ZXTP19060CZ 60V PNP medium transistor in SOT89
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1 6V PNP medium transistor in SOT89 Summary BV CEO > -6V BV ECO > -7V (cont) = 4.5A V CE(sat) < -A R CE(sat) = 5m P D = 2.4 Complementary part number ZXTN96CZ Description Packaged in the SOT89 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features High gain Low saturation voltage High peak current 7V reverse blocking voltage B C E Applications High side driver Motor drive Load disconnect switch Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel TA 7 2 E C C B Pinout - top view Device marking M2 Issue - February 28
2 Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage V CBO -6 V Collector-Emitter voltage V CEO -6 V Emitter-Collector voltage (reverse blocking) V ECX -7 V Emitter-Base voltage V EBO -7 V Continuous Collector current (c) -4.5 A Base current I B - A Peak pulse current M -7 A Power dissipation at T A (a) P D. 8.8 m/ C Power dissipation at T A (b) P D m/ C Power dissipation at T A (c) P D m/ C Power dissipation at T A (d) P D m/ C Power dissipation at T C (e) P D m/ C Operating and storage temperature range T j, T stg -55 to 5 C Thermal resistance Parameter Symbol Limit Unit Junction to ambient (a) R JA 7 C/ Junction to ambient (b) R JA 68 C/ Junction to ambient (c) R JA 5 C/ Junction to ambient (d) R JA 28 C/ Junction to case (e) R JC 4.69 C/ NOTES: (a) For a device surface mounted on 5mm x 5mm x.6mm FR4 PCB with high coverage of single sided oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x.6mm FR4 PCB with high coverage of single sided oz copper, in still air conditions. (c) Mounted on 5mm x 5mm x.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t< seconds. (e) Junction to case (collector tab). Typical Issue - February
3 Thermal characteristics - V CE(sat) Limited DC s ms m ms ms µs see note (c) m m -V CE Collector-Emitter Voltage (V) Safe Operating Area Max Power Dissipation () see note (c) see note (b) see note (a) Temperature ( C) Derating Curve Issue - February
4 Thermal characteristics Thermal Resistance ( C/) see note (a) D=.5 4 D=.2 2 D=.5 D=. µ m m m k Pulse idth (s) Transient Thermal Impedance Maximum Power () see note (a) µ m m m k Pulse idth (s) Pulse Power Dissipation Thermal Resistance ( C/) Thermal Resistance ( C/) D=.2 D=.5 D=. µ m m m k see note (b) D=.5 Pulse idth (s) Transient Thermal Impedance see note (c) D=.5 D=.2 D=.5 D=. µ m m m k Pulse idth (s) Transient Thermal Impedance Maximum Power () Maximum Power () µ m m m k see note (b) Pulse idth (s) Pulse Power Dissipation see note (c) µ m m m k Pulse idth (s) Pulse Power Dissipation Issue - February
5 Electrical characteristics (at = 25 C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-Base breakdown BV CBO -6 - V = -µa voltage Collector-Emitter BV CEO -6-9 V = -ma (*) breakdown voltage Emitter-Collector breakdown voltage (reverse blocking) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector-Base cut-off current BV ECX V I E = -µa, R BC < kω or.25v > V BC > -.25V BV ECO V I E = -µa BV EBO V I E = -µa BO < NOTES: (*) Measured under pulsed conditions. Pulse width 3µs; duty cycle 2%. na µa V CB = -6V V CB = -6V, = C Emitter cut-off current I EBO < -5 na V EB = -5.6V Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio V CE(sat) = -A, I B = -ma (*) = -A, I B = -2mA (*) = -2A, I B = -4mA (*) = -2A, I B = -2mA (*) = -3A, I B = -3mA (*) = -4.5A, I B = -45mA (*) V BE(sat) = -4.5A, I B = -45mA (*) V BE(on) = -4.5A, V CE = -2V (*) h FE = -ma, V CE = -2V (*) = -A, V CE = -2V (*) = -4.5A, V CE = -2V (*) Transition frequency f T 8 MHz = -5mA, V CE = -V f = 5MHz Input capacitance C ibo 28 4 pf V EB = -.5V, f = MHz(*) Output capacitance C obo pf V CB = -V, f = MHz(*) Delay time t d 24.3 ns Rise time t r 3.2 ns Storage time t s 456 ns Fall time t f 68.2 ns = -5mA, V CC = -V, I B = -I B2 = -5mA Issue - February
6 Typical characteristics - V CE(SAT) (V) Normalised Gain m Tamb =5 = m = m m m - V CE(SAT) v V.6 CE =2V 6 5 C C C C.2. m m m - h FE v =2 Typical Gain (hfe) - V CE(SAT) (V) - V BE(SAT) (V) C. m m = = 5 C C - V CE(SAT) v -55 C 25 C C.2 m m m V BE(SAT) v 5 C - 25 C - V BE(ON) (V)..8.6 V CE =2V -55 C 25 C.4 5 C C.2 m m m - V BE(ON) v Capacitance (pf) 4 35 Cibo f = MHz Cobo 5 m m - Voltage(V) Capacitance v Voltage Issue - February
7 Package outline - SOT89 D A D C H E E L B e B e DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A E B E B e.5 BSC.59 BSC C e 3. BSC.8 BSC D H D L Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue - February
8 Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user s application and meets with the user s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9 and TS6949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with EEE and ELV directives. Product status key: Preview Future device intended for production at some point. Samples may be available Active Product status recommended for new designs Last time buy (LTB) Device will be discontinued and last time buy period and delivery is in effect Not recommended for new designs Device is still in production to support existing designs and production Obsolete Production has been discontinued Datasheet status key: Draft version This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. Provisional version This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. Issue This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Zetex sales offices Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-park Balanstraße 59 D-854 München Germany Telefon: (49) Fax: (49) europe.sales@zetex.com Zetex Inc 7 Veterans Memorial Highway Hauppauge, NY 788 USA Telephone: () Fax: () usa.sales@zetex.com Zetex (Asia Ltd) 37-4 Metroplaza Tower Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26 6 Fax: (852) asia.sales@zetex.com Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) Fax: (44) hq@zetex.com 28 Published by Zetex Semiconductors plc Issue - February
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