INTEGRATED CIRCUITS DATA SHEET. TDA W BTL audio amplifier Jun 12. Product specification File under Integrated Circuits, IC01

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1 INTEGRATED CIRCUITS DATA SHEET TDA W BTL audio amplifier File under Integrated Circuits, IC 997 Jun 2

2 FEATURES Flexibility in use Few external components Low saturation voltage of output stage Gain can be fixed with external resistors Standby mode controlled by CMOS compatible levels Low standby current No switch-on/switch-off plops High supply voltage ripple rejection Protected against electrostatic discharge Outputs short-circuit safe to ground, V CC and across the load Thermally protected. GENERAL DESCRIPTION The TDA8543(T) is a one channel audio power amplifier for an output power of 2 W with an 8 Ω load at a 7.5 V supply. The circuit contains a BTL amplifier with a complementary PNP-NPN output stage and standby/mute logic. The TDA8543T comes in a 6 pin SO package and the TDA8543 in a 6 pin DIP package. APPLICATIONS Portable consumer products Personal computers Telephony. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CC supply voltage V I q quiescent current V CC =5V 8 2 ma I stb standby current µa P o output power THD = % R L =8Ω; V CC = 5 V.2 W R L =8Ω; V CC = 7.5 V 2.2 W R L =6Ω; V CC =9V 2. W THD total harmonic distortion P o =.5 W.5 % SVRR supply voltage ripple rejection 5 db ORDERING INFORMATION TYPE PACKAGE NUMBER NAME DESCRIPTION VERSION TDA8543T SO6 plastic small outline package; 6 leads; body width 3.9 mm SOT9- TDA8543 DIP6 plastic dual in-line package; 6 leads (3 mil); long body SOT Jun 2 2

3 BLOCK DIAGRAM IN IN+ V CC R TDA8543 R OUT 2 kω 4 OUT+ SVR kω MODE 3 STANDBY/MUTE LOGIC 3 GND MGK42 Fig. Block diagram. PINNING SYMBOL PIN DESCRIPTION n.c. not connected n.c. 2 not connected MODE 3 operating mode select (standby, mute, operating) SVR 4 half supply voltage, decoupling ripple rejection IN+ 5 positive input IN 6 negative input n.c. 7 not connected n.c. 8 not connected n.c. 9 not connected n.c. not connected OUT negative loudspeaker terminal V CC 2 supply voltage GND 3 ground OUT+ 4 positive loudspeaker terminal n.c. 5 not connected n.c. 6 not connected n.c. n.c. MODE SVR n.c. n.c OUT+ GND TDA8543 IN+ IN n.c. n.c V CC OUT n.c. n.c MGK4 Fig.2 Pin configuration. 997 Jun 2 3

4 FUNCTIONAL DESCRIPTION The TDA8543(T) is a BTL audio power amplifier capable of delivering an output power between and 2 W, depending on supply voltage, load resistance and package. Using the MODE pin the device can be switched to standby and mute condition. The device is protected by an internal thermal shutdown protection mechanism. The gain can be set within a range from 6 db to 3 db by external feedback resistors. Power amplifier The power amplifier is a Bridge Tied Load (BTL) amplifier with a complementary PNP-NPN output stage. The voltage loss on the positive supply line is the saturation voltage of a PNP power transistor, on the negative side the saturation voltage of an NPN power transistor. Mode select pin The device is in standby mode (with a very low current consumption) if the voltage at the MODE pin is >(V CC.5 V), or if this pin is floating. At a MODE voltage level of less than.5 V the amplifier is fully operational. In the range between.5 V and V CC.5 V the amplifier is in mute condition. The mute condition is useful to suppress plop noise at the output, caused by charging of the input capacitor. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CC supply voltage operating.3 +8 V V I input voltage.3 V CC +.3 V I ORM repetitive peak output current A T stg storage temperature non-operating C T amb operating ambient temperature C V psc AC and DC short-circuit safe voltage V P tot total power dissipation SO6.2 W DIP6 2.2 W QUALITY SPECIFICATION In accordance with SNW-FQ-6-E. The number of the quality specification can be found in the Quality Reference Handbook. The handbook can be ordered using the code THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air TDA8543T (SO6) K/W TDA8543 (DIP6) 55 K/W 997 Jun 2 4

5 2.5 P (W) 2. MGK4.5 (2) () T amb ( C) () DIP6. (2) SO6. Fig.3 Power derating curve. V CC (V) R L (Ω) P o (W) () Table P max (W) T amb(max) ( C) SO6 DIP6 CONTINUOUS SINE WAVE DRIVEN Note. At THD = %; BTL. 997 Jun 2 5

6 DC CHARACTERISTICS V CC =5V; T amb =25 C; R L =8Ω; V MODE = V; G = 2 db; measured in test circuit Fig.4; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CC supply voltage operating V I q quiescent current R L = ; note 8 2 ma I stb standby current V MODE =V CC µa V O DC output voltage note V V OUT+ V OUT differential output voltage offset 5 mv I IN+, I IN input bias current 5 na V MODE input voltage mode select operating.5 V mute.5 V CC.5 V standby V CC.5 V CC V I MODE input current mode select < V MODE <V CC 2 µa Notes. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output offset voltage divided by R L. 2. The DC output voltage with respect to ground is approximately.5 V CC. AC CHARACTERISTICS V CC =5V; T amb =25 C; R L =8Ω; f = khz; V MODE = V; G = 2 db; measured in test circuit Fig.4; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT P o output power THD = %; V CC = 5 V; R L =8Ω.2 W V CC = 7.5 V; R L =8Ω 2.2 W V CC = 9 V; R L =6Ω 2. W THD =.5%; V CC = 5 V; R L =8Ω.6.9 W V CC = 7.5 V; R L =8Ω.7 W V CC = 9 V; R L =6Ω.4 W THD total harmonic distortion P o =.5 W.5.3 % G v closed loop voltage gain note 6 3 db Z i differential input impedance kω V no noise output voltage note 2 µv SVRR supply voltage ripple rejection note 3 5 db note 4 4 db V o output voltage in mute condition note 5 2 µv 997 Jun 2 6

7 Notes to the AC characteristics. Gain of the amplifier is 2 R in test circuit of Fig.4. R 2. The noise output voltage is measured at the output in a frequency range from 2 Hz to 2 khz (unweighted), with a source impedance of R S =Ω at the input. 3. Supply voltage ripple rejection is measured at the output, with a source impedance of R S =Ω at the input. The ripple voltage is a sine wave with a frequency of khz and an amplitude of mv (RMS), which is applied to the positive supply rail. 4. Supply voltage ripple rejection is measured at the output, with a source impedance of R S =Ω at the input. The ripple voltage is a sine wave with a frequency between Hz and 2 khz and an amplitude of mv (RMS), which is applied to the positive supply rail. 5. Output voltage in mute position is measured with an input voltage of V (RMS) in a bandwidth of 2 khz, so including noise. TEST AND APPLICATION INFORMATION Test conditions Because the application can be either Bridge Tied Load (BTL) or Single-Ended (SE), the curves of each application are shown separately. The thermal resistance = 55 K/W for the DIP6 envelope; the maximum sine wave power dissipation for T amb =25 C is: = 2.27 W 55 For T amb =6 C the maximum total power dissipation is: =.63 W 55 See the power derating curve illustrated in Fig.3. BTL application T amb =25 C if not specially mentioned, V CC =5V, f = khz, R L =8Ω, G v = 2 db, audio band-pass 22 Hz to 22 khz. The BTL application diagram is shown in Fig.4. The quiescent current has been measured without any load impedance. The total harmonic distortion as a function of frequency was measured with a low-pass filter of 8 khz. The value of capacitor C2 influences the behaviour of the SVRR at low frequencies, increasing the value of C2 increases the performance of the SVRR. The figure of the mode select voltage (V ms ) as a function of the supply voltage shows three areas; operating, mute and standby. It shows, that the DC-switching levels of the mute and standby respectively depends on the supply voltage level. SE application T amb =25 C if not specially mentioned, V CC = 7.5 V, f = khz, R L =4Ω, G v = 2 db, audio band-pass 22 Hz to 22 khz. The SE application diagram is shown in Fig.4. The capacitor value of C3 in combination with the load impedance determines the low frequency behaviour. The total harmonic distortion as a function of frequency was measured with low-pass filter of 8 khz. The value of capacitor C2 influences the behaviour of the SVRR at low frequencies, increasing the value of C2 increases the performance of the SVRR. General remark The frequency characteristic can be adapted by connecting a small capacitor across the feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a small capacitor can be connected in parallel with the feedback resistor; this creates a low-pass filter. 997 Jun 2 7

8 BTL APPLICATION handbook, full pagewidth C µf V in R2 R kω C2 47 µf 56 kω IN 6 IN+ 5 SVR 4 MODE 3 2 TDA OUT OUT+ V CC nf µf R L GND MGK43 Gain = 2 R R Fig.4 BTL application. 5 MGD876 MGK44 I q (ma) THD (%) () (3) (2) V CC (V) 2 2 P o (W) R L =. f = khz, G v =2dB. () V CC = 5 V, R L =8Ω. (2) V CC = 7.5 V, R L =8Ω. (3) V CC = 9 V, R L =6Ω. Fig.5 I q as a function of V CC. Fig.6 THD as a function of P o. 997 Jun 2 8

9 MGK49 2 MGD879 THD (%) SVRR (db) 4 () (3) () (2) 6 (2) (3) f (Hz) f (Hz) 5 P o =.5 W, G v = 2 db. () V CC = 5 V, R L =8Ω. (2) V CC = 7.5 V, R L =8Ω. (3) V CC = 9 V, R L =6Ω. V CC = 5 V, 8 Ω, R s =Ω, V r = mv. () G v =3dB. (2) G v =2dB. (3) G v = 6 db. Fig.7 THD as a function of frequency. Fig.8 SVRR as a function of frequency. 2.5 P o (W) 2 MGK45 2 P (W).5 MGK46.5 () (2) (3) () (2) (3) V CC (V) V CC (V) 2 THD = %. () R L =8Ω. (2) R L =6Ω. (3) R L =25Ω. Fig.9 P o as a function of V CC. () R L =8Ω. (2) R L =6Ω. (3) R L =25Ω. Fig. Worst case power dissipation as a function of V CC. 997 Jun 2 9

10 2 P (W).6 (3) () MGK47 handbook, V halfpage o (V) MGD () (2) (3).8.4 (2) Po (W) 6 2 V ms (V) Sine wave of khz. () V CC = 9 V, R L =6Ω. (2) V CC = 5 V, R L =8Ω. (3) V CC = 7.5 V, R L =8Ω. Band-pass = 22 Hz to 22 khz. () V CC =3V. (2) V CC =5V. (3) V CC =2V. Fig. P as a function of P o. Fig.2 V o as a function of V ms. 6 V ms (V) MGL7 2 standby 8 mute operating 2 VP (V) 6 Fig.3 V ms as a function of V P. 997 Jun 2

11 SE APPLICATION handbook, full pagewidth C µf V in R2 R kω C2 47 µf kω IN 6 IN+ 5 SVR 4 MODE 3 2 TDA OUT OUT+ V CC nf µf C3 47 µf R L GND MGK48 Gain R2 = R Fig.4 SE application. MGD884 MGD885 THD (%) THD (%) () (2) () (3) (2) (3) 2 2 P o (W) f (Hz) 5 f = khz, G v =2dB. () V CC = 7.5 V, R L =4Ω. (2) V CC = 9 V, R L =8Ω. (3) V CC = 2 V, R L =6Ω. P o =.5 W, G v = 2 db. () V CC = 7.5 V, R L =4Ω. (2) V CC = 9 V, R L =8Ω. (3) V CC = 2 V, R L =6Ω. Fig.5 THD as a function of P o. Fig.6 THD as a function of frequency. 997 Jun 2

12 2 SVRR (db) MGD886 2 P o (W).6 MGD () (2) (3) 6 () (2).8 (3) f (Hz) V CC (V) 6 V CC = 7.5 V, R L =4Ω, R s =Ω, V i = mv. () G v =24dB. (2) G v =2dB. (3) G v = db. Fig.7 SVRR as a function of frequency. () THD = %, R L =4Ω. (2) THD = %, R L =8Ω. (3) THD = %, R L =6Ω. Fig.8 P o as a function of V CC..6 P (W).2 MGD888.2 P (W) () (2) MGD889.8 (3).8 () (2) (3) V CC (V) P o (W) () R L =4Ω. (2) R L =8Ω. (3) R L =6Ω. Fig.9 Worst case power dissipation as a function of V CC. () V CC = 7.5 V, R L =4Ω. (2) V CC = 2 V, R L =6Ω. (3) V CC = 9 V, R L =8Ω. Fig.2 P as a function of P o. 997 Jun 2 2

13 handbook, full pagewidth a. Top view. MS kω kω 6 IN µf kω TDA8543 OUT µf 56 kω nf OUT µf +V P b. Component side. MGK4 Fig.2 Printed-circuit board layout (BTL and SE). 997 Jun 2 3

14 PACKAGE OUTLINES DIP6: plastic dual in-line package; 6 leads (3 mil); long body SOT38- D M E seating plane A 2 A L A Z 6 e b b 9 w M c (e ) M H pin index E 8 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. A A 2 () () min. max. b b c D E e e L M E M H Note. Plastic or metal protrusions of.25 mm maximum per side are not included w.254. () Z max OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT38-5G9 MO-AE Jun 2 4

15 SO6: plastic small outline package; 6 leads; body width 3.9 mm SOT9- D E A X c y H E v M A Z 6 9 Q A 2 A (A ) 3 A pin index θ L p 8 L e b p w M detail X mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max..75 A A 2 A 3 b p c D () E () e H () E L L p Q v w y Z Note. Plastic or metal protrusions of.5 mm maximum per side are not included θ.7.3 o 8 o.28.2 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT9-76E7S MS-2AC Jun 2 5

16 SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our IC Package Databook (order code ). DIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 26 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T stg max ). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 3 C it may remain in contact for up to seconds. If the bit temperature is between 3 and 4 C, contact may be up to 5 seconds. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 5 and 3 seconds depending on heating method. Typical reflow temperatures range from 25 to 25 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. WAVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed: A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. The longitudinal axis of the package footprint must be parallel to the solder flow. The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 26 C, and maximum duration of package immersion in solder is seconds, if cooled to less than 5 C within 6 seconds. Typical dwell time is 4 seconds at 25 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to seconds at up to 3 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 27 and 32 C. 997 Jun 2 6

17 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 997 Jun 2 7

18 NOTES 997 Jun 2 8

19 NOTES 997 Jun 2 9

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