MCR12DSM, MCR12DSN Thyristors Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control; CDI (Capacitive Discharge Ignition); and small engines. Features Small Size Passivated Die Surface for Reliability and Uniformity Low Level Triggering and Holding Characteristics UL Recognized compound meeting flammability rating V-0 ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 00 V Pin Out Functional Diagram 1 2 3 1 2 3 A Additional Information G K Datasheet Resources Samples
Maximum Ratings ( unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off State Voltage (Note 1) (T C = 0 to +110 C, Sine Wave, 50 to 60 Hz, R GK = 1 k Ω) MCR12DSM V DRM / V RRM 600 800 V MCR12DSN On State RMS Current (180º Conduction Angles; T C = 75ºC) I T(RMS) 12 A Average On-State Current (180º Conduction Angles; T C = 75ºC) I T (AV) 7.6 A Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, = 110 C) I TSM 100 A Circuit Fusing Consideration (t = 8.3 ms) I 2 t 1 A 2 s Forward Peak Gate Power (Pulse Width 1.0 µsec, T C = 75 C) P GM 5.0 W Forward Average Gate Power (t = 8.3 ms, T C = 75ºC) P G (AV) 0.5 W Forward Peak Gate Current (Pulse Width 1.0 µsec, T C = 75 C) I GM 2.0 A Operating Junction Temperature Range -0 to +110 C Storage Temperature Range T stg -0 to +150 C Stresses exceeding Maximum Ratings may damage the component. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect component reliability. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the component are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case R ƟJC 2.2 Thermal Resistance, Junction to Ambient R ƟJA 88 C/W Thermal Resistance, Junction to Ambient (Note 2) R ƟJA 80 Maximum Lead Temperature for Soldering Purposes (Note 3) T L 260 C
Electrical Characteristics - OFF ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit (V AK = Rated V DRM or V RRM, R GK = 1.0 k Ω) = 110 C I RRM - - 500 Peak Repetitive Forward or Reverse Blocking Current I DRM / - - 10 µa Electrical Characteristics - ON ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Reverse Gate Blocking Voltage, (I GR = 10 µa) V GRM 10 12.5 18 V Peak Reverse Gate Blocking Current, (V GR = 10 V) I GRM 1.2 µa Peak Forward On State Voltage (Note 5), (I TM = 20 A) V TM 1.3 1.9 V Gate Trigger Voltage (Note 6) (V AK = 12 Vdc; R L = 100 Ω, T C =110º) Gate Trigger Voltage (Continuous dc) (Note 6) (V AK = 12 V; R L = 100 Ω) Holding Current (V D = 12 V, Initiating Current = 200 ma, R GK = 1 kω) Latching Current (V D = 12 V, I G = 2.0 ma, R GK = 1 kω) 5.0 12 200 I GT = 0 C 300 0.5 0.65 1.0 = 0 C 1.5 V GT = 110 C 0.2 0.5 1.0 6.0 I H = 0 C 10 0.5 1.0 6.0 I L = 0 C 10 µa V ma ma Peak Reverse Gate Blocking Current (V GR = 10 V) I RGM 1.2 µa Turn-On Time (Source Voltage = 12 V, R S = 6.0 KΩ, I T = 16 A(pk), R GK = 1.0 KΩ) (V D = Rated V DRM, Rise Time = 20 ns, Pulse Width = 10 µs) t gt _ 2.0 5.0 µs
Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off State Voltage (VD = 0.67 x Rated VDRM, Exponential Waveform, RGK = 1.0 K, TJ = 110 C) Critical Rate of Rise of On State Current (IPK = 50 A, PW = 0 sec, dig/dt = 1 A/sec, IGT = 10 ma) dv/dt 2.0 10 V/µs di/dt 50 100 A/µs 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8" from case for 10 seconds.. Ratings apply for negative gate voltage or R GK = 1.0 kω Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Component should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 5. Pulse Test: Pulse Width 2.0 msec, Duty Cycle 2%. 6. R GK current not included in measurement. Voltage Current Characteristic of SCR Symbol V DRM Parameter Peak Repetitive Forward Off State Voltage +Current Anode + V TM I DRM Peak Forward Blocking Current on state V RRM Peak Repetitive Reverse Off State Voltage I RRM at V RRM I H I RRM V TM I H Peak Reverse Blocking Current Maximum On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode +Voltage I DRM at V DRM Forward Blocking Region (off state) Figure 1. Average Current Derating Figure 2. On State Power Dissipation
Figure 3. On State Characteristics Figure. Transient Thermal Response Figure 5. Typical Gate Trigger Current vs Junction Temperature Figure 6. Typical Gate Trigger Voltage vs Junction Temperature Figure 7. Typical Holding Current vs Junction Temperature Figure 8. Typical Latching Current vs Junction Temperature
Figure 9. Holding Current vs Gate-Carthode Resistance Fig.10 Exponential Static dv/dt vs Gate-Carthode Resistance & Junction Temp Figure 5. Typical Gate Trigger Current vs Junction Temperature Figure 6. Typical Gate Trigger Voltage vs Junction Temperature
Dimensions Soldering Footprint DPAK (SINGLE GAUGE) CASE 369C ISSUE D 6.20 0.2 3.0 0.118 V B R C T E SEATING PLANE 5.80 0.228 2.58 0.101 1.6 0.063 6.172 0.23 S 12 3 A K U Z SCALE 3:1 mm inches F G L D 2 PL J H 0.13 (0.005) M T Dim Inches Millimeters Min Max Min Max A 0.086 0.09 2.18 2.38 A1 0.000 0.005 0.00 0.13 b 0.025 0.035 0.63 0.89 b2 0.030 0.05 0.76 1.1 b3 0.180 0.215.57 5.6 c 0.018 0.02 0.6 0.61 c2 0.018 0.02 0.6 0.61 D 0.235 0.25 5.97 6.22 E 0.250 0.265 6.35 6.73 e 0.090 BSC 2.29 BSC H 0.370 0.10 9.0 10.1 L 0.055 0.070 1.0 1.78 L1 0.108 REF 2.7 REF L2 0.020 BSC 0.51 BSC L3 0.035 0.050 0.89 1.27 L 0.00 1.01 Z 0.155 3.93 1. DIMENSIONING AND TOLERANCING PER ASME Y1.5M, 199. 2. CONTROLLING DIMENSION: INCH. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z.. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL L3 Z NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.
Dimensions Part Marking System IPAK CASE 369D ISSUE C 1 2 3 DPAK CASE 369C STYLE YWW R1 2DSxG V S B R 12 3 A C E Z 1 2 3 IPAK CASE 369D STYLE YWW R1 2DSxG T SEATING PLANE F G K D 3 PL J 0.13 (0.005) M T H Pin Assignment Y= Y ear WW = Work Week R12DSx = Device Code x= M or N G= Pb Free Package 1 Cathode Dim Inches Millimeters Min Max Min Max A 0.235 0.25 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.09 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.6 0.58 F 0.037 0.05 0.9 1.1 G 0.090 BSC 2.29 BSC H 0.03 0.00 0.87 1.01 J 0.018 0.023 0.6 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215.5 5.5 S 0.025 0.00 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 3.93 2 Anode 3 Gate Anode Ordering Information Device Package Type Package MCR12DSMTG DPAK 369C Shipping 2500 Tape & Reel MCR12DSN-1G IPAK 369D 80 Units / Rail MCR12DSNTG DPAK 369C 2500 Tape & Reel 1. DIMENSIONING AND TOLERANCING PER ANSI Y1.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics