Order code Temperature range Package Packaging. STA517B 0 to 70 C PowerSO36 EPU Tube STA517B13TR 0 to 70 C PowerSO36 EPU Tape and reel
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1 0-V.5-A quad power half bridge Features Low input/output pulse width distortion 0 mω R dson complementary DMOS output stage CMOS-compatible logic inputs Thermal protection Thermal warning output Undervoltage protection Description STA517B is a monolithic quad half-bridge stage in Multipower BCD Technology. The device can be used as dual bridge or reconfigured, by connecting pin CONFIG to pins VDD, as a single bridge with double-current capability or as a half bridge (binary mode) with half-current capability. The device is designed, particularly, to be the output stage of a stereo all-digital high-efficiency amplifier. It is capable of delivering 180 W W into 8-Ω loads with THD = 10% at V CC = 54 V or, in single BTL configuration, 30 W into a 4-Ω load with THD = 10% at V CC = 55 V. PowerSO3 package with exposed pad up The input pins have a threshold proportional to the voltage on pin VL. The STA517B is aimed at audio amplifiers in Hi-Fi applications, such as home theatre systems, active speakers and docking stations. It comes in a 3-pin PowerSO package with exposed pad up (EPU). Table 1. Device summary Order code Temperature range Package Packaging STA517B 0 to 70 C PowerSO3 EPU Tube STA517B13TR 0 to 70 C PowerSO3 EPU Tape and reel January 10 Doc ID Rev 4 1/
2 Introduction STA517B 1 Introduction Figure 1. Application circuit (dual BTL) V CC 1A +V CC +3.3V TH_WAR R57 10K R59 10K C58 IN1A IN1A VL CONFIG FAULT TRI-STATE TH_WAR PROTECTIONS & LOGIC M3 M2 M OUT1A C30 OUT1A GND1A V CC 1B OUT1B C31 L18 22µH C52 330pF R3 C R98 R100 C21 C99 C23 470nF C101 8Ω C µF IN1B IN1B V DD M4 13 OUT1B GND1B L19 22µH V DD 22 C58 C53 C0 IN2A IN2B V SS V SS V CC SIGN V CC SIGN IN2A GND-Reg GND-Clean IN2B 32 REGULATORS M17 M15 M V CC 2A OUT2A C32 OUT2A GND2A V CC 2B OUT2B OUT2B C33 L113 22µH C pF R104 C110 R103 R102 C111 L112 22µH C107 C nF C10 8Ω GNDSUB 1 M14 5 GND2B D00AU1148B 2/14 Doc ID Rev 4
3 Pin description 2 Pin description Figure 2. Pin out VCC_SIGN VCC_SIGN VSS VSS IN2B IN2A IN1B IN1A TH_WARN FAULT TRISTATE CONFIG VL VDD VDD GND_REG GND_CLEAN STA517B SUB_GND OUT2B OUT2B VCC2B GND2B GND2A VCC2A OUT2A OUT2A OUT1B OUT1B VCC1B GND1B GND1A VCC1A OUT1A OUT1A N.C. Table 2. Pin function Pin Name Type Description 1 GND_SUB PWR Substrate ground 2, 3 OUT2B O Output half bridge 2B 4 VCC2B PWR Positive supply 5 GND2B PWR Negative supply GND2A PWR Negative supply 7 VCC2A PWR Positive supply 8, 9 OUT2A O Output half bridge 2A 10, 11 OUT1B O Output half bridge 1B 12 VCC1B PWR Positive supply 13 GND1B PWR Negative supply 14 GND1A PWR Negative supply 15 VCC1A PWR Positive supply 1, 17 OUT1A O Output half bridge 1A 18 N.C. - No internal connection 19 GND_CLEAN PWR Logical ground GND_REG PWR Ground for regulator V DD 21, 22 VDD PWR 5-V regulator referred to ground 23 VL PWR High logical state setting voltage, V L Doc ID Rev 4 3/14
4 Pin description STA517B Table 2. Pin function (continued) Pin Name Type Description 24 CONFIG I 25 I 2 TRISTATE I 27 FAULT O 28 TH_WARN O Configuration pin: 0: normal operation 1: bridges in parallel (OUT1A = OUT1B, OUT2A = OUT2B (If IN1A = IN1B, IN2A = IN2B)) Standby pin: 0: low-power mode 1: normal operation Hi-Z pin: 0: all power amplifier outputs in high impedance state 1: normal operation Fault pin advisor (open-drain device, needs pull-up resistor): 0: fault detected (short circuit or thermal, for example) 1: normal operation Thermal warning advisor (open-drain device, needs pull-up resistor): 0: temperature of the IC >130 C 1: normal operation 29 IN1A I Input of half bridge 1A 30 IN1B I Input of half bridge 1B 31 IN2A I Input of half bridge 2A 32 IN2B I Input of half bridge 2B 33, 34 VSS PWR 5-V regulator referred to +V CC 35, 3 VCC_SIGN PWR Signal positive supply 4/14 Doc ID Rev 4
5 Electrical characteristics 3 Electrical characteristics Table 3. Absolute maximum ratings Symbol Parameter Value Unit V CC_MAX DC supply voltage (pins 4, 7, 12, 15) 0 V V max Maximum voltage on pins 23 to V T j_max Operating junction temperature 0 to 150 C T stg Storage temperature -40 to 150 C Warning: Stresses beyond those listed under Absolute maximum ratings make cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended operating condition are not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. In the real application, power supply with nominal value rated inside recommended operating conditions, may experience some rising beyond the maximum operating condition for short time when no or very low current is sinked (amplifier in mute state). In this case the reliability of the device is guaranteed, provided that the absolute maximum rating is not exceeded. Table 4. Thermal data Symbol Parameter Min Typ Max Unit T j-case Thermal resistance junction to case (thermal pad) C/W T jsd Thermal shut-down junction temperature C T warn Thermal warning temperature C t hsd Thermal shut-down hysteresis C Table 5. Recommended operating conditions Symbol Parameter Min Typ Max Unit V CC Supply voltage for pins PVCCA, PVCCB 10-5 V T amb Ambient operating temperature 0-70 C Doc ID Rev 4 5/14
6 Electrical characteristics STA517B Unless otherwise stated, the test conditions for Table below are V L = 3.3 V, V CC = 50 V and T amb = 25 C Table. Electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit R dson I dss g N g P Power P-channel/N-channel MOSFET R dson Power P-channel/N-channel leakage Idss Power P-channel R dson matching Power N-channel R dson matching I dd = 1 A mω µa I dd = 1 A % I dd = 1 A % Dt_s Low current dead time (static) see Figure 3-10 ns Dt_d High current dead time (dynamic) L = 22 µh, C = 470 nf R L = 8 Ω, I dd = 4.5 A see Figure ns t d ON Turn-on delay time Resistive load ns t d OFF Turn-off delay time Resistive load ns t r Rise time Resistive load see Figure ns t f Fall time Resistive load see Figure ns V IN-High High level input voltage V L / mv V V IN-Low Low level input voltage - V L / mv - - V I IN-H High level input current V IN = V L µa I IN-L Low level input current V IN = 0.3 V µa I -H V Low V High I VCC- I FAULT I VCC-HiZ High level pin input current Low logical state voltage (pins, TRISTATE) (seetable 7) High logical state voltage (pins, TRISTATE) (seetable 7) Supply current from V CC in power down Output current on pins FAULT, TH_WARN with fault condition Supply current from V CC in tristate V L = 3.3 V µa V L = 3.3 V V V L = 3.3 V V V = 0 V ma V pin = 3.3 V ma V TRISTATE = 0 V ma /14 Doc ID Rev 4
7 Electrical characteristics Table. I VCC I OCP V UVP Electrical characteristics (continued) Symbol Parameter Test conditions Min Typ Max Unit Supply current from V CC in operation, both channels switching) Input pulse width = 50% duty, switching frequency =384kHz, no LC filters ma Overcurrent protection threshold Isc (short-circuit A current limit) (1) Undervoltage protection threshold V V OVP Overvoltage protection threshold V t pw_min Output minimum pulse width No load ns 1. See specific application note number: AN1994 Table 7. Threshold switching voltage variation with voltage on pin VL Voltage on pin VL, V L V LOW max V HIGH min Unit V V V Table 8. Pin TRISTATE Logic truth table Inputs as per Figure 4 Transistors as per Figure 4 INxA INxB Q1 Q2 Q3 Q4 Output mode 0 x x Off Off Off Off Hi Z Off Off On On Dump Off On On Off Negative On Off Off On Positive On On Off Off Not used Doc ID Rev 4 7/14
8 Electrical characteristics STA517B 3.1 Test circuits Figure 3. Test circuit OUTxY Vcc Low current dead time = MAX(DTr,DTf) +Vcc (3/4)Vcc (1/2)Vcc (1/4)Vcc Duty cycle = 50% INxY M58 OUTxY DTr R 8Ω DTf t M57 gnd + - V7 = vdc = Vcc/2 D03AU1458 Figure 4. Current dead-time test circuit High Current Dead time for Bridge application = ABS(DTout(A)-DTin(A))+ABS(DTOUT(B)-DTin(B)) +V CC Duty cycle=a DTout(A) Duty cycle=b DTin(A) INxA M58 Q1 OUTxA L7 22µ Iout=4.5A Rload=8Ω Q2 DTout(B) OUTxB L8 22µ Iout=4.5A M4 DTin(B) INxB M57 Q3 C9 470nF C71 470nF C70 470nF Q4 M3 Duty cycle A and B: Fixed to have DC output current of 4.5A in the direction shown in figure D00AU112 8/14 Doc ID Rev 4
9 Power supply and control sequencing 4 Power supply and control sequencing To guarantee correct operation and reliability, the recommended power-on/off sequence as shown in Figure 5 must be followed Figure 5. V Correct power-on/off sequence V cc V cc > V L V L t t IN t V CC must turn on before V L. This prevents uncontrolled current flowing through the internal protection diode connected between V L (logic supply) and V CC (high power supply). which could result in damage to the device. must be released after V L is switched on. An input signal can then be sent to the power stage. Doc ID Rev 4 9/14
10 Applications STA517B 5 Applications Figure below shows a single-blt configuration capable of giving 30 W into a 4-Ω load at 10% THD with V CC = 55 V. This result was obtained using the STA30X+STA50X demo board. Note that a PWM modulator as driver is required. Figure. Typical single-btl configuration for 30 W +3.3V TH_WAR 10K n IN1A IN1B X7R 10K X7R VL GND-Clean GND-Reg V DD V DD CONFIG TH_WAR FAULT TRI-STATE IN1A IN1B IN2A IN2B V SS V SS V CC SIGN N.C OUT1A OUT1A OUT1B OUT1B OUT2A OUT2A OUT2B OUT2B V CC 1A V CC 1B V CC 2A V CC 2B GND1A GND1B 22Ω 1/2W 330pF X7R X7R 12µH 12µH.2 1/2W.2 1/2W FILM FILM 20µF 3V X7R 80nF FILM X7R +3V V CC +3V V CC 4Ω X7R Add. V CC SIGN GNDSUB GND2A GND2B D04AU1545 Figure 7. Typical quad half-bridge configuration V CC1P +V CC +3.3V R57 10K IN1A R59 10K IN1A VL CONFIG FAULT PROTECTIONS & LOGIC M3 M OUTPL OUTPL PGND1P V CC 1N R41 C41 330pF L11 22µH C71 R51 C81 R1 R2 C31 8µF C91 4Ω C21 20µF TH_WAR C58 TRI-STATE TH_WAR 28 M C51 OUTNL C1 L12 22µH R3 C32 8µF IN1B IN1B V DD V DD V SS V SS REGULATORS M OUTNL PGND1N V CC2P R42 C42 330pF C72 R52 C82 R4 C92 4Ω C58 C53 V CCSIGN C0 V CCSIGN IN2A IN2A GND-Reg M17 M OUTPR OUTPR PGND2P V CC 2N R43 C43 330pF L13 22µH C73 R53 C83 R5 R C33 8µF C93 4Ω GND-Clean 19 IN2B IN2B 32 GNDSUB 1 M1 M14 C52 3 OUTNR 2 OUTNR 5 PGND2N D03AU1474 C2 R44 C44 330pF L14 22µH C74 R54 C84 R7 R8 C34 8µF C94 4Ω For more information, refer to the application note AN /14 Doc ID Rev 4
11 Package mechanical data Package mechanical data Figure 8. PowerSO3 exposed pad up outline drawing Doc ID Rev 4 11/14
12 Package mechanical data STA517B Table 9. Symbol PowerSO3 exposed pad up dimensions mm inch Min Typ Max Min Typ Max A A A A a b c D D D E E E E E e e G H h L M N degrees degrees R s degrees degrees In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 12/14 Doc ID Rev 4
13 Revision history 7 Revision history Table 10. Document revision history Date Revision Changes 01-Feb-07 1 Initial release. 19-Mar-07 2 Update to reflect product maturity. 11-Aug-09 3 Updated section Description on cover page. 21-Jan-10 4 Updated title to.5 A on cover page Updated text and figure caption in Chapter 5: Applications on page 10. Doc ID Rev 4 13/14
14 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 10 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Doc ID Rev 4
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Low voltage, low current power 8-bit shift register Features Low voltage power supply down to 3 V 8 constant current output channels Adjustable output current through external resistor Serial data IN/parallel
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Single 8-channel analog multiplexer/demultiplexer Datasheet production data Features Low ON resistance: 125 Ω (typ.) Over 15 V p.p signal-input range for: V DD - V EE = 15 V High OFF resistance: channel
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Low power single inverter gate Features High speed: t PD = 4.3 ns (max.) at V CC = 2.3 V Power down protection on inputs and outputs Balanced propagation delays: t PLH t PHL Operating voltage range: V
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LDFM LDFM5 5 ma very low drop voltage regulator Datasheet production data Features Input voltage from 2.5 to 16 V Very low dropout voltage (3 mv max. at 5 ma load) Low quiescent current (2 µa typ. @ 5
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Application note ST890: a high side switch for PCMCIA and USB applications Introduction The ST890 is a low voltage, P-channel MOSFET power switch, intended for high side load switching applications. Its
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High voltage NPN power transistor Features High voltage capability (450 V V CEO ) Minimum lot-to-lot spread for reliable operation High DC current gain Applications Flyback and forward single transistor
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High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical f t = 20 MHz Fully characterized at 125 o C Applications
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RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT =3 W mith 20dB gain@500 MHz New leadless plastic
More informationSTN High voltage fast-switching PNP power transistor. Features. Application. Description. High voltage capability Very high switching speed
High voltage fast-switching PNP power transistor Features High voltage capability Very high switching speed 4 Application Electronics ballasts for fluorescent lighting Description 1 2 SOT-223 3 The device
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STP90NF03L STB90NF03L-1 N-channel 30V - 0.0056Ω -90A TO-220/I 2 PAK Low gate charge STripFET Power MOSFET General features Type V DSS (@Tjmax) Optimal R DS (on) x Q g trade-off Conduction losses reduced
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Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching
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Low drop - Low supply voltage Low ESR capacitor compatible Feature summary Input voltage from 1.7 to 3.6V Ultra low dropout voltage (130mV typ. at 300mA load) Very low quiescent current (110µA typ. at
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Low voltage 16-Bit, constant current LED sink driver Features Low voltage power supply down to 3V 16 constant current output channels Adjustable output current through external resistor Serial data IN/parallel
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2STN2540 Low voltage fast-switching PNP power bipolar transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in
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N-channel 60V - 0.07Ω - 16A - D 2 PAK STripFET Power MOSFET General features Type V DSS R DS(on) I D STB16NF06L 60V
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BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
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evaluation board Data brief Features Mounted Engineering Model RHF310K1: Rad-hard, 120 MHz, operational amplifier (see RHF310 datasheet for further information) Mounted components (ready-to-use) Material:
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N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type V DSSS R DS(on) max I D 100 V < 0.065 Ω 23 A Exceptional dv/dt capability 100% avalanche tested Application oriented
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STP36NF06 STP36NF06FP N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06 60V
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Low power high speed RS-485/RS-422 transceiver Features Low supply current: 5 ma max -7 V to 12 V common mode input voltage range 70 mv typical input hysteresis Designed for 25 Mbps operation Operate from
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Automotive power Schottky rectifier Datasheet production data Features Very small conduction losses Negligible switching losses Extremely fast switching ECOPACK 2 compliant component AEC-Q101 qualified
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RefTitle1 PD848L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT = 8 W with 13 db gain @ 87
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