July 2 AO34 P-Channel Enhancement Mode Field Effect Transistor General Description The AO34 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features V DS (V) = -3V I D = -4.2 A R DS(ON) < 5mΩ (V GS = -V) R DS(ON) < 65mΩ (V GS = -4.5V) R DS(ON) < 2mΩ (V GS = -2.5V) TO-236 (SOT-23) Top View D G S D G S Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol V DS V GS Maximum -3 ±2 Continuous Drain T A =25 C -4.2 Current A T A =7 C I D -3.5 Pulsed Drain Current B I DM -3 T A =25 C.4 P D Power Dissipation A T A =7 C Junction and Storage Temperature Range T J, T STG -55 to 5 Units V V A W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t s 65 9 C/W R Maximum Junction-to-Ambient A θja Steady-State 85 25 C/W Maximum Junction-to-Lead C Steady-State R θjl 43 6 C/W Alpha & Omega Semiconductor, Ltd.
AO34 Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =-25µA, V GS =V -3 V I DSS Zero Gate Voltage Drain Current V DS =-24V, V GS =V - T J =55 C -5 µa I GSS Gate-Body leakage current V DS =V, V GS =±2V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =-25µA -.7 - -.3 V I D(ON) On state drain current V GS =-4.5V, V DS =-5V -25 A V GS =-V, I D =-4.2A R DS(ON) 42 5 T J =25 C 75 mω 53 65 mω 8 2 mω Static Drain-Source On-Resistance V GS =-4.5V, I D =-4A V GS =-2.5V, I D =-A g FS Forward Transconductance V DS =-5V, I D =-5A 7 S V SD Diode Forward Voltage I S =-A,V GS =V -.75 - V I S Maximum Body-Diode Continuous Current -2.2 A DYNAMIC PARAMETERS C iss Input Capacitance 954 pf C oss Output Capacitance V GS =V, V DS =-5V, f=mhz 5 pf C rss Reverse Transfer Capacitance 77 pf R g Gate resistance V GS =V, V DS =V, f=mhz 6 Ω SWITCHING PARAMETERS Q g Total Gate Charge 9.4 nc Q gs Gate Source Charge V GS =-4.5V, V DS =-5V, I D =-4A 2 nc Q gd Gate Drain Charge 3 nc t D(on) Turn-On DelayTime 6.3 ns t r Turn-On Rise Time V GS =-V, V DS =-5V, R L =3.6Ω, 3.2 ns t D(off) Turn-Off DelayTime R GEN =6Ω 38.2 ns t f Turn-Off Fall Time 2 ns t rr Body Diode Reverse Recovery Time I F =-4A, di/dt=a/µs 2.2 ns Q rr Body Diode Reverse Recovery Charge I F =-4A, di/dt=a/µs.2 nc A: The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The value in any a given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6,2,4 are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd.
AO34 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25. 2. -V -4.5V 8 V DS =-5V -3V 5. 6 -I D (A). -2.5V -I D (A) 4 25 C 5. V GS =-2V 2 25 C... 2. 3. 4. 5. -V DS (Volts) Fig : On-Region Characteristics.5.5 2 2.5 3 -V GS (Volts) Figure 2: Transfer Characteristics 2.8 R DS(ON) (mω) 8 6 4 V GS =-2.5V V GS =-4.5V V GS =-V Normalized On-Resistance.6.4.2 I D =-3.5A, V GS =-4.5V I D =-3.5A, V GS =-V V GS =-2.5V I D =-A 2. 2. 4. 6. 8.. -I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage.8 25 5 75 25 5 75 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature R DS(ON) (mω) 9 7 5 3 9 7 5 3 25 C I D =-2A 25 C 2 4 6 8 -V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -I S (A).E+.E+.E-.E-2.E-3.E-4.E-5 25 C 25 C.E-6..2.4.6.8..2 -V SD (Volts) Figure 6: Body-Diode Characteristics Alpha and Omega Semiconductor, Ltd.
AO34 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 V DS =-5V I D =-4A 4 2 -V GS (Volts) 3 2 Capacitance (pf) 8 6 4 2 C oss C rss C iss 2 4 6 8 2 -Q g (nc) Figure 7: Gate-Charge Characteristics 5 5 2 25 3 -V DS (Volts) Figure 8: Capacitance Characteristics -I D (Amps).... T J(Max) =5 C T A =25 C R DS(ON) limited s s.s DC µs ms ms µs. -V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power (W) 4 3 2 T J(Max) =5 C T A =25 C... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance. D=T on /(T on +T off ) T J,PK =T A +P DM.Z θja.r θja R θja =9 C/W In descending order D=.5,.3,.,.5,.2,., single pulse Single Pulse...... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance P D T on T off Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA SEMICONDUCTOR, INC. SOT-23 Package Data θ SYMBOLS DIMENSIONS IN MILLIMETERS MIN NOM MAX A..25 A.. A2...5 b.35.4.5 C..5.25 D 2.8 2.9 3.4 E E 2.6.4 2.8.6 2.95.8 e.95 BSC e.9 BSC L.4.6 θ 5 8 GAUGE PLANE SEATING PLANE NOTE:. LEAD FINISH: 5 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±. mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY :. mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN SOT-23 PART NO. CODE PART NO. AO34 AO34 CODE A A NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE.
ALPHA & OMEGA SEMICONDUCTOR, INC. SOT-23 Tape and Reel Data SOT-23 Carrier Tape SOT-23 Reel SOT-23 Tape Leader / Trailer & Orientation