MDC0531E Common-Drain N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ
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1 MDC531E Common-Drain N-channel Trench MOSFET 3V MDC531E Common-Drain N-Channel Trench MOSFET 3V, 8. A, 2mΩ General Description Features The MDC531E uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. Low R DS(ON) and low gate charge operation with gate voltage as low as 2.5V = 3V = = V R DS(ON) < = V < = 4.5V Applications Unidirectional or Bi-directional Load Switch Lithium-Ion Battery Packs Portable Battery Protection Module 1(D1) 2(S1) 3(S1) 4(G1) D1 D2 8(D2) 7(S2) 6(S2) 5(G2) G1 S1 G2 S2 Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S 3 V Gate-Source Voltage S ±12 V Continuous Drain Current T C=25 o C 8 A T C=7 o C 6.5 A Pulsed Drain Current M 45 A =25 o C 1.7 Power Dissipation (1) P D W =7 o C 1. Junction and Storage Temperature Range, T stg -55~15 o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 75 Thermal Resistance, Junction-to-Case R θjc 6 o C/W 1
2 MDC531E Common-Drain N-channel Trench MOSFET 3V Ordering Information Part Number Temp. Range Package Packing RoHS Status MDC531ET -55~15 o C TSSOP-8 Tube Halogen Free MDC531ER -55~15 o C TSSOP-8 Tape & Reel Halogen Free Electrical Characteristics (Ta =25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 25μA, = V Gate Threshold Voltage (th) =, = 25μA Drain Cut-Off Current SS = 24V, = V μa Gate Leakage Current I GSS = ±V, = V - - μa Drain-Source ON Resistance R DS(ON) = V, = 5.A 17 2 = 4.5V, = 5.A = 2.5V, = 3.A Forward Transconductance g fs = 5V, = 7A S Dynamic Characteristics Total Gate Charge Q g -.7 Gate-Source Charge Q gs = 15V, = 5A, = 4.5V Gate-Drain Charge Q gd Input Capacitance C iss - 87 Reverse Transfer Capacitance C rss = 15V, = V, f = 1.MHz - 5 Output Capacitance C oss Turn-On Delay Time t d(on) Rise Time t r = V, = 15V, R L = 1.25Ω, - 11 Turn-Off Delay Time t d(off) R G = 3Ω - 27 Fall Time t f Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge V SD I S = 1A, = V V V SD I S = 4.5A, = V - 1. V t rr - 24 ns I F = 11.6A, dl/dt = A/μs Q rr - 13 nc nc V mω pf ns Note : 1. Surface mounted FR-4 board with 2oz. Copper. 2
3 R, Reverse Drain Current [A] Normalized Drain-Source On-Resistance r DS(on) Drain Source On-Resistance [mω ], Drain Current[A] Drain-Source On-Resistance[ohm] MDC531E Common-Drain N-channel Trench MOSFET 3V 5..V 4 4.V 2.5V.8 3.V 2.V V 2 2.V.4 3.V.2 4.V , Drain-Source Voltage [V].V Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage =5.A = , Junction Temperature ( ), Gate To Source Voltage [V] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 2 * Notes : =5V 1 15 * Notes =V =125-1 = , Gate-Source Voltge [V] Fig.5 Transfer Characteristics V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3
4 , Gate-Source Voltage [V] Capacitance [F] Z θ JA (t), Thermal Response I (AS), AVALANCHE CURRENT (A) /W MDC531E Common-Drain N-channel Trench MOSFET 3V 8 =15V Note : = 5A 2.n 1.6n C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 6 1.2n C iss p 4.p C oss Notes ; 1. = V 2. f = 1 MHz Q G, Total Gate Charge [nc] C rss. 2 3, Drain-Source Voltage [V] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 2 Operation in This Area is Limited by R DS(on) 1 1s s ms ms s 1 ms DC -1 Notes : 1. T C = 25 o C 2. = 15 o C 3. Single Pulse , Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area t AV, TIME IN AVALANCHE (ms) Fig. Unclamped Inductive Switching Capability 8 D= Notes : 1. Z θ JA (t) =? Max Duty Factor, D=t 1 /t 2 3. M - T C = P DM * Z θ JA (t) single pulse , Ambient Temperature [ ] Fig.11 Maximum Drain Current vs. Case Temperature t 1, Square Wave Pulse Duration [sec] Fig.12 Transient Thermal Response Curve 4
5 P(pk), Peak Transient Power [W] I(pk), Peak Transient Current [A] MDC531E Common-Drain N-channel Trench MOSFET 3V 5 8 Single Pulse R Θ JA =77 /W 4 Single Pulse R Θ JA =77 /W E T 1, Time [sec] 1E T 1, Time [sec] Fig13. Single Pulse Maximum Power Dissipation Fig14. Single Pulse Maximum Peak Current 5
6 MDC531E Common-Drain N-channel Trench MOSFET 3V Physical Dimension TSSOP, 8 Leads Dimensions are in millimeters, unless otherwise specified 6
7 MDC531E Common-Drain N-channel Trench MOSFET 3V Worldwide Sales Support Locations U.S.A Sunnyvale Office 787 N. Mary Ave. Sunnyvale CA 9485 U.S.A Tel : Fax : usasales@magnachip.com U.K Knyvett House The Causeway, Staines Middx, TW18 3BA,U.K. Tel : +44 () Fax : +44 () uksales@magnachip.com China Hong Kong Office Suite 24, Ocean Centre 5 Canton Road, Tsim Sha Tsui Kowloon, Hong Kong Tel : Fax : chinasales@magnachip.com Shenzhen Office Room 183, 18/F International Chamber of Commerce Tower Fuhua Road3 CBD, Futian District, China Tel : Fax : chinasales@magnachip.com Japan Osaka Office 3F, Shin-Osaka MT-2 Bldg Miyahara Yodogawa-Ku Osaka, Japan Tel : Fax : osakasales@magnachip.com Taiwan R.O.C 2F, No.61, Chowize Street, Nei Hu Taipei,114 Taiwan R.O.C Tel : Fax : taiwansales@magnachip.com Shanghai Office Room E, 8/F, Liaoshen International Building 68 Wuzhong Road, (C) 213 Shanghai, China Tel : Fax : chinasales@magnachip.com Korea 891, Daechi-Dong, Kangnam-Gu Seoul, Korea Tel : Fax : ~9 koreasales@magnachip.com DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 7
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