BPW85. Silicon NPN Phototransistor. Description. Features. Applications. Absolute Maximum Ratings
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1 Silicon NPN Phototransistor Description is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T (ø 3 mm) plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. The viewing angle of ± 25 makes it insensible to ambient straylight. Features Fast response times High photo sensitivity Standard T (ø 3 mm ) clear plastic package Axial terminals Angle of half sensitivity ϕ = ± 25 Suitable for visible and near infrared radiation Applications Detector in electronic control and drive circuits Absolute Maximum Ratings T amb = 25 C Parameter Test Conditions Symbol Value Unit Collector Emitter Voltage V CEO 7 V Emitter Collector Voltage V ECO 5 V Collector Current I C 5 ma Peak Collector Current t p /T =.5, t p ms I CM ma Total Power Dissipation T amb 55 C P tot mw Junction Temperature T j C Storage Temperature Range T stg C Soldering Temperature t 3 s, 2 mm from case T sd 26 C Thermal Resistance Junction/Ambient R thja 45 K/W (6)
2 Basic Characteristics T amb = 25 C Parameter Test Conditions Symbol Min Typ Max Unit Collector Emitter Breakdown I C = ma V (BR)CEO 7 V Voltage Collector Dark Current V CE = 2 V, E = I CEO 2 na Collector Emitter Capacitance V CE = 5 V, f = MHz, E= C CEO 3 pf Angle of Half Sensitivity ϕ ±25 deg Wavelength of Peak Sensitivity p 85 nm Range of Spectral Bandwidth nm Collector Emitter Saturation Voltage E e =mw/cm 2, =95nm, I C =.ma V CEsat.3 V Turn On Time V S =5V, I C =5mA, R L = t on 2. s Turn Off Time V S =5V, I C =5mA, R L = t off 2.3 s Cut Off Frequency V S =5V, I C =5mA, R L = f c 8 khz Type Dedicated Characteristics T amb = 25 C Parameter Test Conditions Type Symbol Min Typ Max Unit Collector Light Current E e =mw/cm 2, A I ca ma e =95nm, V CE =5V B I ca ma C I ca ma Typical Characteristics (T amb = 25 C unless otherwise specified) P tot Total Power Dissipation ( mw ) R thja I CEO Collector Dark Current ( na ) V CE =2V T amb Ambient Temperature ( C ) T amb Ambient Temperature ( C ) Figure. Total Power Dissipation vs. Ambient Temperature Figure 2. Collector Dark Current vs. Ambient Temperature 2 (6)
3 I ca rel Relative Collector Current V CE =5V E e =mw/cm 2 =95nm. BPW 85 B E e = mw/cm 2.5 mw/cm 2.2 mw/cm 2. mw/cm 2.5 mw/cm 2 =95nm T amb Ambient Temperature ( C ) Figure 3. Relative Collector Current vs. Ambient Temperature Figure 6. Collector Light Current vs. Collector Emitter Voltage C A V CE =5V =95nm... B E e Irradiance ( mw / cm 2 ) BPW 85 C =95nm.. E e = mw/cm 2.5 mw/cm 2.2 mw/cm 2. mw/cm 2.5 mw/cm 2 Figure 4. Collector Light Current vs. Irradiance Figure 7. Collector Light Current vs. Collector Emitter Voltage BPW 85 A =95nm.. E e = mw/cm 2.5 mw/cm 2.2 mw/cm 2. mw/cm 2.5 mw/cm 2 C CEO Collector Emitter Capacitance ( pf ) f=mhz. Figure 5. Collector Light Current vs. Collector Emitter Voltage Figure 8. Collector Emitter Capacitance vs. Collector Emitter Voltage 3 (6)
4 t on / t off Turn on / Turn off Time ( s ) V CE =5V R L = =95nm t off t on S rel Relative Sensitivity I C Collector Current ( ma ) Figure 9. Turn On/Turn Off Time vs. Collector Current Figure. Relative Radiant Sensitivity vs. Angular Displacement S ( ) rel Relative Spectral Sensitivity Wavelength ( nm ) Figure. Relative Spectral Sensitivity vs. Wavelength 4 (6)
5 Dimensions in mm (6)
6 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (99) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 99 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 9/69/EEC Annex A, B and C (transitional substances) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 () , Fax number: 49 () (6)
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More informationPart Ordering code Type Marking Remarks BAS85 BAS85-GS18 or BAS85-GS08 - Tape and Reel
Small Signal Schottky Diode Features For general purpose applications This diode features low turn-on voltage e2 The devices are protected by a PN junction guard ring against excessive voltage, such as
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Optocoupler, Phototransistor Output, FEATURES SMD low profile 5 pin package TCLT..Series Isolation test voltage 5 V RMS CTR flexibility available see order information 7296 5 4 3 2 C V D E Special construction
More informationBAS81 / 82 / 83. Small Signal Schottky Diodes. Vishay Semiconductors. Features Integrated protection ring against static discharge
Small Signal Schottky Diodes Features Integrated protection ring against static discharge e2 Low capacitance Low leakage current Low forward voltage drop Very low switching time Lead (Pb)-free component
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Optocoupler, Phototransistor Output, TCLT..Series A C 4 E 3 2 C DESCRIPTION C 7295 V D E The TCLT.. series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode
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Low Current 63 LED Description The new 63 LED series have been designed in the smallest SMD package. This innovative 63 LED technology opens the way to smaller products of higher performance more design
More informationPart Ordering code Marking Remarks BAV99-V BAV99-V-GS18 or BAV99-V-GS08 JE Tape and Reel
Small Signal Switching Diode, Dual Features Fast switching speed High conductance Surface mount package ideally suited for automatic insertion Connected in series Lead (Pb)-free component Component in
More informationAbsolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Part Symbol Value Unit
Ultra Fast Sinterglass Diode Features High temperature metallurgically bonded construction Cavity-free glass passivated junction Superfast recovery time for high efficiency Low forward voltage, high current
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Vishay Semiconductors Optocoupler, Photodarlington Output, AC FEATURES Internal R BE for better stability A/C 1 6 NC BV CEO < 60 V i179040 DESCRIPTION C/A 2 NC 3 The IL766B is a bidirectional input, optically
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Optocoupler, Phototransistor Output, High Temperature Features Extra low coupling capacity - typical.2 pf High Common Mode Rejection Low temperature coefficient of CTR CTR offered in 9 groups Reinforced
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