MC24UV COMPLEMENTRY PIR ENHNCEMENT MOE MOSFET Product Summary evice V (BR)SS R S(ON) max Q 2V Q2-2V I max T = 25 C.5Ω @ V = 4.5V 3m.9Ω @ V =.8V 74m.Ω @ V = -4.5V -7m 2.Ω @ V = -.8V -46m escription and pplications This new generation MOSFET has been designed to minimize the on-state resistance (R S(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Power management functions Battery Operated Systems and Solid-State Relays Load switch Features and Benefits Low On-Resistance Low Gate Threshold Voltage V (th) <V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package ES Protected Gate to 2kV HBM Lead Free/RoHS Compliant (Note ) "Green" evice, Halogan and ntimony Free (Note 2) Qualified to EC-Q Standards for High Reliability Mechanical ata Case: SOT563 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-ST-2 Terminal Connections: See iagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-ST-22, Method 28 Weight:.3 grams (approximate) SOT563 G 2 S 2 Q Q 2 S G 2 ES PROTECTE TO 2kV Top View Bottom View Equivalent Circuit Ordering Information (Note 3) Part Number Case Packaging MC24UV-7 SOT563 3/Tape & Reel MC24UV-3 SOT563 /Tape & Reel Notes:. EU irective 22/95/EC (RoHS) & 2/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and ntimony free 2. iodes Inc. s Green policy can be found on our website at http://. 3. For packaging details, go to our website at http://. Marking Information C3 = Product Type Marking Code YM = ate Code Marking Y = Year (ex: Y = 2) M = Month (ex: 9 = September) ate Code Key Year 2 22 23 24 25 26 27 Code Y Z B C E Month Jan Feb Mar pr May Jun Jul ug Sep Oct Nov ec Code 2 3 4 5 6 7 8 9 O N MC24UV of February 22
MC24UV Maximum Ratings - Q N-CHNNEL @T = 25 C unless otherwise specified Characteristic Symbol Value Units rain-source Voltage V SS 2 V Gate-Source Voltage V S ±2 V Continuous rain Current (Note 5) V = 4.5V Steady T = 25 C 3 I State m T = 7 C 8 T t<s = 25 C 5 I m T = 7 C 9 Continuous rain Current (Note 5) V =.8V Steady T = 25 C 74 I State m T = 7 C 57 T t<s = 25 C 87 I m T = 7 C 7 Pulsed rain Current (μs pulse, duty cycle = %) I M 3 Maximum Body iode continuous Current I S 8 m Maximum Ratings - Q2 P-CHNNEL @T = 25 C unless otherwise specified Characteristic Symbol Value Units rain-source Voltage V SS -2 V Gate-Source Voltage V S ±8 V Continuous rain Current (Note 5) V = -4.5V Steady T = 25 C -7 I State m T = 7 C -55 T t<s = 25 C -82 I m T = 7 C -64 Continuous rain Current (Note 5) V = -.8V Steady T = 25 C -46 I State m T = 7 C -35 T t<s = 25 C -55 I m T = 7 C -42 Pulsed rain Current (μs pulse, duty cycle = %) I M -2 Maximum Body iode continuous Current I S -8 m Thermal Characteristics @T = 25 C unless otherwise specified Characteristic Symbol Value Units Total Power issipation (Note 4) P.45 W Steady state 28 C/W Thermal Resistance, Junction to mbient (Note 4) R t<s θj 2 C/W Total Power issipation (Note 5) P W Steady state 29 C/W Thermal Resistance, Junction to mbient (Note 5) R t<s θj 97 C/W Operating and Storage Temperature Range T J, T STG -55 to +5 C MC24UV 2 of February 22
MC24UV Electrical Characteristics - Q N-CHNNEL @T = 25 C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS (Note 6) rain-source Breakdown Voltage BV SS 2 - - V V = V, I = m Zero Gate Voltage rain Current T J = 25 C I SS - - n V S = 2V, V = V Gate-Source Leakage I S - - ± V = ±5V, V S = V μ - - ±4. V = ±8V, V S = V ON CHRCTERISTICS (Note 6) Gate Threshold Voltage V (th).5 -.9 V V S = V, I = 25μ -.3.48 V = 5.V, I = 2m -.35.5 V = 4.5V, I = 2m Static rain-source On-Resistance R S (ON) -.45.7 V Ω = 2.5V, I = 2m -.55.9 V =.8V, I = m -.65.5 V =.5V, I = 5m - 2 - V =.2V, I = m Forward Transfer dmittance Y fs -.4 - S V S = 3V, I = 2m iode Forward Voltage V S -.7.2 V V = V, I S = 5m, YNMIC CHRCTERISTICS (Note 7) Input Capacitance C iss - 37. - V pf S = V, V = V, Output Capacitance C oss - 6.5 - f =.MHz Reverse Transfer Capacitance C rss - 4.8 - Gate Resistance R g - 68 - Ω V S = V, V = V, Total Gate Charge Q g -.5 - V nc = 4.5V, V S = V, Gate-Source Charge Q gs -.7 - I = 25m Gate-rain Charge Q gd -. - Turn-On elay Time t (on) - 4.6 - Turn-On Rise Time t r - 7.28 - Turn-Off elay Time t (off) - 3.74 - Turn-Off Fall Time t f -.54 - Notes: 4. evice mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. evice mounted on FR-4 substrate PC board, 2oz copper, with inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. ns V = V, V = 4.5V, R L = 47Ω, R G = Ω, I = 2m 2. V = 4.5V.5 I, RIN CURRENT ().5..5 V = 2.5V V = 2.V V =.8V V =.5V V =.2V 2 3 4 5 V S, RIN-SOURCE VOLTGE (V) Fig. Typical Output Characteristics I, RIN CURRENT ()..5 V = 5V S T = 5 C T = 25 C T = 85 C T = 25 C T = -55 C.5.5 2 2.5 3 V, GTE SOURCE VOLTGE (V) Fig. 2 Typical Transfer Characteristics MC24UV 3 of February 22
MC24UV R S(ON), RIN-SOURCE ON-RESISTNCE ( Ω ) R S(ON), RIN-SOURCE ON-RESISTNCE (NORMLIZE) 2..6.2.8.4 V =.5V V =.8V V = 2.5V V = 4.5V V = 5.V.4.8.2.6 2 I, RIN-SOURCE CURRENT () Fig. 3 Typical On-Resistance vs. rain Current and Gate Voltage.6.4.2..8 V = 4.5V I =. V = 2.5.V I = 5m.6-5 -25 25 5 75 25 5 T J, JUNCTION TEMPERTURE ( C) Fig. 5 On-Resistance Variation with Temperature R S(ON), RIN-SOURCE ON-RESISTNCE ( Ω ) R S(ON), RIN-SOURCE ON-RESISTNCE ( Ω ).8.6.4.2 V = 4.5V T = 5 C T = 25 C T = 85 C T = 25 C T = -55 C.4.8.2.6 I, RIN CURRENT () Fig. 4 Typical rain-source On-Resistance vs. rain Current and Temperature.8.6.4.2 V = 2.5V I = 5m V = 4.5V I =. -5-25 25 5 75 25 5 T J, JUNCTION TEMPERTURE ( C) Fig. 6 On-Resistance Variation with Temperature.2.6 V (TH), GTE THRESHOL VOLTGE (V)..8.6.4.2 I = 25µ I = m -5-25 25 5 75 25 5 T, MBIENT TEMPERTURE ( C) Fig. 7 Gate Threshold Variation vs. mbient Temperature I, SOURCE CURRENT () S.2.8.4 T = 25 C.2.4.6.8..2 V S, SOURCE-RIN VOLTGE (V) Fig. 8 iode Forward Voltage vs. Current MC24UV 4 of February 22
MC24UV C, CPCITNCE (pf) 6 5 4 3 2 C iss C oss f = MHz C rss. 5 5 2 V S, RIN-SOURCE VOLTGE (V) Fig. 9 Typical Capacitance I SS, RIN-SOURCE LEKGE CURRENT (n), T = 5 C T = 25 C T = 85 C T = 25 C T = -55 C 2 4 6 8 2 4 6 8 2 V S, RIN-SOURCE VOLTGE (V) Fig. Typical rain-source Leakage Current vs. rain-source Voltage 5 V, GTE-SOURCE VOLTGE (V) 4 3 2 V S = V I = 25m I, RIN CURRENT ().. RS(on) Limited P = µs W C P W = s P W = s P W = ms P W = ms P W = ms P W = µ s..2.3.4.5.6 Q g, TOTL GTE CHRGE (nc) Fig. Gate-Charge Characteristics... V S, RIN-SOURCE VOLTGE (V) Fig. 2 SO, Safe Operation rea MC24UV 5 of February 22
MC24UV Electrical Characteristics - Q2 P-CHNNEL @T = 25 C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS (Note 6) rain-source Breakdown Voltage BV SS -2 - - V V = V, I = -m Zero Gate Voltage rain Current T J = 25 C I SS - - - n V S = -2V, V = V Gate-Source Leakage I S - - ±. V = ±5V, V S = V μ - - ±5. V = ±8V, V S = V ON CHRCTERISTICS (Note 6) Gate Threshold Voltage V (th) -.5 - -. V V S = V, I = -25μ -.67.97 V = -5V, I = -m.7. V = -4.5V, I = -m Static rain-source On-Resistance R S (ON) -.9.5 V Ω = -2.5V, I = -8m -.2 2. V = -.8V, I = -4m -.5 3. V = -.5V, I = -3m - 5 - V = -.2V, I = -m Forward Transfer dmittance Y fs -.7 - S V S = -3V, I = -m iode Forward Voltage V S - -.75 -.2 V V = V, I S = -33m, YNMIC CHRCTERISTICS (Note 7) Input Capacitance C iss - 46. - V pf S = V, V = V, Output Capacitance C oss - 7.2 - f =.MHz Reverse Transfer Capacitance C rss - 4.9 - Gate Resistance R g - 4.3 - Ω V S = V, V = V, Total Gate Charge V = -4.5V Q g -.5 - Total Gate Charge V = -V Q g -.85 - Gate-Source Charge Q gs -.9 - nc V S = -V, I = -25m Gate-rain Charge Q gd -.9 - Turn-On elay Time t (on) - 8.5 - V = -3V, V = -2.5V, Turn-On Rise Time t r - 4.3 - ns R L = 3Ω, R G = 25Ω, Turn-Off elay Time t (off) - 2.2 - I = -m Turn-Off Fall Time t f - 9.2 - Notes: 4. evice mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. evice mounted on FR-4 substrate PC board, 2oz copper, with inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing... -I, RIN CURRENT ().8.6.4.2 -I, RIN CURRENT ().8.6.4.2 T = 25 C 2 3 4 5 -V S, RIN -SOURCE VOLTGE (V) Fig. 3 Typical Output Characteristics 2 3 4 -V, GTE SOURCE VOLTGE(V) Fig. 4 Typical Transfer Characteristics MC24UV 6 of February 22
MC24UV R S(ON),RIN-SOURCE ON-RESISTNCE( Ω ) 2..8.6.4.2..8.6.4.2 V = -.8V V = - 2.5V V = -4.5V.2.4.6.8..2.4 -I, RIN SOURCE CURRENT Fig. 5 Typical On-Resistance vs. rain Current and Gate Voltage R S(ON), RIN-SOURCE ON-RESISTNCE( Ω ) T = 5 C.. -I, RIN SOURCE CURRENT () Fig. 6 Typical On-Resistance vs. rain Current and Temperature R S(ON), RIN-SOURCE ON-RESISTNCE (NORMLIZE)..6.4.2..8.6-5 -25 25 5 75 25 5 T J, JUNCTION TEMPERTURE ( C) Fig. 7 On-Resistance Variation with Temperature R S(ON), RIN-SOURCE ON-RESISTNCE ( Ω ) 2..5..5-5 -25 25 5 75 25 5 T J, JUNCTION TEMPERTURE ( C) Fig. 8 On-Resistance vs.temperature. -V (th), GTE THRESHOL VOLTGE (V).8.6.4.2 I = 25μ I = 3μ -I, SOURCE CURRENT () S.8.6.4.2 T = 25 C -5-25 25 5 75 25 5 T J, JUNCTION TEMPERTURE ( C) Fig. 9 Gate Threshold Variation vs. mbient Temperature.2.4.6.8..2.4 -V S, SOURCE-RIN VOLTGE (V) Fig. 2 iode Forward Voltage vs. Current MC24UV 7 of February 22
MC24UV C, JUNCTION CPCITNCE (pf) T 8 6 4 2 C iss C oss f = MHz 5 5 2 -V S, RIN-SOURCE VOLTGE (V) Fig. 2 Typical Junction Capacitance 8 -I SS, LEKGE CURRENT (n), C rss. T = 5 C T = 25 C T = 85C T = 25C 4 8 2 6 2 -V S, RIN-SOURCE VOLTGE(V) Fig. 22 Typical rain-source Leakage Current vs. Voltage 7 P = µs W P = s W µ V, GTE-SOURCE VOLTGE (V) 6 5 4 3 2 V S = -V I = -25m -I, RIN CURRENT ().. RS(on) Limited C P W = s P W = s P W = ms P W = ms P W = ms..2.3.4.5.6.7.8.9. Q g, TOTL GTE CHRGE (nc) Fig. 23 Gate-Charge Characteristics... -V S, RIN-SOURCE VOLTGE (V) Fig. 24 SO, Safe Operation rea r(t), TRNSIENT THERML RESISTNCE =.7 =.5 =.3. =. =.5 =.9 =.2 R θj(t) = r(t) * RθJ R θj = 275 C/W. =. P(pk) t =.5 t 2 T J - T = P * R θj(t) = Single Pulse uty Cycle, = t /t2......., t, PULSE URTION TIME (s) Fig. 25 Transient Thermal Response MC24UV 8 of February 22
MC24UV Package Outline imensions K G H B C L M SOT563 im Min Max Typ.5.3.2 B..25.2 C.55.7.6 - -.5 G.9.. H.5.7.6 K.55.6.6 L..3.2 M..8. ll imensions in mm Suggested Pad Layout Z G Y C2 C2 C imensions Value (in mm) Z 2.2 G.2 X.375 Y.5 C.7 C2.5 X MC24UV 9 of February 22
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