ZXMP4A16G 40V P-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS = -40V: R DS(on) = DESCRIPTION FEATURES APPLICATIONS PINOUT

Similar documents
ZXMN2A14F 20V N-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS =20V : R DS ( on )=0.06 DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS = 100V : R DS(on) = 0.7 I D = 0.8A DESCRIPTION FEATURES SOT23 APPLICATIONS

ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS =30V : R DS ( on )=0.065

NOT RECOMMENDED FOR NEW DESIGN

ZXMN6A09G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 60V; R DS(ON) = I D = 5.1A DESCRIPTION FEATURES APPLICATIONS

ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 30V; R DS(ON) = I D = 4.6A DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS =100V : R DS(on) =0.7 DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION

ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = -60V; R DS(ON) = DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXMN3A04DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 30V; R DS(ON) = 0.02 ;I D = 8.5A DESCRIPTION FEATURES SO8 APPLICATIONS

ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS =-30V; R DS(ON) =0.15

ZXM62N03E6. Not Recommended for New Design Please Use ZXMN3A01E6TA 30V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMP3A17E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = -30V; R DS(ON) = 0.07 DESCRIPTION FEATURES APPLICATIONS PINOUT

COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE = 0.7 ; I D = 1.0 ; I D = -1.3A

ZXMHC3A01T8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE

ZXMN4A06G 40V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 40V; R DS(ON) = 0.05 DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION

ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET N/C N/C SOT23-5 PINOUT - TOP VIEW SUMMARY V (BR)DSS =-200V; R DS(ON) = 28

ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 30V; R DS(ON) = ;I D = 6.2A DESCRIPTION FEATURES APPLICATIONS

ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

ZVN4525Z 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY SOT89 S D

ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY SOT23-6

ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.20 ; ID=-2.3A SOT23-6

ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY SOT223 S D

ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.60 ; ID=-0.9A SOT23

ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.18 ; ID=1.7A SOT23

ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.13Ω; ID=2.4A MSOP8

ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET N/C SUMMARY V (BR)DSS = 450V; R DS(ON) = 50 ORDERING INFORMATION DEVICE MARKING ZXMN 0545

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET

ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = 30V : R SAT = 28m DESCRIPTION FEATURES APPLICATIONS PINOUT

40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE

ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS = -30V: R DS(on) = DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET

ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = -30V : R SAT = 31m

ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = -30V : R SAT = 31m

ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY. BV CEO = -30V : R SAT = 24m DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = 100V : R SAT = 36m DESCRIPTION FEATURES

ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89. SUMMARY BV CEO = 60V : R SAT = 30m DESCRIPTION FEATURES APPLICATIONS PINOUT

ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = 60V : R SAT = 35m DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXT849K 30V NPN LOW SATURATION TRANSISTOR IN D-PAK. SUMMARY BV CEO = 30V : R SAT = 33m. typical; I C = 7A DESCRIPTION FEATURES APPLICATIONS PINOUT

120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR

ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89. SUMMARY BV CEO = -140V : R SAT = 85m ; I C = -3A

ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6. SUMMARY BV CEO = -20V : R SAT = 31m ; I C = -3.5A

ZXTP2012A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE. SUMMARY BV CEO = -60V : R SAT = 38m DESCRIPTION FEATURES APPLICATIONS

FMMT620 SUMMARY V CEO =80V; R SAT. = 90m ;I C = 1.5A SOT23. SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR

ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE. SUMMARY BV CEO = 60V : R SAT = 34m ; I C = 4.5A DESCRIPTION FEATURES APPLICATIONS

ZXM64P02 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.090 ; ID= -3.5A MSOP8

ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE. SUMMARY BV CEO = 60V : R SAT = 34m ; I C = 4.5A DESCRIPTION FEATURES APPLICATIONS

ZXM64N02 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.040Ω; ID=5.4A MSOP8

ZXTAM322. MPPS Miniature Package Power Solutions 15V NPN LOW SATURATION TRANSISTOR. SUMMARY V CEO = 15V; R SAT = 45m ;I C = 4.5A

ZXT1M322. MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION SWITCHING TRANSISTOR. SUMMARY V CEO = -12V; R SAT = 60m ;I C = -4A DESCRIPTION

ZXTDC3M832. MPPS Miniature Package Power Solutions DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION

FSD270 SILICON DUAL VARIABLE CAPACITANCE DIODE. SUMMARY V BR =25V; I R =20nA; C d =33pF(Nom)

ZXT2M322. MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION SWITCHING TRANSISTOR. SUMMARY V CEO = 20V; R SAT = 64m

ZXT11N20DF SUMMARY V CEO =20V; R SAT = 2.5A. = 40m ;I C SOT23. SuperSOT4 20V NPN SILICON LOW SATURATION TRANSISTOR

ZXT12N50DX. SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V CEO =50V; R SAT = 3A MSOP8

ZXTDE4M832. MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION

ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO =

ZXRE4041 SOT23 MICROPOWER 1.225V VOLTAGE REFERENCE SUMMARY

COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS = -1.25A;

Applications. Devices are identified by type. Colour of marking: BYP53- black, BYP54 red

Applications. BYY53-75; ; BYY The package quantities for the different package

Applications. BYY57-75; ; BYY The package quantities for the different package

Applications. Device Quantity per box Options BYY57-75; ; BYY BYY58-75; ; BYY

SSF6602. Main Product Characteristics. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified)

ZAMP MHz MMIC WIDEBAND AMPLIFIER LNA, 15dB Gain, Very Low Current

SSF6014D 60V N-Channel MOSFET

SSF2341E. Main Product Characteristics V DSS -20V. R DS(on) 37mΩ (typ.) I D. Features and Benefit. Description

UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)

ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge

Obsolete Product(s) - Obsolete Product(s)

ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET

LNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.

ZXCT1008 AUTOMOTIVE HIGH-SIDE CURRENT MONITOR APPLICATIONS

WPM2005 Power MOSFET and Schottky Diode

ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge

MDS9652E Complementary N-P Channel Trench MOSFET

ZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge

ZXTP19060CZ 60V PNP medium transistor in SOT89

STS7PF30L P-CHANNEL 30V Ω - 7ASO-8 STripFET II POWER MOSFET

ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication

P-Channel Enhancement Mode Power MOSFET

Linear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C

-55 to 175 C T j ( ) Pulse width limited by safe operating area.

AO3401 P-Channel Enhancement Mode Field Effect Transistor

UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET

ZXFV4089 VIDEO AMPLIFIER WITH DC RESTORATION

Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2

UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET

ZDT1048 SM-8 Dual NPN medium power high gain transistors

STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET

SSF11NS65UF 650V N-Channel MOSFET

UNISONIC TECHNOLOGIES CO., LTD

SSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω

ZSR SERIES 2.85 TO 12 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR DEVICE DESCRIPTION FEATURES VOLTAGE RANGE to 12 Volt

SSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET

IRF7700GPbF. HEXFET Power MOSFET V DSS R DS(on) max I D

UNISONIC TECHNOLOGIES CO., LTD

Taiwan Goodark Technology Co.,Ltd TGD0103M

Taiwan Goodark Technology Co.,Ltd

STD20NF06L N-CHANNEL 60V Ω - 24A DPAK/IPAK STripFET II POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N7002K

Transcription:

40V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = -40V: R DS(on) = 0.060 : I D = -6.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT223 package APPLICATIONS DC-DC Converters Disconnect switches Audio output stages Motor Control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP4A16GTA 7 12mm 1000 units ZXMP4A16GTC 13 12mm 4000 units DEVICE MARKING ZXMP 4A16 Top View 1

ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -40 V Gate-Source Voltage V GS 20 V Continuous Drain Current (V GS = -10V; T A =25 C) (b) (V GS = -10V; T A =70 C) (b) (V GS = -10V; T A =25 C) (a) I D -6.4-5.1-4.6 Pulsed Drain Current (c) I DM -21 A Continuous Source Current (Body Diode) (b) I S -5.2 A Pulsed Source Current (Body Diode)(c) I SM -21 A Power Dissipation at T A =25 C (a) Linear Derating Factor Power Dissipation at T A =25 C (b) Linear Derating Factor P D 2.0 16 P D 3.9 31 A W mw/ C W mw/ C Operating and Storage Temperature Range T j :T stg -55 to +150 C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θja 62.5 C/W Junction to Ambient (b) R θja 32.2 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature. 2

CHARACTERISTICS 3

ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -40 V I D =-250µA, V GS =0V Zero Gate Voltage Drain Current I DSS -1 A V DS =-40V, V GS =0V Gate-Body Leakage I GSS 100 na V GS =20V, V DS =0V Gate-Source Threshold Voltage V GS(th) -1.0 V I =-250A, V D DS =V GS Static Drain-Source On-State R DS(on) 0.060 Resistance (1) 0.100 V GS =-10V, I D =-3.8A V GS =-4.5V, I D =-2.9A Forward Transconductance (1)(3) g fs 8.85 S V DS =-15V,I D =-3.8A DYNAMIC (3) Input Capacitance C iss 1007 pf Output Capacitance C oss 130 pf Reverse Transfer Capacitance C rss 85 pf SWITCHING (2)(3) V DS =-20V, V GS =0V, f=1mhz Turn-On Delay Time t d(on) 2.33 ns Rise Time t r 8.84 ns Turn-Off Delay Time t d(off) 29.18 ns V DD =-20V, I D =-1A R G @6.0, V GS =-10V Fall Time t f 12.54 ns Gate Charge Q g 13.6 nc V DS =-20V,V GS =-5V, I D =-3.8A Total Gate Charge Q g 26.1 nc Gate-Source Charge Q gs 2.8 nc Gate-Drain Charge Q gd 4.8 nc V DS =-20V,V GS =-10V, I D =-3.8A SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.85-1.2 V T J =25C, I S =-3.4A, V GS =0V Reverse Recovery Time (3) t rr 27.2 ns T J =25C, I F =-3A, di/dt= 100A/s Reverse Recovery Charge (3) Q rr 25.4 nc NOTES (1) Measured under pulsed conditions. Width 300µs. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. 4

TYPICAL CHARACTERISTICS 5

6

PACKAGE OUTLINE PAD LAYOUT DETAILS PACKAGE DIMENSIONS DIM Millimetres Inches Millimetres Inches DIM Min Max Min Max Min Max Min Max A - 1.80-0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90-0.0355 - D 6.30 6.70 0.248 0.264 Zetex plc 2003 Europe Americas Asia Pacific Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com 7