dvanced Power N-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOSFET Simple rive Requirement BV SS 4V Fast Switching Characteristic R S(ON) 5mΩ Low On-resistance I 7.8 escription SO-8 S S S P9465EM RoHS-compliant Product dvanced Power MOSFETs from PEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as C/C converters. S bsolute Maximum Ratings V S V S Symbol Parameter Rating Units I @T =5 I @T =7 I M rain-source Voltage 4 ate-source Voltage +6 Continuous rain Current 3 7.8 Continuous rain Current 3 6.3 Pulsed rain Current 3 P @T =5 Total Power issipation.5 Linear erating Factor. T ST Storage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 V V W W/ Thermal ata Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 5 /W ata and specifications subject to change without notice 833
P9465EM Electrical Characteristics@T j =5 o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV SS rain-source Breakdown Voltage V S =V, I =m 4 - - V ΔBV SS /ΔT j Breakdown Voltage Temperature Coefficient Reference to 5, I =m -.3 - V/ R S(ON) Static rain-source On-Resistance V S =V, I =7 - - 5 mω V S =, I =5 - - 3 mω V S(th) ate Threshold Voltage V S =V S, I =5u.8 -.5 V g fs Forward Transconductance V S =5V, I =7-5 - S I SS rain-source Leakage Current V S =4V, V S =V - - u rain-source Leakage Current (T j =7 o C) V S =3V,V S =V - - 5 u I SS ate-source Leakage V S =+6V - - +3 u Q g Total ate Charge I =7-8.5 4 nc Q gs ate-source Charge V S =3V -.6 - nc Q gd ate-rain ("Miller") Charge V S = - 4. - nc t d(on) Turn-on elay Time V S =V - 5.3 - ns t r Rise Time I = - 6.7 - ns t d(off) Turn-off elay Time R =3.3Ω,V S =V -.5 - ns t f Fall Time R =Ω - 4.5 - ns C iss Input Capacitance V S =V - 6 98 pf C oss Output Capacitance V S =5V - 9 - pf C rss Reverse Transfer Capacitance f=.mhz - 6 - pf R g ate Resistance f=.mhz -.8.4 Ω Source-rain iode Symbol Parameter Test Conditions Min. Typ. Max. Units V S Forward On Voltage I S =, V S =V - -. V t rr Reverse Recovery Time I S =7, V S =V, - - ns Q rr Reverse Recovery Charge di/dt=/µs - 4 - nc Notes:.Pulse width limited by Max. junction temperature..pulse width <3us, duty cycle <%. 3.Surface mounted on in copper pad of FR4 board, t <sec ; 5 /W when mounted on Min. copper pad. THIS PROUCT IS SENSITIVE TO ELECTROSTTIC ISCHRE, PLESE HNLE WITH CUTION. USE OF THIS PROUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZE. PEC OES NOT SSUME NY LIBILITY RISIN OUT OF THE PPLICTION OR USE OF NY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY NY LICENSE UNER ITS PTENT RIHTS, NOR THE RIHTS OF OTHERS. PEC RESERVES THE RIHT TO MKE CHNES WITHOUT FURTHER NOTICE TO NY PROUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR ESIN.
P9465EM 3 3 I, rain Current () T =5 o C V 7.V 5.V V =3.V I, rain Current () T = 5 o C V 7.V 5.V V =3.V 3 4 5 6 V S, rain-to-source Voltage (V) 4 6 8 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig. Typical Output Characteristics 7.8 I =5 T =5 o C I =7 V =V R S(ON) (mω) 5 3 Normalized R S(ON).4..6 4 6 8 5 5 75 5 5 V S, ate-to-source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance v.s. ate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 5 5. 4. I S () 9 6 T j =5 o C T j =5 o C R S(ON) (mω) 3. V S = V S =V. 3..4.6.8. V S, Source-to-rain Voltage (V). 3 4 5 I, rain Current () Fig 5. Forward Characteristic of Fig 6. On-Resistance vs. Reverse iode rain Current 3
P9465EM 4 f=.mhz V S, ate to Source Voltage (V) 8 6 4 I =7 V S =V V S =5V V S =3V C (pf) C iss C oss C rss 5 5 Q, Total ate Charge (nc) 5 9 3 7 5 9 V S, rain-to-source Voltage (V) Fig 7. ate Charge Characteristics Fig 8. Typical Capacitance Characteristics uty factor=.5 I (). T =5 o C Single Pulse us ms ms ms s C Normalized Thermal Response (R thja ).....5.. Single Pulse P M t T uty factor = t/t Peak T j = P M x R thja + T a R thja = 5 /W....... V S, rain-to-source Voltage (V) t, Pulse Width (s) Fig 9. Maximum Safe Operating rea Fig. Effective Transient Thermal Impedance 4 V S =5V V I, rain Current () 3 T j =5 o C T j =5 o C Q S Q Q Charge Q 4 6 V S, ate-to-source Voltage (V) Fig. Transfer Characteristics Fig. ate Charge Waveform 4
Package Outline : SO-8 VNCE POWER ELECTRONICS CORP. Millimeters SYMBOLS MIN NOM MX 8 e 7 6 5 3 4 B E E.35.55.75..8.5 B.33.4.5 c.9..5 4.8 4.9 5. E 5.8 6.5 6.5 E 3.8 3.9 4. e L.38.7 TYP.54 TYP -.9 α. 4. 8..ll imension re In Millimeters..imension oes Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number 9465EM YWWSSS Package Code meet Rohs requirement ate Code (YWWSSS) Y:Last igit Of The Year WW:Week SSS:Sequence 5