PERFORMANCE CHARACTERISTICS OF EPAD PRECISION MATCHED PAIR MOSFET ARRAY

TM ADVANCED LINEAR DEVICES, INC. e EPAD E N A B L E D PERFORMANCE CHARACTERISTICS OF EPAD PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION ALDxx/ALD9xx/ALDxx/ALD9xx are high precision monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD s proven EPAD CMOS technology. These devices are intended for low voltage, small signal applications. ALD s Electrically Programmable Analog Device (EPAD) technology provides a family of matched transistors with a range of precision threshold values. All members of this family are designed and actively programmed for exceptional matching of device electrical characteristics. Threshold values range from -.V Depletion to +.V Enhancement devices, including standard products specified at -.V, -.V, -.V, +.V, +.V, +.V, +.V, +.V, and +.V. ALD can also provide any customer desired value between -.V and +.V. For all these devices, even the depletion and zero threshold transistors, ALD EPAD technology enables the same well controlled turn-off, subthreshold, and low leakage characteristics as standard enhancement mode MOSFETs. With the design and active programming, even units from different batches and different dates of manufacture have well matched characteristics. As these devices are on the same monolithic chip, they also exhibit excellent tempco tracking. This EPAD MOSFET Array product family (EPAD MOSFET) is available in the three separate categories, each providing a distinctly different set of electrical specifications and characteristics. The first category is the ALD/ALD9 Zero-Threshold mode EPAD MOSFETs. The second category is the ALDxx/ ALD9xx enhancement mode EPAD MOSFETs. The third category is the ALDxx/ALD9xx depletion mode EPAD MOSFETs. (The suffix xx denotes threshold voltage in.v steps, for example, xx = denotes.v). The ALD/ALD9 (quad/dual) are EPAD MOSFETs in which the individual threshold voltage of each MOSFET is fixed at zero. The threshold voltage is defined as I DS = µa @ V DS =.V when the gate voltage V GS =.V. Zero threshold devices operate in the enhancement region when operated above threshold voltage and current level (V GS >.V and I DS > µa) and subthreshold region when operated at or below threshold voltage and current level (V GS <=.V and I DS < µa). This device, along with other very low threshold voltage members of the product family, constitute a class of EPAD MOSFETs that enable ultra low supply voltage operation and nanopower type of circuit designs, applicable in either analog or digital circuits. The ALDxx/ALD9xx (quad/dual) product family features precision matched enhancement mode EPAD MOSFET devices, which require a positive bias voltage to turn on. Precision threshold values such as +.V, +.V, +.V are offered. No conductive channel exists between the source and drain at zero applied gate voltage for these devices, except that the +.V version has a subthreshold current at about na. The ALDxx/ALD9xx (quad/dual) features depletion mode EPAD MOSFETs, which are normally-on devices when the gate bias voltage is at zero volts. The depletion mode threshold voltage is at a negative voltage level at which the EPAD MOSFET turns off. Without a supply voltage and/or with V GS =.V the EPAD MOSFET device is already turned on and exhibits a defined and controlled on-resistance between the source and drain terminals. The ALDxx/ALD9xx depletion mode EPAD MOSFETs are different from most other types of depletion mode MOSFETs and certain types of JFETs in that they do not exhibit high gate leakage currents and channel/junction leakage currents. When negative signal voltages are applied to the gate terminal, the designer/user can depend on the EPAD MOSFET device to be controlled, modulated and turned off precisely. The device can be modulated and turned-off under the control of the gate voltage in the same manner as the enhancement mode EPAD MOSFET and the same device equations apply. EPAD MOSFETs are ideal for minimum offset voltage and differential thermal response, and they are used for switching and amplifying applications in low voltage (V to V or +/-.V to +/-V) or ultra low voltage (less than V or +/-.V) systems. They feature low input bias current (less than pa max.), ultra low power (microwatt) or Nanopower (power measured in nanowatt) operation, low input capacitance and fast switching speed. These devices can be used where a combination of these characteristics are desired. KEY APPLICATION ENVIRONMENT EPAD MOSFET Array products are for circuit applications in one or more of the following operating environments: * Low voltage: V to V or +/-.V to +/-V * Ultra low voltage: less than V or +/-.V * Low power: voltage x current = power measured in microwatt * Nanopower: voltage x current = power measured in nanowatt * Precision matching and tracking of two or more MOSFETs PIN CONFIGURATIONS G N D N QUAD V - V - M M S V + V - V - D N M M G N 7 V - V - 9 G N D N S SCL, PCL PACKAGES DUAL V- V- 7 M M V- G N D N V + S D N G N G N D N SAL, PAL PACKAGES *IC pins are internally connected, connect to V- V- Advanced Linear Devices, Inc., Vers.. www.aldinc.com of

ELECTRICAL CHARACTERISTICS The turn-on and turn-off electrical characteristics of the EPAD OSFET products are shown in the Drain-Source On Current vs Drain-Source On Voltage and Drain-Source On Current vs Gate- Source Voltage graphs. Each graph show the Drain-Source On Current versus Drain-Source On Voltage characteristics as a function of Gate-Source voltage in a different operating region under different bias conditions. As the threshold voltage is tightly specified, the Drain-Source On Current at a given gate input voltage is better controlled and more predictable when compared to many other types of MOSFETs. EPAD MOSFETs behave similarly to a standard MOSFET, therefore classic equations for a n-channel MOSFET applies to EPAD MOSFET as well. The Drain current in the linear region (V DS < V GS - V GS(th) ) is given by: where: PERFORMANCE CHARACTERISTICS OF EPAD PRECISION MATCHED PAIR MOSFET FAMILY I DS = u. C OX. W/L. [V GS - V GS(th) - V DS /]. V DS u = Mobility C OX = Capacitance / unit area of Gate electrode V GS = Gate to Source voltage V GS(th) = Turn-on threshold voltage V DS = Drain to Source voltage W = Channel width L = Channel length In this region of operation the I DS value is proportional to V DS value and the device can be used as a gate-voltage controlled resistor. For higher values of V DS where V DS >= V GS - V GS(th), the saturation current I DS is now given by (approx.): I DS = u. C OX. W/L. [V GS - V GS(th) ] SUB-THRESHOLD REGION OF OPERATION Low voltage systems, namely those operating at V,.V or less, typically require MOSFETs that have threshold voltage of V or less. The threshold, or turn-on, voltage of the MOSFET is a voltage below which the MOSFET conduction channel rapidly turns off. For analog designs, this threshold voltage directly affects the operating signal voltage range and the operating bias current levels. At or below threshold voltage, an EPAD MOSFET exhibits a turnoff characteristic in an operating region called the subthreshold region. This is when the EPAD MOSFET conduction channel rapidly turns off as a function of decreasing applied gate voltage. The conduction channel induced by the gate voltage on the gate electrode decreases exponentially and causes the drain current to decrease exponentially. However, the conduction channel does not shut off abruptly with decreasing gate voltage. Rather, it decreases at a fixed rate of approximately mv per decade of drain current decrease. Thus, if the threshold voltage is +.V, for example, the drain current is µa at V GS = +.V. At V GS = +.9V, the drain current would decrease to.µa. Extrapolating from this, the drain current is.µa (na) at V GS = -.V, na at V GS = -.V, and so forth. This subthreshold characteristic extends all the way down to current levels below na and is limited by other currents such as junction leakage currents. At a drain current to be declared zero current by the user, the V GS voltage at that zero current can now be estimated. Note that using the above example, with V GS(th) = +.V, the drain current still hovers around na when the gate is at zero volts, or ground. LOW POWER AND NANOPOWER When supply voltages decrease, the power consumption of a given load resistor decreases as the square of the supply voltage. So one of the benefits in reducing supply voltage is to reduce power consumption. While decreasing power supply voltages and power consumption go hand-in-hand with decreasing useful AC bandwidth and at the same time increases noise effects in the circuit, a circuit designer can make the necessary tradeoffs and adjustments in any given circuit design and bias the circuit accordingly. With EPAD MOSFETs, a circuit that performs a specific function can be designed so that power consumption can be minimized. In some cases, these circuits operate in low power mode where the power consumed is measure in micro-watts. In other cases, power dissipation can be reduced to the nano-watt region and still provide a useful and controlled circuit function operation. ZERO TEMPERATURE COEFFICIENT (ZTC) OPERATION For an EPAD MOSFET in this product family, there exist operating points where the various factors that cause the current to increase as a function of temperature balance out those that cause the current to decrease, thereby canceling each other, and resulting in net temperature coefficient of near zero. One of this temperature stable operating point is obtained by a ZTC voltage bias condition, which is.v above a threshold voltage when V GS = V DS, resulting in a temperature stable current level of about µa. For other ZTC operating points, see ZTC characteristics. PERFORMANCE CHARACTERISTICS Performance characteristics of the EPAD MOSFET product family are shown in the following graphs. In general, the threshold voltage shift for each member of the product family causes other affected electrical characteristics to shift with an equivalent linear shift in V GS(th) bias voltage. This linear shift in V GS causes the subthreshold I-V curves to shift linearly as well. Accordingly, the subthreshold operating current can be determined by calculating the gate voltage drop relative from its threshold voltage, V GS(th). R DS(ON) AT V GS = GROUND Several of the EPAD MOSFETs produce a fixed resistance when their gate is grounded. For ALD, the drain current is µa at V DS =.V and V GS =.V. Thus, just by grounding the gate of the ALD, a resistor with R DS(ON) = ~KΩ is produced. When an ALD gate is grounded, the drain current I DS =.µa @ V DS =.V, producing R DS(ON) =.KΩ. Similarly, ALD and ALD produce drain currents of 77µA and µa, respectively, at V GS =.V, and R DS(ON) values of.kω and Ω, respectively. MATCHING CHARACTERISTICS A key benefit of using matched-pair EPAD MOSFET is to maintain temperature tracking. In general, for EPAD MOSFET matched pair devices, one device of the matched pair has gate leakage currents, junction temperature effects, and drain current temperature coefficient as a function of bias voltage that cancel out similar effects of the other device, resulting in a temperature stable circuit. As mentioned earlier, this temperature stability can be further enhanced by biasing the matched-pairs at Zero Tempco (ZTC) point, even though that could require special circuit configuration and power consumption design consideration. ALDxx/ALD9xx/ALDxx/ALD9xx Advanced Linear Devices of PERFORMANCE CHARACTERISTICS, Vers..

TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS T A = + C VGS - VGS(th) = +V VGS - VGS(th) = +V VGS - VGS(th) = +V VGS - VGS(th) = +V VGS - VGS(th) = +V (Ω) vs. T A = + C VGS = VGS(th) + V VGS = VGS(th) + V DRAIN-SOURCE ON VOLTAGE (µa) FORWARD TRANSFER CHARACTERISTICS T A = + C V DS = +V V GS(th) = -.V V GS(th) =.V V GS(th) = +.V V GS(th) = -.V V GS(th) = -.V V GS(th) = +.V V GS(th) = +.V TRANSCONDUCTANCE (ma/v)..... TRANSCONDUCTANCE vs. AMBIENT TEMPERATURE - - - - 7 (na).. SUBTHRESHOLD FORWARD TRANSFER CHARACTERISTICS - V GS(th) = -.V - T A = + C V DS = +.V - V GS(th) = -.V V GS(th) = -.V - V GS(th) =.V V GS(th) = +.V V GS(th) = +.V V GS(th) = +.V (na).. SUBTHRESHOLD FORWARD TRANSFER CHARACTERISTICS V DS = +.V Slope = ~ mv/decade V GS(th) -. V GS(th) -. V GS(th) -. V GS(th) -. V GS(th) -. V GS(th) ALDxx/ALD9xx/ALDxx/ALD9xx Advanced Linear Devices of PERFORMANCE CHARACTERISTICS, Vers..

TYPICAL PERFORMANCE CHARACTERISTICS (cont.), BIAS CURRENT vs. AMBIENT TEMPERATURE - C - C C +7 C + C (µa), BIAS CURRENT vs. AMBIENT TEMPERATURE Zero Temperature Coefficient (ZTC) + C - C VGS(th)- VGS(th) VGS(th)+ VGS(th)+ VGS(th)+ VGS(th)+ V GS(th) V GS(th) +. V GS(th) +. V GS(th) +. V GS(th) +. V GS(th) +. GATE- AND DRAIN-SOURCE VOLTAGE (V GS = V DS ) GATE- AND DRAIN-SOURCE VOLTAGE (V GS = V DS ) (µa).. vs. T A = + C V GS = -.V to +.V VDS = +.V VDS = +V VDS = +V. VDS = +V (KΩ) V GS(th) + V GS(th) + V GS(th) + V GS(th) + V GS(th) V GS(th) - GATE-SOURCE VOLTAGE vs. V DS = R ON I DS(ON) D VGS S VDS IDS(ON) VDS = +.V TA = + C VDS = +.V TA = + C VDS = +V TA = + C VDS = +V TA = + C. (µa) vs. OUTPUT VOLTAGE OFFSET VOLTAGE vs. AMBIENT TEMPERATURE T A = + C VDS = +V VDS = +V VDS = +V OFFSET VOLTAGE (mv) - - - - REPRESENTATIVE UNITS V GS(th) V GS(th) + V GS(th) + V GS(th) + V GS(th) + V GS(th) + - - 7 OUTPUT VOLTAGE ALDxx/ALD9xx/ALDxx/ALD9xx Advanced Linear Devices of PERFORMANCE CHARACTERISTICS, Vers..

TYPICAL PERFORMANCE CHARACTERISTICS (cont.) GATE LEAKAGE CURRENT vs. AMBIENT TEMPERATURE GATE SOURCE VOLTAGE vs. GATE LEAKAGE CURRENT (pa). IGSS. - - 7 VGS(th)+ VGS(th)+ VGS(th)+ VGS(th)+ VGS(th) + C + C.V V DS.V VGS D S VDS IDS(ON) (KΩ) DRAIN-GATE DIODE CONNECTED VOLTAGE TEMPCO (mv/ C) DRAIN-GATE DIODE CONNECTED VOLTAGE TEMPCO vs.. -. - - C T A + C (µa) TRANSCONDUCTANCE (mω - )..... TRANSFER CHARACTERISTICS T A = + C V DS = +V V GS(th) = -.V - - V GS(th) = -.V V GS(th) = -.V V GS(th) =.V V GS(th) = +.V V GS(th) = +.V V GS(th) = +.V ZERO TEMPERATURE COEFFICIENT CHARACTERISTICS SUBTHRESHOLD CHARACTERISTICS GATE-SOURCE VOLTAGE...... V GS(th) = -.V V GS(th) = -.V, -.V,.V, +.V, +.V, +.V.... DRAIN-SOURCE ON VOLTAGE. GATE-SOURCE VOLTAGE..... VGS(th) = +.V TA = + C VGS(th) = +.V TA = + C. VGS(th) = +.V TA = + C VGS(th) = +.V -. TA = + C. (na) ALDxx/ALD9xx/ALDxx/ALD9xx Advanced Linear Devices of PERFORMANCE CHARACTERISTICS, Vers..

TYPICAL PERFORMANCE CHARACTERISTICS (cont.) TARNCONDUCTANCE (mω - )..9... TRANCONDUCTANCE vs. T A = + C V DS = +V THRESHOLD VOTAGE..... V t =.V THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE I DS = +µa V DS = +.V V t = +.V V t = +.V V t = +.V V t = +.V - - 7. NORMALIZED SUBTHRESHOLD CHARACTERISTICS RELATIVE TO GATE THRESHOLD VOLTAGE. SUBTHRESHOLD FORWARD TRANSFER CHARACTERISTICS GATE-SOURCE VOLTAGE VGS - VGS(th).. -. -. -. + C V DS = +.V + C THRESHOLD VOLTAGE.. -. -. -. I DS = +µa V DS = +.V VGS(th) =.V VGS(th) = -.V VGS(th) = -.V VGS(th) = -.V -.. (na) -. - 7 ALDxx/ALD9xx/ALDxx/ALD9xx Advanced Linear Devices of PERFORMANCE CHARACTERISTICS, Vers..