BFP Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier Outstanding G ms =. at.8 GHz Minimum noise figure NF min =.9 at.8 GHz Pbfree (RoHS compliant) and halogenfree package with visible leads Qualification report according to AECQ available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP ATs =B =E =C =E SOT Maximum Ratings at T A = C, unless otherwise specified Parameter Symbol Value Unit Collectoremitter voltage T A = C T A = C V CEO V. Collectoremitter voltage V CES Collectorbase voltage V CBO Emitterbase voltage V EBO Collector current I C 8 ma Base current I B 8 Total power dissipation ) P tot mw T S 77 C Junction temperature T J C Ambient temperature T A 6... Storage temperature T Stg 6... T S is measured on the emitter lead at the soldering point to the pcb 9
BFP Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 9 K/W Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO. V I C = ma, I B = Collectoremitter cutoff current I CES µa V CE = V, V BE = Collectorbase cutoff current I CBO na V CB = V, I E = Emitterbase cutoff current I EBO µa V EB =. V, I C = DC current gain I C = ma, V CE =. V, pulse measured h FE 8 For the definition of R thjs please refer to Application Note AN77 (Thermal Resistance Calculation) 9
BFP Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T GHz I C = ma, V CE = V, f = GHz Collectorbase capacitance V CB = V, f = MHz, V BE =, emitter grounded C cb.. pf Collector emitter capacitance V CE = V, f = MHz, V BE =, base grounded Emitterbase capacitance V EB =. V, f = MHz, V CB =, collector grounded Minimum noise figure I C = ma, V CE = V, f =.8 GHz, Z S = Z Sopt I C = ma, V CE = V, f = GHz, Z S = Z Sopt Power gain, maximum stable ) I C = ma, V CE = V, Z S = Z Sopt, Z L = Z Lopt, f =.8 GHz Power gain, maximum available ) I C = ma, V CE = V, Z S = Z Sopt, Z L = Z Lopt, f = GHz Transducer gain I C = ma, V CE = V, Z S = Z L = Ω, f =.8 GHz f = GHz Third order intercept point at output ) V CE = V, I C = ma, Z S =Z L = Ω, f =.8 GHz compression point at output I C = ma, V CE = V, Z S =Z L = Ω, f =.8 GHz C ce. C eb.6 NF min.9.. G ms. G ma 6 S e G ma = S e / S e (k(k²) / ), G ms = S e / S e IP value depends on termination of all intermodulation frequency components. Termination used for this measurement is Ω from. MHz to 6 GHz 6 8.. IP. m P 9
BFP Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) mw K/W Ptot RthJS....... D = 6 8 C T S Permissible Pulse Load P totmax /P totdc = ƒ(t p ) 7 6 s Collectorbase capacitance C cb = ƒ(v CB ) f = MHz t p. Ptotmax/ PtotDC D =....... Ccb pf.. 7 6 s... V t p V CB 9
BFP Third order Intercept Point IP =ƒ(i C ) (Output, Z S =Z L =Ω) V CE = parameter, f =.8GHz m Transition frequency f T = ƒ(i C ) f = GHz V CE = Parameter in V 6 V GHz IP 8 6 V.V V ft V. 8 6. 6 7 8 ma I C Power gain G ma, G ms = ƒ(i C ) V CE = V f = Parameter in GHz 6 7 ma 9 I C Power Gain G ma, G ms = ƒ(f), S ² = f (f) V CE = V, I C = ma G IC Gms 6 S ² Gma 6 7 ma 9 I C GHz 6 G 9
BFP Power gain G ma, G ms = ƒ (V CE ) I C = ma f = Parameter in GHz Noise figure F = ƒ(i C ) V CE = V, Z S = Z Sopt G F. 6.. f = 6GHz f = GHz f = GHz f = GHz f =.GHz f =.8GHz f =.9GHz... V V CE Noise figure F = ƒ(i C ) V CE = V, f =.8GHz 6 ma 8 I C Noise figure F = ƒ(f) V CE = V, Z S = Z Sopt F. F... ZS = Ohm ZS = Zsopt. IC = ma IC = ma 6 ma 8 I C GHz 6 f 6 9
BFP Source impedance for min. noise figure vs. frequency V CE = V, I C = ma / ma +j +j +j +j.ghz.8ghz.9ghz GHz GHz j GHz 6GHz ma ma j j j 7 9
BFP SPICE GP Model For the SPICE Gummel Poon (GP) model as well as for the Sparameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP SPICE GP model in the internet in MWO and ADSformat, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to GHz using typical devices. The BFP SPICE GP model reflects the typical DC and RFperformance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all Sparameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. 8 9
Package SOT BFP 9 9
BFP Edition 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9