NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS

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MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0 Adc Total Power Dissipation @ TA = 25 C Derate above 25 C Total Power Dissipation @ TC = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS PD 625 5.0 PD 1.5 12 Unit mw mw/ C Watt mw/ C TJ, Tstg 55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Voltage and current are negative for transistors *ON Semiconductor Preferred Devices 1 2 3 CASE 29 10, STYLE 1 TO 92 (TO 226AL) ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage(1) (IC = 10 madc, IB = 0) Collector Base Breakdown Voltage (IC = 100 µadc, IE = 0 ) Emitter Base Breakdown Voltage (IC = 0, IE = 10 µadc) MPS650, MPS750 MPS651, MPS751 MPS650, MPS750 MPS651, MPS751 V(BR)CEO V(BR)CBO 40 60 60 80 Vdc Vdc V(BR)EBO 5.0 Vdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) MPS650, MPS750 MPS651, MPS751 ICBO 0.1 0.1 µadc IEBO 0.1 µadc 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 Rev. 1 1 Publication Order Number: MPS650/D

ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 50 ma, VCE = 2.0 V) (IC = 500 ma, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector Emitter Saturation Voltage (IC = 2.0 A, IB = 200 ma) (IC = 1.0 A, IB = 100 ma) hfe VCE(sat) Base Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V) VBE(on) 1.0 Vdc Base Emitter Saturation Voltage (IC = 1.0 A, IB = 100 ma) VBE(sat) 1.2 Vdc SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product(2) (IC = 50 madc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. 2. ft is defined as the frequency at which hfe extrapolates to unity. 75 75 75 40 0.5 0.3 Vdc ft 75 MHz Figure 1. 2

Figure 1. MPS650, MPS651 Typical DC Current Gain Figure 2. MPS750, MPS751 Typical DC Current Gain Figure 3. MPS650, MPS651 On Voltages Figure 4. MPS750, MPS751 On Voltages 3

Figure 5. MPS650, MPS651 Collector Saturation Region Figure 6. MPS750, MPS751 Collector Saturation Region Figure 7. MPS650, MPS651 SOA, Safe Operating Area µ µ Figure 8. MPS750, MPS751 SOA, Safe Operating Area 4

PACKAGE DIMENSIONS TO 92 (TO 226) CASE 29 10 ISSUE AL R F A X X H R N G P N L C B K D J SECTION X X 5

Notes 6

Notes 7

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