FA3210: ELECTRONIC DEVICES & CIRCUITS

Size: px

Start display at page:

Download "FA3210: ELECTRONIC DEVICES & CIRCUITS"

Juniper Gordon
5 years ago
Views:

1 FA3210: ELECTRONIC DEVICES & CIRCUITS Program: B.Tech ECE Year: II Semester: III L-T-P: Internal Assessment Marks: 64 End Term Marks:36 Total Marks: (IA+ETA) : 100 Credits :4.5 UNIT 1: BIPOLAR JUNCTION TRANSISTORS Transistor as an amplifier, Review of biasing and stabilization, Ebers-Moll model-derivation of currents, Switching Characteristics of Transistors, Low frequency (h-parameter) models and derivation of parameters for CE. Inter-conversion of low frequency models parameter for CC & CB. High frequency (π- parameter) model, CE short circuit current gain, Miller s Theorem, Gainbandwidth product. UNIT 2. FIELD EFFECT TRANSISTORS FET as an amplifier, Biasing of JFET, Hi & Low frequency analysis of FET-Derivation and analysis of parameter for CS. Depletion and Enhancement types of MoSFET, Construction and Working of NMOS & PMOS. UNIT 3. FEEDBACK AND OSCILLATORS CIRCUITS Concepts & Types of feedback, Different topologies of feedback of shunt and series circuits. Effect of feedback on various parameters. Oscillators circuits & Criteria of oscillation. RC-phase shift, Wein- Bridge, Hartley, Colpitt and Crystal Oscillators. UNIT 4. MULTISTAGE AMPLIFIER Types of Coupling (RC & TC), Need for Multistage Amplifier, 2-stage amplifier gain, frequency Analysis, Gain Bandwidth Product (GBW),Darlington Pair, Cascade & Cascode amplifiers. UNIT 5. POWER AMPLIFIER Amplifier Types, Series Fed and Transformer Coupled Class A Amplifier-operation & Circuit Design, Class B, AB, C,D and S-operation & Circuit Design, efficiency, Amplifier Distortion, Push Pull, complimentary symmetry, second harmonic and cross over Distortion, Thermal stability & Heat Sinking. Text Book Learning: 1.Jacob Millman & Christos C. Halkias," Electronic Devices and Circuits" Tata McGraw Hill, Reference Learning: 1. Nandita Das Gupta and Amitava Das Gupta, Semiconductor Devices-Modelling and Technology, Prentice Hall of India, Donald A. Neaman."Semiconductor Physics and Devices" 3rd Edition, Tata McGraw Hill, S Salivahanan, N Suresh Kumar, Electronic Devices and Circuits, 3rd edition, McGraw Hill Publication, P a g e

2 LABORATORY: 1) To verify switching characteristics of BJT. 2) find out % error in various gain & impedance of CE, CB. 3) To find out % error in various gain & impedance of CS in JFET/ MOSFET. 4) To verify characteristics of NMOS & PMOS. 5) To Study Positive and Negative feedback circuit using BJT/FET. 6) To verify and realize RC-Phase Shift, Wein Bridge, Hartley & Colpitts,Crystal Oscillator. 7) To design and verify gain & frequency of Cascade amplifier. 8) To study of Push-Pull amplifiers. 9) To determine the gain & input impedance of Darlington Pair. 10) To Study Class A, transformer coupled amplifiers. *Any two (Value Added) 7 P a g e

3 FA3220 : DIGITAL SYSTEM DESIGN Program: B.Tech ECE Year:I1 Semester: III L-T-P: Internal Assessment Marks: 64 End Term Marks:36 Total Marks: (IA+ETA) : 100 Credits :4.5 UNIT-1: INTRODUCTION Number Systems, Basic & Universal Logic gates, Boolean algebra, Direct Conversion of various base, Negative number representations, Floating point number representation, BCD & EXCESS- 3 arithmetic, Error detecting and correcting codes: Hamming code, parity code, Review and Limitation of K-Map, Quine-Mcclusky Method (Tabular Method). UNIT-2: COMBINATIONAL LOGIC CIRCUITS Characterization of digital circuits: Combinational & Sequential Logic circuit, Design procedure: Adders, Subtractors, Parallel Adder, IC-74LS83 and its applications, Multiplier, Decoder, Encoder, Priority Encoder, Multiplexers, Demultiplexers and their applications, Magnitude Comparators, Code Converters, Parity checker and generator, BCD Adder. UNIT-3: SEQUENTIAL LOGIC CIRCUITS 6 Lectures Latch, Flip-Flops and their conversions, Analysis and Synthesis of Sequential Circuits, Excitation Table & Diagram, Counters: Synchronous & Asynchronous, Shift Registers and their applications, Finite State Machine: Mealy and Moore Models. UNIT-4: MEMORIES Memory Characteristics and operations, Sequential, Random Access-MOS & C-MOS Static and Dynamic Memory elements, Memory organization: One dimensional and Multidimensional Arrangement, Read Only Memory, ROM as a Decoder, Memory Bank, Address Decoding of Memory (Internal & External),PAL,PLA. UNIT-5: LOGIC FAMILIES, HAZARDS & FAULT DETECTIONS Logic Families: Diode, BJT & MOS as a switching element, concept of transfer characteristics, ECL, TTL, I2L, Tri-state, PMOS,NMOS and CMOS logic families- Power Consumption, Gate delay and Figure of merit (SPP),Package density, Comparison of standard logic families, pass transistor Logic, Open Collector and Totem pole output stage for TTL. Static and Dynamic Hazards, Gate Delay, Generation of Spikes, Analysis & illustration of Hazard in Combinational Circuits, fault Detection Techniques: Path Sensitization, Boolean Difference Method, K- Map Method. Text Books Learning: 1. Digital Design, M. Morris Mano and M. D. Ciletti, 4th Edition, Pearson Reference Books Learning: 1. Digital Systems: Principles and Design, Raj Kamal, Pearson 2. Maini, Digital Electronics: Principles and Integrated Circuits, Wiley India. 8 P a g e

4 3. Switching Theory and Finite Automata, Kohavi, TMH Publications. LABORATORY: 1. Implementation of All Logic Gates using Universal gates (NAND & NOR both). 2. Bread-board implementation (Parallel adder, One bit Multiplier, One bit Magnitude comparator, parity checker) 3. Bread-board implementation of any one code converter (i.e. Gray Code, BCD Code, Excess-3, Hex. etc.). 4. Design of shift registers (SISO, SIPO, PIPO, and PISO), up and down counters. 5. Design of Mod-6 types of Asynchronous Counters. 6. Transfer characteristics of TTL and CMOS inverters. 7. Realization of Decoder, Multiplexer, encoder and De-multiplexers using IC To design & Implement PAL. 9. To design & implement PLA. 10. Clock circuit realization using 555, CMOS inverter. *Any two (Value Added) 9 P a g e

5 FA3030: SIGNALS & SYSTEMS Program: B.Tech ECE Year: II Semester: III L-T-P: Internal Assessment Marks: 50 End Term Marks:50 Total Marks: (IA+ETA) : 100 Credits :3.5 A: CONTINUOUS-TIME (CT) SIGNAL AND SYSTEM ANALYSIS UNIT 1: TIME-DOMAIN ANALYSIS OF LTI CT SYSTEMS Properties of Signals, Definition of a CT system, CT system properties, Differential Equation, Impulse response and the convolution integral, Properties of convolution, Differential Equation, System properties in terms of the impulse response, System Response for Complex-Exponential Inputs. UNIT 2: FREQUENCY DOMAIN ANALYSIS OF CT SIGNALS AND LTI SYSTEMS Laplace Transform (LT)- RoC, Properties and Applications. Fourier Series (FS)-Exponential FS and its properties, Fourier Transform (FT): Definition, Relation to Laplace transform and FS, Properties, Examples, Frequency Spectra, Frequency Response of LTI systems, Applications of the Fourier Transform (Ideal Filters, Amplitude Modulation) B: DISCRETE-TIME (DT) SIGNAL AND SYSTEM ANALYSIS UNIT 3: BASIC DT SIGNAL AND SYSTEM CONCEPT 6 Lectures Definition of a DT signal, Sampling Theorem, DT signal properties, Energy vs. Power signals, Periodic vs. Aperiodic, Even and odd signals, Operations on signals, Special signals: Harmonics, Singularity signals; Definition of a DT system, DT system properties. UNIT 4: TIME DOMAIN ANALYSIS OF LTI DT SYSTEMS 6 Lectures Difference equation representation of I/O relationship, Impulse response and the convolution sum, System properties in terms of the impulse response, System response for complex-exponential inputs. UNIT 5: FREQUENCY DOMAIN ANALYSIS OF DT SIGNALS AND SYSTEM Z-transform: Definition, existence and motivation, Evaluation of ZT, Properties, Inverse ZT, LTI System Applications (transfer functions) Fourier transforms of discrete-time signals: Discrete-Time Fourier Series, Discrete-Time Fourier Transform - Definition, Relationship between DTFT and z- transform, Relationship between DTFT and CTFT, Properties, Frequency response of DT LTI systems Textbook Learning: 1. Linear Systems and Signals, B. P. Lathi, Oxford Press, 2nd Edition. Reference Learning: 1. Signals and Systems, Oppenheim and Willsky with Nawab, 2nd Edition, Prentice Hall, Signals and Systems, Tarun kumar Rawat, 1st Edition, Oxford University Press, P a g e

6 FA3020: ELECTROMAGNETIC FIELD THEORY Program: B.Tech ECE Year: II Semester: III L-T-P: Internal Assessment Marks: 50 End Term Marks:50 Total Marks: (IA+ETA) : 100 Credits :3.5 UNIT 1: COORDINATE SYSTEMS AND TRANSFORMATION 6 Lectures Cartesian Coordinates, Circular Cylindrical Coordinates, Spherical Coordinates Vector Calculus: Differential Length, Area and Volume, Line Surface and Volume Integrals, Del Operator, Gradient of a Scalar, Divergence of a Vector and Divergence Theorem, Curl of a Vector and Stoke s Theorem, Laplacian of a Scalar. UNIT 2: ELECTROMAGNETIC WAVE PROPAGATION Faraday s Law, Transformer and Motional Electromotive Forces, Displacement Current, Derivation of Maxwell s Equations For Static and Time-Varying Fields. Differential and integral forms, concept of displacement current. Boundary conditions. UNIT 3: ELECTROMAGNETIC WAVE PROPAGATION APPLICATIONS Electromagnetic Wave Propagation: Wave Propagation in Lossy Dielectrics, Plane Waves in Lossless Dielectrics, Plane Wave in Free Space, Plain Waves in Good Conductors, Power and The Poynting Vector, Reflection of a Plane Wave in a Normal incidence. UNIT 4: TRANSMISSION LINES Transmission Lines: Transmission Line Parameters, Transmission Line Equations, Input Impedance, Standing Wave Ratio and Power, Smith Chart, Some Applications of Transmission Lines. Time & Frequency Domain analysis of Transmission lines. Low loss RF and UHF transmission lines. Distortion-less condition. Transmission line charts-impedance matching. UNIT 5: WAVEGUIDES Wave Guides: Introduction to Planar (Rectangular) Waveguides, Derivation of TE and TM Modes, TEM Mode. Circular Waveguides- Derivation of TE and TM Modes, TEM Mode. Impedance and characteristics impedances. Transmission line analogy for wave guides. Attenuation and factor of wave guides. Dielectric slab wave guides. Resonators Textbooks Learning: 1. Elements of Electromagnetics, M N O Sadiku, Reference Learning: 1. Engineering Electromagnetic, William Hayt, McGraw-Hill, Electromagnetic Fields, K. D. Parsad, Electromagnetic waves and radiating systems. Edward Conrad Jordan, Keith George Balmain. Prentice-Hall, P a g e

7 FA3010: SOLID STATE AND SEMICONDUCTOR THEORY Program: B.Tech ECE Year: II Semester: III L-T-P: Internal Assessment Marks: 50 End Term Marks:50 Total Marks: (IA+ETA) : 100 Credits :3.5 UNIT 1: CRYSTALLOGRAPHY & QUANTUM MECHANICS 0 Crystalline and amorphous solids, system of crystals, symmetry operation, Miller indices, atomic radius, coordination number, atomic packing factor calculation, Inadequacy of classical mechanics, wave and particle duality of radiation, de-broglie concept of matter waves, Heisenberg s uncertainty principle, Schrodinger s wave equation,. Introduction to Dielectrics & Magnetic Materials. UNIT 2: ATOMS AND ELECTRONS. Atomic Spectra. The Bohr Model. Quantum Mechanics. Potential Well Problem. Tunneling. Atomic Structure and the Periodic Table. Bonding Forces and Energy Bands in Solids. Direct and Indirect Semiconductor s. Effective Mass. Intrinsic Material. Extrinsic Material. Electrons and Holes in Quantum Wells. Carrier Concentrations.. Electron and Hole Concentrations at Equilibrium. Temperature Dependence of Carrier Concentrations. Compensation and Space Charge Neutrality. Drift of Carriers in Electric and Magnetic Fields. Conductivity and Mobility. Drift and Resistance of Semiconductor. UNIT 3: EXCESS CARRIERS IN SEMICONDUCT 06 Lectures Carrier Lifetime and Photoconductivity. Direct Recombination of Electrons and Holes. Indirect Recombination; Trapping. Steady State Carrier Generation; Quasi-Fermi Levels. Photoconductive Devices. Diffusion of Carriers. Diffusion Processes. Diffusion and Drift of Carriers; Built-in Fields. Diffusion and Recombination; The Continuity Equation. Steady State Carrier Injection; Diffusion Length. UNIT 4: JUNCTIONS. The Contact Potential. Equilibrium Fermi Levels. Space Charge at a Junction. Forward- and Reverse- Biased Junctions; Steady State Conditions. Qualitative Description of Current Flow at a Junction. Carrier Injection. Reverse Bias. Reverse-Bias Breakdown, The Breakdown Diode. Time Variation of Stored Charge. Reverse Recovery Transient. Switching Diodes. Capacitance of p-n Junctions. The Varactor Diode. Deviations from the Simple Theory. Effects of Contact Potential on Carrier Injection. Recombination and Generation in the Transition Region. Ohmic Losses, Metal-Semiconductor Junctions. Schottky Barriers. Rectifying Contacts. Ohmic Contacts. Typical Schottky Barriers. Heterojunction. UNIT 5: FIELD-EFFECT TRANSISTORS Amplification and Switching. The Junction FET. Pinch-off and Saturation. Gate Control.. The Metal- Semiconductor FET. The GaAs MESFET. The High Electron Mobility Transistor (HEMT). Short Channel Effects. The Metal-Insulator-Semiconductor FET,The Ideal MOS Capacitor. Effects of Real Surfaces. Threshold Voltage. MOS Capacitance-Voltage Analysis. Time- dependent Capacitance Measurements. Current-Voltage Characteristics of MOS Gate Oxides. The MOS Field-Effect 12 P a g e

8 Transistor. Mobility Models. Short Channel MOSFET I-V Characteristics. Control of Threshold Voltage. Substrate Bias Effects. Sub threshold Characteristics. MOSFET Scaling and Hot Electron Effects. Textbooks Learning : 1. Solid State Electronic Devices by Sanjay Banerjee and Ben Streetman, Reference Learning: 1. V. Rajendran and A. Marikani, Material Science, Tata McGraw-Hill, A. S. Sedra & K.C. Smith, Microelectronic Circuits (5/e), Oxford, P a g e

9 EA32F0: NETWORK ANALYSIS & SYNTHESIS Program: B.Tech ECE Year: II Semester: III L-T-P: Internal Assessment Marks: 64 End Term Marks:36 Total Marks: (IA+ETA) : 100 Credits :4.5 UNIT 1. INTRODUCTION TO CONTINUOUS TIME SIGNALS AND SYSTEMS: Basic continuous time signals, unit step, unit ramp, unit impulse and periodic signals with their mathematical representation and characteristics. Waveform synthesis, Analogous System: Linear mechanical elements, force-voltage and force-current analogy, modelling of mechanical and electromechanical systems UNIT 2. GRAPH THEORY: Graph of a Network, definitions, tree, co tree, link, basic loop and basic cut set, Incidence matrix, cut set matrix, Tie set matrix Duality, Loop and Node methods of analysis. Analysis of first and secondorder linear systems by classical method. UNIT 3. NETWORK THEOREMS (APPLICATIONS TO AC NETWORKS): Superposition Theorem, Thevenin s Theorem, Norton s Theorem, maximum power transfer theorem, Concept of Duality. Network Functions : Concept of Complex frequency, Transform Impedances Network functions of one port and two port networks, concept of poles and zeros, properties of driving point and transfer functions, time response and stability from pole zero plot. UNIT 4. TWO PORT NETWORKS: Characterization of LTI two port networks ZY, ABCD, h and g-parameters, reciprocity and symmetry, Inter- relationships between the parameters, inter-connections of two port networks, Ladder and Lattice networks. T & Representation. UNIT 5. NETWORK SYNTHESIS : Positive real function; definition and properties; properties of LC, RC and RL driving point functions, synthesis of LC, RC and RL driving point admittance functions using Foster and Cauer first and second forms. Introduction to active network synthesis. Textbooks Learning : 1. Kuo, Network Analysis & Synthesis, Wiley India 2. ME Van-Valkenberg; Network Analysis, Prentice Hall of India Reference Learning: 1. Jagan, Network Analysis, B S Publication 2. Choudhary D.Roy, Network & Systems, Wiley Eastern Ltd. 3. Donald E.Scott, Introduction to circuit Analysis Mc. Graw Hill 4. B.P. Lathi, Linear Systems & Signals Oxford University Press, P a g e

10 LABORATORY: 1. Verification of Superposition Theorem, Thevenin s Theorem, Norton s theorem, Maximum power transfer theorem 2. To plot frequency response of a series resonant circuit. 3. To plot frequency response of a parallel resonant circuit. 4. To measure input impedance and output impedance of a given two port network. 5. To design a attenuator which attenuate given signal to the desired level. 6. Verification of Superposition Theorem, Thevenin s Theorem, Norton s theorem, Maximum power transfer theorem using Multisim/Pspice. 7. Plot the frequency response of a series resonant circuit using Multisim/Pspice. 8. Plot the frequency response of a parallel resonant circuit using Multisim/Pspice. 9. Measure input impedance and output impedance of a given two port network using Multisim/Pspice Design a attenuator which attenuate given signal to the desired level using Multisim/Pspice. 15 P a g e

11 FA3110- COMPUTER AIDED DESIGN OF ELECTRONICS LAB (CAD+PCB) Program: B.Tech ECE Year: II Semester: III L-T-P: Internal Assessment Marks: 40 End Term Marks:60 Total Marks: (IA+ETA) : 100 Credits : Introduction to PSpice & Orcad. 2. To calculate the ripple factor of Full Wave rectifier with and without filters.( Write a Pspice code) 3. To verify the characteristics of CE amplifier. ( Write a Pspice code) 4. Write a Pspice code for all the logic gates. 5. Write a Pspice code of 2-to-4 decoder 6. Write a Pspice code of 8-to-3 encoder (without and with priority) 7. Write a Pspice code of 8-to-1 multiplexer 8. Write a Pspice code of 4 bit Binary to Gray code converter 9. Write a Pspice code of Multiplexer/ Demultiplexer, comparator 10. Write a Pspice code of Full Adder using 3 modeling styles 11. Write a Pspice code of Flip Flops: SR, D, JK,T ( Asynchronous Reset and Synchronous Reset) 16 P a g e

EC201: ELECTRONIC DEVICES AND CIRCUITS

EC201: ELECTRONIC DEVICES AND CIRCUITS Objectives of the Course: To teach the basic concept of various electronic devices, circuits and their application. To develop ability among students for problem