2N6344. Thyristors. Surface Mount V > 2N6344. Description

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Transcription:

2N6344 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features Blocking Voltage to 800 V All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Pin Out Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in all Four Quadrants For 400 Hz Operation, Consult Factory Pb Free Package is Available Functional Diagram CASE 221A STYLE 4 1 2 Additional nformation Datasheet Resources Samples

Maximum Ratings and Thermal Characteristics (T J = 25 C unless otherwise noted) Rating Symbol Value Unit *Peak Repetitive Off-State Voltage (Note 1) (T J = -40 to 110 C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6344 2N6349 V DRM, V RRM 600 800 V On-State RMS Current (T C = +80 C) Full Cycle Sine Wave 50 to 60 Hz (T C = +90 C) 8.0 T (RMS) 4.0 A Peak Non Repetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, T C = +25 C) Preceded and followed by rated current TSM 100 A Circuit Fusing Considerations (t = 8.3 ms) 2t 40 A²s Peak Gate Power (T C = +80 C, Pulse Width = 2 µs) P GM 20 W Average Gate Power (T C = +80 C, t = 8.3 ms) P G(AV) 0.5 W Peak Gate Current (T C = +80 C, Pulse Width = 2.0 µs) GM 2.0 A Peak Gate Voltage (T C = +80 C, Pulse Width = 2.0 µs) V GM 10 V Operating Junction Temperature Range T J -40 to +150 C Storage Temperature Range T stg -40 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ndicates JEDEC Registered Data. 1. V DRM and V RRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case R 8JC 2.2 C/W Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T L 260 C ndicates JEDEC Registered Data..

Electrical Characteristics - OFF (T C = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit *Peak Repetitive Blocking Current T J = 25 C (V D = V DRM = V RRM ; Gate Open) T J = 100 C DRM, RRM - - 1.0 µa - - 2.0 ma Electrical Characteristics - ON (T C = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak On State Voltage ( TM = ±11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%) V TM - 1.3 1.55 V Gate Trigger Current (Continuous dc) (V D = 12 Vdc, R L = 100 Ω) Quadrant : MT2(+), G(+) Both - 12 50 Quadrant : MT2(+), G( ) 2N6349-12 75 Quadrant : MT2( ), G( ) Both - 20 50 Quadrant V: MT2( ), G(+) 2N6349-35 75 GT ma MT2(+), G(+); MT2( ), G( ) TC = 40 C - - 100 MT2(+), G( ); MT2( ), G(+) TC = 40 C - - 125 Gate Trigger Voltage (Continuous dc) (V D = 12 Vdc, R L = 100 Ω) Quadrant : MT2(+), G(+) Both C 2.0 Quadrant : MT2(+), G( ) 2N6349 2.5 Quadrant : MT2( ), G( ) Both 2.0 Quadrant V: MT2( ), G(+) 2N6349 2.5 V GT V MT2(+), G(+); MT2( ), G( ) TC = 40 C - 2.5 MT2(+), G( ); MT2( ), G(+) TC = 40 C - 3.0 Gate Non Trigger Voltage (Continuous dc) (V D = Rated V DRM, R L = 10 k Ω, T J = 100 C) V GD.02 - - V MT2(+), G(+); MT2( ), G( ); MT2(+), G( ); MT2( ), G( ) TC = 25 C - 6.0 40 H TC = -40 C - - 75 ma Turn-On Time (V D = Rated V DRM, TM = 11 A, G T = 120 ma, Rise Time = 0.1 µs, Pulse Width = 2 µs) t gt - 1.5 2.0 µs ndicates JEDEC Registered Data. Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Commutation Voltag (V D = Rated V DRM, TM = 11 A, Commutating di/dt = 4.0 A/ms, Gate Unenergized, TC = 80 C) dv/dt(c) 5.0 V/µs

Voltage Current Characteristic of Triacs (Bidirectional Device) Symbol Parameter V DRM Peak Repetitive Forward Off State Voltage DRM V RRM Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage RRM Peak Reverse Blocking Current V TM Maximum On State Voltage H Holding Current Quadrant Definitions for a Triac Quadrant Quadrant Quadrant Quadrant V All polarities are referenced to MT1. With in phase signals (using standard AC lines) quadrants and are used.

Ratings and Characteristic Curves Figure 1. RMS Current Derating Figure 2. On State Power Dissipation Figure 3. Typical Gate Trigger Voltage Figure 4. Typical Gate Trigger Current

Figure 7. Maximum On-State Characteristics Figure 8. Typical Holding Current Figure 9. Maximum Allowable Surge Current Figure 10. Thermal Response

Dimensions Part Marking System SEATNG PLANE B F T C S Q 4 A H Z 12 3 K U 1 2 CASE 221A STYLE 4 L R V J G N D Dim nches Millimeters Min Max Min Max A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 1.15 Z 0.080 2.04 Pin Assignment Ordering nformation Device Package Shipping 2N6344 2N6344G 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 TO-220AB TO-220AB (Pb-Free) 500 Units / Box 1. DMENSONNG AND TOLERANCNG PER ANS Y14.5M, 1982. 2. CONTROLLNG DMENSON: NCH. 3. DMENSON Z DEFNES A ZONE WHERE ALL BODY AND LEAD RREGULARTES ARE ALLOWED. Disclaimer Notice - nformation furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics.