PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins High abort circuit rating IGBTs, optimized for motorcontrol G Minimum switching losses combined with low conduction losses E Tightest parameter distribution IGBT co-packaged with ultrafast soft recovery n-channel antiparallel diode Creepage distance increased to 5.35mm Benefits Highest current rating copack IGBT Maximum power density, twice the power handling of the TO-247, less space than TO-264 HEXFRED TM diode optimized for operation with IGBT, to minimize EMI, noise and switching losses Absolute Maximum Ratings IRG4PSC7KD SUPER - 247 PD - 9684A Short Circuit Rated UltraFast IGBT V CES = 6V V CE(on) typ. =.83V @V GE = 5V, I C = 6A Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 85 I C @ T C = C Continuous Collector Current 6 I CM Pulsed Collector Current 2 A I LM Clamped Inductive Load Current 2 I F @ T C = C Diode Continuous Forward Current 5 I FM Diode Maximum Forward Current 2 t sc Short Circuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 2 V P D @ T C = 25 C Maximum Power Dissipation 35 P D @ T C = C Maximum Power Dissipation 4 W T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Thermal Resistance\ Mechanical Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT.36 R θjc Junction-to-Case - Diode.69 C/W R θcs Case-to-Sink, flat, greased surface.24 R θja Junction-to-Ambient, typical socket mount 38 Recommended Clip Force 2.(2.) N (kgf) Weight 6 (.2) g (oz) www.irf.com 5//99
Electrical Characteristics @ (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 6 V V GE = V, I C = 25µA V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage.5 V/ C V GE = V, I C = ma V CE(on) Collector-to-Emitter Saturation Voltage.83 2.3 I C = 6A V GE = 5V 2.2 V I C = A See Fig. 2, 5.8 I C = 6A, T J = 5 C V GE(th) Gate Threshold Voltage 3. 6. V CE = V GE, I C = 25µA V GE(th) / T J Temperature Coeff. of Threshold Voltage -8. mv/ C V CE = V GE, I C =.5mA g fe Forward Transconductance 3 46 S V CE = 5V, I C = 6A I CES Zero Gate Voltage Collector Current 5 µa V GE = V, V CE = 6V 3 ma V GE = V, V CE = 6V, T J = 5 C V FM Diode Forward Voltage Drop.4.7 I C = 6A See Fig. 3 V.3 I C = 6A, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V Switching Characteristics @ (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 34 5 I C = 6A Q ge Gate - Emitter Charge (turn-on) 44 66 nc V CC = 4V See Fig.8 Q gc Gate - Collector Charge (turn-on) 6 24 V GE = 5V t d(on) Turn-On Delay Time 82 t r Rise Time 7 ns t d(off) Turn-Off Delay Time 282 423 I C = 6A, V CC = 48V t f Fall Time 97 46 V GE = 5V, R G = 5.Ω E on Turn-On Switching Loss 3.95 Energy losses include "tail" E off Turn-Off Switching Loss 2.33 mj and diode reverse recovery E ts Total Switching Loss 6.28 7.7 See Fig. 9,,8 t sc Short Circuit Withstand Time µs V CC = 36V, V GE = 5V, R G = 5.Ω, V CPK < 5V t d(on) Turn-On Delay Time 87 T J = 5 C, See Fig.,8 t r Rise Time 4 I C = 6A, V CC = 48V ns t d(off) Turn-Off Delay Time 374 V GE = 5V, R G = 5.Ω t f Fall Time 43 Energy losses include "tail" E ts Total Switching Loss 8.5 mj and diode reverse recovery L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 69 V GE = V C oes Output Capacitance 73 pf V CC = 3V See Fig. 7 C res Reverse Transfer Capacitance 9 ƒ =.MHz t rr Diode Reverse Recovery Time 82 2 ns See Fig. 4 2 4 I F = 6A I rr Diode Peak Reverse Recovery Current 8.2 2 A See Fig. 3 2 5 V R = 2V Q rr Diode Reverse Recovery Charge 364 546 nc See Fig. 84 625 6 di/dt = 2A/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 328 A/µs See Fig. During t b 266 7 2 www.irf.com
LOAD CURRENT (A) 6 45 3 5 Square wave: 6% of rated voltage I For both: Duty cycle: 5% T sink = 9 C Gate drive as specified Power Dissipation = 58 W Ideal diodes. f, Frequency (KHz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) Ic, Collector-to-Emitter Current (A) T J = 5 C V GE = 5V 2µs PULSE WIDTH A 2 3 4 V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T J = 5 C T J = 25 C V CC = 5V 5µs PULSE WIDTH 5 6 7 8 9 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current (A) LIMITED BY PACKAGE 8 6 4 2 V GE = 5V A 25 5 75 25 5 T C, Case Temperature ( C) V CE, Collector-to-Emitter Voltage(V) 3. 2. V GE = 5V 8 us PULSE WIDTH I C = 2 A I C = I C = 6 A 3 A. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ). D =.5.2. t.5.2 t. 2 SINGLE PULSE Notes: (THERMAL RESPONSE). Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc + T C. A.... t, Rectangular Pulse Duration (sec) P DM Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 8 6 4 2 VGE = V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes SHORTED V GE, Gate-to-Emitter Voltage (V) 2 6 2 8 4 V CC = 4V I C = 6A C res V CE, Collector-to-Emitter Voltage (V) 2 3 4 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 4. 2.. 8. V CC = 48V V GE = 5V T = 25 J C I C = 6A Total Switching Losses (mj) R G = 5. Ω V GE = 5V V CC = 48V I C = 2 A I C = I C = 6 A 3 A 6. 2 3 4 5 R G, Gate Resistance ( Ω ) -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Fig. - Typical Switching Losses vs. Resistance Junction Temperature www.irf.com 5 ( Ω )
Total Switching Losses (mj) 24 2 6 2 8 4 R G = 5. Ω T J = 5 C V CC = 48V V GE = 5V I C, Collector Current (A) V GE = 2V T = 25 o J C 3 6 9 2 I C, Collector Current (A) SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA Instantaneous forward current - I F (A) T J = 5 C.4.8.2.6 2. 2.4 Forward Voltage Drop - V FM Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com (V)
2 V R = 2V V R = 2V 6 2 trr- (nc) Irr- ( A) 8 I F = 3A I F = 6A I F = 2A 4 I F = 3A I F = 6A I F = 2A di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (A/µs) Fig. 5 - Typical Recovery Current vs. di f /dt 4 V R = 2V V R = 2V 3 Qrr- (nc) 2 I F = 3A I F = 6A I F = 2A di (rec) M/dt- (A /µs) I F = 3A I F = 6A I F = 2A di f /dt - (A/µs) di f /dt - (A/µs) Fig. 6 - Typical Stored Charge vs. di f /dt Fig. 7 - Typical di (rec)m /dt vs. di f /dt www.irf.com 7
Same type device as D.U.T. +Vge 9% Vge Vce 8% of Vce 43µF D.U.T. Ic % Vce Ic 9% Ic 5% Ic td(off) tf Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t+5µ S Eoff = Vce ic Ic dt dt t t t2 Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt = tx % Ic Vcc td(on) t Vce tr 9% Ic 5% Vce Ipk Ic Vce ie dt t2 Eon = Vce Ic dt t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY W AVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8 www.irf.com
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t t t2 Figure 8e. Macro Waveforms for Figure 8a's Test Circuit V L V * c D.U.T. - 48V R L = 48V 4 X I C @25 C 5V 6µF V Figure 9. Clamped Inductive Load Test Circuit Figure 2. Pulsed Collector Current Test Circuit www.irf.com 9
Notes: Repetitive rating: V GE =2V; pulse width limited by maximum junction temperature (figure 2) V CC =8%(V CES ), V GE =2V, L=µH, R G = 5.Ω (figure 9) ƒpulse width 8µs; duty factor.% Pulse width 5.µs, single shot Current limited by the package, (Die current = A) Case Outline and Dimensions Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, Tel: (3) 322 333 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 883 7322 IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (95) 453 22 IR GERMANY: Saalburgstrasse 57, 635 Bad Homburg Tel: ++ 49 672 9659 IR ITALY: Via Liguria 49, 7 Borgaro, Torino Tel: ++ 39 45 IR FAR EAST: K&H Bldg., 2F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: 8 3 3983 86 IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore 237994 Tel: ++ 65 838 463 IR TAIWAN:6 Fl. Suite D. 27, Sec. 2, Tun Haw South Road, Taipei, 673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/99 www.irf.com