General Description, N & P Pair enhancement mode MOSFET, uses Advanced Trench to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features N-Channel 30V/5.8A,RDS(ON)=30mΩ@VGS=10V 30V/5.5A,RDS(ON)=40mΩ@VGS=4.5V P-Channel -30V/-5.4A,RDS(ON)=50mΩ@VGS=10V -30V/-4.2A,RDS(ON)=70mΩ@VGS=4.5V Pin Description ( SOP-8P ) Application Low Current DC/DC Conversion Load Switch CCFL Inverter Power Management in Notebook Computer Pin Define Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1 Ordering Information Part Ordering No. Part Marking Package Unit Quantity S8RG 4539WS SOP-8P Tape & Reel 2500 EA A Lot code B Date code S8RG : 13 Tape & Reel ; Pb- Free ; Halogen- Free Rev.B July 2010 Page 1
Absolute Maximum Ratings ( N-Channel ) (TA=25 Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150 ) TA=25 5.4 ID TA=70 4.0 A Pulsed Drain Current IDM 20 A Continuous Source Current(Diode Conduction) IS 1.5 A Power Dissipation TA=25 2.8 PD TA=70 1.8 W Operating Junction Temperature TJ 150 Storage Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 62.5 /W Electrical Characteristics ( N-Channel ) (TA=25 Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1.3 2.1 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 na VDS=24V,VGS=0V 1 Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0V ua 30 TJ=85 On-State Drain Current ID(on) VDS 5V,VGS=4.5V 10 A Drain-Source On-Resistance RDS(on) VGS=10V,ID=5.0A 16 30 VGS=4.5V,ID=4.7A 24 40 mω Forward Transconductance gfs VDS=15V,ID=5.2A 13 S Diode Forward Voltage VSD IS=1.6A,VGS=0V 0.8 1.3 V Dynamic Total Gate Charge Qg 8 12 VDS=20V,VGS=4.5V Gate-Source Charge Qgs ID 5.2A 1.6 Gate-Drain Charge Qgd 2.4 nc Input Capacitance Ciss 700 VDS=20V,VGS=0V Output Capacitance Coss 75 f=1mhz Reverse Transfer Capacitance Crss 45 pf td(on) 8 12 Turn-On Time VDD=15V,RL=15Ω tr 12 18 ID 1.0A,VGEN=10V td(off) 28 40 Turn-Off Time RG=6Ω tf 10 18 ns Rev.B July 2010 Page 2
Absolute Maximum Ratings ( P-Channel ) (TA=25 Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150 ) TA=25-5.4 ID TA=70-4.2 A Pulsed Drain Current IDM -30 A Continuous Source Current(Diode Conduction) IS -1.7 A Power Dissipation TA=25 2.8 PD TA=70 1.8 W Operating Junction Temperature TJ 150 Storage Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 62.5 /W Electrical Characteristics ( P-Channel ) (TA=25 Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30 Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -1.0-2.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 na VDS=-24V,VGS=0V 1 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V ua -30 TJ=85 On-State Drain Current ID(on) VDS 5V,VGS=-10V 25 A Drain-Source On-Resistance RDS(on) VGS=-10V,ID=-5.4A 36 50 VGS=-4.5V,ID=-4.2A 58 70 mω Forward Transconductance gfs VDS=-10V,ID=-4.9A 10 S Diode Forward Voltage VSD IS=-1.7A,VGS=0V 0.8 1.3 V Dynamic Total Gate Charge Qg 10 18 VDS=-15V,VGS=-10V Gate-Source Charge Qgs ID -5.0A 1.6 Gate-Drain Charge Qgd 3.0 nc Input Capacitance Ciss 500 VDS=-15V,VGS=0V Output Capacitance Coss 100 f=1mhz Reverse Transfer Capacitance Crss 55 pf td(on) 8 18 Turn-On Time VDD=-15V,RL=15Ω tr 8 18 ID -1.0A,VGEN=10V td(off) 25 50 Turn-Off Time RG=6Ω tf 25 35 ns Rev.B July 2010 Page 3
Typical Characteristics ( N-Channel ) Rev.B July 2010 Page 4
Typical Characteristics ( N-Channel ) Rev.B July 2010 Page 5
Typical Characteristics ( P-Channel ) Rev.B July 2010 Page 6
Typical Characteristics ( P-Channel ) Rev.B July 2010 Page 7
Typical Characteristics Rev.B July 2010 Page 8
Package Information ( SOP-8P ) 2010 Alfa-MOS Corp. 2F, No.80, Sec.1, Cheng Kung Rd., Nan Kang Dist., Taipei City 115, Taiwan (R.O.C.) Tel : 886 2) 2651 3928 Fax : 886 2) 2786 8483 http:// Rev.B July 2010 Page 9