Curriculum Vitae. IAN D. GOEPFERT, PhD EE. Education: Experience Summary:

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1 Causey Engineering LLC "Forensic and Investigative Services" PO Box Austin, TX Gerald J. Hietpas, PE Phone & Fax (512) President Curriculum Vitae IAN D. GOEPFERT, PhD EE Dr. Goepfert is an Associate of Causey Engineering, LLC. Causey Engineering has for over 25 years been providing forensic and investigative engineering services and litigation support, specializing in industrial and construction engineering, operations, safety, patents, and regulations. Dr. Goepfert has particular experience in the field of advanced optoelectronics and electronics, aerospace and electrical engineering. Education: TEXAS TECH UNIVERSITY, Lubbock, TX BBA, Finance, Economics & Accounting, 1986 BOSTON UNIVERSITY, Boston, MA MS, Aerospace Engineering, 1992 MS, Electrical Engineering, 1994 PhD, Electrical Engineering, 2000 Experience Summary: Designed R&D facilities for the fabrication, testing, data analysis, and modeling of advanced electronics and optoelectronic devices, circuits and systems. Specific devices include large and small scale integrated circuits (ICs), light emitting diodes (LED), laser diodes (LDs), sensors, discrete power transistors and passive devices. Developed architectural framework models for active and passive devices using multiphysics simulation technologies. Calibrated modeling tools to provide predictive behavior and allow early intervention in development of new microelectronic circuit products. Early adoption and predictive modeling results reduced design experiment count, cycle times and development costs and allowed for early market adoption of products. Reviewed and documented manufacturing process and developed work safety procedures. Provided hands on mentoring on proper use of equipment and handling of chemicals and materials. Provided first aid training to ensure proper protocol in case of accident. Ian Goepfert CV Page 1 of 5

2 Designed and taught university courses in semiconductor device physics and fabrication, microelectronics, electromagnetics and control systems. Technical Skills: Software: Finite Element Analysis (Ansys, Abaqus), LabVIEW, Multi-physics Process and Device Simulator (TCAD, SUPREM, MEDICI), Design of Experiments (DOE), Statistical Process Control (SPC), MATLAB, Mathematica, Silvaco Semiconductor Device Simulator, Origin, HPVEE, FORTRAN, SPICE, Microsoft Office Professional, Microsoft Project Professional, C/C++, Adobe Illustrator, Adobe Photoshop, AutoCad, Windows, and UNIX/LINUX. Hardware: Device Fabrication Systems: Photolithography, Ion Implantation, Thermal Diffusion, Thermal and Electron Beam Metallization, Chemical Vapor Deposition, Molecular Beam Epitaxy, Gas Delivery Systems, Chemical and Physical Etchhing (reactive ion etching), Cryogenics, High Vacuum Systems, and Class 1-10,000 Clean Room Technology. Analytical Instrumentation and Data Acquisition: National Instruments based Feedback Control Systems, IEEE GPIB Computer Controlled Instrumentation Systems, Laser and Optical Spectroscopy Systems, Variable Temperature Hall Effect Measurement Systems, Secondary Ion Mass Spectrometry (SIMS), Scanning Electron Microscopy (SEM), and Tunneling Electron Microscopy (TEM). Work Experience: Causey Engineering LLC, Austin, TX 2013 to Present Forensic Expert: Provide Forensic and investigative work and Expert Witness testimony related to topics mentioned above. Causey Engineering provides engineering analysis, governmental regulation investigation and research, accident reconstruction and litigation support primarily related to industries and patents. Samsung, California and Washington, DC Engineering Consultant: Mentored litigation team on engineering aspects of several patents brought before the United States International Trade Commission (USITC). Analyzed engineering design and operation of wavelength down-conversion light emitting diodes (LEDs). In particular, LED's based on Gallium Nitrie (GaN) that are partially wavelength downconverted to yellow by means of a rare earth doped YAG based phospher. Provided solutions based on sound engineering concepts to reduce risk of patent infringement. Authored expert report, rebuttal report, and gave deposition. Result culminated in cross licensing agreement. University Of Houston, Houston, Texas Research Associate Professor: Provided technical component of Smart Grid Energy Training. Defined, configured and supported advanced monitoring equipment for Mid-Grid laboratory. Managed procurement of equipment for Power Training and Mid-Grid laboratory. Procurement of National Instruments based compact Reconfigurable Input/Output (crio) data acquisition and control systems used in oil & gas and energy generation/distribution industires. Ian Goepfert CV Page 2 of 5

3 Partnered with industry partners in research. Mentored undergraduate and undergraduate students. Engineering Consultant, Maine, Louisiana, and Texas 2006 Present Consultant: Advised legal counsel representing plaintiff of infringement of patent claims. Analyzed defendant s product and identified components of LED based optical emitter/detector data acquisition system that infringed plaintiff s patent. Authored expert report and gave deposition. Judge s claims construction consistent with my expert opinion. Consulted on deep UV LEDs. Applications include true white LEDs based on tricolor phosphor wavelength conversion. Worked on facilities for offshore oil production crew in the Caspian Sea. Fairchild Semiconductor International, S. Portland, Maine Staff Engineer, : Senior Engineer, : Programmed advanced simulation tools for 2D and 3D modeling of CMOS and BiCMOS integrated circuit (IC) and optoelectronic (LED and LD) technologies. Defined experiments (DOE) to optimize device performance and reduce cycle times of new IC and discrete device technologies. Worked on Finite Element (FEA) and Finite Difference (FDM) tools. Integrated tools into integrated circuit innovation and volume manufacturing. Managed the development of legal opinions pertaining to intellectual property issues related to LEDs and patent infringement exposure. Advised in-house ad legal counsel regarding technical strategies. Managed technical expert staff to assess and analyze patents and prior art. Spaulding And Slye Company, Burlington, Massachusetts Senior Corporate Accountant: Managed multi-million dollar corporate consolidation of twelve affiliates. Prepared and analyzed balance sheets, income statements, and sources and uses of funds statement. Managed cash flow performance of major commercial real estate investments. Managed annual audit. Jovian Creations, Hong Kong, China Summers International Trade Analyst: Analyzed import/export Far East trade regulations. Education-Related Experience: Boston University, Boston, Massachusetts Doctor of Philosophy in Electrical Engineering: Research focused on improving efficiency of wide band-gap semiconductors. Applications include high frequency, high temperature, and high power transistor technology, optical detectors, light emitting diodes (LEDs) and laser diodes (LDs) with the ability to produce and detect light from the infra-red through the visible to the deep UV. Ian Goepfert CV Page 3 of 5

4 Boston University, Boston, Massachusetts Master of Science in Electrical Engineering, : Focused on optical and wireless communications, optoelectronic devices, optical gyroscopes and digital signal processing. Master of Science in Aerospace Engineering, : Focused on compressible and incompressible fluid dynamics, advanced materials engineering, advanced mathematical methods, and computational fluid dynamics (CFD). Developed numerical algorithm to visualize 2D incompressible and compressible fluid transport. Professional Memberships: IEEE - Institute of Electrical and Electronics Engineers: Senior Member; Offices held: Director-Houston Consulting Network (2013-Present), Maine Section Chair (2005), Vice- Chair (2004), Secretary (2003), and Senior Member-at-Large (2002). OSA - Optical Society of America: Member AAAS - American Association for the Advancement of Science: Member Cultural And Language Skills: Sixteen years of experience living and interacting in the cultures of Hong Kong (China), Japan, Malaysia, and Indonesia. Speak and write basic Japanese and German. Exposure to French, Malaysian, Indonesian, and Cantonese. Traveled extensively in Europe, Asia, Africa, and the United States. Presentations, Publications: E. Bretschneider, A. Davydov, C. McCreary, L. Wang, T. Anderson, H. P. Maruska, P. E. Norris, I. D. Goepfert, and T. D. Moustakas, ZnS/Si/ZnS Quantum well structures for visible light emission, Materials Research Society Proceedings 405, 295 (1996) T. D. Moustakas, R. P. Vaudo, R. Singh, D. Korakakis, M. Misra, A. Sampath, and I. D. Goepfert, Growth of III-V nitride by ECR-assisted MBE and fabrication of Opto-electronic devices, Silicon Carbide and Related Materials Conference 142, 833 (1996) R. P. Vaudo, I. D. Goepfert, D. M. Beyea, T. J. Frey, and T. D. Moustakas, Characterization of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy, Journal of Applied Physics 79, 2779 (1996) D. Korakakis, A. Sampath, H. M. Ng, G. Morales, I. D. Goepfert, and T. D. Moustakas, Growth and doping of GaN on 6H-SiC by MBE, Material Research Society Proceedings 395, 151 (1996) W. G. Grieshaber, E. F. Schubert, I. D. Goepfert, R. F Karlicek, Jr., M. J. Schurman, and C. Tran, Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices, Journal of Applied Physics 80, 4615 (1996) Ian Goepfert CV Page 4 of 5

5 E. F. Schubert, W. G. Grieshaber, and I. D. Goepfert, Enhancement of deep acceptor activation in semiconductors by superlattice doping, Applied Physics Letters 69, 3737 (1996) E. F. Schubert, I. D. Goepfert, W. G. Grieshaber, and J. M. Redwing, Optical properties of Si-doped GaN, Applied Physics Letters 71, 921 (1997) E. F. Schubert, I. D. Goepfert, and J. M. Redwing, Evidence of compensation centers as origin of yellow luminescence in GaN, Applied Physics Letters 71, 3224 (1997) I. D. Goepfert, E. F. Schubert and J. M. Redwing, Luminescence properties of Si-doped GaN and evidence of compensating defects as the origin of the yellow luminescence, Materials Research Society Proceedings 482, 679 (1997) I. D. Goepfert, E. F. Schubert, A. Osinsky, and P. E. Norris, Demonstration of efficient p- type doping in Al x Ga 1x N/GaN superlattice structures, Electronics Letters 35, 1109 (1999) *I. D. Goepfert, E. F. Schubert, A. Osinsky, and P. E. Norris, Efficient acceptor activation in Al x Ga 1x N/GaN doped superlattices, Materials Research Society Proceedings 595, W (1999) *I. D. Goepfert, E. F. Schubert, A. Osinsky, and P. E. Norris, Efficient acceptor activation in Al x Ga 1x N/GaN doped superlattices, Materials Research Society Internet Journal of Nitride Semiconductor Research 5S1, W3.85 (2000) D. Stocker, I. D. Goepfert, E. F. Schubert, K S. Boutros, and J. M. Redwing, Crystallographic wet chemical etching of p-type GaN, Journal of the Electrochemical Society 147, 763 (2000) I. D. Goepfert, E. F. Schubert, A. Osinsky, and P. E. Norris, Experimental and theoretical study of acceptor activation and transport properties in p-type Al x Ga 1x N/GaN superlattices, Journal of Applied Physics 88, 2030 (2000) S. Leibiger, J. Huber, S. Qazi, P. Frankwicz, and I. D. Goepfert, Automated analysis structures for BiCMOS process simulation, development and verification, IEEE Transactions on Semiconductor Manufacturing 17, 612 (2004) *Same manuscript. The Materials Research Society automatically publishes the annual proceedings (hard copy) in the Internet Journal. Forensic Experience: Cases Worked are 3, Depositions Given is 2, Trial Testimony Given is n/a. United States International Trade Commission, Washington DC, Inv. No. 337-TA-798 o Expert Report, Rebuttal Report, and Deposition provided United States District Court, District of Maine, Civil No P-H o Expert Report and Deposition provided Fairchild Semiconductor In-house o Conducted extensive prior-art search to build non-infringement and invalidity case on patent claims. Use of this CV is prohibited until we have a mutually signed agreement concerning your engagement of Causey Engineering LLC. Pending such, the use of our name is also prohibited, and we reserve the right to accept assignment by others in lieu of your firm. Ian Goepfert CV Page 5 of 5