MICROWAVE MONOLITHIC INTEGRATED CIRCUITS
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1 MICROWAVE MONOLITHIC INTEGRATED CIRCUITS Providing integrated circuit solutions up to 110 GHz New advanced Surface Mount Technologies & Packaging solutions ======================================================================= VectraWave is a solution provider for integrated electronic in high frequency microwaves and optoelectronic for telecommunications over radio or optical fibre, in the field of civil, security, military market. VectraWave is an independent company, delivering OEM and proprietary Integrated Circuits and System In Package or Multi-Chip- Modules improving performances and costs of communication system equipments, by offering components based on SiGe, GaAs, micro-electronics and packaging advanced technologies. yan.haentjens@vectrawave.com : +33 (0) EuMS 2017
2 Distributed MMIC Amplifier up to 50 GHz P/N Function Format F min (GHz) F max (GHz) P Sat (dbm) P Sat (W) P 1dB (dbm) VWA AA MPA Single Die DC VWA AA LNA Single Die DC VWA AB LNA Single Die DC VWA AC LNA Single Die DC VWA AA LNA Single Die DC VWA AA MPA Single Die VWA AA Laser Driver Single Die DC VWA AA MPA Single Die DC VWA AA MPA Double Die DC VWA AA MPA Single Die DC VWA AA MPA (1) Double Die DC VWA AA MPA (2) Single Die DC VWA AA MPA (3) Single Die DC Gain (db) Vdd (V) Idd (ma) MPA (1) MPA (2) MPA (3) yan.haentjens@vectrawave.com : +33 (0) EuMS 2017 p 2 /8
3 Evaluation board (EVB) for Chip & QFN up to 40GHz VWA AA EVB for VWA AA VWA AA include Bias Tee & DC Block VWA AA EVB for QFN VWA AD VWA AA External Bias Tee & DC Block : +33 (0) EuMS 2017 p 3 /8
4 MMIC Design for system Solution up to 110GHz VWA P/N Function Specification VWA AA Dual Transimpedance amplifier 2,9-3,4_3,7-4,3 GHz - ZT=350 _ 16dB Gain - Pout +10 dbm VWA AA Low Noise Amplifier VWA AA Low Noise Amplifier VWA AA MPA Amplifier 2,5-3,5 GHz - 16dB Gain - Pout +17 dbm 2,9-4,3 GHz -14dB Gain - Pout +15 dbm 2,5-6 GH - 10dB Gain -pout +24 dbm VWA AA VWA AA VWA AA yan.haentjens@vectrawave.com : +33 (0) EuMS 2017 p 4 /8
5 TX/RX MMIC CHIP SET SOLUTION GaAs HPA = 5W, 9W, 10W, 12W, 15W GaN/SiC HPA = 35W VWA AA = DPS 6 Bits /7-13 GHz VWA AA = DAT 5 Bits /DC 18GHz VWA AA = MFC /8-12 GHz VWA LA = LNA /8-12 GHz Chip Set 1: LNA, MFC, HPA (MPA) Chip Set 2: LNA, DPS, DAT, MPA, HPA X Band Design Kit for T/R Die Status P/N Function Frequency Gain/A/PHI P1dB Size (mm) P,E VWA AA Gain Block Amplifier 7 to 13 GHz 13dB 17dBm 2,3X3,0X0,1 P VWA AA Medium Power Amplifier 8 to 13 GHz 22dB 26dBm 3,5X2,9X0,2 P VWA AC Medium Power Amplifier 8 to 12 GHz 22dB 24dBm 2,3X1,8X0,1 P VWA AA High Power Amplifier (2 Stages) 8 to 11GHz 21dB 37dBm 1,4X4,4X0,1 P VWA AA High Power Amplifier (2 Stages) 9 to 11GHz 21dB 39dBm 2,5X4,4X0,1 P VWA AC High Power Amplifier (3 Stages) 7 to 13 GHz 21dB 40dBm 4,1X4,4X0,1 P VWA AA High Power Amplifier (2 Stages) 8.5 to 10.5GHz 17dB 41.7dBm 4,4X3,6X0,1 P VWA AA High Power Amplifier (3 Stages) 8 to 12 GHz 25dB 41dBm 3,9X4,5X0,1 P VWA LA Low Noise Amplifier (NF=1,6dB) 9 to 12 GHz 19dB 10dBm 1,6X1,1X0,1 P VWA AA Low Noise Amplifier (NF=1,1dB) 8 to 12 GHz 32dB 10dBm 2,4X1,56X0,1 P VWA AA 5 Bits Digital Attenuator DC-18GHz 31dB/5 Bits 24dBm 2,4X1,55X0,1 P VWA AA 6 Bits Digital Phase Shifter 7-13 GHz 360 /6 Bits 21dBm 3X2,1X0,1 P VWA AA Multi Function Chip (DPS/DAT) 8 to 12 GHz 20dB 20dBm 4X5X0,1 P yan.haentjens@vectrawave.com : +33 (0) EuMS 2017 p 5 /8
6 QFN SET SOLUTION for T/R Module X Band QFN KIT Evaluation board characteristics Part Number Size (mm) Part Number function Supply Frequencies Pout (SAT) Gain NF VWA XX 4x4-24 L VWA AA X-band MPA 8V / 115mA GHz 23dBm 22dB VWA AA 4x4-24 L VWA AA X-Band MPA 8V / 190mA 8-12GHz 26 dbm 21 db VWA AA 4x4-24 L VWA AA 5 bits/31db attenuator -7.5V / 9mA DC-18GHz 24dBm IL=6dB VWA AA 5x5-24 L VWA AA 360 /6 bits phase shifter -7.5V / 10mA 7-13GHz 21dBm IL=6dB VWA AA 3x3-16 L VWA AA X-band LNA 5V / 70mA 7-13GHz 14.5dBm 18 db 1,6dB VWA XX 7x7-48 L VWA AA X-band MFC 4V/300mA ; -5V/25mA GHz 20dBm 20dB 5dB VWA XX 6x6-28 L Contact Factory X-band HPA 8V / 3A GHz 39dBm 20dB yan.haentjens@vectrawave.com : +33 (0) EuMS 2017 p 6 /8
7 HERMETICAL PACKAGE SOLUTION : +33 (0) EuMS 2017 p 7 /8
8 HIGH POWER AMPLIFIER SSPA SOLUTIONS : +33 (0) EuMS 2017 p 8 /8
Preliminary DATA SHEET VWA Product-Line
VWA 5000063 AA Double TIA 2.9-3.4GHz/3.7-4.3GHz ZT>350 Ohms Features Description The VWA 5000063 AA is a double transimpedance amplifier designed on a 0.15 µm phemt process. The two embedded devices are
Preliminary DATA SHEET VWA Product-Line
VWA 5000054 AA Description The VWA 5000054 AA is a distributed amplifier designed on a 0.15 µm phemt process. The device includes an internal biasing circuit which can be used to feed directly the drain
Preliminary DATA SHEET VWA Product-Line
VWA 0000949 AA 7-13 GHz Low noise amplifier QFN MMIC Features General description The VWA 0000949 AA is a low noise amplifier MMIC operating in the frequency range 7 to 13 GHz. The device is packaged in
VWA ACAA. Features. Description. Applications. Ordering information. Pin out and dimensions (4,5 X 4,1 X 0.10 mm) Functional Block Diagram
VWA-50036-ACAA 8 to 12 GHz 21 db 40 dbm High Power Amplifier MMIC Description Features The VWA-50036-ACAA is a 3 Stages analog High power MMIC amplifier operating in the frequency range 8 to 13 GHz. The
Microwave / Millimeter Wave Products
Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s. c
S Band 7 Bit Digital Attenuator
S Band 7 Bit Digital Attenuator Features Frequency Range: 2.8-3.8 GHz Low Insertion Loss 4 db(typ.) Max. Attenuation of 31.75 db RMS Amplitude Error < 0.3 db Input & Output Return Loss > 12 db 32 Lead
Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +37
AMT-A0246 4 GHz to 8 GHz Broadband LNA with 5 W Protection Limiter Data Sheet Features 4 GHz to 8 GHz Frequency Range +37 dbm (5W) CW Pin survival Gain 28 db Typical Gain Flatness ± 0.6 db Typical 2.2
NDA-310-D 4 GENERAL PURPOSE. Gain Stage or Driver Amplifiers for MWRadio/Optical Designs
7\SLFDO$SSOLFDWLRQV Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers 3URGXFW'HVFULSWLRQ The NDA-310-D GaInP/GaAs HBT MMIC distributed amplifier is a low-cost,
Features. = +25 C, Vdd= 5V, Vgg2= Open, Idd= 60 ma*
v.7 HMCLH AGC AMPLIFIER, - GHz Typical Applications The HMCLH is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C I Test Instrumentation Fiber Optics Functional Diagram Features
Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +20
AMT-A0119 0.8 GHz to 3 GHz Broadband High Power Amplifier W P1dB Data Sheet Features 0.8 GHz to 3GHz Frequency Range Class AB, High Linearity Gain db min 55 db Typical Gain Flatness < ± 1.2 db Typical
1-24 GHz Distributed Driver Amplifier
Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Description The CMD197C4 is a wideband GaAs MMIC driver amplifier housed in a leadless
MMA051PP45 Datasheet. DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier
MMA051PP45 Datasheet DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of
Linear High Power Amplifiers
PRODUCTS Linear High Power Amplifiers Aethercomm designs and manufactures high power class A and AB linear amplifiers to transmit voice, data and video for military systems, wireless customers and industrial
Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +10
AMT-A0091 0.01 GHz to 6 GHz Broadband Low Noise Medium Power Amplifier Data Sheet Features 0.01 GHz to 6 GHz Frequency Range Typical Noise Figure < 1.2 db Typical Gain 45 db Gain Flatness < ± 1.2 db +20
Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]
![Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]](/thumbs/89/98833557.jpg "Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]")
v.91 HMCLCB AMPLIFIER, 1-27 GHz Typical Applications This HMCLCB is ideal for: Features Noise Figure: 2.2 db @ 2 GHz Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation
Advanced Information: AI GHz Low Noise Amplifier. GaAs Monolithic Microwave IC
: AI1801 GaAs Monolithic Microwave IC UMS has developed a two-stage self-biased wide band monolithic Low Noise Amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package. It operates from
PARAMETER TEST CONDITIONS TYPICAL DATA UNITS Frequency Range 5-18 GHz 6-8 GHz GHz. 18 GHz GHz GHz
FEATURES Wide Band: 5 to GHz NF (ext match): 3.4 db @ 6 GHz 3.0 db @ GHz 3.7 db @ GHz P-1dB: 21 dbm OIP3: 29 dbm Gain: 19 db Bias Condition: VDD = 4.5V IDD = 135 ma 50-Ohm On-chip Matching Unconditionally
MMA GHz 1W Traveling Wave Amplifier Data Sheet
Features: Frequency Range:.1 2 GHz P3dB: +29 dbm Gain: 12.5 db Vdd =12 V Ids =5 ma Input and Output Fully Matched to 5 Ω Applications: Fiber optics communication systems Microwave and wireless communication
1.0 6 GHz Ultra Low Noise Amplifier
1.0 6 GHz Ultra Low Noise Amplifier Features Frequency Range: 1.0-6 GHz 0.7 db mid-band Noise Figure 18 db mid band Gain 13dBm Nominal P1dB Bias current : 50mA 0.15-um InGaAs phemt Technology 16-Pin QFN
SERIES LNA LOW NOISE AMPLIFIERS DESCRIPTION. Millimeter-Wave Technology & Solutions
LOW NOISE AMPLIFIERS FEATURES: Wideband coverage Modular compact design Military or commercial units available 2.92, 2.4, 1.85 mm or Waveguide interfaces as required Internal voltage regulation and bias
CMD GHz Distributed Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Vdd Description RFOUT The CMD97 is a wideband GaAs MMIC driver amplifier ideally suited
16-32GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD package
Linear Gain Description GaAs Monolithic Microwave IC in SMD package The is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard phemt process:
AM002535MM-BM-R AM002535MM-FM-R
AM002535MM-BM-R AM002535MM-FM-R December 2008 Rev. 1 DESCRIPTION AMCOM s AM002535MM-BM-R is part of the GaAs MMIC power amplifier series. It has 24 db gain, 34 dbm output power over most of the 0.03 to
2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Ultra wideband performance High linearity High output power Excellent return losses Small die size 2 3 ACG1 ACG2 RFOUT & Vdd Description RFIN 1 The CMD29 is wideband GaAs
20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS
Data Sheet FEATURES Low noise figure: 2 db typical High gain: 25. db typical P1dB output power: 13.5 dbm, 2 GHz to GHz High output IP3: 25.5 dbm typical Die size: 1.39 mm 1..2 mm APPLICATIONS Software
Features. = +25 C, +Vdc = +6V, -Vdc = -5V
v3.7 WIDEBAND LNA MODULE, - 2 GHz amplifiers Typical Applications The Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Industrial Sensors Functional
GaAs, phemt, MMIC, Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049LP5E
ACG ACG ACG FEATURES Low noise figure:. db PdB output power:. dbm PSAT output power: 7. dbm High gain: db Output IP: 9 dbm Supply voltage: VDD = 7 V at 7 ma Ω matched input/output (I/O) -lead, mm mm LFCSP
Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V
v.7 HMCLC Typical Applications The HMCLC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
7-12GHz LNA. GaAs Monolithic Microwave IC. S21 (db)
S21 (db) NF (db) GaAs Monolithic Microwave IC Description The is a monolithic two-stages wide band low noise amplifier circuit. It is self-biased. It is designed for military, space and telecommunication
Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
SHF Communication Technologies AG. Wilhelm-von-Siemens-Str. 23D Berlin Germany. Phone Fax
SHF Communication Technologies AG Wilhelm-von-Siemens-Str. 23D 12277 Berlin Germany Phone +49 30 772051-0 Fax ++49 30 7531078 E-Mail: sales@shf.de Web: http://www.shf.de Datasheet SHF 100 BPP Broadband
SATURNE Microsystems Based on Wide Band Gap Materials for Future Space Transmitting Ultra Wideband Receiving Systems
SATURNE Microsystems Based on Wide Band Gap Materials for Future Space Transmitting Ultra Wideband Receiving Systems A. ZIAEI THALES Research & Technology Research & Technology www.saturne-project.com
HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications
v2.1 Typical Applications The HMC694LP4(E) is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM X-Band Radar Test Equipment Features Wide Gain Control Range: 23 db Single Control Voltage
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC7LP5E POWER AMPLIFIER,.2
Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +37
AMT-A0060 6 GHz to 18 GHz Broadband Low Noise Amplifier with 5W CW Limiter Data Sheet Features 6 GHz to 18 GHz Frequency Range Typical Noise Figure < 2.2 db Typical Gain 25 db Gain Flatness < ± 1.5 db
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.14 AMPLIFIER, 18-4 GHz Typical
2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Ultra wideband performance High linearity High output power Excellent return losses Small die size 2 3 ACG1 ACG2 RFOUT & Vdd Description RFIN 1 The is wideband GaAs MMIC
Features = +5V. = +25 C, Vdd 1. = Vdd 2
v7.11 HMC1LC3 POWER AMPLIFIER, - GHz Typical Applications The HMC1LC3 is ideal for use as a medium power amplifier for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO
MMA M4. Features:
Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:
Features. = +25 C, Vdd 1, 2, 3 = +3V
v.11 HMC6LC AMPLIFIER, 6-2 GHz Typical Applications The HMC6LC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military
CMD170P GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram High output power On-chip detector All positive bias Pb-free RoHs compliant 4x4 QFN package Description The CMD170P4 is a GaAs MMIC driver amplifier housed in a leadless
Features. = +25 C, Vs= +8V to +16V
v2.17 Typical Applications The Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Features Electrical Specifications,
Features. = +25 C, Vdd = 5V
v3.117 HMC1LH5 Typical Applications The HMC1LH5 is a medium PA for: Telecom Infrastructure Military Radio, Radar & ECM Space Systems Test Instrumentation Functional Diagram Features Gain: 5 db Saturated
SHF Communication Technologies AG
SHF Communication Technologies AG Wilhelm-von-Siemens-Str. 23 Aufgang D 12277 Berlin Marienfelde Germany Phone ++49 / 772 05 10 Fax ++49 / 753 10 78 E-Mail: sales@shf.biz Web: http://www.shf.biz Datasheet
Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma
v2.61 Typical Applications This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram Features Low Noise Figure: 2.5 db Gain: 13 db P1dB
Features. The HMC-C072 is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT. = +25 C, Vdc = +7V
amplifiers Typical Applications The is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram Features Ultra Low Phase Noise: -67 dbc/hz @ khz Noise Figure: 4.5 db Gain:
Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma
v2.61 Typical Applications This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram Features Low Noise Figure: 2. db High Gain: 22 db
2-22GHz LNA with AGC. GaAs Monolithic Microwave IC. Performance (db)
Performance (db) GaAs Monolithic Microwave IC Description The is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22GHz. It is designed for a wide range
0.5-20GHz Driver. GaAs Monolithic Microwave IC
CHA422-98F.-2GHz Driver GaAs Monolithic Microwave IC Description The CHA422-98F is a distributed driver amplifier which operates between. and 2GHz. It is designed for a wide range of applications, such
GaAs phemt MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049
ACG ACG ACG FEATURES Low noise figure:. db PdB output power:. dbm PSAT output power: 7. dbm High gain: db Output IP: 9 dbm Supply voltage: VDD = 7 V at 7 ma Ω matched input/output (I/O) -lead mm mm SMT
S-band T/R Control Module
S-band T/R Control Module Features Dual path, Transmit/Receive Operation 6-Bit Digital Attenuator, 6-Bit Digital Phase shifter and high Isolation SPDT Switch Low Insertion loss ~ 9.5dB Switch Isolation
Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]
![Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]](/thumbs/95/123095816.jpg "Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]")
Typical Applications The is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C 3 I Test Instrumentation Fiber Optics Functional Diagram Features P1dB Output Power: + dbm Gain:
MMA R4 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012
Features: Frequency Range: 30KHz 40 GHz P1dB: +22 dbm Vout: 7V p-p @50Ω Gain: 13.5 db Vdd =7 V Ids = 200 ma Input and Output Fully Matched to 50 Ω In 4x4mm QFN package Applications: Fiber optics communication
CMD233C GHz Distributed Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wide bandwidth Single positive supply voltage Low noise figure Pb-free RoHs compliant 4x4 QFN package Description The CMD233C4 is a wideband GaAs MMIC low noise amplifier
Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
![Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V](/thumbs/90/101370216.jpg "Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V")
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
7-12 GHz LNA. GaAs Monolithic Microwave IC in SMD leadless package
S21, input & output return losses (db) NF (db) CHA2110-QDG GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2110-QDG is a monolithic twostages wide band low noise amplifier. It is
Datasheet SHF 100 BPP
SHF Communication Technologies AG Wilhelm-von-Siemens-Str. 23D 12277 Berlin Germany Phone ++49 30 / 772 05 10 Fax ++49 30 / 753 10 78 E-Mail: sales@shf.de Web: http://www.shf.de Datasheet SHF 100 BPP Broadband
CMD158C GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.0 V, T A = 25 o C, F = 11 GHz
Features Functional Block Diagram Broadband performance High output power Low current consumption Single supply voltage: +5.0 V @ 95 ma Pb-free RoHs compliant 4x4 QFN package Description The CMD158C4 is
0.5-20GHz Driver. GaAs Monolithic Microwave IC
Gain, NF / P1dB, Pout WWG A3667A A3688A UMS 667A 688A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Driver Amplifier that operates between 0.5 and 20GHz. It is designed for a wide
Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*
v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use
RFPA2013 Application Note
AN RFMD APPLICATION NOTE RFPA1 Application Note Product Description The RFPA1 is a.w QFN package power amplifier specifically designed for Wireless Infrastructure applications. The RFPA1 is a single-stage
Features. = +25 C, Vdc = +7V
amplifiers Typical Applications The is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram Features Ultra Low Phase Noise: -7 dbc/hz @ khz Noise Figure: 6 db Gain:
GHz Low Noise Amplifier
8.0-12.0 GHz Low Noise Amplifier Features Frequency Range : 8.0-12.0 GHz Low Noise Figure < 1.7 db 26 db nominal gain 12 dbm P 1dB High IP3 Input Return Loss > 10 db Output Return Loss > 10 db DC decoupled
Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]
![Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]](/thumbs/94/119028866.jpg "Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]")
Typical Applications This is ideal for: Features Low Noise Figure: 1.8 db Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram High Gain: 19 db High
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3 4 ACG1 ACG2. Vgg2 2 RFIN. Parameter Min Typ Max Units Frequency Range
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Rev 2. CGY217UH 7-bit X-Band Core Chip DESCRIPTION The CGY217UH is a high performance GaAs MMIC 7 bit Core Chip operating in X-band. It includes a phase shifter, an attenuator, T/R switches, and amplification.
18-40 GHz Low Noise Amplifier
18-40 GHz Low Noise Amplifier AMT2172011 Features Frequency Range: 18-40 GHz Better than 4.5 db Noise Figure Single supply operation DC decoupled Input and Output 10 db Nominal Gain 6dBm Nominal P1dB Input
MMA GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 1 2 3 4 5 32 31 30 29 28 27 26 25 24
CMD119P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.6 V, T A = 25 o C, F=8GHz
Features Functional Block Diagram Ultra low noise figure Low current consumption High gain broadband performance Single supply voltage: +3.6 V @ 3 ma Pb-free RoHs compliant 3x3 QFN package Description
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DC to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC8401
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Small Cell, BTS PA Driver and Control and General-Purpose RF Products FTF-NET-F0480 Mario Bokatius Product Line Manager M A Y. 2 0 1 4 TM External Use Agenda Freescale RF Introduction Cellular & Industrial
CMD132P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.
Features Functional Block Diagram Ultra low noise figure Low current consumption High gain broadband performance Single supply voltage: +3.6 V @ 3 ma Pb-free RoHs compliant 3x3 QFN package Description
NEC / CEL Components. 2.4GHz ZigBee and ISM Band Applications
NEC / CEL Components For 2.4GHz ZigBee and ISM Band Applications 2008 v.6 Components for 2.4 GHz Designs Bluetooth, ZigBee, ISM Band Transmitters SPDT Switches*: upg2214tb/tk upg2030tk upg2179tb upg2158t5k
0.5-4GHz Low Noise Amplifier
.5-4GHz Low Noise Amplifier Features Frequency Range:.5-4 GHz Better than 2.dB Noise Figure Single supply operation db Nominal Gain dbm Nominal P1dB Input Return Loss > db Output Return Loss > db DC decoupled
IMS2013 / UMS. Update on latest MMIC product development. Viaud JP : June 5 th, 2013
IMS2013 / UMS Update on latest MMIC product development Viaud JP : June 5 th, 2013 Ref : Product BU date : June 2013 Outline United Monolithic Semiconductor at a glance Technology portfolio & targeted
CMD GHz Low Noise Amplifier. Functional Block Diagram. Features. Description
33- GHz Low Noise Amplifier Features Functional Block Diagram Ultra low noise performance All positive bias Low current consumption Small die size 2 3 Vgg GB RFIN Vdd RFOUT Description The CMD9 is a highly
Features = +5V. = +25 C, Vdd 1. = Vdd 2
v1.11 HMC51LP3 / 51LP3E POWER AMPLIFIER, 5-1 GHz Typical Applications The HMC51LP3(E) is ideal for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO Driver for HMC Mixers
0.5-4GHz Low Noise Amplifier
ASL P3.5-4GHz Low Noise Amplifier Features Frequency Range:.5-4 GHz Better than 2.dB Noise Figure Single supply operation db Nominal Gain dbm Nominal P1dB Input Return Loss > db Output Return Loss > db
SHF Communication Technologies AG. Wilhelm-von-Siemens-Str. 23D Berlin Germany. Phone Fax
SHF Communication Technologies AG Wilhelm-von-Siemens-Str. 23D 12277 Berlin Germany Phone ++49 30 772 051-0 Fax ++49 30 753 10 78 E-Mail: sales@shf.de Web: http://www.shf.de Datasheet SHF S807 B Linear
HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram
v2.14 Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar Test Equipment Functional Diagram Features Wide Gain Control Range: 1 db Single
Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +10
AMT-A0112 11 GHz to 18 GHz Broadband Low Noise Amplifier Data Sheet Features 11 GHz to 18 GHz Frequency Range Typical Noise Figure < 1.4 db Typical Gain 40 db Gain Flatness < ± 2 db +14 dbm P1dB Internally
Features. Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm
v1.314 Typical Applications Features The is ideal for: Test Instrumentation Microwave Radio & VSAT Telecom Infrastructure Military & Space Fiber optics Functional Diagram P1dB Output Power: +27 dbm Psat
TGA2521-SM GHz Linear Driver Amplifier. Key Features. Measured Performance
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
CTT Technical Proposal
CTT Technical Proposal 6-1 GHz 0 W Power Amplifier (GaAs and GaN approaches) SECTION 1: 6-1 GHz 0 W power amplifiers A) Specification and comparison SECTION 2: GaAs 6-1 GHz Solid State Power Amplifier
Features. = +25 C, Vdd = +10 V, Idd = 350 ma
HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
CMD158P GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.
Features Functional Block Diagram Broadband performance High output power Low current consumption Single supply voltage: +5.0 V @ 95 ma Pb-free RoHs compliant 3x3 QFN package Description The CMD8P3 is
GRF4001. Preliminary. Broadband LNA/Linear Driver GHz. Product Description. Features. Applications
Product Description Features Reference: 3.3V/45mA/2.5 GHz EVB NF: 0.9 db Gain: 15.5 db OIP3: 30.5 dbm OP1dB: 16.5 dbm Flexible Bias Voltage and Current is a broadband low noise gain block designed for
0.5-4 GHz 6-Bit Digital Attenuator
.5-4 GHz 6-Bit Digital Attenuator Features Frequency Range :.5 to 4 GHz 31.5dB Attenuation Range.5dB resolution 4.5 db Insertion loss max. +.4dB Attenuation Error 5Ω Impedance 1 Typical Phase variation.2
CMD GHz Distributed Low Noise Amplifier RFIN
- GHz Distributed Low Noise Amplifier Features Wide bandwidth Single positive supply voltage Low noise figure Small die size Description Applications Wideband communication systems Point-to-point radios
CMD GHz Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Ultra low noise performance High linearity Small die size 2 GB 3 Vgg Vdd 4 RFIN RFOUT Description The CMD63 is a high dynamic range GaAs MMIC low noise amplifier ideally
SDA-3000 GaAs Distributed Amplifier
GaAs Distributed Amplifier RFMD s SDA-3000 is a directly coupled (DC) GaAs microwave monolithic integrated circuit (MMIC) driver amplifier die designed for use as a Mach Zehnder Modulated (MZM) laser driver
3 4 ACG1 ACG2. 2 Vgg2 RFIN. Parameter Min Typ Max Units. Frequency Range DC - 24 GHz. Gain 18 db. Noise Figure 2.5 db. Output P1dB 25 dbm
Features Ultra wideband performance Positive gain slope High output power Low noise figure Small die size Description The CMD44 is wideband GaAs MMIC distributed amplifier die which operates from DC to
VWA Product-Line DATA SHEET VWA AA. Quadruple SOA/BOA Driver. Main Features : Description : Applications : Ordering information:
VWA 0000905 AA Quadruple SOA/BOA Driver Description : The VWA0000905AA is a rack with 4 slots drivers for SOA/BOA optical amplifiers in butterfly package*. Each slot is controlled independently in CW mode