DX DXP dual swich (half-bridge) Collecor curren IC...... Collecor-emier volage VCES... 6 0 0 A 6 5 0 V Maximum juncion emperaure T vjmax... 1 7 5 C Fla base ype Copper base plae (Nickel-plaing) RoHS Direcive complian Tin-plaing pin erminals Collecor curren IC...... Collecor-emier volage VCES... 6 0 0 A 6 5 0 V Maximum juncion emperaure T vjmax... 1 7 5 C Fla base ype Copper base plae (Nickel-plaing) RoHS Direcive complian Tin-plaing pressfi erminals UL Recognized under UL1557, File No. E323585 APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OPTION (Below opions are available.) PC-TIM (Phase Change Thermal Inerface Maerial) pre-apply VCEsa selecion for parallel connecion INTERNAL CONNECTION 10 11 9 Di2 Th 8 NTC Tr2 Tr1 Di1 1 2 3 4 5 7 6 TERMINAL CODE 1. TH1 6. C2E1 2. TH2 7. C2E1 3. G1 8. G2 4. Es1 9. Es2 5. Cs1 10. E2 11. C1 OUTLINE DRAWING Dimension in mm COM. MOUNTING HOLES SECTION A Publicaion Dae : Sepember 2017 1
OUTLINE DRAWING DX Dimension in mm TERMINAL Tolerance oherwise specified Division of Dimension Tolerance 0.5 o 3 ±0.2 over 3 o 6 ±0.3 over 6 o 30 ±0.5 over 30 o 120 ±0.8 over 120 o 400 ±1.2 Publicaion Dae : Sepember 2017 2
OUTLINE DRAWING DXP Dimension in mm TERMINAL PCB DRILL HOLE PATTERN Tolerance oherwise specified Division of Dimension Tolerance 0.5 o 3 ±0.2 over 3 o 6 ±0.3 over 6 o 30 ±0.5 over 30 o 120 ±0.8 over 120 o 400 ±1.2 Publicaion Dae : Sepember 2017 3
MAXIMUM RATINGS (Tvj=25 C, unless oherwise specified) INVERTER PART IGBT/FWD Symbol Iem Condiions Raing Uni V CES Collecor-emier volage G-E shor-circuied 650 V V GES Gae-emier volage C-E shor-circuied ± 20 V I C DC, TC=101 C (Noe2, 4) 600 Collecor curren I CRM Pulse, Repeiive (Noe3) 1200 P o Toal power dissipaion TC=25 C (Noe2, 4) 2080 W (Noe1) IE DC (Noe2) 600 Emier curren IERM (Noe1) Pulse, Repeiive (Noe3) 1200 MODULE Symbol Iem Condiions Raing Uni V isol Isolaion volage Terminals o base plae, RMS, f=60 Hz, AC 1 min 2500 V T vjmax Maximum juncion emperaure Insananeous even (overload) 175 T Cmax Maximum case emperaure (Noe4) 125 T vjop Operaing juncion emperaure Coninuous operaion (under swiching) -40 ~ +150 T sg Sorage emperaure - -40 ~ +125 ELECTRICAL CHARACTERISTICS (Tvj=25 C, unless oherwise specified) INVERTER PART IGBT/FWD Symbol Iem Condiions Limis Min. Typ. Max. I CES Collecor-emier cu-off curren VCE=VCES, G-E shor-circuied - - 1.0 ma I GES Gae-emier leakage curren VGE=VGES, C-E shor-circuied - - 0.5 μa V GE(h) Gae-emier hreshold volage IC=60 ma, VCE=10 V 5.4 6.0 6.6 V V CEsa (Terminal) V CEsa (Chip) Collecor-emier sauraion volage IC=600 A, VGE=15 V, T vj=25 C - 1.45 1.80 Refer o he figure of es circui T vj=125 C - 1.55 - V (Noe5) T vj=150 C - 1.60 - IC=600 A, T vj=25 C - 1.30 1.55 VGE=15 V, T vj=125 C - 1.35 - V (Noe5) T vj=150 C - 1.35 - C ies Inpu capaciance - - 80.2 C oes Oupu capaciance V CE=10 V, G-E shor-circuied - - 3.4 nf C res Reverse ransfer capaciance - - 1.5 Q G Gae charge VCC=300 V, IC=600 A, VGE=15 V - 2.48 - μc d(on) Turn-on delay ime - - 400 VCC=300 V, IC=600 A, VGE=±15 V, r Rise ime - - 200 d(off) Turn-off delay ime - - 400 RG=1.0 Ω, Inducive load f Fall ime - - 400 V EC (Noe1) (Terminal) V EC (Noe1) (Chip) Emier-collecor volage IE=600 A, G-E shor-circuied, T vj=25 C - 1.60 2.15 Refer o he figure of es circui T vj=125 C - 1.65 - V (Noe5) T vj=150 C - 1.65 - IE=600 A, T vj=25 C - 1.45 1.85 G-E shor-circuied, T vj=125 C - 1.50 - V (Noe5) T vj=150 C - 1.50 - rr (Noe1) Reverse recovery ime VCC=300 V, IE=600 A, VGE=±15 V, - - 500 ns Q rr (Noe1) Reverse recovery charge R G=1.0 Ω, Inducive load - 42 - μc E on Turn-on swiching energy per pulse V CC=300 V, I C=I E=600 A, - 8.3 - E off Turn-off swiching energy per pulse V GE=±15 V, R G=1.0 Ω, T vj=150 C, - 33.2 - E rr (Noe1) Reverse recovery energy per pulse Inducive load - 23.9 - mj R CC'+EE' Inernal lead resisance Main erminals-chip, per swich, TC=25 C (Noe4) - 0.71 - mω r g Inernal gae resisance Per swich - 1.0 - Ω A A C C Uni ns mj Publicaion Dae : Sepember 2017 4
ELECTRICAL CHARACTERISTICS (con.; Tvj=25 C, unless oherwise specified) NTC THERMISTOR PART Symbol Iem Condiions Limis Min. Typ. Max. R 25 Zero-power resisance TC=25 C (Noe4) 4.85 5.00 5.15 kω ΔR/R Deviaion of resisance R100=493 Ω, TC=100 C (Noe4) -7.3 - +7.8 % B (25/50) B-consan Approximae by equaion (Noe6) - 3375 - K P 25 Power dissipaion TC=25 C (Noe4) - - 10 mw Uni THERMAL RESISTANCE CHARACTERISTICS Limis Symbol Iem Condiions Min. Typ. Max. R h(j-c)q Juncion o case, per Inverer IGBT (Noe4) - - 72 Thermal resisance R h(j-c)d Juncion o case, per Inverer FWD (Noe4) - - 111 R h(c- s ) Case o hea sink, Thermal grease applied (Noe4, 7) - 11.5 - Conac hermal resisance per 1 module, PC-TIM applied (Noe4, 8) - 3.1 - Uni K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Iem Condiions Limis Min. Typ. Max. Uni M Mouning orque Main erminals M 6 screw 3.5 4.0 4.5 N m M s Mouning orque Mouning o hea sink M 5 screw 2.5 3.0 3.5 N m d s d a Creepage disance Solder pin ype (DX) Terminal o erminal 17 - - Terminal o base plae 16.4 - - mm Pressfi pin ype (DXP) Terminal o erminal 17 - - Terminal o base plae 16.8 - - mm Clearance Solder pin ype (DX) Terminal o erminal 10 - - Terminal o base plae 16.2 - - mm Pressfi pin ype (DXP) Terminal o erminal 10 - - Terminal o base plae 16.2 - - mm (Noe9) e c Flaness of base plae On he cenerline X, Y ±0 - +200 μm m mass - - 300 - g *: This produc is complian wih he Resricion of he Use of Cerain Hazardous Subsances in Elecrical and Elecronic Equipmen (RoHS) direcive 2011/65/EU. Noe1. Represen raings and characerisics of he ani-parallel, emier-collecor free-wheeling diode (FWD). 2. Juncion emperaure (T vj) should no increase beyond T vjmax raing. 3. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T vj) dose no exceed T vjmax raing. 4. Case emperaure (TC) and hea sink emperaure (T S ) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o he figure of chip locaion. 5. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. Refer o he figure of es circui. R 6. B ln( 25 1 1 ( 25 / 50) = )/( ) R50 T25 T50 R25: resisance a absolue emperaure T25 [K]; T25=25 [ C]+273.15=298.15 [K] R50: resisance a absolue emperaure T50 [K]; T50=50 [ C]+273.15=323.15 [K] 7. Typical value is measured by using hermally conducive grease of λ=0.9 W/(m K)/D(C-S)=50 μm. 8. Typical value is measured by using PC-TIM of λ=3.4 W/(m K)/D(C-S)=50 μm. 9. The base plae (mouning side) flaness measuremen poins (X, Y) are shown in he following figure. -:Concave Mouning side +:Convex -:Concave +:Convex Y 2 mm X Mouning side Mouning side 2 mm Publicaion Dae : Sepember 2017 5
Noe10. Use he following screws when mouning he prined circui board (PCB) on he sandoffs. PCB hickness : =1.6. Type Manufacurer Size Tighening orque (N m) (1) PT EJOT K25 8 0.55 ± 0.055 Recommended ighening mehod (2) PT K25 10 0.75 ± 0.075 N m by handwork (equivalen o 30 rpm (3) DELTA PT 25 8 0.55 ± 0.055 N m by mechanical screw driver) (4) DELTA PT 25 10 0.75 ± 0.075 N m ~ 600 rpm (by mechanical screw driver) (5) B1 - φ2.6 10 apping screw φ2.6 12 RECOMMENDED OPERATING CONDITIONS 0.75 ± 0.075 N m Symbol Iem Condiions Limis Min. Typ. Max. V CC (DC) Supply volage Applied across C1-E2 erminals - 300 450 V V GEon Gae (-emier drive) volage Applied across G1-E1s/G2-E2s erminals 13.5 15.0 16.5 V RG Exernal gae resisance Per swich 1.0-10 Ω Uni Publicaion Dae : Sepember 2017 6
CHIP LOCATION (Top view) DX Dimension in mm, olerance: ±1 mm DXP Opion: PC-TIM applied baseplae ouline Tr1/Tr2: IGBT, Di1/Di2: FWD, Th: NTC hermisor Publicaion Dae : Sepember 2017 7
TEST CIRCUIT AND WAVEFORMS -V GE 5 3 4 11 6/7 i E Load + V CC 0 V v GE i C ~ ~ 90 % 0 90 % i E 0 A I E Q rr =0.5 I rr rr rr 0 +V GE -V GE R G vge 8 9 10 vce i C 0 A d(on) Swiching characerisics es circui and waveforms r d(off) f 10% I rr 0.5 I rr rr, Qrr characerisics es waveform IEM vce ICM VCC ic ic VCC ICM vce ie vec VCC 0 A 0 0.1 ICM 0.1 VCC 0 0.1 VCC 0.02 ICM 0 V i i i IGBT Turn-on swiching energy IGBT Turn-off swiching energy FWD Reverse recovery energy Swiching energy and Reverse recovery energy es waveforms (Inegral ime insrucion drawing) TEST CIRCUIT VGE=15 V V G-E shorcircuied 5 3 4 8 11 6/7 IC G-E shorcircuied VGE=15 V 5 3 4 8 11 6/7 V IC G-E shorcircuied V G-E shorcircuied 5 3 4 8 11 6/7 IE G-E shorcircuied G-E shorcircuied 5 3 4 8 11 6/7 V IE 9 10 9 10 9 10 9 10 Tr1 Tr2 Di1 Di2 VCEsa characerisics es circui VEC characerisics es circui Publicaion Dae : Sepember 2017 8
PERFORMANCE CURVES INVERTER PART OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS T vj=25 C (chip) V GE=15 V (chip) COLLECTOR CURRENT IC (A) VGE=20 V 15 V 13.5 V 12 V 11 V 10 V 9 V 8 V COLLECTOR-EMITTER SATURATION VOLTAGE VCEsa (V) T vj=125 C T vj=150 C T vj=25 C COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE CHARACTERISTICS FREE WHEELING DIODE FORWARD CHARACTERISTICS T vj=25 C (chip) G-E shor-circuied (chip) T vj=125 C COLLECTOR-EMITTER VOLTAGE VCE (V) I C=1200 A I C=600 A I C=300 A EMITTER CURRENT IE (A) T vj=150 C T vj=25 C GATE-EMITTER VOLTAGE V GE (V) EMITTER-COLLECTOR VOLTAGE V EC (V) Publicaion Dae : Sepember 2017 9
PERFORMANCE CURVES INVERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS HALF-BRIDGE SWITCHING CHARACTERISTICS V CC=300 V, R G=1.0 Ω, V GE=±15 V, INDUCTIVE LOAD V CC=300 V, I C=600 A, V GE=±15 V, INDUCTIVE LOAD -----------------: T vj=150 C, - - - - -: T vj=125 C -----------------: T vj=150 C, - - - - -: T vj=125 C d(off) d(on) SWITCHING TIME (ns) r f SWITCHING TIME (ns) d(off) d(on ) f r COLLECTOR CURRENT I C (A) EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS HALF-BRIDGE SWITCHING CHARACTERISTICS V CC=300 V, R G=1.0 Ω, V GE=±15 V, INDUCTIVE LOAD, V CC=300 V, I C/I E=600 A, V GE=±15 V, INDUCTIVE LOAD, -----------------: T vj=150 C, - - - - -: T vj=125 C, PER PULSE -----------------: T vj=150 C, - - - - -: T vj=125 C, PER PULSE E off SWITCHING ENERGY (mj) REVERSE RECOVERY ENERGY (mj) E rr E on SWITCHING ENERGY (mj) REVERSE RECOVERY ENERGY (mj) E off E rr E on COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A) EXTERNAL GATE RESISTANCE R G (Ω) Publicaion Dae : Sepember 2017 10
PERFORMANCE CURVES INVERTER PART CAPACITANCE CHARACTERISTICS FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS V CC=300 V, R G=1.0 Ω, V GE=±15 V, INDUCTIVE LOAD G-E shor-circuied, T vj=25 C ---------------: T j=150 C, - - - - -: T j=125 C I rr C ies CAPACITANCE (nf) C oes rr (ns), I rr (A) rr C res COLLECTOR-EMITTER VOLTAGE V CE (V) EMITTER CURRENT I E (A) GATE CHARGE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 20 V CC=300 V, I C=600 A, T vj=25 C Single pulse, T C=25 C R h(j-c)q=72 K/kW, R h(j-c)d=111 K/kW GATE-EMITTER VOLTAGE VGE (V) 15 10 5 0-5 -10-15 -20-3000 -2000-1000 0 1000 2000 3000 4000 NORMALIZED TRANSIENT THERMAL RESISTANCE Z h(j- c) GATE CHARGE Q G (nc) TIME (S) Publicaion Dae : Sepember 2017 11
PERFORMANCE CURVES INVERTER PART TURN-OFF SWITCHING SAFE OPERATIONG AREA (REVERSE BIAS SAFE OPERATING AREA) (MAXIMUM) SHORT-CIRCUIT SAFE OPERATING AREA (MAXIMUM) V CC 450 V, R G=1.0~10 Ω, V GE=±15 V, -----------------: T vj=25~150 C (Normal load operaions (Coninuous) V CC 400 V, R G=1.0~10 Ω, V GE=±15 V, - - - - - -: T vj=175 C (Unusual load operaions (Limied period) T vj= 25 ~ 150 C, W 8 μs, Non-Repeiive NORMALIZED COLLECTOR CURRENT IC NORMALIZED COLLECTOR CURRENT IC NTC hermisor par COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER VOLTAGE V CE (V) TEMPERATURE CHARACTERISTICS RESISTANCE R (kω) TEMPERATURE T ( C) Noe: The characerisics curves are presened for reference only and no guaraneed by producion es, unless oherwise noed. Publicaion Dae : Sepember 2017 12
Keep safey firs in your circui designs! This produc is designed for indusrial applicaion purpose. The performance, he qualiy and suppor level of he produc is guaraneed by Cusomer's Sd. Spec.. Misubishi Elecric Corporaion pus is reasonable effor ino making semiconducor producs beer and more reliable, bu here is always he possibiliy ha rouble may occur wih hem by he reliabiliy lifeime such as Power Cycle, Thermal Cycle or ohers, or o be used under special circumsances(e.g. high humidiy, dusy, saly, highlands, environmen wih los of organic maer / corrosive gas / explosive gas, or siuaion which erminal of semiconducor producs is received srong mechanical sress). In he cusomer's research and developmen, please evaluae i no only wih a single semiconducor produc bu also in he enire sysem, and judge wheher i's applicable. Furhermore, rouble wih semiconducors may lead o personal injury, fire or propery damage. Remember o give due consideraion o safey when making your circui designs, wih appropriae measures such as (i) placemen of subsiuive, auxiliary circuis (e.g. appropriae fuse or circui breaker beween a power supply and semiconducor producs), (ii) use of non-flammable maerial or (iii) prevenion agains any malfuncion or mishap. Noes regarding hese maerials These maerials are inended as a reference o assis our cusomers in he selecion of he Misubishi semiconducor produc bes suied o he cusomer's applicaion; hey do no convey any license under any inellecual propery righs, or any oher righs, belonging o Misubishi Elecric Corporaion or a hird pary. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, or infringemen of any hird-pary's righs, originaing in he use of any produc daa, diagrams, chars, or circui applicaion examples conained in hese maerials. All informaion conained in hese maerials, including produc daa, diagrams and chars represens informaion on producs a he ime of publicaion of hese maerials, and are subjec o change by Misubishi Elecric Corporaion wihou noice due o produc improvemens or oher reasons. I is herefore recommended ha cusomers conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for he laes produc informaion before purchasing a produc lised herein. The informaion described here may conain echnical inaccuracies or ypographical errors. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy, or oher loss rising from hese inaccuracies or errors. Please also pay aenion o informaion published by Misubishi Elecric Corporaion by various means, including he Misubishi Semiconducor home page (www.misubishielecric.com/semiconducors/). When using any or all of he informaion conained in hese maerials, including produc daa, diagrams, and chars, please be sure o evaluae all informaion as a oal sysem before making a final decision on he applicabiliy of he informaion and producs. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy or oher loss resuling from he informaion conained herein. Misubishi Elecric Corporaion semiconducors are no designed or manufacured for use in a device or sysem ha is used under circumsances in which human life is poenially a sake. Therefore, his produc should no be used in such applicaions. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor when considering he use of a produc conained herein for any specific purposes, such as apparaus or sysems for ransporaion, vehicular, medical, aerospace, nuclear, or undersea repeaer use. In he case of new requiremen is available, his maerial will be revised upon consulaion. The prior wrien approval of Misubishi Elecric Corporaion is necessary o reprin or reproduce in whole or in par hese maerials. If hese producs or echnologies are subjec o he Japanese expor conrol resricions, hey mus be expored under a license from he Japanese governmen and canno be impored ino a counry oher han he approved desinaion. Any diversion or re-expor conrary o he expor conrol laws and regulaions of Japan and/or he counry of desinaion is prohibied. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for furher deails on hese maerials or he producs conained herein. Generally he lised company name and he brand name are he rademarks or regisered rademarks of he respecive companies. 2017 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publicaion Dae : Sepember 2017 13