N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE30C uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES V DS = 0V,I D = A R DS(ON) < 80mΩ @ V GS =4.5V R DS(ON) < 90mΩ @ V GS =.5V High Power and current handing capability Lead free product is acquired Surface Mount Package D G S Schematic diagram 30C Application Battery protection Load switch Power management Marking and pin Assignment SOT-3 top view Absolute Maximum Ratings (TA=5 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous I D A Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range T J,T STG -55 To 150 VDS VGS I DM P D 0 V ±1 V 8 A 1 W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note ) R θja 15 /W Electrical Characteristics (TA=5 unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =50μA 0 - - V Zero Gate Voltage Drain Current I DSS V DS =0V,V GS =0V - - 1 μa Page 1
Gate-Body Leakage Current I GSS V GS =±1V,V DS =0V - - ±100 na On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS =V GS,I D =50μA 0.5 0. 1.0 V Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D = A - 60 80 mω V GS =.5V, I D = 1A - 0 90 mω Forward Transconductance g FS V DS =5V,I D =.9A - 8 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 60 - PF V DS =10V,V GS =0V, Output Capacitance C oss - 105 - PF F=1.0MHz Reverse Transfer Capacitance - 60 - PF C rss Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 15 ns Turn-on Rise Time t r V DD =10V,I D =.9A - 50 85 ns Turn-Off Delay Time t d(off) V GS =4.5V,R GEN =6Ω - 1 45 ns Turn-Off Fall Time t f - 10 0 ns Total Gate Charge Q g V DS =10V,I D =.9A, - 3.0 10 nc Gate-Source Charge Q gs V GS =4.5V - 0.55 - nc Gate-Drain Charge - 0.9 - nc Q gd PE30C Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =.9A - 0.5 1. V Diode Forward Current (Note ) I S - -.9 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300μs, Duty Cycle %. 4. Guaranteed by design, not subject to production Page
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd t on t off Vgs Rgen Vin G D Rl Vout t d(on) V OUT t r 10% t d(off) 90% INVERTED t f 90% 10% S V IN 90% 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit Figure :Switching Waveforms T J -Junction Temperature( ) Figure 3 Power Dissipation T J -Junction Temperature( ) Figure 4 Drain Current Rdson On-Resistance(mΩ) PD Power(W) Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS I D - Drain Current (A) Figure 6 Drain-Source On-Resistance Page 3
Vgs Gate-Source Voltage (V) Figure Transfer Characteristics T J -Junction Temperature( ) Figure 8 Drain-Source On-Resistance Vgs Gate-Source Voltage (V) Figure 9 Rdson vs Vgs Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) C Capacitance (pf) Normalized On-Resistance Qg Gate Charge (nc) Figure 11 Gate Charge Vsd Source-Drain Voltage (V) Figure 1 Source- Drain Diode Forward Page 4
100 5 3 10 5 3 1.0 5 3 IDM =8A ID =A Operation in this area is limited by RDS(on). 100ms DC operation Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area r(t),normalized Effective Transient Thermal Impedance 10ms PW 10μs 1ms 100μs 0.1 5 Ta=5 C 3 Single pulse When mounted on ceramic substrate 0.01 (900mm 0.8mm) 1unit 0.01 3 5 0.1 3 5 1.0 3 5 10 3 5 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance Page 5
SOT-3 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D.800 3.000 E 1.00 1.400 E1.50.550 e 0.950TYP e1 1.800.000 L 0.550REF L1 0.300 0.500 θ 0 8 NOTES 1. All dimensions are in millimeters.. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Page 6