mag Phase E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E Note: 1. Data obtained from on-wafer measurements. 7

8 Typical Scattering Parameters [1], (T A = 25 C, V d =4 V, I D = 48 ma, Z in = Z out = 5 ) Freq S11 S21 S12 S22 GHz db Mag Phase db Mag Phase db Mag Phase db Mag Phase E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E Note: 1. Data obtained from on-wafer measurements. 8

9 Typical Scattering Parameters [1], (T A = 25 C, V d =3 V, I D = 48 ma, Z in = Z out = 5 ) 9 Freq S11 S21 S12 S22 GHz db Mag Phase db Mag Phase db Mag Phase db Mag Phase E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E Note: 1. Data obtained from on-wafer measurements.

10 Biasing and Operation AMMC-6345 has quite flexible drain biasing conditions. Recommended quiescent DC bias condition for optimum power and linearity performances is Vd=5 volts with Vg set for Id=48 ma. For high gain applications, the AMMC-6345 can be biased at Vd=3V. Minor improvements in performance are possible depending on the application. The drain bias voltage range is 3 to 5.5V. A single DC gate supply connected to Vg will bias all gain stages. Muting can be accomplished by setting Vg to the pinch-off voltage Vp. An optional output power detector network is also provided. The differential voltage between the Det-Ref and Det-Out pads can be correlated with the RF power emerging from the RF output port. The detected voltage is given by : V ( Vref V ) Vofs = det Vref where is the voltage at the DET _ R port, V det is a voltage at the DET _ O Vofs port, and is the zero-input-power offset voltage. There are three methods to calculate : Vofs 1. can be measured before each detector measurement (by removing or switching off the power source and measuring ). This method gives an error due to temperature drift of less than.1db/5 C. Vofs 2. can be measured at a single reference temperature. The drift error will be less than.25db. Vofs 3. can either be characterized over temperature and stored in a lookup table, or it can be measured at two temperatures and a linear fit used to calculate at any temperature. This method gives an error close to the method #1. The RF ports are AC coupled at the RF input to the first stage and the RF output of the final stage. No ground wired are needed since ground connections are made with plated through-holes to the backside of the device. Assembly Techniques The backside of the MMIC chip is RF ground. For microstrip applications the chip should be attached directly to the ground plane (e.g. circuit carrier or heatsink) using electrically conductive epoxy [1,2]. For best performance, the topside of the MMIC should be brought up to the same height as the circuit surrounding it. This can be accomplished by mounting a gold plate metal shim (same length and width as the MMIC) under the chip which is of correct thickness to make the chip and adjacent circuit the same height. The amount of epoxy used for the chip and/or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. The ground plain should be free of any residue that may jeopardize electrical or mechanical attachment. The location of the RF bond pads is shown in Figure 12. Note that all the RF input and output ports are in a Ground-Signal configuration. RF connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. A single bond wire is normally sufficient for signal connections, however double bonding with.7 mil gold wire or use of gold mesh is recommended for best performance, especially near the high end of the frequency band. Notes: 1. Ablebond 84-1 LM1 silver epoxy is recommended. 2. Eutectic attach is not recommended and may jeopardize reliability of the device.

11 V g V d.1μf 68pF.1μF Detector_Output V g V d DET_O RFOutput RFI AMMC-6345 RFO RFInput V g V d DET_R.1μF V g (Optional ) 68pF.1μF Detector_Reference Notes: 1mF capacitors on gate and drain lin not shown required. Figure 13. AMMC-6345 Assembly diagram.25 1 Det_R - Det_O [V] Det_R - Det_O [V] Pout[dBm] Figure 14. AMMC-6345 Typical Detector Voltage and Output Power, Freq=4 GHz Ordering Information: AMMC-6345-W = devices per tray AMMC-6345-W5 = 5 devices per tray For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 5-9 Avago Technologies. All rights reserved. Obsoletes EN AV2-48EN - November 12, 9