PD -91656C INSULATED GATE BIPOLAR TRANSISTOR IRG4PC40W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 khz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 khz) Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 V I C @ T C = 25 C Continuous Collector Current 40 I C @ T C = 0 C Continuous Collector Current 20 A I CM Pulsed Collector Current 160 I LM Clamped Inductive Load Current 160 V GE Gate-to-Emitter Voltage ± 20 V E ARV Reverse Voltage Avalanche Energy ƒ 160 mj P D @ T C = 25 C Maximum Power Dissipation 160 P D @ T C = 0 C Maximum Power Dissipation 65 W T J Operating Junction and -55 to + 150 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (0.063 in. (1.6mm) from case ) Mounting torque, 6-32 or M3 screw. lbf in (1.1N m) Thermal Resistance G C E n-channel TO-247AC V CES = 600V V CE(on) typ. = 2.05V @, 20A Parameter Typ. Max. Units R θjc Junction-to-Case 0.77 R θcs Case-to-Sink, Flat, Greased Surface 0.24 C/W R θja Junction-to-Ambient, typical socket mount 40 Wt Weight 6 (0.21) g (oz) www.irf.com 1 4/15/2000
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, 250µA V (BR)ECS Emitter-to-Collector Breakdown Voltage 18 V V GE = 0V, 1.0A V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage 0.44 V/ C V GE = 0V, 1.0mA 2.05 2.5 20A V CE(ON) Collector-to-Emitter Saturation Voltage 2.36 40A See Fig.2, 5 V 1.90 20A, T J = 150 C V GE(th) Gate Threshold Voltage 3.0 6.0 V CE = V GE, 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage 13 mv/ C V CE = V GE, 250µA g fe Forward Transconductance 18 28 S V CE = 0 V, 20A 250 V GE = 0V, V CE = 600V I CES Zero Gate Voltage Collector Current µa 2.0 V GE = 0V, V CE = V, T J = 25 C 2500 V GE = 0V, V CE = 600V, T J = 150 C I GES Gate-to-Emitter Leakage Current ±0 na V GE = ±20V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 98 147 20A Q ge Gate - Emitter Charge (turn-on) 12 18 nc V CC = 400V See Fig.8 Q gc Gate - Collector Charge (turn-on) 36 54 t d(on) Turn-On Delay Time 27 t r Rise Time 22 T J = 25 C ns t d(off) Turn-Off Delay Time 0 150 20A, V CC = 480V t f Fall Time 74 1, R G = Ω E on Turn-On Switching Loss 0.11 Energy losses include "tail" E off Turn-Off Switching Loss 0.23 mj See Fig. 9,, 14 E ts Total Switching Loss 0.34 0.45 t d(on) Turn-On Delay Time 25 T J = 150 C, t r Rise Time 23 20A, V CC = 480V ns t d(off) Turn-Off Delay Time 170, R G = Ω t f Fall Time 124 Energy losses include "tail" E ts Total Switching Loss 0.85 mj See Fig.,11, 14 L E Internal Emitter Inductance 13 nh Measured 5mm from package C ies Input Capacitance 1900 V GE = 0V C oes Output Capacitance 140 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 35 ƒ = 1.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) V CC = 80%(V CES ), V GE = 20V, L = µh, R G = Ω, (See fig. 13a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot. 2 www.irf.com
50 Load Current ( A ) 40 30 20 Square wave: 60% of rated vo lta g e For both: Duty cycle: 50% T J = 125 C T sink = 90 C Gate drive as specified Power Dissipation = 28W Triangular wave: Clamp voltage: 80% of rated Ideal diodes 0 A 0.1 1 0 00 f, Frequency (khz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 00 00 I C, Collector-to-Emitter Current (A) 0 T = 25 J C T J = 150 C 80µs PULSE WIDTH 1 1.0 2.0 3.0 4.0 5.0 V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) 0 T J = 150 C T J = 25 C V CC = 50V 5µs PULSE WIDTH 1 5 7 9 11 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current(A) 50 40 30 20 V CE, Collector-to-Emitter Voltage(V) 3.0 2.5 2.0 1.5 80 us PULSE WIDTH 40A 20A A 0 25 50 75 0 125 150 T C, Case Temperature ( C) 1.0-60 -40-20 0 20 40 60 80 0 120 140 160 T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thjc ) 0.1 D = 0.50 0.20 0. 0.05 PDM t1 0.02 t2 SINGLE PULSE 0.01 (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t2 2. Peak T J = PDM x Z thjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 4000 3000 2000 00 VGE = 0V, f = 1MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) 20 16 12 8 4 V CC = 400V 20A 0 1 0 V CE, Collector-to-Emitter Voltage (V) 0 0 20 40 60 80 0 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 V CC = 480V T = 25 J C 20A Total Switching Losses (mj) 1 R G = Ohm Ω V CC = 480V 40A 20A A 0.3 20 30 40 50 60 R G, Gate Resistance (Ohm) (Ω) 0.1-60 -40-20 0 20 40 60 80 0 120 140 160 T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Fig. - Typical Switching Losses vs. www.irf.com Resistance Junction Temperature 5
Total Switching Losses (mj) 2.0 R G = Ω Ohm T J = 150 C V CC = 480V 1.5 1.0 0.5 0.0 5 15 25 35 45 I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) 00 0 V GE = 20V o T J = 125 C SAFE OPERATING AREA 1 0 00 V CE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com
50V 00V L V * C D.U.T. 0-480V 480µF 960V R L = 480V 4 X I C @25 C * Driver same ty pe as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor w ill increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit I C 50V 00V L Driver* D.U.T. V C ƒ Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V 90% ƒ % V C 90% t d(off) Fig. 14b - Switching Loss Waveforms I C 5% % t d(on) t r E on E ts = (E on +E off ) www.irf.com 7 t f E off t=5µs
Case Outline and Dimensions TO-247AC * 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 15.90 (.626) 15.30 (.602) - B - 1 2 3 1.40 (.056) 3X 1.00 (.039) 0.25 (.0) M C A S 3.40 (.133) 3.00 (.118) 3.65 (.143) 3.55 (.140) 0.25 (.0) M D - A - 5.50 (.217) 2X - C - 4.30 (.170) 3.70 (.145) 5.50 (.217) 4.50 (.177) B M - D - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 0.80 (.031) 3X 0.40 (.016) 2.60 (.2) 2.20 (.087) NOTES: 1 DIMENSIONS & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 DIM ENSIONS ARE SHO W N M ILLIM ETER S (INCHES). 4 CO NFO RM S TO JEDEC O UTLINE TO-247AC. LEAD ASSIGNMENTS 1 - GATE 2 - COLLECTO R 3 - EM ITTER 4 - COLLECTO R * LONGER LEADED (20mm) VERSION AVAILABLE (TO-247AD) TO ORDER ADD "-E" SUFFIX TO PART NUMBER CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) Dimensions in Millimeters and (Inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 8 www.irf.com
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