August 2 AO348 N-Channel Enhancement Mode Field Effect Transistor General Description The AO348 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for use as a load switch or in PWM applications. Features V DS (V) = V I D = 5.8 A R DS(ON) < 26mΩ (V GS = 4.5V) R DS(ON) < 33mΩ (V GS = 2.5V) R DS(ON) < 42mΩ (V GS =.8V) TO-236 (SOT-23) Top View D G S D G S Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol V DS V GS Maximum ±8 Continuous Drain T A =25 C 5.8 Current A T A =7 C I D 4.9 Pulsed Drain Current B I DM T A =25 C.4 Power Dissipation A P D T A =7 C Junction and Storage Temperature Range T J, T STG -55 to 5 Units V V A W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t s 65 9 C/W R θja Maximum Junction-to-Ambient A Steady-State 85 25 C/W Maximum Junction-to-Lead C Steady-State R θjl 43 6 C/W
AO348 Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =25µA, V GS =V V I DSS Zero Gate Voltage Drain Current V DS =6V, V GS =V T J =55 C 5 µa I GSS Gate-Body leakage current V DS =V, V GS =±8V na V GS(th) Gate Threshold Voltage V DS =V GS I D =25µA.4.6 V I D(ON) On state drain current V GS =4.5V, V DS =5V A V GS =4.5V, I D =5.8A 2.6 26 mω T J =25 C 29.2 36 R DS(ON) Static Drain-Source On-Resistance V GS =2.5V, I D =5A 26.4 33 mω V GS =.8V, I D =4A 33.3 42 mω g FS Forward Transconductance V DS =5V, I D =5A 22 S V SD Diode Forward Voltage I S =A,V GS =V.76 V I S Maximum Body-Diode Continuous Current 2.5 A DYNAMIC PARAMETERS C iss Input Capacitance 7 pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 67 pf C rss Reverse Transfer Capacitance 9 pf R g Gate resistance V GS =V, V DS =V, f=mhz 4 Ω SWITCHING PARAMETERS Q g Total Gate Charge 5.2 nc Q gs Gate Source Charge V GS =4.5V, V DS =V, I D =5.8A nc Q gd Gate Drain Charge 4 nc t D(on) Turn-On DelayTime 6.5 ns t r Turn-On Rise Time V GS =5V, V DS =V, R L =.8Ω, 9 ns t D(off) Turn-Off DelayTime R GEN =6Ω 56.5 ns t f Turn-Off Fall Time 3.2 ns t rr Body Diode Reverse Recovery Time I F =5A, di/dt=a/µs 2 ns Q rr Body Diode Reverse Recovery Charge I F =5A, di/dt=a/µs 7. nc A: The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The value in any a given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6,2,4 are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The SOA curve provides a single pulse rating.
AO348 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 8V 4.5V 2V 6 V DS =5V I D (A) 5 2.5V 3V V GS =.5V I D (A) 2 8 5 2 3 4 5 V DS (Volts) Fig : On-Region Characteristics 4 25 C 25 C.5.5 2 2.5 V GS (Volts) Figure 2: Transfer Characteristics 5.6 R DS(ON) (mω) 4 V GS =.8V V GS =2.5V V GS =4.5V Normalized On-Resistance.4.2 I D =5A V GS =2.5V V GS =.8V V GS =4.5V 5 5 I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage.8 25 5 75 25 5 75 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature R DS(ON) (mω) 6 55 5 45 4 35 25 5 I D =5A 25 C 25 C 2 4 6 8 V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage I S (A).E+.E+.E-.E-2.E-3.E-4.E-5 25 C 25 C..2.4.6.8. V SD (Volts) Figure 6: Body-Diode Characteristics
AO348 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 V DS =V I D =5.8A 8 6 4 V GS (Volts) 3 2 Capacitance (pf) 8 6 4 C oss C rss C iss 2 4 6 8 2 4 6 8 Q g (nc) Figure 7: Gate-Charge Characteristics 5 5 V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps).... T J(Max) =5 C T A =25 C R DS(ON) limited s s.s DC µs ms ms µs. V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power (W) 4 T J(Max) =5 C T A =25 C... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance.. D=T on /(T on +T off ) T J,PK =T A +P DM.Z θja.r θja R θja =9 C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance P D T on T off
SOT-23 Package Data θ SYMBOLS DIMENSIONS IN MILLIMETERS MIN NOM MAX A..25 A.. A2...5 b.35.4.5 C..5.25 D 2.8 2.9 3.4 E E 2.6.4 2.8.6 2.95.8 e.95 BSC e.9 BSC L.4.6 θ 5 8 GAUGE PLANE SEATING PLANE NOTE:. LEAD FINISH: 5 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±. mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY :. mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDATION OF LAND PATTERN P N D L N SOT-23 PART NO. CODE PART NO. CODE AO348 A8 NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE. Rev. A
ALPHA & OMEGA SEMICONDUCTOR, INC. SOT-23 Tape and Reel Data SOT-23 Carrier Tape SOT-23 Reel SOT-23 Tape Leader / Trailer & Orientation