Green 6V 7 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max 23mΩ @ V GS = V 28mΩ @ V GS = 4.V Description and Applications I D max T C = +2 C A 4A This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q, supported up by a PPAP and is ideal for use in: Features Rated to +7 C Ideal for High Ambient Temperature Environments % Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Power Management Driving Solenoids Motor Control Case: TO22 (DPAK) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-STD- Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-2, Method 8 Terminal Connections: See Diagram Weight:.33 grams (Approximate) D Top View D G S Pin Out Top View Equivalent Circuit Ordering Information (Notes 4 & ) Part Number Case Packaging -3 TO22 (DPAK) 2,/Tape & Reel Notes:. EU Directive 2/9/EC (RoHS) & /6/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http:///quality/lead_free.html for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<ppm total Br + Cl) and <ppm antimony compounds. 4. Automotive products are AEC-Q qualified and are PPAP capable. Refer to http:///product_compliance_definitions.html.. For packaging details, go to our website at http:///products/packages.html. Marking Information NH62S YYWW = Manufacturer s Marking NH62S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 6 = 6) WW = Week Code ( to 3) of 7
Maximum Ratings (@T A = +2 C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V DSS 6 V Gate-Source Voltage V GSS ± V Continuous Drain Current (Note 8) V GS = V T C = +2 C I D T C = + C A Pulsed Drain Current (μs pulse, duty cycle = %) I DM 8 A Maximum Body Diode Forward Current (Note 8) I S 4 A Avalanche Current, L =.mh (Note 9) I AS A Avalanche Energy, L =.mh (Note 9) E AS 64 mj Thermal Characteristics (@T A = +2 C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P D 2. W Thermal Resistance, Junction to Ambient (Note 6) Steady State R JA 73 C/W Total Power Dissipation (Note 7) P D 3.7 W Thermal Resistance, Junction to Ambient (Note 7) Steady State R JA 4 Thermal Resistance, Junction to Case (Note 8) R JC.8 C/W Operating and Storage Temperature Range T J, T STG - to +7 C Electrical Characteristics (@T A = +2 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note ) Drain-Source Breakdown Voltage BV DSS 6 - - V V GS = V, I D = μa Zero Gate Voltage Drain Current I DSS - - μa V DS = 6V, V GS = V Gate-Source Leakage I GSS - - ± na V GS = ±V, V DS = V ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) - 3 V V DS = V GS, I D = μa Static Drain-Source On-Resistance R DS(ON) - 3 23 V GS = V, I D = 2A mω - 8 28 V GS = 4.V, I D = 2A Diode Forward Voltage V SD -.7.2 V V GS = V, I S = A DYNAMIC CHARACTERISTICS (Note ) Input Capacitance C iss - 43 - pf V DS = 2V, V GS = V, Output Capacitance C oss - 68 - pf f = MHz Reverse Transfer Capacitance C rss - 69 - pf Gate Resistance R g - 2. - Ω V DS = V, V GS = V, f = MHz Total Gate Charge (V GS = V) Q g -. - nc Total Gate Charge (V GS = 4.V) Q g - 2. - nc Gate-Source Charge Q gs - 4.3 - nc Gate-Drain Charge Q gd -. - nc Turn-On Delay Time t D(ON) - 4.4 - ns Turn-On Rise Time t R - 6. - ns Turn-Off Delay Time t D(OFF) - 4.2 - ns Turn-Off Fall Time t F -.4 - ns Reverse Recovery Time t RR - 2.2 - ns Reverse Recovery Charge Q RR -.2 - nc Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. I AS and E AS rating are based on low frequency and duty cycles to keep T J = +2 C.. Short duration pulse test used to minimize self-heating effect.. Guaranteed by design. Not subject to product testing. V DS = V, I D = A V DD = V, V GS = V, R G = 4.7Ω, I D = A I F = A, di/dt = A/μs 2 of 7
R DS(ON), DRAIN-SOURCE ON-RESISTANCE R ds(on), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE R DS(ON), DRAIN-SOURCE ON-RESISTANCE. V GS = 4.V V DS = V 2. V GS = 4.V 2. V GS = 8V V GS = V. V GS = 3.V T J = 7 o C. T J = o C T J = 2 o C.. V GS = 3.V.. 2 2. 3 V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Output Characteristic T J = 8 o C T J = 2 o C T J = - o C. 2 2. 3 3. 4 V GS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic. 4 2.. V GS = 4.V 2.. V GS = V I D = 2A. 2 4 4 I D, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage 2 4 6 8 2 4 6 8 V GS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 4 2.4 V GS = V T J = o C T J = 7 o C 2.2 2.8 V GS = V, I D = 2A 2.6 T J = 2 o C.4 T J = 8 o C T J = 2 o C T J = - o C.2.8.6 V GS = 4.V, I D = 2A 2 4 4 Figure. Typical On-Resistance vs Drain Current and Temperature 3 of 7.4 - -2 2 7 2 7 T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Temperature
V GS (V) I S, SOURCE CURRENT (A) C J, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-RESISTANCE V GS(TH), GATE THRESHOLD VOLTAGE (V) 4 2.4 2.2 2 2 V GS = 4.V, I D = 2A.8 I D = ma.6 V GS = V, I D = 2A.4.2 I D = µa - -2 2 7 2 7 T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Temperature.8 - -2 2 7 2 7 T J, JUNCTION TEMPERATURE ( ) Figure 8. Gate Threshold Variation vs Junction Temperature 43 V GS = V f = MHz 36 29 C iss 22 C oss 8 T A = 7 o C T A = o C T A = 2 o C T A = 8 o C T A = 2 o C T A = - o C.3.6.9.2. V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current C rss 2 4 4 6 V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Junction Capacitance R DS(ON) Limited 8 6 P W =s P W =ms P W =ms 4 2 V DS = V, I D = A 4 8 2 6 Q g (nc) Figure. Gate Charge. T J(Max) = 7 T C = 2 Single Pulse DUT on Infinite Heatsink V GS = V P W =ms P W =µs P W =µs. V DS, DRAIN-SOURCE VOLTAGE (V) Figure 2. SOA, Safe Operation Area 4 of 7
r(t), TRANSIENT THERMAL RESISTANCE D=. D=.3 D=.7 D=.9. D=. D=.. D=. D=.2 D=. D=Single Pulse R θjc (t) = r(t) * R θjc R θjc =.8 /W Duty Cycle, D = t/t2. E-6 E-.... t, PULSE DURATION TIME (sec) Figure 3. Transient Thermal Resistance of 7
Package Outline Dimensions Please see http:///package-outlines.html for the latest version. TO22 (DPAK) L3 E e b2(2x) E b3 D b(3x) D 7 ± A2 L4.8 Gauge Plane a L A c A H Seating Plane TO22 (DPAK) Dim Min Max Typ A 2.9 2.39 2.29 A..3.8 A2.97.7.7 b.64.88.783 b2.76.4.9 b3.2.46.33 c.4.8.3 D 6. 6. 6. D.2 - - e - - 2.286 E 6.4 6.7 6.8 E 4.32 - - H 9.4.4 9.9 L.4.78.9 L3.88.27.8 L4.64.2.83 a - All Dimensions in mm 2.74REF Suggested Pad Layout Please see http:///package-outlines.html for the latest version. TO22 (DPAK) X Y2 Y Dimensions Value (in mm) C 4.72 X.6 X.632 Y 2.6 Y.7 Y2.7 C Y X 6 of 7
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