BFP7 NPN Silicon Germanium RF Transistor High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications up to GHz and more Ideal for CDMA and WLAN applications Outstanding noise figure F =.5 db at.8 GHz Outstanding noise figure F =.85 db at 6 GHz High maximum stable gain G ms = 7 db at.8 GHz Gold metallization for extra high reliability 5 GHz f T Silicon Germanium technology Pbfree (RoHS compliant) package ) Qualified according AEC Q ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP7 R7s =B =E =C =E SOT Pbcontaining package may be available upon special request 9
BFP7 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage T A > C T A C V CEO V.5 Collectoremitter voltage V CES Collectorbase voltage V CBO Emitterbase voltage V EBO. Collector current I C ma Base current I B Total power dissipation ) P tot 6 mw T S 89 C Junction temperature T j 5 C Ambient temperature T A 65... 5 Storage temperature T stg 65... 5 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 8 K/W Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO.7 V I C = ma, I B = Collectoremitter cutoff current I CES µa V CE = V, V BE = Collectorbase cutoff current I CBO na V CB = 5 V, I E = Emitterbase cutoff current I EBO µa V EB =.5 V, I C = DC current gain I C = 5 ma, V CE = V, pulse measured h FE 6 5 T S is measured on the collector lead at the soldering point to the pcb For calculation of R thja please refer to Application Note Thermal Resistance 9
BFP7 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T GHz I C = 5 ma, V CE = V, f = GHz Collectorbase capacitance V CB = V, f = MHz, V BE =, emitter grounded C cb.8. pf Collector emitter capacitance V CE = V, f = MHz, V BE =, base grounded Emitterbase capacitance V EB =.5 V, f = MHz, V CB =, collector grounded Noise figure I C = 8 ma, V CE = V, f =.8 GHz, Z S = Z Sopt I C = 8 ma, V CE = V, f = 6 GHz, Z S = Z Sopt Power gain, maximum stable ) I C = 5 ma, V CE = V, Z S = Z Sopt, Z L = Z Lopt, f =.8 GHz Power gain, maximum available ) I C = 5 ma, V CE = V, Z S = Z Sopt, Z L = Z Lopt, f = 6 GHz Transducer gain I C = 5 ma, V CE = V, Z S = Z L = 5 Ω, f =.8 GHz f = 6 GHz Third order intercept point at output ) V CE = V, I C = 5 ma, Z S =Z L =5 Ω, f =.8 GHz db Compression point at output I C = 5 ma, V CE = V, Z S =Z L =5 Ω, f =.8 GHz C ce. C eb. F.5.85 db G ms 7 db G ma 7 db S e.5.5 db IP 5 dbm P db G ma = S e / S e (k(k²) / ), G ms = S e / S e IP value depends on termination of all intermodulation frequency components. Termination used for this measurement is 5Ω from. MHz to 6 GHz 9
BFP7 Simulation Data For SPICEmodel as well as for Sparameters including noise parameters refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest version before actually starting your design. The simulation data have been generated and verified up to GHz using typical devices. The BFP7 nonlinear SPICEmodel reflects the typical DC and RFdevice performance with high accuracy. 9
BFP7 Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 8 mw K/W Ptot RthJS 8 6 D =,5,,,5,,,5 5 5 6 75 9 5 C 5 T S Permissible Pulse Load P totmax /P totdc = ƒ(t p ) 7 6 5 s Collectorbase capacitance C cb = ƒ (V CB ) f = MHz tp. Ptotmax/PtotDC.8.6. D =.5...5...5 C cb [pf]...8.6. 7 6 5 s T P. 6 8 V CB [V] 9 5
BFP7 Third order Intercept Point IP = ƒ (I C ) (Output, Z S = Z L = 5 Ω ) V CE = parameter, f =.8 GHz Transition frequency f T = ƒ(i C ) f = GHz V CE = parameter 5 7.V 5.V V to V.V 5 8 IP [dbm] 5.V f T [GHz] 5.V 9 5 6.75V 5.5V 5 5 5 5 I C [ma] 5 5 5 5 I [ma] C Power gain G ma, G ms = ƒ (f) V CE = V, I C = 5 ma Power gain G ma, G ms = ƒ (I C ) V CE = V f = parameter 55 5 5.9GHz 8 6.8GHz.GHz 5.GHz G [db] G ms G [db].ghz 5 S G ma 8 6 5.GHz 6.GHz 5 5 5 6 f [GHz] 5 5 5 5 I C [ma] 9 6
BFP7 Power gain G ma, G ms = ƒ (V CE ) I C = 5 ma f = parameter Noise figure F = ƒ(i C ) V CE = V, f = parameter Z S = Z Sopt 6.8.9GHz G [db] 8 6.8GHz.GHz.GHz.GHz 5.GHz 6.GHz F [db].6.. f = 6GHz f = 5GHz f = GHz f =.8GHz f =.9GHz.8.6 8...5.5.5.5.5 5 Noise figure F = ƒ(i C ) V CE = V, f =.8 GHz V CE [V] 5 5 5 Noise figure F = ƒ(f) V CE = V, Z S = Z Sopt I c [ma]..8..6. Z S = 5Ω. Z S = Z Sopt.8 F [db] F [db].8.6.6. I C = 5mA I C = 8mA... 5 5 5 I c [ma] 5 6 7 f [GHz] 9 7
BFP7 Source impedance for min. noise figure vs. frequency V CE = V, I C = 8 ma / 5 ma.5.5... I c = 8mA 5.. GHz.GHz.8GHz.. GHz.9GHz 6GHz 5GHz 6GHz... I c = 5mA 5.5.5 9 8
Package SOT BFP7 Package Outline ±... MAX...9 ±. A. +..5 x. M.5 +..6.5. ±.. MIN.. M Foot Print.6 Marking Layout (Example) 5, June Date code (YM) BGA Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel.. 8.6.8 A.5 +..5.5 ±..5.9 Manufacturer Pin Pin.5. 9 9
BFP7 Edition 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9