dual swich (Half-Bridge) Collecor curren I C...... 9 A Collecor-emier volage CES... 1 2 Maximum juncion emperaure T j m a x... 1 7 5 C Fla base Type Copper base plae (non-plaing) RoHS Direcive complian Recognized under UL1557, File E323585 APPLICATION Wind power, Phoovolaic (Solar) power, AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm C2 () INTERNAL CONNECTION Di2 Tr2 Di1 Tr1 () E1 () Tolerance oherwise specified Division of Dimension Tolerance.5 o 3 ±.2 over 3 o 6 ±.3 over 6 o 3 ±.5 over 3 o 12 ±.8 over 12 o 4 ±1.2 () Publicaion Dae : June 215 1
MAXIMUM RATINGS (T j=25 C, unless oherwise specified) Symbol Iem Condiions Raing Uni CES Collecor-emier volage G-E shor-circuied 12 GES Gae-emier volage C-E shor-circuied ± 2 I C I CRM Collecor curren DC, T C =125 C Pulse, Repeiive P o Toal power dissipaion T C =25 C I E I ERM (Noe1) (Noe1) Emier curren DC (Noe2) (Noe2, 4) Pulse, Repeiive (Noe2, 4) (Noe3) (Noe3) 9 18 A 652 W i s o l Isolaion volage Terminals o base plae, RMS, f=6 Hz, AC 1 min 25 T j m a x Maximum juncion emperaure Insananeous even (overload) 175 C T C m a x Maximum case emperaure (Noe4) T j op Operaing juncion emperaure Coninuous operaion (under swiching) -4 ~ +15 T s g Sorage emperaure - -4 ~ +125 ELECTRICAL CHARACTERISTICS (T j=25 C, unless oherwise specified) Symbol Iem Condiions Limis 9 18 A 125 C Min. Typ. Max. I CES Collecor-emier cu-off curren CE = CES, G-E shor-circuied - - 1 ma I G ES Gae-emier leakage curren GE = GES, C-E shor-circuied - - 3. μa G E( h) Gae-emier hreshold volage I C =9 ma, CE =1 5.4 6. 6.6 CEsa Collecor-emier sauraion volage I C =9 A (Noe5), T j =25 C - 1.55 1.9 GE =15, T j =125 C - 1.75 - Terminal=chip T j =15 C - 1.8 - C ies Inpu capaciance - - 9 C o e s Oupu capaciance CE=1, G-E shor-circuied - - 18 C r e s Reverse ransfer capaciance - - 1.5 Q G Gae charge CC =6, I C =9 A, GE =15-23 - nc d ( o n ) Turn-on delay ime - - 9 CC =6, I C =9 A, GE =±15, r Rise ime - - 25 d ( o f f ) Turn-off delay ime - - 95 R G = Ω, Inducive load f Fall ime - - 35 EC rr Q rr (Noe.1) (Noe1) (Noe1) Emier-collecor volage I E =9 A (Noe5), T j =25 C - 1.65 2.1 G-E shor-circuied, T j =125 C - 1.65 - Terminal=chip T j =15 C - 1.65 - Reverse recovery ime CC =6, I E =9 A, GE =±15, - - 45 ns Reverse recovery charge R G= Ω, Inducive load - 5 - μc E on Turn-on swiching energy per pulse CC=6, I C/I E=9 A, - 68.9 - E off Turn-off swiching energy per pulse GE=±15, R G= Ω, T j =15 C, - 183 - E rr (Noe1) Reverse recovery energy per pulse Inducive load - 73.3 - mj R CC'+EE' Inernal lead resisance Main erminal-chip, per swich, T C =25 C (Noe4) C Uni nf ns mj -.286 - mω r g Inernal gae resisance Per swich - 2.2 - Ω Publicaion Dae : June 215 2
THERMAL RESISTANCE CHARACTERISTICS Symbol Iem Condiions R h ( j - c ) Q R h ( j - c)d R h ( c - s ) Thermal resisance Conac hermal resisance Juncion o case, per IGBT Juncion o case, per DIODE (Noe4) (Noe4) Case o hea sink, per 1/2 module, Thermal grease applied (Noe4, 6) Limis Min. Typ. Max. Uni - - 23 - - 39 K/kW - 12 - K/kW MECHANICAL CHARACTERISTICS Symbol Iem Condiions Limis Min. Typ. Max. M Main erminals M 6 screw 3.5 4. 4.5 N m Mouning orque M s Mouning o hea sink M 6 screw 3.5 4. 4.5 N m d s d a Creepage disance Clearance Terminal o erminal 24 - - Terminal o base plae 33 - - Terminal o erminal 14 - - Terminal o base plae 33 - - m mass - - 145 - g e c Flaness of base plae On he cenerline X, Y1, Y2 (Noe7) Uni mm mm -5 - +1 μm *: This produc is complian wih he Resricion of he Use of Cerain Hazardous Subsances in Elecrical and Elecronic Equipmen (RoHS) direcive 211/65/EU. Noe1. Represen raings and characerisics of he ani-parallel, emier-collecor free-wheeling diode (DIODE). 2. Juncion emperaure (T j ) should no increase beyond T j m a x raing. 3. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T j ) dose no exceed T j m a x raing. 4. Case emperaure (T C) and hea sink emperaure (T s) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o he figure of chip locaion. 5. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. 6. Typical value is measured by using hermally conducive grease of λ=.9 W/(m K). 7. Base plae (mouning side) flaness measuremen poins (X, Y1 and Y2) are as follows of he following figure. 39 mm 39 mm Y1 Y2 +: 凸 -: 凹 X mouning side mouning side Label side mouning side -: 凹 +: 凸 8. The company name and produc names herein are he rademarks and regisered rademarks of he respecive companies. Publicaion Dae : June 215 3
RECOMMENDED OPERATING CONDITIONS Symbol Iem Condiions Limis Min. Typ. Max. CC (DC) Supply volage Applied across - erminals - 6 85 GEon Gae (-emier drive) volage Applied across -/- erminals 13.5 15. 16.5 R G Exernal gae resisance Per swich - 3.6 Ω Uni CHIP LOCATION (Top view) Dimension in mm, olerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: DIODE Publicaion Dae : June 215 4
TEST CIRCUIT AND WAEFORMS i E v GE ~ 9 % + GE - GE - GE vce R G vge Load i C + CC A i C d ( o n ) ~ r d ( o ff ) 9 % 1% f i E A I E I rr Q rr =.5 I rr rr rr.5 I rr Swiching characerisics es circui and waveforms rr, Q rr es waveform I CM i C i C I CM i E I EM v EC CC v CE CC CC v CE A.1 I CM.1 CC.1 CC.2 I CM i i i IGBT Turn-on swiching energy IGBT Turn-off swiching energy DIODE Reverse recovery energy Turn-on / Turn-off swiching energy and Reverse recovery energy es waveforms (Inegral ime insrucion drawing) TEST CIRCUIT GE=15 I C G-E shorcircuied G-E shorcircuied I E G-E shorcircuied G-E shorcircuied GE=15 I C G-E shorcircuied G-E shorcircuied I E Tr1 Tr2 Di1 Di2 CEsa es circui EC es circui Publicaion Dae : June 215 5
PERFORMANCE CURES OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS COLLECTOR CURRENT IC (A) T j=25 C (Chip) GE=15 (Chip) 18 GE=2 13.5 16 15 12 14 12 11 8 1 6 4 9 2 2 4 6 8 1 COLLECTOR-EMITTER OLTAGE CE () COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION OLTAGE CEsa () 3.5 3. T j=125 C 2.5 T j=15 C 2. 1.5 T j=25 C 1..5. 2 4 6 8 12 14 16 18 COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS FREE WHEELING DIODE FORWARD CHARACTERISTICS COLLECTOR-EMITTER SATURATION OLTAGE CEsa () T j=25 C (Chip) G-E shor-circuied (Chip) 1 8 I C=18 A I C=9 A 6 I C=36 A 4 2 6 8 1 12 14 16 18 2 GATE-EMITTER OLTAGE GE () EMITTER-COLLECTOR OLTAGE EC () EMITTER CURRENT IE (A) 18 T 16 j=125 C 14 12 8 6 T j=15 C 4 2 T j=25 C..5 1. 1.5 2. 2.5 3. Publicaion Dae : June 215 6
PERFORMANCE CURES HALF-BRIDGE SWITCHING CHARACTERISTICS HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, GE=±15, R G= Ω, INDUCTIE LOAD CC=6, I C=9 A, GE=±15, INDUCTIE LOAD ---------------: T j=15 C, - - - - -: T j=125 C ---------------: T j=15 C, - - - - -: T j=125 C d ( o n ) d ( o ff) d ( o ff) SWITCHING TIME (ns) 1 f d ( o n ) SWITCHING TIME (ns) f r r 1 1 1 COLLECTOR CURRENT I C (A) HALF-BRIDGE SWITCHING CHARACTERISTICS 1.1 1 1 EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, GE=±15, R G= Ω, CC=6, I C/I E=9 A, GE=±15, INDUCTIE LOAD, PER PULSE INDUCTIE LOAD, PER PULSE ---------------: T j=15 C, - - - - -: T j=125 C ---------------: T j=15 C, - - - - -: T j=125 C SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) 1 1 E o f f E rr E on SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) 1 E o f f E on E rr 1 1 1 COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A) 1.1 1 1 EXTERNAL GATE RESISTANCE R G (Ω) Publicaion Dae : June 215 7
PERFORMANCE CURES CAPACITANCE CHARACTERISTICS FREE WHEELING DIODE REERSE RECOERY CHARACTERISTICS CC=6, GE=±15, R G= Ω, INDUCTIE LOAD G-E shor-circuied, T j=25 C ---------------: T j=15 C, - - - - -: T j=125 C C i e s 1 CAPACITANCE (nf) 1 C o e s rr (ns), I rr ( A) I rr rr 1 C r e s.1.1 1 1 1 1 1 1 COLLECTOR-EMITTER OLTAGE CE () EMITTER CURRENT I E (A) GATE CHARGE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) CC=6, I C=9 A, T j=25 C Single pulse, T C=25 C R h(j -c)q=23 K/kW, R h(j -c)d=39 K/kW 2 1 GATE-EMITTER OLTAGE GE () 15 1 5 5 15 2 25 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE Z h ( j - c) 1.1.1.1.1.1.1.1.1 1 1 GATE CHARGE Q G (nc) TIME (S) Publicaion Dae : June 215 8
Keep safey firs in your circui designs! Misubishi Elecric Corporaion pus he maximum effor ino making semiconducor producs beer and more reliable, bu here is always he possibiliy ha rouble may occur wih hem. Trouble wih semiconducors may lead o personal injury, fire or propery damage. Remember o give due consideraion o safey when making your circui designs, wih appropriae measures such as (i) placemen of subsiuive, auxiliary circuis, (ii) use of non-flammable maerial or (iii) prevenion agains any malfuncion or mishap. Noes regarding hese maerials These maerials are inended as a reference o assis our cusomers in he selecion of he Misubishi semiconducor produc bes suied o he cusomer's applicaion; hey do no convey any license under any inellecual propery righs, or any oher righs, belonging o Misubishi Elecric Corporaion or a hird pary. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, or infringemen of any hird-pary's righs, originaing in he use of any produc daa, diagrams, chars, programs, algorihms, or circui applicaion examples conained in hese maerials. All informaion conained in hese maerials, including produc daa, diagrams, chars, programs and algorihms represens informaion on producs a he ime of publicaion of hese maerials, and are subjec o change by Misubishi Elecric Corporaion wihou noice due o produc improvemens or oher reasons. I is herefore recommended ha cusomers conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for he laes produc informaion before purchasing a produc lised herein. The informaion described here may conain echnical inaccuracies or ypographical errors. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy, or oher loss rising from hese inaccuracies or errors. Please also pay aenion o informaion published by Misubishi Elecric Corporaion by various means, including he Misubishi Semiconducor home page (www.misubishielecric.com/semiconducors/). When using any or all of he informaion conained in hese maerials, including produc daa, diagrams, chars, programs, and algorihms, please be sure o evaluae all informaion as a oal sysem before making a final decision on he applicabiliy of he informaion and producs. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy or oher loss resuling from he informaion conained herein. Misubishi Elecric Corporaion semiconducors are no designed or manufacured for use in a device or sysem ha is used under circumsances in which human life is poenially a sake. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor when considering he use of a produc conained herein for any specific purposes, such as apparaus or sysems for ransporaion, vehicular, medical, aerospace, nuclear, or undersea repeaer use. The prior wrien approval of Misubishi Elecric Corporaion is necessary o reprin or reproduce in whole or in par hese maerials. If hese producs or echnologies are subjec o he Japanese expor conrol resricions, hey mus be expored under a license from he Japanese governmen and canno be impored ino a counry oher han he approved desinaion. Any diversion or reexpor conrary o he expor conrol laws and regulaions of Japan and/or he counry of desinaion is prohibied. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for furher deails on hese maerials or he producs conained herein. 213-215 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERED. Publicaion Dae : June 215 9