H-Bridge Driver IC Feaures Compaible o very low ohmic normal level inpu N-Channel MOSFETs PWM DIR - Inerface PWM frequency up o 50kHz Operaes down o 7.5 V supply volage Low EMC sensiiviy and emission Adjusable dead ime wih shoo hrough proecion Deacivaion of dead ime and shoo hrough proecion possible Shor circui proecion for each Mosfe can be disabled and adjused Driver undervolage shu down Reverse polariy proecion for he driver IC Fas disable funcion / Inhibi for low quiescen curren Inpu wih TTL characerisics 2 bi diagnosis Thermal overload warning for driver IC Shoo hrough proecion Inegraed boosrap diodes Applicaion Dedicaed for DC-brush high curren moor bridges in PWM conrol mode for 12, 24 and 42V powerne applicaions. The inpu srucure allows an easy conrol of a DC-brush moor General Descripion Produc Summary Turn on curren IGxx(on) 850 ma Turn off curren IGxx(off) 580 ma Supply volage range VVs 7.5 60 V Gae Volage VGS 10 V Temperaure range TJ -40...150 C H-bridge driver IC for MOSFET power sages wih muliple proecion funcions. P-DSO-20 The TLE6184G is very similar o he TLE6281G. The major difference is ha he Shor Circui proecion level of he TLE6284G can be adjused by exernal resisors or even disabled. The pin ous are differen as well. Block Diagram V S Linear Regulaor Charge Pump BH1 BH2 GND INH PWM DIR DT/DIS ER1 ER2 INH Inpu conrol Dead ime Undervolage HS1 LS1 HS2 LS2 Shor circui Deec. Overemp. warning Undervolage HSx OR Undervolage LSx Shor Circui Deecion T j > 170 o C yp. Level Shif Floaing HS Driver 1 V GS limiaion HS1 Shor circui SCD deec. Undervolage Floaing HS Driver 2 V GS limiaion HS2 Shor circui SCD deec. Undervolage Floaing LS Driver 1 V GS limiaion LS1 Shor circui SCD deec. Undervolage Floaing LS Driver 2 V GS limiaion LS2 Shor circui SCD deec. Undervolage DH1 GH1 SH1 DH2 GH2 SH2 DL1 GL1 DL2 GL2 Daa Shee 1 Rev 2.3 2007-01-11
Applicaion Block Diagram Wachdog Rese Q TLE 4278G I V s = 12V C Q 47µF C D 47nF D R 10Ω C s 47µF C s 1µF R Q 47kΩ R Q 47kΩ WD R V cc Vs BH1 C B 220nF R SCDH1 ER1 DH1 68kΩ BCR192W ER2 INH GH1 SH1 BH2 R SCDH2 C B 220nF R SCDH3 DH2 µc R DT 10kΩ DT / DIS R INH 220kΩ TLE6284G GH2 SH2 R SCDH4 M PWM DL1 R SCDL1 GL1 DIR DL2 R SCDL3 GL2 R SCDL2 R SCDL4 GND This applicaion block diagram shows one of he possibiliies o use his Driver IC. The volage divider neworks accross he 4 MOSFETs (resisors R SCDxx ) allow o increase he curren limi hreshold for Shor Circui proecion. The R SCDLx resisors also provide a charge pah for he boosrap capaciors. If R SCDLx resisors are no used in he applicaion, a 12k Ohm resisor should be inroduced beween SH1 o GND and SH2 o GND. Daa Shee 2 Rev 2.3 2007-01-11
DT/DIS 1 20 GL2 ER1 2 19 SH2 DIR 3 18 GH2 PWM 4 17 BH2 DL2 ER2 5 6 TLE6284G 16 15 DH2 DH1 GND 7 14 BH1 VS 8 13 GH1 DL1 9 12 SH1 INH 10 10 11 GL1 Pin Symbol Funcion 1 DT / DIS a) Se adjusable dead ime by exernal resisor b) Rese ERx regiser c) Disable oupu sages 2 ER1 Error flag for driver shu down 3 DIR Conrol inpu for spinning direcion of he moor 4 PWM Conrol inpu for PWM frequency and duy cycle 5 DL2 Sense conac for shor circui deecion low side 2 6 ER2 Warning flag Temperaure / disinguish if shor circui or undervolage lock ou occured 7 GND Logic Ground 8 VS Volage supply 9 DL1 Sense conac for shor circui deecion low side 1 10 INH Ses complee device o sleep mode o achieve low quiescen currens 11 GL1 Oupu o gae low side swich 1 12 SH1 Connecion o source high side swich 1 13 GH1 Oupu o gae high side swich 1 14 BH1 Boosrap supply high side swich 1 15 DH1 Sense conac for shor circui deecion high side 1 16 DH2 Sense conac for shor circui deecion high side 2 17 BH2 Boosrap supply high side swich 2 18 GH2 Oupu o gae high side swich 2 19 SH2 Connecion o source high side swich 2 20 GL2 Oupu o gae low side swich 2 Daa Shee 3 Rev 2.3 2007-01-11
Maximum Raings a T j =-40 150 C unless specified oherwise Parameer Symbol Limis Values Uni min max Supply volage 1 V S -4 60 V Operaing emperaure range T j -40 150 C Sorage emperaure range T sg -55 150 Max. volage range a PWM, DIR, DT/DIS -1 6 V Max. volage range a ERx -0.3 6 V Max. volage range a INH VINH -0.6 60 V Max. volage range a BHx VBHx -0.3 90 V Max. volage range a DHx 2 VDHx -4 75 V Max. volage range a GHx 3 VGHx -7 86 V Max. volage range a SHx 3 VSHx -7 75 V Max. volage range a GLx VGLx -2 12 V Max. volage range a DLx VDLx -7 75 V Max. volage difference BHx SHx VBHx-VSHx -0.3 17 V Max. volage difference Gxx Sxx VGxx-VSxx -0.3 11 V Power dissipaion (DC) @ TA=125 C / min.fooprin P o 0.33 W Power dissipaion (DC) @ TA=85 C / min.fooprin P o 0.85 W Elecrosaic discharge volage (Human Body Model) 4 V ESD 2 kv according o MIL STD 883D, mehod 3015.7 and EOS/ESD assn. sandard S5.1 1993 Thermal resisance juncion - ambien (minimal fooprin R hja 75 K/W wih hermal vias) Thermal resisance juncion - ambien (6 cm 2 ) R hja 75 K/W Funcional range Parameer and Condiions Symbol Values Uni a Tj = 40 150 C, unless oherwise specified min max Supply volage V S 7.5 60 V Operaing emperaure range T j -40 150 C Max. volage range a PWM, DIR, DT/DIS -0.3 5.5 V Max. volage range a ERx -0.3 5.5 V Max. volage range a INH VINH -0.6 60 V Max. volage range a BHx VBHx -0.3 90 V Max. volage range a DHx 2 VDHx -4 75 V Max. volage range a GHx 3 VGHx -7 86 V Max. volage range a SHx 3 VSHx -7 75 V 1 Wih exernal resisor ( 10 Ω ) and capacior 2 The min value -4V is reduced o ( V BHx - V SHx ) in case of boosrap volages V BHx -V SHx <4V 3 The min value -7V is reduced o (V BHx - V SHx - 1V) in case of boosrap volages V BHx -V SHx <8V 4 All es involving Gxx pins V ESD =1 kv! Daa Shee 4 Rev 2.3 2007-01-11
Max. volage range a DLx 3 VDLx -7 75 V Max. volage range a GLx VGLx -2 12 V Max. volage difference BHx - SHx VBHx-VSHx -0.3 12 V Max. volage difference GHx SHx VGxx-VSxx -0.3 11 V PWM frequency FPWM 0 50 khz Minimum on ime exernal lowside swich saic condiion @ 20 khz; Q Gae = 200nC p(min) 2 µs Elecrical Characerisics Parameer and Condiions Symbol Values Uni min yp max a Tj = -40 150 C, unless oherwise specified and supply volage range VS = 7.5 60V; f PWM = 20kHz Saic Characerisics Low level oupu volage (VGSxx) @ I=10mA VLL 60 150 mv High level oupu volage (VGSxx) @ I=-10mA; VHL 8 10 11 V Vs 11.5V High level oupu volage (VGSxx) @ I=-10mA; VHL Vs-1.5 V Vs<11.5V Supply curren a VS (device disabled) IVS(dis)42V 4 8 ma @ V ba = V S =42V R DT =400kΩ Quiescen curren a VS (device inhibied) IVS(inh)14V 0.6 1.5 ma @ V ba = V S =14V R DT =400kΩ R SCDL1 R SCDL2 = R SCDL3 R SCDL4 =12kΩ Quiescen curren a VS (device inhibied) IVS(inh)42V 0.6 1.5 ma @ V ba = V S =42V R DT =400kΩ R SCDL1 R SCDL2 = R SCDL3 R SCDL4 =12kΩ Supply curren a VS @ V ba = V S =14V, f PWM = 20kHz (Oupus open) IVS(open)14V 7 15 ma Supply curren a VS @ V ba = V S =14V, f PWM = 50kHz (Oupus open) IVS(open)14V 7 15 ma Supply curren a VS @ V ba = V S =42V, f PWM = 20kHz (Oupus open) IVS(open)42V 7 15 ma Low level inpu volage VIN(LL) 1.0 V High level inpu volage VIN(HL) 2.0 V Inpu hyseresis VIN 100 170 mv Inhibi rip level V INH 1.3 2 3 V Daa Shee 5 Rev 2.3 2007-01-11
Dynamic characerisics (pls. see es circui and iming diagram) Turn on curren @ VGxx VSxx = 0V; T j =25 C @ VGxx VSxx = 4V; T j =125 C @ C Load =22nF ; R load = 0Ω Turn off curren @ VGxx VSxx = 10V; T j =25 C @ VGxx VSxx = 4V; T j =125 C @ C Load = 22nF ; R load =0Ω Dead ime (adjusable) @ RDT = 1 kω @ RDT = 10 kω @ RDT = 50 kω @ RDT = 200 kω @ C Load =10nF ; R load =1Ω Rise ime @ C Load =10nF ; R load =1Ω (20% o 80%) Fall ime @ C Load =10nF ; R load =1Ω (80% o 20%) Disable propagaion ime @ C Load =10nF ; R load =1Ω Rese ime of diagnosis @ C Load =10nF ; R load =1Ω Inpu propagaion ime (low side urns on, 0% o 10%) Inpu propagaion ime (low side urns off, 100% o 90%) Inpu propagaion ime (high side urns on, 0% o 10%) Inpu propagaion ime (high side urns off, 100% o 90%) Inpu propagaion ime difference (all channels urn on) Inpu propagaion ime difference (all channels urn off) Inpu propagaion ime difference (one channel; low on high off) Inpu propagaion ime difference (one channel; high on low off) Inpu propagaion ime difference (all channels; low on high off) Inpu propagaion ime difference (all channels; high on low off) IGxx(on) IGxx(off) DT 0.05 0.40 Daa Shee TLE6284G 850 700 580 300 0.01 0.20 1.0 3.1 0.38 2.50 ma ma µs rise 100 300 ns fall 150 440 ns P(DIS) 3.6 5 7 µs P(CL) 1 2 3.1 µs P(ILN) 250 500 ns P(ILF) 110 500 ns P(IHN) 200 500 ns P(IHF) 130 500 ns P(Diff) 20 50 70 ns P(Diff) 25 50 ns P(Diff) 120 180 ns P(Diff) 100 180 ns P(Diff) 120 180 ns P(Diff) 100 180 ns Daa Shee 6 Rev 2.3 2007-01-11
Tes Circui and Timing Diagram PWM x2 GHx PWM R load = 1 Ohm 50% C load = 10 nf V GHX_C SHx P(IHN) rise P(IHF) fall GLx R load = 1 Ohm C load = 10 nf V GLX_C V GHX_C 80% 90% SLx 20% 10% P(ILF) fall P(ILN) rise Tes Condiions : Juncion emperaure T j = -40 150 o C V GLX_C 90% 80% Supply volage range Vs = 7.5 60V PWM frequency f PWM = 20 khz 20% 10% Diagnosis and Proecion Funcions Parameer and Condiions Symbol Values Uni min yp max a Tj = -40 150 C, unless oherwise specified and supply volage range VS = 7.5 60V; f PWM = 20kHz Overemperaure warning T J(OV) 150 170 190 C Hyseresis for overemperaure warning T J(OV) 20 C Shor circui proecion filer ime SCP(off) 6 9 12 µs Shor circui crieria (VDS of Mosfes) For Low sides For High sides V DS(SCP) 0.5 0.45 0.75 0.75 1.0 1.05 Disable inpu level V DIS 3.3 3.7 4.0 V Disable inpu hyseresis V DIS 180 mv Error level @ 1.6mA I ERx V ERx 1.0 V Under volage lock ou for highside oupu boosrap V BHx (uvlo) 3.7 4.6 V volage Under volage lock ou for lowside oupu supply volage V Vs (uvlo) 4.8 5.9 V V Daa Shee 7 Rev 2.3 2007-01-11
Remarks: Defaul saus of inpu pins: To assure a defined saus of he logic inpu pins in case of disconnecion, hese pins are inernally secured by pull up / pull down curren sources wih approx. 20µA. The high volage proof inpu INH should be secured by an exernal pull down resisor close o he device. The following able shows he defaul saus of he logic inpu pins. Inpu pin PWM and DIR DT/DIS (acive high) Defaul saus Low (= break in high side) High Definiion: In his daashee a duy cycle of 98% means ha he GLx pin is 2% of he PWM period in high condiion. Remark: Please consider he influence of he dead ime and he propagaion ime differences for he inpu duy cycle Funcional descripion Descripion of Dead Time Pin / Disable Pin / Rese This pin allows o adjus he inernal generaed dead ime. The dead ime proecs he exernal highside and lowside Mosfes in he same halfbridge agains a lowohmic connecion beween baery and GND and he resuling cross curren hrough hese Mosfes. The adjusable dead ime allows o minimize he power dissipaion caused by he curren flowing hrough he body diode during swiching he halfbridge. In addiion his pin allows o rese he diagnosis regisers wihou shu down of any oupu sage as well as he possibiliy o shu down all oupus simulaneously. Condiion of DT/DIS pin Funcion 0-3.5V Adjus dead ime beween 10ns and 3.1µs > 4V a) Rese of diagnosis regiser if DT/DIS volage is higher han 4V for a ime beween 3.1µs and 3.6µs b) Shu down of oupu sages if DT/DIS volage is higher han 4V for a ime above 7µs (Acive pull down of gae volage) Descripion of Inhibi funcionaliy In auomoive applicaions which are permanenly conneced o he baery line, i is very imporan o reduce he curren consumpion of he single devices. Therefore he TLE6284G offers an inhibi mode o pu he device o sleep and assure very low quiescen currens. To deacivae he inhibi mode he INH pin has o be se o high. This can be done by connecing his pin o volages beween 3.3 and 60V wihou exernal proecion. An inhibi mode means a complee reiniialisaion of he device. Descripion of Diagnosis The wo ERx pins are open collecor oupus and have o be pulled up wih exernal pull up resisors o 5V. In normal condiions boh ERx signals are high. In case of shudown of any Daa Shee 8 Rev 2.3 2007-01-11
oupu sage he ER1 is pulled down. This shu down can be caused by undervolage or shor circui. In his condiion ER2 indicaes he reason for he shu down. Condiion of Condiion of Funcion ER1 pin ER2 pin 5V 5V no errors 5V 0V overemperaure warning of driver IC 0V 5V Shu down of any oupu sage caused by shor circui 0V 0V Shu down of any oupu sage caused by undervolage Recommended Sar-up procedure The following procedure is recommended whenever he Driver IC is powered up: Disable he Driver IC via DT/DIS pin Wai unil he boosrap capaciors of High Side MOSFET C Bx are charged (he waiing ime depends on applicaion condiions, e.g. C Bx and RBx) Enable he Driver IC via DT/DIS pin Sar he operaion by applying he desired pulse paerns. Do no apply any pulse paerns o he PWM or DIR pin, before he C Bx capaciors are charged up. Shor Circui proecion The curren hreshold limi o acivae he Shor Circui proecion funcion can be adjused o larger values, i can no be adjused o lower values. This can be done by exernal resisors o form volage dividers across he sense elemen (pls. see Applicaion block diagram on pg. 2), consising of he Drain-Source-Terminals, a fracion of he PCB race and in some cases curren sense resisors (used by he µc no by he Driver IC). The Shor Circui proecion can be disabled for he High Side MOSFETs by shoring DH1 wih SH1 and DH2 wih SH2 on he PCB; in his case he DHx pins may no be conneced o he Drains of he associaed MOSFETs. To disable Shor Circui proecion for he Low Side MOSFETs he DL1 and DL2 pin should be conneced o he Driver IC s Ground. Shu down of he driver A shu down can be caused by undervolage or shor circui. A shor circui will shu down only he affeced Mosfe unil a rese of he error regiser by a disable of he driver occurs. A shu down due o shor circui will occur only when he Shor Circui crieria V DS(SCP) is me for a duraion equal o or longer han he Shor Circui filer ime SCP(off). Ye, he exposure o or above V DS(SCP) is no couned or accumulaed. Hence, repeiive Shor Circui condiions shorer han scp(off) will no resul in a shu down of he affeced MOSFET. An undervolage shu down shus only he affeced oupu down. The affeced oupu will auo resar afer he undervolage siuaion is over. Operaion a Vs<12V If Vs<11.5V he gae volage will no reach 10V. I will reach approx Vs-1.5V, dependen on duy cyle, boosrap capacior, oal gae charge of he exernal Mosfe and swiching frequency. Daa Shee 9 Rev 2.3 2007-01-11
Operaion a differen volages for Vs, DH1 and DH2 If DH1 and DH2 are used wih a volage higher han Vs, a duy cycle of 100% can no be guaraneed. In his case he driver is acing like a normal driver IC based on he boosrap principle. This means ha afer a maximum On ime of he highside swich of more han 1ms a refresh pulse o charge he boosrap capacior of abou 1µs is needed o avoid undervolage lock ou of his oupu sage. Operaion a exreme duy cycle: The inegraed charge pump allows an operaion a 100% duy cycle. The charge pump is srong enough o replace leakage currens during on -phase of he highside swich. The gae charge for fas swiching of he highside swiches is supplied by he boosrap capaciors. This means, ha he boosrap capacior needs a minimum charging ime of abou 1µs, if he highside swich is operaed in PWM mode (e.g. wih 20kHz a maximum duy cycle of 96% can be reached). The exac value for he upper limi is given by he RC ime formed by he impedance of he inernal boosrap diode and he capacior formed by he exernal Mosfe (C Mosfe =Q Gae / V GS ). The size of he boosrap capacior has o be adaped o he exernal MOSFET he driver IC has o drive. Usually he boosrap capacior is abou 10-20 imes bigger han C Mosfe. Exernal componens a he Vs Pin have o be considered, oo. The charge pump is acive when he highside swich is ON and he volage level a he SHx is higher han 4V. Only under hese condiions he boosrap capacior is charged by he charge pump. Daa Shee 10 Rev 2.3 2007-01-11
Esimaion of power loss wihin he Driver IC The power loss wihin he Driver IC is srongly dependen on he use of he driver and he exernal componens. Neverheless a rough esimaion of he wors case power loss is possible. Wors case calculaion is: P Loss = (Q gae *n*cons* f PWM I VS(open) )* V Vs - P RGae Wih: P Loss = Power loss wihin he Driver IC f PWM = Swiching freqency Q gae = Toal gae charge of used MOSFETs a 10V V GS n = Number of swiched MOSFETs cons = Consan considering some leakage curren in he driver (abou 1.2) I VS(open) = Curren consumpion of driver wihou conneced Mosfes during swiching V VS = Volage a Vs P RGae = Power dissipaion in he exernal gae resisors This value can be reduced dramaically by usage of exernal gae resisors. Esimaed Power Loss P LOSS wihin he Driver IC Esimaed Power Loss P LOSS wihin he Driver IC PLOSS (W) 0,8 0,7 0,6 0,5 0,4 0,3 0,2 0,1 0 for differen supply volages V s a Q G = 100nC @ V GS = 10V Vs = 8V Vs = 14V Vs = 18V 0 10 20 30 40 50 60 PWM Frequency (khz) PLOSS (W) 0,8 0,7 0,6 0,5 0,4 0,3 0,2 0,1 0 for differen gae charges Q G a supply volage V s = 14V Q G = 50nC Q G = 100nC Q G = 200nC 0 10 20 30 40 50 60 PWM Frequency (khz) Condiions : Juncion emperaure T j = 25 o C Number of swiched MOSFET n = 2 Power dissipaion in he exernal gae resisors P RGae = 0,2*P Loss Daa Shee 11 Rev 2.3 2007-01-11
Gae Drive characerisics V PWM_HS BHx V PWM_HS Logic Level Shif V GS limi Under volage SCD i Gxx(on) i Gxx(off) DHx GHx V s C B i GHx i Gxx(on) igxx(off) 850 ma Peak 580 ma Peak SHx Moor TLE6284G High Side Driver i GHx Tes Condiions : - Turn On : V GS = 0V, T j = 25 o C - Turn Off : V GS = 10V, T j = 25 o C This figure represens he simplified inernal circui of one high side gae drive. The drive circui of he low sides look similar. This figure illusraes ypical volage and curren waveforms of he high side gae drive; he associaed waveforms of he low side drives look similar. Daa Shee 12 Rev 2.3 2007-01-11
Truh Table Inpu Condiions Oupu driver IC Oupu Bridge DIR PWM DT / DIS UV OT SC GH 1 GL 1 GH 2 GL 2 ER 1 ER 2 Ou1 Ou2 0 1 <3.5V 0 0 0 1 0 0 1 5V 5V 1 0 0 0 <3.5V 0 0 0 1 0 1 0 5V 5V 1 1 1 1 <3.5V 0 0 0 0 1 1 0 5V 5V 0 1 1 0 <3.5V 0 0 0 1 0 1 0 5V 5V 1 1 0 1 <3.5V 1 0 0 B 0 0 B C D 1 A 0 A 0 0 <3.5V 1 0 0 B 0 B 0 C D 1 A 1 A 1 1 <3.5V 1 0 0 0 B B 0 C D 0 A 1 A 1 0 <3.5V 1 0 0 B 0 B 0 C D 1 A 1 A 0 1 <3.5V 0 1 0 1 0 0 1 5V 0V 1 0 0 0 <3.5V 0 1 0 1 0 1 0 5V 0V 1 1 1 1 <3.5V 0 1 0 0 1 1 0 5V 0V 0 1 1 0 <3.5V 0 1 0 1 0 1 0 5V 0V 1 1 0 1 <3.5V 0 0 1 E 0 0 E F 5V 1 A 0 A 0 0 <3.5V 0 0 1 E 0 E 0 F 5V 1 A 1 A 1 1 <3.5V 0 0 1 0 E E 0 F 5V 0 A 1 A 1 0 <3.5V 0 0 1 E 0 E 0 F 5V 1 A 1 A X X X X X X 0 0 0 0 5V 5V T T X X >4V X X X 0 0 0 0 5V 5V T T A) Trisae when affeced by undervolage shu down or shor circui B) 0 when affeced; 1 when no affeced; self recovery C) 0V when oupu does no correspond o inpu paerns; 5V when oupu corresponds o inpu paerns D) Is an oupu affeced by undervolage ER2 is 0V E) 0 when affeced he oupus of he affeced halfbridge are shu down and say lached unil rese; 1 when no affeced F) 0V when oupu does no correspond o inpu paerns he oupus of he affeced halfbridge are shu down and say lached unil rese; 5V when oupu corresponds o inpu paerns. T) Trisae X) Condiion has no influence Remark: To generae fas decay conrol mode, se PWM o 1 and send pwm-paern o DIR inpu. Daa Shee 13 Rev 2.3 2007-01-11
PWM DIR V GH1 V GH2 V GL1 V GL2 I moor Acceleraion Moor urns righ Moor sops Moor urns lef Moor sops Vs Vs Vs Vs Vs Vs M M M M M M Daa Shee 14 Rev 2.3 2007-01-11
Package and Ordering Code (all dimensions in mm) 5 Package Code P-DSO 20 5 For deailed informaion abou packages please conac hp://www.infineon.com/cgi/ecrm.dll/ecrm/scrips/pack_ca.jsp?oid=-8781 Daa Shee 15 Rev 2.3 2007-01-11
Published by Infineon Technologies AG, Bereich Kommunikaion S.-Marin-Srasse 53, D-81541 München Infineon Technologies AG 1999 All Righs Reserved. Aenion please! The informaion herein is given o describe cerain componens and shall no be considered as warraned characerisics. Terms of delivery and righs o echnical change reserved. We hereby disclaim any and all warranies, including bu no limied o warranies of non-infringemen, regarding circuis, descripions and chars saed herein. Infineon Technologies is an approved CECC manufacurer. Informaion For furher informaion on echnology, delivery erms and condiions and prices please conac your neares Infineon Technologies Office in Germany or our Infineon Technologies Represenaives worldwide (see address lis). Warnings Due o echnical requiremens componens may conain dangerous subsances. For informaion on he ypes in quesion please conac your neares Infineon Technologies Office. Infineon Technologies Componens may only be used in life-suppor devices or sysems wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha life-suppor device or sysem, or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body, or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. Daa Shee 16 Rev 2.3 2007-01-11