Dual (Half-Bridge) Collecor curren I C...... 4A * Collecor-emier volage CES... 2 Maximum juncion emperaure T jmax... 75 C Fla base Type Copper base plae RoHS Direcive compliance UL Recognized under UL557, File E323585 *. DC curren raing is limied by power erminals. APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm Tolerance oherwise specified Division of Dimension Tolerance.5 o 3 ±.2 over 3 o 6 ±.3 over 6 o 3 ±.5 over 3 o 2 ±.8 over 2 o 4 ±.2 Tr2 INTERNAL CONNECTION Di Tr Di2 G E () ()
ABSOLUTE MAXIMUM RATINGS (T j =25 C, unless oherwise specified) Symbol Iem Condiions Raing Uni CES Collecor-emier volage G-E shor-circuied 2 GES Gae-emier volage C-E shor-circuied ± 2 I C DC, T C =25 C Collecor curren Pulse, Repeiive I CRM P o Toal power dissipaion T C =25 C I E (Noe) I ERM (Noe) Emier curren (Noe2) Pulse, Repeiive (Noe2, 4) (Noe3) (Noe2, 4) (Noe3) 4 * 9 A 333 W 4 * 9 A isol Isolaion volage Terminals o base plae, RMS, f=6 Hz, AC min 25 T jmax Maximum juncion emperaure Insananeous even (overload) 75 T cmax Maximum case emperaure (Noe4) T jop Operaing juncion emperaure Coninuous operaion (under swiching) -4 ~ +5 T sg Sorage emperaure - -4 ~ +25 ELECTRICAL CHARACTERISTICS (T j =25 C, unless oherwise specified) Symbol Iem Condiions Limis Min. Typ. Max. I CES Collecor-emier cu-off curren CE = CES, G-E shor-circuied - -. ma I GES Gae-emier leakage curren GE = GES, C-E shor-circuied - -.5 μa GE(h) Gae-emier hreshold volage I C =45 ma, CE = 5.4 6. 6.6 I C =45 A (Noe5), T j =25 C -.8 2.25 CEsa GE =5, Terminal, T j =25 C - 2.5 - Collecor-emier sauraion volage Refer o figure of es circui T j =5 C - 2. - I C =45 A, T j =25 C -.7 2.5 GE =5, T j =25 C -.9 - Chip T j =5 C -.95 - C ies Inpu capaciance - - 45 C oes Oupu capaciance CE =, G-E shor-circuied - - 9. nf C res Reverse ransfer capaciance - -.75 Q G Gae charge CC =6, I C =45 A, GE =5-5 - nc d(on) Turn-on delay ime - - 8 CC =6, I C =45 A, GE =±5, Rise ime - - 2 r d(off) Turn-off delay ime - - 6 R G = Ω, Inducive load Fall ime - - 3 f (Noe) EC (Noe) rr I E =45 A (Noe5), T j =25 C -.85 2.3 G-E shor-circuied, Terminal, T j =25 C -.85 - Emier-collecor volage Refer o figure of es circui T j =5 C -.85 - I E =45 A, T j =25 C -.7 2.5 G-E shor-circuied, T j =25 C -.7 - Chip T j =5 C -.7 - Reverse recovery ime CC =6, I E =45 A, GE =±5, - - 3 ns Q (Noe) rr Reverse recovery charge R G = Ω, Inducive load - 24 - μc E on Turn-on swiching energy per pulse CC =6, I C =I E =45 A, - 54.9 - E off Turn-off swiching energy per pulse GE =±5, R G = Ω, - 48 - mj E (Noe) rr Reverse recovery energy per pulse T j =5 C, Inducive load - 32.4 - mj R CC'+EE' Inernal lead resisance Main erminals -chip, per swich, T C =25 C - -.7 mω r g Inernal gae resisance Per swich - 4.3 - Ω 25 C C Uni ns 2
THERMAL RESISTANCE CHARACTERISTICS Symbol Iem Condiions Limis Min. Typ. Max. R h(j-c)q (Noe4) Juncion o case, per IGBT - - 45 K/kW Thermal resisance Juncion o case, per FWDi - - 68 K/kW R h(j-c)d R h(c-s) Conac hermal resisance MECHANICAL CHARACTERISTICS (Noe4) Symbol Iem Condiions Case o hea sink, per /2 module, - 8 - K/kW (Noe6) Thermal grease applied Limis Min. Typ. Max. M Main erminals M 6 screw 3.5 4. 4.5 N m Mouning orque Mouning o hea sink M 6 screw 3.5 4. 4.5 N m M s m Weigh - - 58 - g e c Flaness of base plae On he cenerline X, Y (Noe7) Uni Uni - - + μm Noe. Represen raings and characerisics of he ani-parallel, emier-collecor free wheeling diode (FWDi). 2. Juncion emperaure (T j ) should no increase beyond T jmax raing. 3. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T j ) dose no exceed T jmax raing. 4. Case emperaure (T C ) and hea sink emperaure (T S ) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o figure of chip locaion. The hea sink hermal resisance should measure jus under he chips. 5. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. 6. Typical value is measured by using hermally conducive grease of λ=.9 W/(m K). 7. Base plae (mouning side) flaness measuremen poins (X, Y) are as follows of he following figure. +:Convex -:Concave X 3 mm mouning side Y mouning side -:Concave mouning side +:Convex *. DC curren raing is limied by power erminals. RECOMMENDED OPERATING CONDITIONS Symbol Iem Condiions Limis Min. Typ. Max. Uni CC (DC) Supply volage Applied across - - 6 85 GEon Gae (-emier drive) volage Applied across G-/- 3.5 5. 6.5 R G Exernal gae resisance Per swich - 8 Ω 3
CHIP LOCATION (Top view) Dimension in mm, olerance: ± mm TEST CIRCUIT Tr/Tr2: IGBT, Di/Di2: FWDi GE=5 G I C Shorcircuied G Shorcircuied G I E Shorcircuied G Shorcircuied GE=5 I C Shorcircuied Shorcircuied I E Tr Tr2 Di Di2 CEsa es circui EC es circui 4
TEST CIRCUIT AND WAEFORMS i E v GE ~ 9 % - GE G Load + CC i C ~ 9 % i E A I E Q rr =.5 I rr rr rr + GE - GE R G v GE v CE i C A d(on) r d(off) f % I rr.5 I rr Swiching characerisics es circui and waveforms rr, Q rr es waveform I CM i C i C I CM i E I EM v EC CC v CE CC CC v CE A. I CM. CC. CC.2 I CM i i i IGBT Turn-on swiching energy IGBT Turn-off swiching energy FWDi Reverse recovery energy Turn-on / Turn-off swiching energy and Reverse recovery energy es waveforms (Inegral ime insrucion drawing) 5
PERFORMANCE CURES OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS T j =25 C (Chip) GE =5 (Chip) 9 3.5 GE =2 3.5 8 5 2 3. T j =25 C COLLECTOR CURRENT IC (A) 7 6 5 4 3 2 9 COLLECTOR-EMITTER SATURATION OLTAGE CEsa () 2.5 2..5. T j =5 C T j =25 C.5 2 4 6 8 COLLECTOR-EMITTER OLTAGE CE (). 2 3 4 5 6 7 8 9 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS FREE WHEELING DIODE FORWARD CHARACTERISTICS T j =25 C (Chip) G-E shor-circuied (Chip) COLLECTOR-EMITTER SATURATION OLTAGE CEsa () 8 6 4 2 I C =9 A I C =45 A I C =8 A EMITTER CURRENT IE (A) T j =5 C T j =25 C T j =25 C 6 8 2 4 6 8 2 GATE-EMITTER OLTAGE GE ()..5..5 2. 2.5 3. EMITTER-COLLECTOR OLTAGE EC () 6
PERFORMANCE CURES HALF-BRIDGE SWITCHING CHARACTERISTICS CC =6, GE =±5, R G = Ω, INDUCTIE LOAD ---------------: T j =5 C, - - - - -: T j =25 C HALF-BRIDGE SWITCHING CHARACTERISTICS CC =6, I C =45 A, GE =±5, INDUCTIE LOAD ---------------: T j =5 C, - - - - -: T j =25 C d(off) d(on) f SWITCHING TIME (ns) d(on) r SWITCHING TIME d(on), r (ns) r d(off) SWITCHING TIME d(off), f (ns) f COLLECTOR CURRENT I C (A). EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS CC =6, GE =±5, R G = Ω, INDUCTIE LOAD, PER PULSE ---------------: T j =5 C, - - - - -: T j =25 C HALF-BRIDGE SWITCHING CHARACTERISTICS CC =6, I C /I E =45 A, GE =±5, INDUCTIE LOAD, PER PULSE ---------------: T j =5 C, - - - - -: T j =25 C SWITCHING ENERGY Eon (mj) REERSE RECOERY ENERGY (mj) E rr E on E off SWITCHING ENERGY Eoff (mj) SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) E on E off E rr COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A). EXTERNAL GATE RESISTANCE R G (Ω) 7
PERFORMANCE CURES CAPACITANCE CHARACTERISTICS G-E shor-circuied, T j =25 C FREE WHEELING DIODE REERSE RECOERY CHARACTERISTICS CC =6, GE =±5, R G = Ω, INDUCTIE LOAD ---------------: T j =5 C, - - - - -: T j =25 C C ies I rr CAPACITANCE (nf) C oes I rr (A) rr (ns) rr C res.. COLLECTOR-EMITTER OLTAGE CE () EMITTER CURRENT I E (A) GATE CHARGE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) CC =6, I C =45 A, T j =25 C Single pulse, T C =25 C R h(j-c)q =45 K/kW, R h(j-c)d =68 K/kW GATE-EMITTER OLTAGE GE () 2 5 5 5 5 GATE CHARGE Q G (nc) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z h(j-c)........ TIME (S) 8
Keep safey firs in your circui designs! Misubishi Elecric Corporaion pus he maximum effor ino making semiconducor producs beer and more reliable, bu here is always he possibiliy ha rouble may occur wih hem. Trouble wih semiconducors may lead o personal injury, fire or propery damage. Remember o give due consideraion o safey when making your circui designs, wih appropriae measures such as (i) placemen of subsiuive, auxiliary circuis, (ii) use of non-flammable maerial or (iii) prevenion agains any malfuncion or mishap. Noes regarding hese maerials These maerials are inended as a reference o assis our cusomers in he selecion of he Misubishi semiconducor produc bes suied o he cusomer's applicaion; hey do no convey any license under any inellecual propery righs, or any oher righs, belonging o Misubishi Elecric Corporaion or a hird pary. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, or infringemen of any hird-pary's righs, originaing in he use of any produc daa, diagrams, chars, programs, algorihms, or circui applicaion examples conained in hese maerials. All informaion conained in hese maerials, including produc daa, diagrams, chars, programs and algorihms represens informaion on producs a he ime of publicaion of hese maerials, and are subjec o change by Misubishi Elecric Corporaion wihou noice due o produc improvemens or oher reasons. I is herefore recommended ha cusomers conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for he laes produc informaion before purchasing a produc lised herein. The informaion described here may conain echnical inaccuracies or ypographical errors. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy, or oher loss rising from hese inaccuracies or errors. Please also pay aenion o informaion published by Misubishi Elecric Corporaion by various means, including he Misubishi Semiconducor home page (www.misubishielecric.com/semiconducors/). When using any or all of he informaion conained in hese maerials, including produc daa, diagrams, chars, programs, and algorihms, please be sure o evaluae all informaion as a oal sysem before making a final decision on he applicabiliy of he informaion and producs. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy or oher loss resuling from he informaion conainedherein. Misubishi Elecric Corporaion semiconducors are no designed or manufacured for use in a device or sysem ha is used under circumsances in which human life is poenially a sake. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor when considering he use of a produc conained herein for any specific purposes, such as apparaus or sysems for ransporaion, vehicular, medical, aerospace, nuclear, or undersea repeaer use. The prior wrien approval of Misubishi Elecric Corporaion is necessary o reprin or reproduce in whole or in par hese maerials. If hese producs or echnologies are subjec o he Japanese expor conrol resricions, hey mus be expored under a license from he Japanese governmen and canno be impored ino a counry oher han he approved desinaion. Any diversion or reexpor conrary o he expor conrol laws and regulaions of Japan and/or he counry of desinaion is prohibied. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for furher deails on hese maerials or he producs conained herein. 23 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERED. 9