BFR93A/BFR93AR/BFR93AW. Silicon NPN Planar RF Transistor. Vishay Semiconductors. Applications. Features. Absolute Maximum Ratings
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1 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features High power gain High transition frequency Low noise figure BFR93A Marking: +R2 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR93AR Marking: +R5 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR93AW Marking: WR2 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage V CBO 2 V Collector-emitter voltage V CEO 12 V Emitter-base voltage V EBO 2 V Collector current I C 5 ma Total power dissipation T amb 6 C P tot 2 mw Junction temperature T j 15 C Storage temperature range T stg 65 to +15 C Rev. 3, 2-Jan-99 1 (9)
2 Maximum Thermal Resistance T amb = 25 C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (25 x 2 x 1.5) mm 3 R thja 45 K/W plated with 35m Cu Electrical DC Characteristics T amb = 25 C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Collector cut-off current V CE = 2 V, V BE = I CES 1 A Collector-base cut-off current V CB = 1 V, I E = I CBO 1 na Emitter-base cut-off current V EB = 2 V, I C = I EBO 1 A Collector-emitter breakdown voltage I C = 1 ma, I B = V (BR)CEO 12 V Collector-emitter saturation voltage I C = 5 ma, I B = 5 ma V CEsat.1.4 V DC forward current transfer ratio V CE = 5 V, I C = 3 ma h FE Electrical AC Characteristics T amb = 25 C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Transition frequency V CE = 5 V, I C = 3 ma, f = 5 MHz f T 6 GHz Collector-base capacitance V CB = 1 V, f = 1 MHz C cb.45 pf Collector-emitter capacitance V CE = 5 V, f = 1 MHz C ce.2 pf Emitter-base capacitance V EB =.5 V, f = 1 MHz C eb 1.5 pf Noise figure V CE = 8 V, Z S = 5, f = 8 MHz, F 1.6 db I C = 5 ma V CE = 8 V, Z S = 5, f = 8 MHz, F 2.1 db I C = 25 ma Power gain V CE = 8 V, I C = 25 ma, Z S = 5, Z L = Z Lopt, f = 8 MHz G pe 14 db Linear output voltage two tone intermodulation test V CE = 8 V, I C = 25 ma, d IM = 6 db, f 1 = 86 MHz, f 2 = 81 MHz, Z S = Z L = 5 V 1 = V 2 26 mv Third order intercept point V CE = 8 V, I C = 25 ma, f = 8 MHz IP 3 31 dbm 2 (9) Rev. 3, 2-Jan-99
3 Common Emitter S Parameters Z = 5 T amb = 25 C, unless otherwise specified S11 S21 S12 S22 V CE /V I C /ma f/mhz deg deg deg deg Rev. 3, 2-Jan-99 3 (9)
4 S11 S21 S12 S22 V CE /V I C /ma f/mhz deg deg deg deg (9) Rev. 3, 2-Jan-99
5 Typical Characteristics (T amb = 25 C unless otherwise specified) P tot Total Power Dissipation ( mw ) f Transition Frequency ( MHz ) T T amb Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature V CE =5V f=5mhz I C Collector Current ( ma ) Figure 2. Transition Frequency vs. Collector Current C cb Collector Base Capacitance ( pf ) F Noise Figure ( db ) f=1mhz V CB Collector Base Voltage ( V ) Figure 3. Collector Base Capacitance vs. Collector Base Voltage V CE =8V f=8mhz Z S = I C Collector Current ( ma ) Figure 4. Noise Figure vs. Collector Current Rev. 3, 2-Jan-99 5 (9)
6 V CE = 8 V, I C = 25 ma, Z = 5 S 11 S 12 j.5 j j GHz 6 j.2 2. GHz ÁÁÁ 1..2 ÁÁ 1 ÁÁ 2 ÁÁ 5 j j.2.1 j j.5 j j Figure 5. Input reflection coefficient Figure 7. Reverse transmission coefficient S 21 S j.5 j j j.2 j GHz 2 4 ÁÁ.2 ÁÁ.5 ÁÁ 1 ÁÁ j.2 2. GHz.1 j j.5 j j2 Figure 6. Forward transmission coefficient Figure 8. Output reflection coefficient 6 (9) Rev. 3, 2-Jan-99
7 Dimensions of BFR93A in mm Dimensions of BFR93AR in mm Rev. 3, 2-Jan-99 7 (9)
8 Dimensions of BFR93AW in mm (9) Rev. 3, 2-Jan-99
9 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 () , Fax number: 49 () Rev. 3, 2-Jan-99 9 (9)
10 This datasheet has been download from: Datasheets for electronics components.
Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu
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