APT3NB2C3G APT3NLC3G *G Denotes RoHS Compliant, Pb Free Terminal Finish. V 3A.15Ω Super Junction MOSFET T-MAX COOLMOS TO-26 Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Popular T-MAX or TO-26 Package D G S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS Symbol All Ratings: TC = C unless otherwise specified. Parameter APT3NB2C3G_LC3G -Source Voltage ID Continuous Current @ TC = C 3 IDM Pulsed Current VGS Gate-Source Voltage Continuous ±2 VGSM Gate-Source Voltage Transient ±3 Total Power Dissipation @ TC = C 17 Watts Linear Derating Factor 3.33 W/ C VDSS PD TJ,TSTG TL dv/ 1 12-55 to 15 Operating and Storage Junction Temperature Range C Lead Temperature:.63" from Case for 1 Sec. 3 -Source Voltage slope (VDS = 6V, ID = 3A, TJ = 1 C) 5 V/ns IAR Repetitive Avalanche Current 7 17 EAR Repetitive Avalanche Energy 7.5 EAS Single Pulse Avalanche Energy mj 67 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN BVDSS -Source Breakdown Voltage (VGS = V, ID = 5µA) RDS(on) -Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 1V, ID = 22A) Zero Gate Voltage Current (VDS = V, VGS = V) TYP.1.15 1. 5 5 Gate-Source Leakage Current (VGS = ±2V, VDS = V) 2.1 Zero Gate Voltage Current (VDS = V, VGS = V, TJ = 15 C) Gate Threshold Voltage (VDS = VGS, ID = 2mA) MAX 3 Ohms µa ±2 na 3.9 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com "COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" 5-717 Rev G 9-217 Symbol
DYNAMIC CHARACTERISTICS Symbol Characteristic C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Q g Total Gate Charge 3 Q gs Gate-Source Charge Q gd Gate- ("Miller") Charge t d(on) Turn-on Delay Time t r Rise Time t d(off) Turn-off Delay Time t f Fall Time E on Turn-on Switching Energy 6 E off Turn-off Switching Energy E on Turn-on Switching Energy 6 E off Turn-off Switching Energy Test Conditions = V = V f = 1 MHz = 1V = V = 3A @ C RESISTIVE SWITCHING = 1V = V = 3A @ 1 C = 2.5Ω INDUCTIVE SWITCHING @ C = 533V, = 15V = 3A, INDUCTIVE SWITCHING @ 1 C = 533V, = 15V = 3A, APT3NB2C3G _LC3G 51 pf 11 1 355 22 nc 9 15 7 ns 6 9 6 5 115 µj 67 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions I S Continuous Source Current (Body Diode) I Pulsed Source Current 1 SM (Body Diode) V Diode Forward Voltage 2 SD ( = V, I S = -3A) t rr Reverse Recovery Time (I S = -3A, dl S / = 1A/µs, V R = V) Q rr Reverse Recovery Charge (I S = -3A, dl S / = 1A/µs, V R = V) dv / Peak Diode Recovery dv / 5 THERMAL CHARACTERISTICS Symbol Characteristic R θjc Junction to Case R θja Junction to Ambient 3 12 1 1.2 55 3 6.3 ns µc V/ns C/W 1 Repetitive Rating: Pulse wih limited by maximum junction temperature 2 Pulse Test: Pulse wih < 3 µs, Duty Cycle < 2% 3 See MIL-STD- Method 371 Microsemi reserves the right to change, without notice, the specifications and information contained herein..35 Starting T j = + C, L = 115.92mH, = Ω, Peak I L = 3.A 5 I S = -3A di / = 1A/µs V R = V T J = 1 C 6 Eon includes diode reverse recovery. See figures 1, 2. 7 Repetitve avalanche causes additional power losses that can be calculated as P AV =E AR *f 5-717 Rev G 9-217 Z θjc, THERMAL IMPEDANCE ( C/W).3..2.15.9.7.5.1.3 t 1 t 2.5.1 Duty Factor D = t 1/t 2.5 SINGLE PULSE Peak T J = P DM x Z θjc + T C 1-5 1-1 -3 1-2 1-1 1. RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Note: P DM
Typical Performance Curves TC ( C).13 ZEXT.117 Dissipated Power (Watts).2.17 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. TJ ( C) VDS> ID (ON) x RDS (ON)MAX. µsec. PULSE TEST @ <.5 % DUTY CYCLE TJ = -55 C 7 6 5 3 TJ = + C 2 TJ = +1 C 5.5V 3 5V 2.5V 1 V 1 2 3 5 6 7 9 1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1. NORMALIZED TO V = 1V @ 17A GS 1.3 1.2 VGS=1V 1.1 1. VGS=2V.9. FIGURE, TRANSFER CHARACTERISTICS 3 2 15 1 5 5 1 1 15 I V 2.5 D 1.5 1..95.9.5. -5 5 1 15 = 17A GS = 1V 2. 1.5 1..5-5 1.1 TJ, JUNCTION TEMPERATURE ( C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) TC, CASE TEMPERATURE ( C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 3. 6 FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 35 1 2 3 5-5 1 1 15 TJ, JUNCTION TEMPERATURE ( C) FIGURE, ON-RESISTANCE vs. TEMPERATURE 1.1 1..9..7.6-5 - 5 1 1 15 TC, CASE TEMPERATURE ( C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 5-717 Rev G 9-217 1 6.5V 6V 2 6 1 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 9 VGS =15 & 1V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 1 APT3NB2C3G _LC3G 5
5-717 Rev G 9-217 Typical Performance Curves, GATE-TO-SOURCE VOLTAGE (VOLTS), DRAIN CURRENT (AMPERES) SWITCHING ENERGY (µj) t d(on) and t d(off) (ns), DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 1, MAXIMUM SAFE OPERATING AREA 16 12 = 3A = V = 16V = 6V APT3NB2C3G _LC3G Ciss Coss Crss 1 1 2 3 5, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 2 5 1 15 2 3 1.3.5.7.9 1.1 1.3 1.5 Q g, TOTAL GATE CHARGE (nc) V SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 1 9 16 1 12 1 6 t d(off) R, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pf) 2, 1, 1 1 1 1 V = 533V DD R G T = 1 C J L = 1µH T J =+15 C T J =+ C 2 2 t d(on) 1 t r 1 2 3 5 6 1 2 3 5 6 (A) (A) FIGURE 1, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT 2 15 1 5 = 533V T J = 1 C L = 1µH = 533V T J = 1 C L = 1µH E ON includes diode reverse recovery. E on Graph removed E off 1 2 3 5 6 5 1 15 2 3 35 5 5 (A), GATE RESISTANCE (Ohms) FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE SWITCHING ENERGY (µj) t r and t f (ns) 7 6 5 3 35 3 2 15 1 5 V = 533V DD I = 3A D T = 1 C J L = 1µH E ON includes diode reverse recovery. t f E on E off
APT3NB2C3G _LC3G Gate Voltage 1 % 9% Gate Voltage t T = 1 C J d(off) td(on) T = 1 C J 9% Voltage Current 9% 5% t f tr 5% 1% Voltage 1 % Switching Energy Current Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 1, Turn-on Switching Waveforms and Definitions APT15DF1 V CE IC G D.U.T. Figure 2, Inductive Switching Test Circuit T-MAXTM (B2) Package Outline TO-26 (L) Package Outline e1 SAC: Tin, Silver, Copper.69 (.15) 5.31 (.29) 1.9 (.59) 2.9 (.9) e1 SAC: Tin, Silver, Copper.6 (.11) 5.21 (.) 1. (.71) 2.1 (.79) 15.9 (.61) 16.26 (.6) 19.51 (.76) 2.5 (.7) 3.1 (.122) 3. (.137) 5.3 (.212) 6.2 (.2) 5.79 (.22) 6.2 (.2).5 (.177) Max.. (.16).79 (.31) 2.21 (.7) 2.59 (.12) 19.1 (.7) 2.32 (.). (1.3) 26.9 (1.3) 2.7 (.113) 3.12 (.123) 2.29 (.9) 2.69 (.16) 1.65 (.65) 2.13 (.) 1.1 (.) 1. (.55) 5.5 (.215) BSC 2-Plcs. These dimensions are equal to the TO-27 without the mounting hole. Dimensions in Millimeters and (Inches) 19.1 (.7) 21.39 (.2) Gate Source. (.19). (.33) 2.59 (.12) 3. (.11).76 (.3) 1.3 (.51) 2.79 (.11) 3.1 (.1) 5.5 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 2.29 (.9) 2.69 (.16) Gate Source 5-717 Rev G 9-217 2. (.19) 21.6 (.5)