Parameter Test condition Symbol Value Unit Junction ambient l = 4 mm, T L = constant R thja 300 K/W
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1 Small Signal Zener Diodes Features Very sharp reverse characteristic Low reverse current level Very high stability e2 Low noise Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC Applications Voltage stabilization Mechanical Data Case: DO-35 Glass case Weight: approx. 25 mg Packaging codes/options: TAP/ k per Ammopack (52 mm tape), 3 k/box Absolute Maximum Ratings T amb, unless otherwise specified Parameter Test condition Symbol Value Unit Power dissipation l = 4 mm, T L P tot 5 mw Z-current P tot / ma Junction temperature T j 75 C Storage temperature range T stg - 65 to + 75 C Thermal Characteristics T amb, unless otherwise specified Parameter Test condition Symbol Value Unit Junction ambient l = 4 mm, T L = constant R thja 3 K/W Electrical Characteristics T amb, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 2 ma V F.5 V Rev. 2., 24-Feb-6
2 Electrical Characteristics Partnumber group Partnumber Zener Voltage Dynamic Resistance Test Current Reverse Leakage Current at r Z at I R at V R I R ) V V Ω ma µa V µa V min max max max max TZX2V4 TZX2V4A TZX2V4B TZX2V7 TZX2V7A TZX2V7B TZX2V7C TZX3V TZX3VA TZX3VB TZX3VC TZX3V3 TZX3V3A TZX3V3B TZX3V3C TZX3V6 TZX3V6A TZX3V6B TZX3V6C TZX3V9 TZX3V9A TZX3V9B TZX3V9C TZX4V3 TZX4V3A TZX4V3B TZX4V3C TZX4V3D TZX4V7 TZX4V7A TZX4V7B TZX4V7C TZX4V7D TZX5V TZX5VA TZX5VB TZX5VC TZX5VD TZX5V6 TZX5V6A TZX5V6B TZX5V6C TZX5V6D TZX5V6E TZX6V2 TZX6V2A TZX6V2B TZX6V2C TZX6V2D TZX6V2E TZX6V8 TZX6V8A TZX6V8B TZX6V8C TZX6V8D at V R ) 2 Rev. 2., 24-Feb-6
3 Partnumber group Partnumber Zener Voltage Dynamic Resistance Test Current Reverse Leakage Current at r Z at I R at V R I R ) at V R ) V V Ω ma µa V µa V min max max max max TZX7V5 TZX7V5A TZX7V5B TZX7V5C TZX7V5D TZX7V5X TZX8V2 TZX8V2A TZX8V2B TZX8V2C TZX8V2D TZX9V TZX9VA TZX9VB TZX9VC TZX9VD TZX9VE TZX TZXA TZXB TZXC TZXD TZX TZXA TZXB TZXC TZXD TZX2 TZX2A TZX2B TZX2C TZX2D TZX2X TZX3 TZX3A TZX3B TZX3C TZX4 TZX4A TZX4B TZX4C TZX5 TZX5A TZX5B TZX5C TZX5X TZX6 TZX6A TZX6B TZX6C TZX8A TZX8A TZX8B TZX8C TZX2A TZX2A TZX2B TZX2C Rev. 2., 24-Feb-6 3
4 Partnumber group Partnumber Zener Voltage Dynamic Resistance Test Current Reverse Leakage Current at r Z at I R at V R I ) R at V ) R V V Ω ma µa V µa V min max max max max TZX22 TZX22A TZX22B TZX22C TZX24 TZX24A TZX24B TZX24C TZX24X TZX27 TZX27A TZX27B TZX27C TZX27X TZX3 TZX3A TZX3B TZX3C TZX3X TZX33 TZX33A TZX33B TZX33C TZX36 TZX36A TZX36B TZX36C TZX36X ) Additional measurement NOTE: Additional measurement of voltage group TZM9V to TZX36, I R at 95 % min 4 na at T j Typical Characteristics T amb, unless otherwise specified R thja - Therm. Resist. Junction Ambient (K/W) l l 2 T L = constant 5 5 I - Lead Length (mm) P tot - Total Power Dissipation (mw) T amb - Ambient Temperature ( C) Figure. Thermal Resistance vs. Lead Length Figure 2. Total Power Dissipation vs. Ambient Temperature 4 Rev. 2., 24-Feb-6
5 2 - Voltage Change (mv) T j = 5 ma C D - Diode Capacitance (pf) 5 5 V R = 2 V T j Figure 3. Typical Change of Working Voltage under Operating Conditions at T amb Figure 6. Diode Capacitance vs. Z-Voltage tn - Relative Voltage Change.3 tn = t / (25 C).2 TK VZ = x -4 /K 8 x -4 /K 6 x. -4 /K 4 x -4 /K 2 x -4 /K. - 2 x -4 /K.9-4 x -4 /K T j - Junction Temperature ( C) I F - Forward Current (ma) T j V F - Forward Voltage (V). Figure 4. Typical Change of Working Voltage vs. Junction Temperature Figure 7. Forward Current vs. Forward Voltage TK VZ - Temperature Coefficient of ( -4 /K) 5 5 = 5 ma Figure 5. Temperature Coefficient of Vz vs. Z-Voltage - Z-Current (ma) P tot = 5 mw T amb Figure 8. Z-Current vs. Z-Voltage Rev. 2., 24-Feb-6 5
6 5 (Ω) - Z-Current (ma) P tot = 5 mw T amb 35 r Z - Differential Z-Resistance = ma 5 ma ma Tj Figure 9. Z-Current vs. Z-Voltage Figure. Differential Z-Resistance vs. Z-Voltage Z thp - Thermal Resistance for Pulse Cond. (KW) /T =.5 /T =.2 /T =. /T =.5 /T =. /T =.2 - Pulse Length (ms) Single Pulse R thja = 3 K/W T = T jmax - T amb i ZM = (- + ( 2 + 4r zj x T/Z thp ) /2 )/(2r zj ) Figure. Thermal Response Package Dimensions in mm (Inches) Cathode Identification ISO Method E.55 (.2) max (.8) max. Standard Glass Case 54A2 DIN 488 JEDEC DO (.2) min. 3.9 (.5) max. 26 (.2) min. 6 Rev. 2., 24-Feb-6
7 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to TZX-Series. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (99) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 99 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 9/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Rev. 2., 24-Feb-6 7
8 Notice Legal Disclaimer Notice Vishay Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 9 Revision: 8-Apr-5
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