Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications. Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.51 14. B 2.87 73. C 1.89 48. D 4.88±.1 124.±.25 E 2.24±.1 57.±.25 F 1.18 3. G.43 11. H 1.7 27.15 J.2 5. K 1.65 42. Dimensions Inches Millimeters L.69±.1 17.5±.25 M.38 9.75 N.2 5. P.22 5.5 Q 1.44 36.5 R.16 4. S M6 Metric M6 T.63 Min. 16. Min. U.11 x.2 2.8 x.5 V.28 Dia. 7. Dia. Features: -4 to 15 C Extended Temperature Range % Dynamic Tested % Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules Copper Baseplate Creepage and Clearance Meet IEC 677-1 Rugged SWSOA and RRSOA Applications: High Voltage Power Supplies Medium Voltage Drives Motor Drives Traction 8/18 Rev. 4 1
Absolute Maximum Ratings, T j = 25 C unless otherwise specified Ratings Symbol Units Junction Temperature T j -4 to +15 C Storage Temperature T stg -4 to + C Collector-Emitter Voltage (V GE = V) V CES T j = -4 C 58 Volts T j = +25 C 63 Volts T j = + C 65 Volts Gate-Emitter Voltage (V CE = V) V GES ±2 Volts Collector Current (T C = 11 C) I C 85 Amperes Peak Collector Current (Pulse) I CM 17 *2 Amperes Diode Forward Current (T C = 12 C) *1 I F 85 Amperes Diode Forward Surge Current (Pulse) *1 I FM 17 *2 Amperes Maximum Collector Dissipation P C 1 Watts (T C = 25 C, IGBT Part, T j(max) :s 15 C) Mounting Torque, M6 Terminal Screws 44 in-lb Mounting Torque, M6 Mounting Screws 44 in-lb Module Weight (Typical) 9 Grams Isolation Voltage (Charged Part to Baseplate, AC 6Hz 1 min.) V iso 1.2 9. kvolts Partial Discharge Q pd 1 pc (V1 = 69 V RMS, V2 = 52 V RMS, f = 6Hz (Acc. to IEC 1287)) Maximum Short-Circuit Pulse Width, t psc 1 μs (V CC 45V, V GE = ±15V, T j = C) Electrical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES V CE = V CES, V GE = V, T j = 25 C 3 ma V CE = V CES, V GE = V, T j = C 3 ma Gate Leakage Current I GES V GE = V GES, V CE = V.5 μa Gate-Emitter Threshold Voltage V GE(th) I C = 13mA, V CE = 1V 5.8 6.3 6.8 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 85A, V GE = 15V, T j = 25 C 3.8 *3 Volts I C = 85A, V GE = 15V, T j = C 4.8 5.6 Volts Total Gate Charge Q G V CC = 36V, I C = 85A, V GE = 15V 1.5 μc Emitter-Collector Voltage *1 V EC I E = 85A, V GE = V, T j = 25 C 3.3 Volts *1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. *3 Pulse width and repetition rate should be such that device junction temperature rise is negligible. I E = 85A, V GE = V, T j = C 3.4 4.2 Volts 2 8/18 Rev. 4
Electrical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies 15 nf Output Capacitance C oes V GE = V, V CE = 1V.95 nf Reverse Transfer Capacitance C res f = khz.44 nf Turn-on Delay Time t d(on) V CC = 32V, I C = 85A,.55 μs Rise Time t r V GE = ±15V,.2 μs Turn-off Delay Time t d(off) R G(on) = 3Ω, R G(off) = 3Ω, 9.55 μs Fall Time t f Inductive Load.61 μs Turn-on Switching Energy E on T j = C, I C = 85A, V GE = ±15V, 46 mj Turn-off Switching Energy E off R G(on) = 3Ω, R G(off) = 3Ω, V CC = 32V, Inductive Load 5 mj Diode Reverse Recovery Time *1 t rr V CC = 32V, I E = 85A,.7 μs Diode Reverse Recovery Charge *1 Q rr V GE = ±15V, R G(on) = 3Ω, *3 μc Diode Reverse Recovery Energy E rec Inductive Load, T j = C 2 mj Stray Inductance (C1-E2) L SCE 6 nh Lead Resistance Terminal-Chip R CE.8 mω Thermal and Mechanical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case *4 R th(j-c) Q Per IGBT. C/W Thermal Resistance, Junction to Case *4 R th(j-c) D Per FWDi.175 C/W Contact Thermal Resistance, Case to Fin R th(c-f) Per Module, Thermal Grease Applied, A grease = 1W/mK.18 C/W Comparative Tracking Index CTI 6 Clearance Distance in Air d a(t-t) 19 mm (Terminal to Terminal) Creepage Distance Along Surface d s(t-t) 54 mm (Terminal to Terminal) *1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *3 Pulse width and repetition rate should be such that device junction temperature rise is negligible. *4 T C measurement point is just under the chips. 8/18 Rev. 4 3
COLLECTOR CURRENT, I C, (AMPERES) COLLECTOR CURRENT, I C, (AMPERES) EMITTER CURRENT, I E, (AMPERES) COLLECTOR CURRENT, I C, (AMPERES) Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 15 T j = C OUTPUT CHARACTERISTICS (TYPICAL) V GE = 15V 13 15 TRANSFER CHARACTERISTICS (TYPICAL) V CE = V GE T j = 25 C T j = C 11 75 1 75 5 5 25 25 2 4 6 8 COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) 4 8 12 16 GATE-EMITTER VOLTAGE, V GE, (VOLTS) 15 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) V GE = 15V 15 T j = 25 C T j = C FREE-WHEEL DIODE FORWARD CHARACTERISTICS TYPICAL) T j = 25 C T j = C 75 75 5 5 25 25 2 4 6 8 COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS)) 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) 4 8/18 Rev. 4
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