3V NPN HIGH VOLTAGE TRANSISTOR IN Features BV EO > 3V I = 5mA High ollector urrent 2W Power Dissipation Low Saturation Voltage V E(sat) < 5mV @ 2mA omplementary PNP Type: DZTA92 Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AE-Q11 Standards for High Reliability An Automotive-ompliant Part is Available Under Separate Datasheet (Q) Mechanical Data ase: ase Material: Molded Plastic. Green Molding ompound. UL Flammability Rating 94V- Moisture Sensitivity: Level 1 per J-STD-2 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-22, Method 28 Weight:.112 grams (Approximate) Applications Switch-Mode Power Supplies (SMPS) Video Output Stages Motor Driver B Top View E Device Symbol Top View Pin-Out Ordering Information (Note 4) Part Number ompliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel -13 AE-Q11 K3M 13 12 2,5 Notes: 1. No purposely added lead. Fully EU Directive 22/95/E (RoHS), 211/65/EU (RoHS 2) & 215/863/EU (RoHS 3) compliant. 2. See https:///quality/lead-free/ for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<15ppm total Br + l) and <1ppm antimony compounds. 4. For packaging details, go to our website at https:///design/support/packaging/diodes-packaging/. Marking Information K3M = Product Type Marking ode YWW = Date ode Marking Y = Last Digit of Year (ex: 8 = 218) WW = Week ode (1 to 52) Datasheet Number: DS3582 Rev. 8-2 1 of 7 May 218
Absolute Maximum Ratings (@T A = +25, unless otherwise specified.) haracteristic Symbol Value Unit ollector-base Voltage V BO 3 V ollector-emitter Voltage V EO 3 V Emitter-Base Voltage V EBO 6 V ollector urrent I 5 ma Base urrent I B 1 ma Thermal haracteristics (@T A = +25, unless otherwise specified.) Power Dissipation Thermal Resistance, Junction to Ambient haracteristic Symbol Value Unit (Note 5) P D (Note 6) 1 (Note 5) R θja (Note 6) 125 Thermal Resistance, Junction to Leads (Note 7) R θjl 19.4 /W Operating and Storage Temperature Range T J, T STG -65 to +15 2 62 W /W ESD Ratings (Note 8) haracteristic Symbol Value Unit JEDE lass Electrostatic Discharge - Human Body Model ESD HBM 4, V 3A Electrostatic Discharge - Machine Model ESD MM 4 V Notes: 5. For a device mounted with the collector lead on 5mm x 5mm 1oz copper that is on a single-sided 1.6mm FR-4 PB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except mounted on minimum recommended pad (MRP) layout. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDE specification JESD22-A114 and JESD22-A115. Datasheet Number: DS3582 Rev. 8-2 2 of 7 May 218
Max Power Dissipation (W) Thermal Resistance ( o /W) Maximum Power (W) Thermal haracteristics and Derating Information 6 5mm x 5mm 1oz u 5 T A = 25 o 4 D=.5 3 2 D=.2 Single Pulse 1 D=.5 D=.1 1μ 1m 1m 1m 1 1 1 1k Pulse Width (s) Transient Thermal Impedance 16 14 12 1 8 6 4 2 5mm x 5mm 1oz u T A = 25 o Single pulse 1μ 1m 1m 1m 1 1 1 1k Pulse Width (s) Pulse Power Dissipation 2. 5mm x 5mm 1oz u 1.5 1..5. 2 4 6 8 1 12 14 16 Temperature ( o ) Derating urve Datasheet Number: DS3582 Rev. 8-2 3 of 7 May 218
I, OLLETOR URRENT (A) Electrical haracteristics (@T A = +25, unless otherwise specified.) OFF HARATERISTIS haracteristic Symbol Min Typ Max Unit Test ondition ollector-base Breakdown Voltage BV BO 3 V I = 1µA ollector-emitter Breakdown Voltage (Note 9) BV EO 3 V I = 1mA Emitter-Base Breakdown Voltage BV EBO 6 V I E = 1µA ollector-base ut-off urrent I BO.1 µa V B = 2V Emitter-Base ut-off urrent I EBO.1 µa V EB = 6V, I = ON HARATERISTIS (Note 9) ollector-emitter Saturation Voltage V E(SAT).5 V I = 2mA, I B = 2mA Base-Emitter Saturation Voltage V BE(SAT).9 V I = 2mA, I B = 2mA 25 I = 1mA, V E = 1V Static Forward urrent Transfer Ratio h FE 4 I = 1mA, V E = 1V SMALL SIGNAL HARATERISTIS 4 I = 3mA, V E = 1V Transition Frequency f T 5 MHz I = 1mA, V E = 2V f = 1MHz Output apacitance obo 3 pf V B = 2V, f = 1MHz Note: 9. Measured under pulsed conditions. Pulse width 3µs. Duty cycle 2%. Typical Electrical haracteristics (@T A = +25, unless otherwise specified.).2 I = 1mA B.15 I = 8mA B I = 6mA B I = 4mA B.1 I = 2mA B.5 I = 1mA B 1 2 3 4 5 V E, OLLETOR-EMITTER VOLTAGE (V) Figure 1 Typical ollector urrent vs. ollector-emitter Voltage Datasheet Number: DS3582 Rev. 8-2 4 of 7 May 218
f T, GAIN-BANDWIDTH PRODUT (MHz) V BE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) APAITANE (pf) V E(SAT), OLLETOR-EMITTER SATURATION VOLTAGE (V) V BE(ON), BASE-EMITTER TURN-ON VOLTAGE (V).5 1.4 I /I = 1 B.8.3.6.2 T A = 15 T A = 85.4.1 T A = -55 T A = 25.2.1.1 1 1 1 1, I, OLLETOR URRENT (ma) Figure 3 Typical ollector-emitter Saturation Voltage vs. ollector urrent.1.1.1 1 1 1 1, I, OLLETOR URRENT (ma) Figure 4 Typical Base-Emitter Turn-On Voltage vs. ollector urrent 1.2 I /I = 1 B 12 f = 1MHz 1 1.8 8.6 T A = -55 6 ibo.4 T A = 25 4 T A = 85.2 2 2.1.1 1 1 1 1, I, OLLETOR URRENT (ma) Figure 5 Typical Base-Emitter Saturation Voltage vs. ollector urrent obo.1.1 1 1 1 V R, REVERSE VOLTAGE (V) Figure 6 Typical apacitance haracteristics 16 12 8 4 V E = 2V f = 1MHz 2 4 6 8 1 I, OLLETOR URRENT (ma) Figure 7 Typical Gain-Bandwidth Product vs. ollector urrent Datasheet Number: DS3582 Rev. 8-2 5 of 7 May 218
Package Outline Dimensions Please see http:///package-outlines.html for the latest version. D b1 Q A A1 e1 e b 7 Gauge Plane Seating Plane.25 E L -1 E1 Dim Min Max Typ A 1.55 1.65 1.6 A1.1.15.5 b.6.8.7 b1 2.9 3.1 3..2.3.25 D 6.45 6.55 6.5 E 3.45 3.55 3.5 E1 6.9 7.1 7. e - - 4.6 e1 - - 2.3 L.85 1.5.95 Q.84.94.89 All Dimensions in mm 7 Suggested Pad Layout Please see http:///package-outlines.html for the latest version. X1 Y1 1 Y2 Dimensions Value (in mm) 2.3 1 6.4 X 1.2 X1 3.3 Y 1.6 Y1 1.6 Y2 8. Y X Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PB tracking. Datasheet Number: DS3582 Rev. 8-2 6 of 7 May 218
IMPORTANT NOTIE DIODES INORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOUMENT, INLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERHANTABILITY AND FITNESS FOR A PARTIULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDITION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should ustomers purchase or use Diodes Incorporated products for any unintended or unauthorized application, ustomers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, ustomers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. opyright 218, Diodes Incorporated Datasheet Number: DS3582 Rev. 8-2 7 of 7 May 218