QI_ Powerex, Inc., Pavilion Lane, Youngwood, Pennsylvania 9 () 9- www.pwrx.com Dual H Module mperes/ olts S NUTS (TYP) F D F J (TYP) C N H B E M H (TYP) G (TYP) R (DEEP) T (SCREWING DEPTH) (NC) K (TYP) L (TYP) U (TYP) P Q Description: Powerex Hs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications. QID (Half-Bridge) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters.. B.. C.9. D.±..±. E.±..±. F.. G.. H.. J.. K.. QIC (Common Emitter) Dimensions Inches Millimeters L.9±..±. M. 9. N.. P.. Q.. R.. S M Metric M T. Min.. Min. U. x.. x.. Dia.. Dia. QIF (Common Collector) Features: - to C Temperature Range % Dynamic Tested % Partial Discharge Tested dvanced Mitsubishi R-Series Chip Technology luminum Nitride (ln) Ceramic Substrate for Low Thermal Impedance Complementary Line-up in Expanding Current Ranges to Mitsubishi H Power Modules Copper Baseplate Creepage and Clearance Meet IEC - Rugged SWSO and RRSO pplications: High oltage Power Supplies Medium oltage Drives Motor Drives Traction // Rev.
Powerex, Inc., Pavilion Lane, Youngwood, Pennsylvania 9 () 9- www.pwrx.com QI_ mperes/ olts bsolute Maximum Ratings, T j = C unless otherwise specified Ratings Symbol QI_ Units Junction Temperature T j - to C Storage Temperature T stg - to C Operating Temperature T jop - to C Collector-Emitter oltage ( GE = ) CES olts Gate-Emitter oltage ( CE = ) GES ± olts Collector Current (T C = C) I C mperes Collector Current (T C = C) I C mperes Peak Collector Current (Pulse) I CM * mperes Diode Forward Current (T C = 99 C) * I F mperes Diode Forward Surge Current (Pulse) * I FM * mperes I t for Diode (t = ms, R =, T j = C) I t k sec Maximum Collector Dissipation (T C = C, Part, T j(max) C) P C Watts Mounting Torque, M Terminal Screws in-lb Mounting Torque, M Mounting Screws in-lb Module Weight (Typical) 9 Grams Isolation oltage (Charged Part to Baseplate, C Hz min.) iso. kolts Partial Discharge Q pd pc ( = RMS, = RMS, f = Hz (cc. to IEC )) Maximum Short-Circuit Pulse Width, t psc µs ( CC, CE CES, GE = +/-, R G(on) = Ω, R G(off) = Ω, T j = C) Electrical Characteristics, T j = C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES CE = CES, GE =. m Gate Leakage Current I GES GE = GES, CE =. µ Gate-Emitter Threshold oltage GE(th) I C = m, CE =... olts Collector-Emitter Saturation oltage CE(sat) I C =, GE =, T j = C. *. olts I C =, GE =, T j = C.. olts I C =, GE =, T j = C. olts Total Gate Charge Q G CC =, I C =, GE =. µc Emitter-Collector oltage * EC I E =, GE =, T j = C.. olts * Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). * Pulse width and repetition rate should be such that device junction temperature rise is negligible. I E =, GE =, T j = C. olts I E =, GE =, T j = C. olts // Rev.
Powerex, Inc., Pavilion Lane, Youngwood, Pennsylvania 9 () 9- www.pwrx.com QI_ mperes/ oltst Electrical Characteristics, T j = C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies nf Output Capacitance C oes GE =, CE =. nf Reverse Transfer Capacitance C res. nf Turn-on Delay Time t d(on) CC =, I C =, ns Rise Time t r GE = +/-, ns Turn-off Delay Time t d(off) R G(on) = Ω, R G(off) = Ω, ns Fall Time t f L S = nh, Inductive Load ns Turn-on Switching Energy E on T j = C, I C =, GE = +/-, mj/p Turn-off Switching Energy E off R G(on) = Ω, R G(off) = Ω, mj/p CC =, L S = nh, Inductive Load Diode Reverse Recovery Time * t rr CC =, I E =, ns Diode Reverse Recovery Charge * Q rr GE = +/-, R G(on) = Ω, * µc Diode Reverse Recovery Energy E rec L S = nh, Inductive Load, T j = C 9 mj/p Stray Inductance (C-E) L SCE nh Lead Resistance Terminal-Chip R CE. mω Thermal and Mechanical Characteristics, T j = C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case * R th(j-c) Q Per. C/W Thermal Resistance, Junction to Case * R th(j-c) D Per FWDi. C/W Contact Thermal Resistance, Case to Fin R th(c-f) Per Module,. C/W Thermal Grease pplied, λ grease = W/mK Clearance Distance in ir (Terminal to Base) d a(t-b). mm Creepage Distance long Surface d s(t-b) mm (Terminal to Base) Clearance Distance in ir d a(t-t) 9 mm (Terminal to Terminal) Creepage Distance long Surface d s(t-t) mm (Terminal to Terminal) * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). * Pulse width and repetition rate should be such that device junction temperature rise is negligible. * T C measurement point is just under the chips. // Rev.
Powerex, Inc., Pavilion Lane, Youngwood, Pennsylvania 9 () 9- www.pwrx.com QI_ mperes/ olts OUTPUT CHRCTERISTICS COLLECTOR-EMITTER STURTION OLTGE CHRCTERISTICS COLLECTOR CURRENT, I C, (MPERES) T j = C GE = 9 9 COLLECTOR-CURRENT, I C, (MPERES) GE = T j = C T j = C COLLECTOR-EMITTER OLTGE, CE, (OLTS) COLLECTOR-EMITTER STURTION OLTGE, CE(sat), (OLTS) TRNSFER CHRCTERISTICS FREE-WHEEL DIODE FORWRD CHRCTERISTICS COLLECTOR-CURRENT, I C, (MPERES) CE = GE T j = C T j = C EMITTER CURRENT, I E, (MPERES) T j = C T j = C GTE-EMITTER OLTGE, GE, (OLTS) EMITTER-COLLECTOR OLTGE, EC, (OLTS) // Rev.
Powerex, Inc., Pavilion Lane, Youngwood, Pennsylvania 9 () 9- www.pwrx.com QI_ mperes/ oltst CPCITNCE, C ies, C oes, C res, (nf).. GE = T j = C f = khz CPCITNCE S. CE C ies C oes C res -. COLLECTOR-EMITTER OLTGE, CE, (OLTS) GTE CHRGE, QG, (μc) GTE-EMITTER OLTGE, GE, (OLTS) - - - CE = I C = T j = C GTE CHRGE S. GE... SWITCHING ENERGY CHRCTERISTICS HLF-BRIDGE SWITCHING ENERGY CHRCTERISTICS SWITCHING ENERGIES, E on, E off, E rec, (mj/pulse) CC = GE = +/- R G(on) = Ω R G(off) = Ω L s = nh T j = C Inductive Load E on E off E rec COLLECTOR CURRENT, I C, (MPERES) SWITCHING ENERGIES, E on, E off, E rec, (mj/pulse) CC = GE = +/- R G(on) = Ω R G(off) = Ω L s = nh T j = C Inductive Load E on E off E rec COLLECTOR CURRENT, I C, (MPERES) // Rev.
Powerex, Inc., Pavilion Lane, Youngwood, Pennsylvania 9 () 9- www.pwrx.com QI_ mperes/ olts REERSE BIS SFE OPERTING RE FREE-WHEEL DIODE REERSE RECOERY SFE OPERTING RE COLLECTOR CURRENT, I C, (MPERES) CC GE = +/- R G(off) = Ω T j = C COLLECTOR EMITTER OLTGE, CES, (OLTS) REERSE RECOERY CURRENT, I rr, (MPERES) CC di/dt = k/µs T j = C EMITTER-COLLECTOR OLTGE, EC, (OLTS) NORMLIZED TRNSIENT THERML IMPEDNCE, Z th(j-c') Z th = R th (NORMLIZED LUE)...... TRNSIENT THERML IMPEDNCE CHRCTERISTICS ( & FWDi) Single Pulse T C = C Per Unit Base = R th(j-c) =. C/W () R th(j-c) =. C/W (FWDi) - - - TIME, (s) Z th(j-c) (t) =Σ n R i i= { -t } exp ( τ ) i R i [K/kW] : -..9.. t i [sec] :.... // Rev.
Powerex, Inc., Pavilion Lane, Youngwood, Pennsylvania 9 () 9- www.pwrx.com QI_ mperes/ oltst Turn-on, Turn-off and Reverse Recovery Test Circuit for QID L S DIODE DIODE + L LOD (µh) L S C = mf CC LOD DRIER R G(on) Ω R G(off) Ω + CS = µf Short Circuit Test Circuit for QID L S SHORT L S C = mf CC LOD DRIER R G(on) Ω R G(off) Ω + CS = µf Notes:. Total stray inductance L S = nh.. Short circuit test is done with a copper bar between upper collector and emitter.. Test temperature is controlled with a heating plate set for + C. // Rev.