6MBP5RTB6 IPMR3 series 6 / 5A 6 in onepackage Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrease in number of parts in builtin control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25 unless otherwise specified) Item bus voltage bus voltage (surge) bus voltage (short operating) CollectorEmitter voltage IN Collector current 1ms Duty=76.1% Collector power dissipation One transistor Junction temperature Input voltage of power supply for PreDriver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (CaseTerminal) Screw torque Mounting (M5) Terminal (M5) Symbol Rating Unit (surge) SC CES *1 IC ICP IC *2 PC *3 Tj CC *4 in *5 Iin ALM *6 IALM *7 Tstg Top iso *8 Min. 2.5.5.5 4 2 Max. 45 5 4 6 5 1 5 144 15 2 cc+.5 3 cc 2 125 1 AC2.5 3.5 *9 3.5 *9 A A A W ma ma k N m N m Fig.1 Measurement of case temperature *1 : ces shall be applied to the input voltage between terminal P and U or or W, N and U or or W. *2 : 125/FWD Rth(jc)/( x F MAX)=125/1.263/(5 x 2.6)x1=76.1% *3 : Pc=125/IGBT Rth(jc)=125/.87=144W [Inverter] *4 : cc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 1. *5 : in shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 1. *6 : ALM shall be spplied to the voltage between terminal No. 16 and 1. *7 : IALM shall be applied to the input current to terminal No. 16. *8 : 5Hz/6Hz sine wave 1 minute. *9 : Recommendable alue : 2.5 to 3. N m
6MBP5RTB6 IGBTIPM Electrical characteristics (at Tc=Tj=25, cc=15 unless otherwise specified.) Main circuit Item Symbol Condition Min. Typ. Max. Unit IN Turnon time Turnoff time Collector current at off signal input CollectorEmitter saturation voltage Forward voltage of FWD Reverse recovery time Maximum Avalanche Energy (A nonrepetition) Control circuit Item Symbol Condition Min. Typ. Max. Unit Supply current of Pline side predriver(one unit) Supply current of Nline side predriver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Limiting resistor for alarm cp ICCN in(th) Z talm RALM Switching Trequency : to 15kHz Tc=2 to 125 Fig.7 ON OFF Rin=2k ohm Tc=2 Fig.2 Tc=25 Fig.2 Tc=125 Fig.2 1. 1.25 1.1 1425 1.35 1.6 8. 2. 15 18 65 1.7 1.95 4. 1575 ma ma ms ms ms ohm Protection Section ( cc=15) Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under oltage Protection Level Under oltage Protection Hysteresis ICES CE(sat) F ton toff trr PA IOC tdoc tsc TjOH TjH TCOH TCH U H CE=6 in terminal open. =5A =5A Chip =3,Tj=125 IC=5A Fig.1, Fig.6 Terminal Chip Terminal =3, IC=5A Fig.1, Fig.6 Internal wiring inductance=5nh Main circuit wiring inductace=54nh Tj=125 Tj=125 Tj=125 Fig.4 surface of IGBT chips =, =A, Case temperature 1. ma 2.5 2. 2.6 1.6 1.2 µs 3.6.3 3 mj Item Symbol Condition Min. Typ. Max. Unit 75 5 8 15 2 11 125 2 11. 12.5.2.5 A µs µs Thermal characteristics( Tc=25) Item Symbol Min. Typ. Max. Unit Junction to Case thermal resistance IN IGBT Rth(jc).87 /W FWD Rth(jc) 1.263 /W Case to fin thermal resistance with compound Rth(cf).5 /W Noise Immunity ( =3, cc=15, Test Circuit Fig.5) Item Condition Min. Typ. Max. Unit Common mode rectangular noise Pulse width 1µs, polarity ±,1minuets Judge : no overcurrent, no miss operating ±2. k Common mode lightning surge Rise time 1.2µs, Fall time 5µs Interval 2s, 1 times ±5. k Judge : no overcurrent, no miss operating Recommendable value Item Symbol Min. Typ. Max. Unit Bus oltage Operating Supply oltage of PreDriver Screw torque (M5) CC 13.5 2.5 15. 4 16.5 3. Nm Weight Item Symbol Min. Typ. Max. Unit Weight Wt 45 g *9 : (For 1 device, Case is under the device)
6MBP5RTB6 IGBTIPM in in(th) on in(th) trr 9% 5% 9% 1% ton toff Figure 1. Switching Time Waveform Definitions /in ge (Inside IPM) on Gate on off Gate off on off Fault (Inside IPM) normal /ALM alarm talm>max. talm>max. talm Fault : Overcurrent, Overheat or Undervoltage Figure 2. Input / Output Timing Diagram 2ms(typ.) tsc IALM IALM IALM Figure. 4 Definition of tsc cc P 15 Sw1 ccu 2k inu GNDU P U CT + AC2 15 2k IPM L + 3 in HCPL 454 GND N Figure 6. Switching Characteristics Test Circuit cc 15 2k inx W Sw2 GND N Earth Cooling Fin Figure 5. Noise Test Circuit 47p Noise 15 c cc P I PM U in P.G W +8 fsw GND N Figure 7. c Test Circuit
6MBP5RTB6 IGBTIPM Block diagram ccu 3 P inu 2 PreDriver GNDU 1 cc 6 U in 5 GND 4 ccw 9 PreDriver inw 8 GNDW 7 cc 11 PreDriver W inx 13 PreDriver GND 1 iny 14 PreDriver inz 15 PreDriver NC B 12 NC N Predriver include following functions 1 Amplifier for drive ALM 16 RALM 1.5kΩ Over heating protection circuit 2 Short circuit protection 3 Under voltage lockout circuit 4 Over current protection 5 IGBT chip over heating protection Outline drawings, mm Mass : 45g
6MBP5RTB6 IGBTIPM Characteristics Control circuit characteristics (Respresentative) Power supply current vs. Switching frequency Nside Tc=125 Pside 6 2.5 Input signal threshold voltage vs. Power supply voltage Tj=25 Tj=125 Power supply current c (ma) 5 4 3 2 1 Input signal threshold voltage in ( ON), in ( OFF), () 2. 1.5 1..5 5 1 15 2 25 Switching frequency fsw (khz) 12 13 14 15 16 17 18 Power supply voltage cc () Under voltage vs. Junction temperature Under voltage hysterisis vs. Junction temperature 14 1. Under voltage UT () 12 1 8 6 4 2 Undervoltage hysterisis H ().8.6.4.2 2 4 6 8 1 12 14 2 4 6 8 1 12 14 Junction temperature Tj () Junction temperature Tj () Alarm hold time vs. Power supply voltage Overheating characteristics TCOH,TjOH,TCH,TjH vs. CC 3. 2 Alarm hold time t ALM (msec.) 2.5 2. 1.5 1..5 Overheating protection T COH,T joh () OH hysterisis T CH,T jh () 15 1 5 12 13 14 15 16 17 18 Power supply voltage cc () 12 13 14 15 16 17 18 Power supply voltage cc ()
6MBP5RTB6 IGBTIPM Main circuit characteristics (Respresentative) 8 7 Collector current vs. CollectorEmitter voltage Tj=25(Chip) Collector current vs. CollectorEmitter voltage Tj=25(Terminal) 8 7 6 6 5 4 3 2 5 4 3 2 1 1.5 1 1.5 2 2.5 3 3.5 CollectorEmitter voltage CE ().5 1 1.5 2 2.5 3 3.5 CollectorEmitter voltage CE () 8 Collector current vs. CollectorEmitter voltage Tj=125(Chip) 8 Collector current vs. CollectorEmitter voltage Tj=125(Terminal) 7 7 6 5 4 3 2 6 5 4 3 2 1 1.5 1 1.5 2 2.5 3 3.5 CollectorEmitter voltage CE ().5 1 1.5 2 2.5 3 3.5 CollectorEmitter voltage CE () 1 Forward current vs. Forward voltage (Chip) 1 Forward current vs. Forward voltage (Terminal) 8 8 Forward current I F (A) 6 4 2 Forward current I F (A) 6 4 2.5 1 1.5 2 2.5 Foeward voltage F ().5 1 1.5 2 2.5 Foeward voltage F ()
6MBP5RTB6 IGBTIPM 6 Switching Loss vs. Collector current Edc=3, cc=15, Tj=25 14 Switching Loss vs. Collector current Edc=3, cc=15, Tj=125 Switching loss Eon,Eoff, Err (mj/cycle) 5 4 3 2 1 Switching loss Eon,Eoff, Err (mj/cycle) 12 1 8 6 4 2 2 4 6 8 Collector current IC (A) 2 4 6 8 Collector current IC (A) 15 Reverse biased safe operating area cc=15, Tj < = 125 Transient thermal resistance 1 5 Thermal resistance Rth(jc) (/W) 1.1 1 2 3 4 5 6 7 CollectorEmitter voltage CE ().1.1.1.1 1 Pulse width Pw (sec.) 15 Power derating for IGBT (per device) 15 Power derating for FWD (per device) Collector power dissipation Pc (W) 1 5 Collector power dissipation Pc (W) 1 5 2 4 6 8 1 12 14 16 Case temperature Tc () 2 4 6 8 1 12 14 16 Case temperature Tc ()
6MBP5RTB6 IGBTIPM 1 Switching time vs. Collector current Edc=3, cc=15, Tj=25 1 Switching time vs. Collector current Edc=3, cc=15, Tj=125 Switching time ton,toff,tf (nsec.) 1 1 Switching time ton,toff,tf (nsec.) 1 1 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 Reverse recovery characteristics trr, Irr, vs. IF Reverse recovery current Irr (A) Reverse recovery time trr (nsec.) 1 1 1 2 3 4 5 6 7 8 Foeward current IF (A)